ATE420459T1 - Ätzen von dotiertem sio2 mit hoher selektivität zu undotiertem sio2 mittels eines plasmaätzgerätes mit hoher dichte - Google Patents

Ätzen von dotiertem sio2 mit hoher selektivität zu undotiertem sio2 mittels eines plasmaätzgerätes mit hoher dichte

Info

Publication number
ATE420459T1
ATE420459T1 AT98938028T AT98938028T ATE420459T1 AT E420459 T1 ATE420459 T1 AT E420459T1 AT 98938028 T AT98938028 T AT 98938028T AT 98938028 T AT98938028 T AT 98938028T AT E420459 T1 ATE420459 T1 AT E420459T1
Authority
AT
Austria
Prior art keywords
silicon dioxide
sio2
density plasma
high density
etch
Prior art date
Application number
AT98938028T
Other languages
English (en)
Inventor
Kei-Yu Ko
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE420459T1 publication Critical patent/ATE420459T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
AT98938028T 1998-07-23 1998-07-23 Ätzen von dotiertem sio2 mit hoher selektivität zu undotiertem sio2 mittels eines plasmaätzgerätes mit hoher dichte ATE420459T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1998/015520 WO2000005756A1 (en) 1998-07-23 1998-07-23 Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcher

Publications (1)

Publication Number Publication Date
ATE420459T1 true ATE420459T1 (de) 2009-01-15

Family

ID=22267559

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98938028T ATE420459T1 (de) 1998-07-23 1998-07-23 Ätzen von dotiertem sio2 mit hoher selektivität zu undotiertem sio2 mittels eines plasmaätzgerätes mit hoher dichte

Country Status (7)

Country Link
EP (1) EP1110238B1 (de)
JP (1) JP3902726B2 (de)
KR (1) KR100521506B1 (de)
AT (1) ATE420459T1 (de)
AU (1) AU8664298A (de)
DE (1) DE69840455D1 (de)
WO (1) WO2000005756A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100714401B1 (ko) 2006-02-08 2007-05-04 삼성전자주식회사 적층된 트랜지스터를 구비하는 반도체 장치 및 그 형성방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4807016A (en) * 1985-07-15 1989-02-21 Texas Instruments Incorporated Dry etch of phosphosilicate glass with selectivity to undoped oxide
KR930005440B1 (ko) * 1989-10-02 1993-06-21 다이닛뽕 스쿠린 세이소오 가부시키가이샤 절연막의 선택적 제거방법
US5286677A (en) * 1993-05-07 1994-02-15 Industrial Technology Research Institute Method for etching improved contact openings to peripheral circuit regions of a dram integrated circuit
US5935877A (en) * 1995-09-01 1999-08-10 Applied Materials, Inc. Etch process for forming contacts over titanium silicide
US5626716A (en) * 1995-09-29 1997-05-06 Lam Research Corporation Plasma etching of semiconductors

Also Published As

Publication number Publication date
AU8664298A (en) 2000-02-14
KR20010106418A (ko) 2001-11-29
JP3902726B2 (ja) 2007-04-11
DE69840455D1 (de) 2009-02-26
EP1110238A1 (de) 2001-06-27
WO2000005756A1 (en) 2000-02-03
KR100521506B1 (ko) 2005-10-12
EP1110238B1 (de) 2009-01-07
JP2002521819A (ja) 2002-07-16

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Legal Events

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