ATE421145T1 - Aktive abschirmung für eine schaltung mit magnetisch empfindlichen materialien - Google Patents

Aktive abschirmung für eine schaltung mit magnetisch empfindlichen materialien

Info

Publication number
ATE421145T1
ATE421145T1 AT04769833T AT04769833T ATE421145T1 AT E421145 T1 ATE421145 T1 AT E421145T1 AT 04769833 T AT04769833 T AT 04769833T AT 04769833 T AT04769833 T AT 04769833T AT E421145 T1 ATE421145 T1 AT E421145T1
Authority
AT
Austria
Prior art keywords
circuit
sensitive materials
magnetically sensitive
shielding
active shielding
Prior art date
Application number
AT04769833T
Other languages
English (en)
Inventor
Kars-Michiel Lenssen
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE421145T1 publication Critical patent/ATE421145T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/025—Compensating stray fields
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1695—Protection circuits or methods

Landscapes

  • Computer Hardware Design (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hard Magnetic Materials (AREA)
  • Soft Magnetic Materials (AREA)
  • Semiconductor Memories (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Measuring Magnetic Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT04769833T 2003-09-02 2004-08-20 Aktive abschirmung für eine schaltung mit magnetisch empfindlichen materialien ATE421145T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49955603P 2003-09-02 2003-09-02

Publications (1)

Publication Number Publication Date
ATE421145T1 true ATE421145T1 (de) 2009-01-15

Family

ID=34272840

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04769833T ATE421145T1 (de) 2003-09-02 2004-08-20 Aktive abschirmung für eine schaltung mit magnetisch empfindlichen materialien

Country Status (9)

Country Link
US (2) US7474547B2 (de)
EP (1) EP1665279B1 (de)
JP (1) JP2007504455A (de)
KR (1) KR20060125695A (de)
CN (1) CN100541653C (de)
AT (1) ATE421145T1 (de)
DE (1) DE602004019115D1 (de)
TW (1) TW200517047A (de)
WO (1) WO2005022546A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1690263B1 (de) * 2003-11-24 2013-05-08 Crocus Technology, Inc. Datenzustandsanzeige für magnetoresistives speicherarray
DE102006032277B4 (de) * 2006-07-12 2017-06-01 Infineon Technologies Ag Magnetfeldsensorbauelement
EP2135254B1 (de) 2007-03-09 2016-05-25 NVE Corporation Belastbare magnetoresistive fälschungserkennungsvorrichtungen
CN101453868B (zh) * 2007-12-04 2011-06-22 北京卫星环境工程研究所 磁环境模拟试验设备的外干扰控制系统及控制方法
US20090159705A1 (en) * 2007-12-24 2009-06-25 Dynamics Inc. Payment cards and devices operable to receive point-of-sale actions before point-of-sale and forward actions at point-of-sale
US20090273044A1 (en) * 2008-05-05 2009-11-05 Rainer Leuschner Semiconductor Device, Memory Module, and Method of Manufacturing a Semiconductor Device
US9121883B2 (en) * 2011-10-14 2015-09-01 Landis+Gyr, Inc. Magnetic tampering detection and correction in a utility meter
KR20140021781A (ko) 2012-08-10 2014-02-20 삼성전자주식회사 가변 저항 메모리를 포함하는 반도체 메모리 장치
DE102013204952B3 (de) * 2013-03-20 2014-05-15 Bruker Biospin Ag Aktiv abgeschirmtes zylinderförmiges Gradientenspulensystem mit passiver HF-Abschirmung für NMR-Apparate
CN103701961B (zh) * 2013-12-26 2016-07-13 惠州Tcl移动通信有限公司 一种防止移动终端保护套翻折关屏的结构及方法
US9506950B2 (en) 2014-03-17 2016-11-29 Landis+Gyr, Inc. Tampering detection for an electric meter
US20170059669A1 (en) * 2015-08-26 2017-03-02 Qualcomm Incorporated Magnetic field enhancing backing plate for mram wafer testing
DE102016105380A1 (de) * 2016-03-22 2017-09-28 Infineon Technologies Ag Elektrischer Schirm zwischen magnetoresistiven Sensorelementen
JP6569632B2 (ja) * 2016-09-29 2019-09-04 トヨタ自動車株式会社 ハイブリッド車両の制御装置
US10921390B2 (en) * 2019-05-31 2021-02-16 Nxp Usa, Inc. Magnetic attack detection in a magnetic random access memory (MRAM)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08153310A (ja) * 1994-11-28 1996-06-11 Sony Corp 磁気抵抗効果型薄膜磁気ヘッド
SE506698C2 (sv) * 1995-06-27 1998-02-02 Volvo Ab Anordning och förfarande för reducering av magnetiska växelfält
US6690553B2 (en) * 1996-08-26 2004-02-10 Kabushiki Kaisha Toshiba Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus
JPH10340430A (ja) * 1997-06-10 1998-12-22 Fujitsu Ltd スピンバルブ磁気抵抗効果型ヘッドおよび磁気記憶装置
US6872993B1 (en) * 1999-05-25 2005-03-29 Micron Technology, Inc. Thin film memory device having local and external magnetic shielding
US6188615B1 (en) * 1999-10-29 2001-02-13 Hewlett-Packard Company MRAM device including digital sense amplifiers
CN1280831C (zh) 2000-06-23 2006-10-18 皇家菲利浦电子有限公司 磁存储器
DE10032278C1 (de) * 2000-07-03 2001-11-29 Infineon Technologies Ag Verfahren zur Verhinderung von Elektromigration in einem MRAM
JP4726290B2 (ja) * 2000-10-17 2011-07-20 ルネサスエレクトロニクス株式会社 半導体集積回路
DE10053965A1 (de) * 2000-10-31 2002-06-20 Infineon Technologies Ag Verfahren zur Verhinderung unerwünschter Programmierungen in einer MRAM-Anordnung
US6724674B2 (en) * 2000-11-08 2004-04-20 International Business Machines Corporation Memory storage device with heating element
US6724582B2 (en) * 2001-01-19 2004-04-20 Kabushiki Kaisha Toshiba Current perpendicular to plane type magnetoresistive device, magnetic head, and magnetic recording/reproducing apparatus
US6717403B2 (en) * 2001-09-06 2004-04-06 Honeywell International Inc. Method and system for improving the efficiency of the set and offset straps on a magnetic sensor
WO2003104829A1 (en) * 2002-06-06 2003-12-18 Koninklijke Philips Electronics N.V. Sensor and method for measuring a current of charged particles

Also Published As

Publication number Publication date
EP1665279B1 (de) 2009-01-14
WO2005022546A1 (en) 2005-03-10
DE602004019115D1 (de) 2009-03-05
EP1665279A1 (de) 2006-06-07
US20060262585A1 (en) 2006-11-23
JP2007504455A (ja) 2007-03-01
CN100541653C (zh) 2009-09-16
TW200517047A (en) 2005-05-16
US7791920B2 (en) 2010-09-07
US7474547B2 (en) 2009-01-06
US20090073738A1 (en) 2009-03-19
CN1846276A (zh) 2006-10-11
KR20060125695A (ko) 2006-12-06

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties