ATE421114T1 - Beleuchtungsvorrichtung einer fotolithographievorrichtung - Google Patents

Beleuchtungsvorrichtung einer fotolithographievorrichtung

Info

Publication number
ATE421114T1
ATE421114T1 AT06793241T AT06793241T ATE421114T1 AT E421114 T1 ATE421114 T1 AT E421114T1 AT 06793241 T AT06793241 T AT 06793241T AT 06793241 T AT06793241 T AT 06793241T AT E421114 T1 ATE421114 T1 AT E421114T1
Authority
AT
Austria
Prior art keywords
shutter
light beam
plate
photolithography
microlenses
Prior art date
Application number
AT06793241T
Other languages
English (en)
Inventor
Miguel Boutonne
Ythier Renaud Mercier
Francois Riguet
Original Assignee
Sagem Defense Securite
Shanghai Microelectronics Equi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sagem Defense Securite, Shanghai Microelectronics Equi filed Critical Sagem Defense Securite
Application granted granted Critical
Publication of ATE421114T1 publication Critical patent/ATE421114T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Display Devices Of Pinball Game Machines (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
AT06793241T 2005-09-05 2006-09-05 Beleuchtungsvorrichtung einer fotolithographievorrichtung ATE421114T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0509036A FR2890461B1 (fr) 2005-09-05 2005-09-05 Obturateur et illuminateur d'un dispositif de photolithographie

Publications (1)

Publication Number Publication Date
ATE421114T1 true ATE421114T1 (de) 2009-01-15

Family

ID=36501946

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06793241T ATE421114T1 (de) 2005-09-05 2006-09-05 Beleuchtungsvorrichtung einer fotolithographievorrichtung

Country Status (9)

Country Link
US (1) US7982855B2 (de)
EP (1) EP1924889B1 (de)
JP (1) JP5113753B2 (de)
KR (1) KR101274159B1 (de)
CN (1) CN101273304B (de)
AT (1) ATE421114T1 (de)
DE (1) DE602006004890D1 (de)
FR (1) FR2890461B1 (de)
WO (1) WO2007028793A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090233456A1 (en) * 2008-03-17 2009-09-17 Sony Corporation Irradiation optical system, irradiation apparatus and fabrication method for semiconductor device
JP5326928B2 (ja) * 2009-08-19 2013-10-30 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
FR2996015B1 (fr) * 2012-09-25 2014-09-12 Sagem Defense Securite Illuminateur de dispositif de photolithographie permettant la diffraction controlee
FR2996016B1 (fr) * 2012-09-25 2014-09-19 Sagem Defense Securite Illuminateur de photolithographie telecentrique selon deux directions
WO2014139543A1 (en) * 2013-03-13 2014-09-18 Carl Zeiss Smt Gmbh Microlithographic apparatus
CN103412465B (zh) 2013-07-01 2015-04-15 中国科学院上海光学精密机械研究所 步进扫描投影光刻机的照明系统
CN103399463B (zh) 2013-07-19 2015-07-29 中国科学院上海光学精密机械研究所 投影光刻机照明装置和使用方法

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JP2848425B2 (ja) * 1992-06-02 1999-01-20 富士通株式会社 光露光方法
JPS58147708A (ja) 1982-02-26 1983-09-02 Nippon Kogaku Kk <Nikon> 照明用光学装置
JPS6247124A (ja) * 1985-08-27 1987-02-28 Canon Inc 露光装置用高速シヤツタ−
JPH01175730A (ja) * 1987-12-29 1989-07-12 Matsushita Electric Ind Co Ltd 露光装置
AT393334B (de) * 1988-01-22 1991-09-25 Ims Ionen Mikrofab Syst Anordnung zur stabilisierung einer bestrahlten maske
US5130213A (en) * 1989-08-07 1992-07-14 At&T Bell Laboratories Device manufacture involving lithographic processing
JP3428055B2 (ja) * 1992-11-05 2003-07-22 株式会社ニコン 照明光学装置、露光装置、半導体製造方法および露光方法
JP3368654B2 (ja) * 1994-03-23 2003-01-20 株式会社ニコン 照明光学装置及び転写方法
US5591958A (en) * 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
US5815248A (en) * 1993-04-22 1998-09-29 Nikon Corporation Illumination optical apparatus and method having a wavefront splitter and an optical integrator
US5854671A (en) * 1993-05-28 1998-12-29 Nikon Corporation Scanning exposure method and apparatus therefor and a projection exposure apparatus and method which selectively chooses between static exposure and scanning exposure
JPH07120850A (ja) * 1993-10-26 1995-05-12 Adtec Eng:Kk 露光装置光源用シャッタ装置
JP2723081B2 (ja) * 1995-05-15 1998-03-09 日本電気株式会社 スキャン露光方式における照度むら検出方法
JP2674578B2 (ja) * 1995-08-29 1997-11-12 株式会社ニコン 走査露光装置及び露光方法
JP3286184B2 (ja) * 1996-09-25 2002-05-27 キヤノン株式会社 走査露光装置および方法
JPH10104546A (ja) * 1996-09-27 1998-04-24 Nikon Corp オプティカルインテグレータおよび該オプティカルインテグレータを備えた照明装置
JP2830868B2 (ja) * 1997-01-23 1998-12-02 株式会社ニコン 投影露光装置及び走査露光方法
US6930754B1 (en) * 1998-06-30 2005-08-16 Canon Kabushiki Kaisha Multiple exposure method
US6556361B1 (en) * 1999-03-17 2003-04-29 Rochester Institute Of Technology Projection imaging system with a non-circular aperture and a method thereof
US6219171B1 (en) * 1999-06-03 2001-04-17 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and method for stepper exposure control in photography
WO2002029870A1 (en) * 2000-10-05 2002-04-11 Nikon Corporation Method of determining exposure conditions, exposure method, device producing method and recording medium
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EP1434092A1 (de) * 2002-12-23 2004-06-30 ASML Netherlands B.V. Lithographischer Apparat, Verfahren zur Herstellung eines Artikels und damit erzeugter Artikel

Also Published As

Publication number Publication date
KR20080071550A (ko) 2008-08-04
WO2007028793A1 (fr) 2007-03-15
DE602006004890D1 (de) 2009-03-05
US20090257041A1 (en) 2009-10-15
FR2890461B1 (fr) 2008-12-26
CN101273304A (zh) 2008-09-24
JP5113753B2 (ja) 2013-01-09
KR101274159B1 (ko) 2013-06-13
JP2009507387A (ja) 2009-02-19
CN101273304B (zh) 2011-05-11
US7982855B2 (en) 2011-07-19
EP1924889A1 (de) 2008-05-28
EP1924889B1 (de) 2009-01-14
FR2890461A1 (fr) 2007-03-09

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