ATE414995T1 - Polymerer transistor - Google Patents

Polymerer transistor

Info

Publication number
ATE414995T1
ATE414995T1 AT04732344T AT04732344T ATE414995T1 AT E414995 T1 ATE414995 T1 AT E414995T1 AT 04732344 T AT04732344 T AT 04732344T AT 04732344 T AT04732344 T AT 04732344T AT E414995 T1 ATE414995 T1 AT E414995T1
Authority
AT
Austria
Prior art keywords
insulating polymer
transistor
polymeric
polymeric transistor
crosslinked
Prior art date
Application number
AT04732344T
Other languages
English (en)
Inventor
Lay-Lay Chua
Peter Ho
Henning Sirringhaus
Richard Friend
Original Assignee
Cambridge Entpr Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB0310858.6A external-priority patent/GB0310858D0/en
Priority claimed from GB0408539A external-priority patent/GB0408539D0/en
Application filed by Cambridge Entpr Ltd filed Critical Cambridge Entpr Ltd
Application granted granted Critical
Publication of ATE414995T1 publication Critical patent/ATE414995T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C247/00—Compounds containing azido groups
    • C07C247/16—Compounds containing azido groups with azido groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/695—Compositions containing azides as the photosensitive substances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Networks Using Active Elements (AREA)
  • Amplifiers (AREA)
  • Formation Of Insulating Films (AREA)
AT04732344T 2003-05-12 2004-05-12 Polymerer transistor ATE414995T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0310858.6A GB0310858D0 (en) 2003-05-12 2003-05-12 Polymer transistor
GB0408539A GB0408539D0 (en) 2004-04-16 2004-04-16 Polymer transistor

Publications (1)

Publication Number Publication Date
ATE414995T1 true ATE414995T1 (de) 2008-12-15

Family

ID=33436284

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04732344T ATE414995T1 (de) 2003-05-12 2004-05-12 Polymerer transistor

Country Status (5)

Country Link
US (1) US7884355B2 (de)
EP (1) EP1629544B1 (de)
AT (1) ATE414995T1 (de)
DE (1) DE602004017858D1 (de)
WO (1) WO2004100281A1 (de)

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US7994495B2 (en) * 2008-01-16 2011-08-09 Xerox Corporation Organic thin film transistors
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JP4723692B2 (ja) 2008-09-19 2011-07-13 パナソニック株式会社 有機エレクトロルミネッセンス素子及びその製造方法
JP5138542B2 (ja) * 2008-10-24 2013-02-06 パナソニック株式会社 有機エレクトロルミネッセンス素子及びその製造方法
KR100975913B1 (ko) * 2008-10-31 2010-08-13 한국전자통신연구원 유기 박막 트랜지스터용 조성물, 이를 이용하여 형성된 유기 박막 트랜지스터 및 그 형성방법
WO2010092798A1 (ja) 2009-02-10 2010-08-19 パナソニック株式会社 発光素子の製造方法と発光素子、および発光装置の製造方法と発光装置
CN102272970B (zh) 2009-02-10 2014-12-10 松下电器产业株式会社 发光元件、具备发光元件的发光装置以及发光元件的制造方法
JP5513415B2 (ja) 2009-02-10 2014-06-04 パナソニック株式会社 発光素子、表示装置、および発光素子の製造方法
JP5437736B2 (ja) 2009-08-19 2014-03-12 パナソニック株式会社 有機el素子
JP4659141B1 (ja) * 2009-08-31 2011-03-30 パナソニック株式会社 発光素子とその製造方法、および発光装置
CN102473847B (zh) 2010-06-24 2015-01-14 松下电器产业株式会社 有机el元件、显示装置以及发光装置
WO2011161727A1 (ja) 2010-06-24 2011-12-29 パナソニック株式会社 有機el素子の製造方法、表示装置、発光装置および紫外光照射装置
CN103026523B (zh) 2010-07-30 2015-12-09 株式会社日本有机雷特显示器 有机el元件
WO2012017485A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機el素子、表示装置および発光装置
JP5677434B2 (ja) 2010-08-06 2015-02-25 パナソニック株式会社 有機el素子
JP5677432B2 (ja) 2010-08-06 2015-02-25 パナソニック株式会社 有機el素子、表示装置および発光装置
JP5620494B2 (ja) 2010-08-06 2014-11-05 パナソニック株式会社 発光素子、表示装置、および発光素子の製造方法
WO2012017501A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機el素子およびその製造方法
JP5574456B2 (ja) 2010-08-06 2014-08-20 パナソニック株式会社 発光素子とその製造方法、および発光装置
JP5658256B2 (ja) 2010-08-06 2015-01-21 パナソニック株式会社 発光素子とその製造方法、および発光装置
WO2012017502A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機el素子およびその製造方法
CN103053041B (zh) 2010-08-06 2015-11-25 株式会社日本有机雷特显示器 有机el元件
WO2012017490A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機el素子、表示装置および発光装置
CN103038909B (zh) 2010-08-06 2015-07-29 株式会社日本有机雷特显示器 有机el元件及其制造方法
JP5620495B2 (ja) 2010-08-06 2014-11-05 パナソニック株式会社 発光素子、発光素子を備えた発光装置および発光素子の製造方法
WO2012017486A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 発光素子の製造方法
WO2012017499A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機el素子
CN103038908B (zh) 2010-08-06 2016-01-06 株式会社日本有机雷特显示器 发光元件、具备发光元件的发光装置以及发光元件的制造方法
US8884281B2 (en) 2011-01-21 2014-11-11 Panasonic Corporation Organic EL element
JP5884224B2 (ja) 2011-02-23 2016-03-15 株式会社Joled 有機el表示パネルおよび有機el表示装置
WO2012114403A1 (ja) 2011-02-25 2012-08-30 パナソニック株式会社 有機el表示パネルおよび有機el表示装置
JPWO2012153445A1 (ja) 2011-05-11 2014-07-28 パナソニック株式会社 有機el表示パネルおよび有機el表示装置
GB201418610D0 (en) * 2014-10-20 2014-12-03 Cambridge Entpr Ltd Transistor devices
KR102293606B1 (ko) 2014-10-21 2021-08-24 삼성전자주식회사 유기 광전 소자 및 이를 포함하는 이미지 센서와 전자 장치
US10794853B2 (en) * 2016-12-09 2020-10-06 Applied Materials, Inc. Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition
KR102853330B1 (ko) 2018-12-21 2025-09-01 삼성디스플레이 주식회사 아지드 화합물, 이를 포함한 유기 발광 소자 및 이의 제조 방법

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FR2664430B1 (fr) 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
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DE19937262A1 (de) 1999-08-06 2001-03-01 Siemens Ag Anordnung mit Transistor-Funktion
DE10105914C1 (de) 2001-02-09 2002-10-10 Siemens Ag Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung
CN100459163C (zh) * 2001-02-19 2009-02-04 国际商业机器公司 薄膜晶体管结构及其制造方法和使用它的显示器件
US6617609B2 (en) 2001-11-05 2003-09-09 3M Innovative Properties Company Organic thin film transistor with siloxane polymer interface
US6740900B2 (en) * 2002-02-27 2004-05-25 Konica Corporation Organic thin-film transistor and manufacturing method for the same
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods

Also Published As

Publication number Publication date
EP1629544A1 (de) 2006-03-01
US7884355B2 (en) 2011-02-08
DE602004017858D1 (de) 2009-01-02
US20060284166A1 (en) 2006-12-21
WO2004100281A1 (en) 2004-11-18
EP1629544B1 (de) 2008-11-19

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