ATE420460T1 - Verfahren zum verarbeiten von rutheniumsilizid - Google Patents
Verfahren zum verarbeiten von rutheniumsilizidInfo
- Publication number
- ATE420460T1 ATE420460T1 AT02717625T AT02717625T ATE420460T1 AT E420460 T1 ATE420460 T1 AT E420460T1 AT 02717625 T AT02717625 T AT 02717625T AT 02717625 T AT02717625 T AT 02717625T AT E420460 T1 ATE420460 T1 AT E420460T1
- Authority
- AT
- Austria
- Prior art keywords
- ruthenium silicide
- exposed
- ruthenium
- silicide
- backside
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/412—Deposition of metallic or metal-silicide materials
- H10P14/414—Deposition of metallic or metal-silicide materials of metal-silicide materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
- H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/66—Wet etching of conductive or resistive materials
- H10P50/663—Wet etching of conductive or resistive materials by chemical means only
- H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
- H10P70/56—Cleaning of wafer backside
Landscapes
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Catalysts (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/810,008 US6399492B1 (en) | 2001-03-15 | 2001-03-15 | Ruthenium silicide processing methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE420460T1 true ATE420460T1 (de) | 2009-01-15 |
Family
ID=25202736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02717625T ATE420460T1 (de) | 2001-03-15 | 2002-03-11 | Verfahren zum verarbeiten von rutheniumsilizid |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6399492B1 (de) |
| EP (1) | EP1368825B1 (de) |
| JP (1) | JP4292502B2 (de) |
| KR (1) | KR100505175B1 (de) |
| CN (1) | CN1271693C (de) |
| AT (1) | ATE420460T1 (de) |
| AU (1) | AU2002248614A1 (de) |
| DE (1) | DE60230725D1 (de) |
| WO (1) | WO2002075803A2 (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498110B2 (en) * | 2001-03-05 | 2002-12-24 | Micron Technology, Inc. | Ruthenium silicide wet etch |
| US7513920B2 (en) * | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
| US20040114867A1 (en) * | 2002-12-17 | 2004-06-17 | Matthew Nielsen | Tunable micro-ring filter for optical WDM/DWDM communication |
| US7597819B1 (en) * | 2004-12-20 | 2009-10-06 | Sandia Corporation | Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films |
| EP1871855B1 (de) | 2005-03-25 | 2010-03-24 | DuPont Air Products NanoMaterials L.L.C. | In chemisch-mechanischen reinigungszusammensetzungen verwendete dihydroxy-enol-verbindungen mit metall-ionen-oxidationsmitteln |
| US7630114B2 (en) * | 2005-10-28 | 2009-12-08 | Idc, Llc | Diffusion barrier layer for MEMS devices |
| US20070295357A1 (en) * | 2006-06-27 | 2007-12-27 | Lovejoy Michael L | Removing metal using an oxidizing chemistry |
| CA2856196C (en) | 2011-12-06 | 2020-09-01 | Masco Corporation Of Indiana | Ozone distribution in a faucet |
| US11458214B2 (en) | 2015-12-21 | 2022-10-04 | Delta Faucet Company | Fluid delivery system including a disinfectant device |
| JP7453874B2 (ja) * | 2020-07-30 | 2024-03-21 | 芝浦メカトロニクス株式会社 | 基板処理方法、および基板処理装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2658966B2 (ja) * | 1995-04-20 | 1997-09-30 | 日本電気株式会社 | フォトマスク及びその製造方法 |
| US6313035B1 (en) * | 1996-05-31 | 2001-11-06 | Micron Technology, Inc. | Chemical vapor deposition using organometallic precursors |
| US6090697A (en) * | 1997-06-30 | 2000-07-18 | Texas Instruments Incorporated | Etchstop for integrated circuits |
| US6153490A (en) * | 1997-07-01 | 2000-11-28 | Texas Instruments Incorporated | Method for forming integrated circuit capacitor and memory |
| US6197628B1 (en) * | 1998-08-27 | 2001-03-06 | Micron Technology, Inc. | Ruthenium silicide diffusion barrier layers and methods of forming same |
| US6063705A (en) * | 1998-08-27 | 2000-05-16 | Micron Technology, Inc. | Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide |
| US6074945A (en) * | 1998-08-27 | 2000-06-13 | Micron Technology, Inc. | Methods for preparing ruthenium metal films |
| US6133159A (en) | 1998-08-27 | 2000-10-17 | Micron Technology, Inc. | Methods for preparing ruthenium oxide films |
| US5962716A (en) | 1998-08-27 | 1999-10-05 | Micron Technology, Inc. | Methods for preparing ruthenium and osmium compounds |
| US6284655B1 (en) * | 1998-09-03 | 2001-09-04 | Micron Technology, Inc. | Method for producing low carbon/oxygen conductive layers |
| US6342446B1 (en) * | 1998-10-06 | 2002-01-29 | Texas Instruments Incorporated | Plasma process for organic residue removal from copper |
| JP3676958B2 (ja) * | 1999-12-28 | 2005-07-27 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
-
2001
- 2001-03-15 US US09/810,008 patent/US6399492B1/en not_active Expired - Lifetime
-
2002
- 2002-03-11 AT AT02717625T patent/ATE420460T1/de not_active IP Right Cessation
- 2002-03-11 WO PCT/US2002/007648 patent/WO2002075803A2/en not_active Ceased
- 2002-03-11 DE DE60230725T patent/DE60230725D1/de not_active Expired - Lifetime
- 2002-03-11 EP EP02717625A patent/EP1368825B1/de not_active Expired - Lifetime
- 2002-03-11 KR KR10-2003-7010253A patent/KR100505175B1/ko not_active Expired - Fee Related
- 2002-03-11 CN CNB028066537A patent/CN1271693C/zh not_active Expired - Fee Related
- 2002-03-11 AU AU2002248614A patent/AU2002248614A1/en not_active Abandoned
- 2002-03-11 JP JP2002574120A patent/JP4292502B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002075803A3 (en) | 2003-05-01 |
| EP1368825A2 (de) | 2003-12-10 |
| DE60230725D1 (de) | 2009-02-26 |
| KR20030074777A (ko) | 2003-09-19 |
| CN1533598A (zh) | 2004-09-29 |
| US6399492B1 (en) | 2002-06-04 |
| JP2004527115A (ja) | 2004-09-02 |
| JP4292502B2 (ja) | 2009-07-08 |
| AU2002248614A1 (en) | 2002-10-03 |
| WO2002075803A2 (en) | 2002-09-26 |
| CN1271693C (zh) | 2006-08-23 |
| KR100505175B1 (ko) | 2005-08-02 |
| EP1368825B1 (de) | 2009-01-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |