ATE411616T1 - Bipolartransistor, halbleiterbauelement und diesbezügliches herstellungsverfahren - Google Patents

Bipolartransistor, halbleiterbauelement und diesbezügliches herstellungsverfahren

Info

Publication number
ATE411616T1
ATE411616T1 AT02743567T AT02743567T ATE411616T1 AT E411616 T1 ATE411616 T1 AT E411616T1 AT 02743567 T AT02743567 T AT 02743567T AT 02743567 T AT02743567 T AT 02743567T AT E411616 T1 ATE411616 T1 AT E411616T1
Authority
AT
Austria
Prior art keywords
semiconductor material
region
doping type
bipolar transistor
layer
Prior art date
Application number
AT02743567T
Other languages
English (en)
Inventor
Hendrik Huizing
Jan Slotboom
Doede Terpstra
Johan Klootwijk
Eyup Aksen
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE411616T1 publication Critical patent/ATE411616T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 

Landscapes

  • Bipolar Transistors (AREA)
AT02743567T 2001-08-06 2002-07-08 Bipolartransistor, halbleiterbauelement und diesbezügliches herstellungsverfahren ATE411616T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01203002 2001-08-06

Publications (1)

Publication Number Publication Date
ATE411616T1 true ATE411616T1 (de) 2008-10-15

Family

ID=8180765

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02743567T ATE411616T1 (de) 2001-08-06 2002-07-08 Bipolartransistor, halbleiterbauelement und diesbezügliches herstellungsverfahren

Country Status (8)

Country Link
US (2) US6759696B2 (de)
EP (1) EP1417714B1 (de)
JP (1) JP2004538645A (de)
KR (1) KR20040030936A (de)
AT (1) ATE411616T1 (de)
DE (1) DE60229400D1 (de)
TW (1) TW571353B (de)
WO (1) WO2003015175A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007036861A2 (en) * 2005-09-30 2007-04-05 Nxp B.V. Semiconductor device with a bipolar transistor and method of manufacturing such a device
DE102006011240A1 (de) * 2006-03-10 2007-09-20 Infineon Technologies Ag Bipolartransistor und Verfahren zum Herstellen eines Bipolartransistors
US7294869B2 (en) * 2006-04-04 2007-11-13 International Business Machines Corporation Silicon germanium emitter
KR101044309B1 (ko) * 2008-08-04 2011-06-29 임강호 전도방지형 안전 사다리
KR200457903Y1 (ko) * 2009-06-09 2012-01-12 김만섭 사다리용 전도방지장치
US9551768B2 (en) 2013-03-15 2017-01-24 East Carolina University NMR method for monitoring changes in the core of lipoprotein particles in metabolism and disease
US9356097B2 (en) * 2013-06-25 2016-05-31 Globalfoundries Inc. Method of forming a bipolar transistor with maskless self-aligned emitter
US9105769B2 (en) * 2013-09-12 2015-08-11 International Business Machines Corporation Shallow junction photovoltaic devices
US10775458B2 (en) 2018-03-05 2020-09-15 Texas Tech University System Method and system for non-invasive measurement of metabolic health

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2590236B2 (ja) * 1987-10-07 1997-03-12 株式会社日立製作所 半導体装置
US5175603A (en) * 1988-01-30 1992-12-29 Kabushiki Kaisha Toshiba Bipolar transistor
JP2728671B2 (ja) * 1988-02-03 1998-03-18 株式会社東芝 バイポーラトランジスタの製造方法
US5548158A (en) * 1994-09-02 1996-08-20 National Semiconductor Corporation Structure of bipolar transistors with improved output current-voltage characteristics
DE19609933A1 (de) * 1996-03-14 1997-09-18 Daimler Benz Ag Verfahren zur Herstellung eines Heterobipolartransistors
JP4150076B2 (ja) * 1996-03-29 2008-09-17 エヌエックスピー ビー ヴィ 半導体装置の製造方法
US6525348B1 (en) * 2001-07-17 2003-02-25 David C. Scott Two terminal edge illuminated epilayer waveguide phototransistor

Also Published As

Publication number Publication date
EP1417714A1 (de) 2004-05-12
US6908804B2 (en) 2005-06-21
KR20040030936A (ko) 2004-04-09
US6759696B2 (en) 2004-07-06
US20030054599A1 (en) 2003-03-20
US20040046187A1 (en) 2004-03-11
EP1417714B1 (de) 2008-10-15
DE60229400D1 (de) 2008-11-27
JP2004538645A (ja) 2004-12-24
WO2003015175A1 (en) 2003-02-20
TW571353B (en) 2004-01-11

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