ATE409957T1 - Verfahren zur nassätzung von rutheniumsilizid - Google Patents

Verfahren zur nassätzung von rutheniumsilizid

Info

Publication number
ATE409957T1
ATE409957T1 AT02713678T AT02713678T ATE409957T1 AT E409957 T1 ATE409957 T1 AT E409957T1 AT 02713678 T AT02713678 T AT 02713678T AT 02713678 T AT02713678 T AT 02713678T AT E409957 T1 ATE409957 T1 AT E409957T1
Authority
AT
Austria
Prior art keywords
ruthenium silicide
wet etching
etching ruthenium
silicide
solution
Prior art date
Application number
AT02713678T
Other languages
English (en)
Inventor
Brenda Kraus
Michael Andreas
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE409957T1 publication Critical patent/ATE409957T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
AT02713678T 2001-03-05 2002-02-22 Verfahren zur nassätzung von rutheniumsilizid ATE409957T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/799,791 US6498110B2 (en) 2001-03-05 2001-03-05 Ruthenium silicide wet etch

Publications (1)

Publication Number Publication Date
ATE409957T1 true ATE409957T1 (de) 2008-10-15

Family

ID=25176753

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02713678T ATE409957T1 (de) 2001-03-05 2002-02-22 Verfahren zur nassätzung von rutheniumsilizid

Country Status (9)

Country Link
US (4) US6498110B2 (de)
EP (1) EP1366510B1 (de)
JP (1) JP4054887B2 (de)
KR (1) KR100576261B1 (de)
CN (1) CN1290164C (de)
AT (1) ATE409957T1 (de)
AU (1) AU2002245516A1 (de)
DE (1) DE60229110D1 (de)
WO (1) WO2002071447A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6498110B2 (en) * 2001-03-05 2002-12-24 Micron Technology, Inc. Ruthenium silicide wet etch
US7320942B2 (en) * 2002-05-21 2008-01-22 Applied Materials, Inc. Method for removal of metallic residue after plasma etching of a metal layer
AT413360B (de) * 2002-08-06 2006-02-15 Hueck Folien Gmbh Verfahren zur herstellung von fälschungssicheren identifikationsmerkmalen
KR20040035280A (ko) * 2002-10-19 2004-04-29 주성엔지니어링(주) 증착 챔버의 인시튜 세정방법
US20050110142A1 (en) * 2003-11-26 2005-05-26 Lane Michael W. Diffusion barriers formed by low temperature deposition
EP2268765A4 (de) * 2008-03-07 2011-10-26 Advanced Tech Materials Unselektives oxidätz-nassreinigungsmittel und verwendung
US8211800B2 (en) * 2010-08-23 2012-07-03 Kabushiki Kaisha Toshiba Ru cap metal post cleaning method and cleaning chemical
US12024663B2 (en) * 2019-02-13 2024-07-02 Tokuyama Corporation Onium salt-containing treatment liquid for semiconductor wafers
CN116583494A (zh) * 2020-12-18 2023-08-11 大金工业株式会社 氟化有机化合物的制造方法
CN114724948B (zh) * 2022-03-30 2025-11-04 青岛惠科微电子有限公司 硅片的湿法蚀刻方法和装置
KR20250101895A (ko) 2023-12-27 2025-07-04 가부시끼가이샤 도꾸야마 규화루테늄 제거용 반도체 처리액

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE205292C (de)
GB817123A (en) * 1956-11-20 1959-07-22 Amchem Prod Improvements in or relating to the production of a bright surface on zirconium, titanium and their alloys
US3791948A (en) * 1971-11-01 1974-02-12 Bell Telephone Labor Inc Preferential etching in g a p
US3968565A (en) * 1972-09-01 1976-07-13 U.S. Philips Corporation Method of manufacturing a device comprising a semiconductor body
US4199337A (en) * 1978-10-06 1980-04-22 International Telephone And Telegraph Corporation Method of fabricating high strength optical preforms
DD205292A1 (de) * 1981-12-24 1983-12-21 Univ Berlin Humboldt Verfahren zur chemischen bearbeitung von gap-oberflaechen
JP2867922B2 (ja) 1995-07-11 1999-03-10 日本電気株式会社 ポーリング方式
JPH09279189A (ja) * 1996-04-08 1997-10-28 Nippon Steel Corp 半導体基板用洗浄液
US6197628B1 (en) * 1998-08-27 2001-03-06 Micron Technology, Inc. Ruthenium silicide diffusion barrier layers and methods of forming same
JP3953265B2 (ja) * 1999-10-06 2007-08-08 株式会社荏原製作所 基板洗浄方法及びその装置
JP3358604B2 (ja) * 1999-11-11 2002-12-24 日本電気株式会社 白金族不純物回収液及びその回収方法
JP3619745B2 (ja) * 1999-12-20 2005-02-16 株式会社日立製作所 固体表面の処理方法及び処理液並びにこれらを用いた電子デバイスの製造方法
US6498110B2 (en) * 2001-03-05 2002-12-24 Micron Technology, Inc. Ruthenium silicide wet etch
US6399492B1 (en) * 2001-03-15 2002-06-04 Micron Technology, Inc. Ruthenium silicide processing methods

Also Published As

Publication number Publication date
KR100576261B1 (ko) 2006-05-03
WO2002071447A2 (en) 2002-09-12
WO2002071447A8 (en) 2003-10-23
JP2004533712A (ja) 2004-11-04
DE60229110D1 (de) 2008-11-13
KR20030087633A (ko) 2003-11-14
EP1366510A2 (de) 2003-12-03
US6908569B2 (en) 2005-06-21
JP4054887B2 (ja) 2008-03-05
US20020148998A1 (en) 2002-10-17
US20020123235A1 (en) 2002-09-05
WO2002071447A3 (en) 2003-04-10
CN1290164C (zh) 2006-12-13
US20050263489A1 (en) 2005-12-01
US6740252B2 (en) 2004-05-25
EP1366510B1 (de) 2008-10-01
AU2002245516A1 (en) 2002-09-19
US20030205689A1 (en) 2003-11-06
US6498110B2 (en) 2002-12-24
CN1507655A (zh) 2004-06-23

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Legal Events

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