ATE421167T1 - Verfahren zum ätzen einer schicht mittels hilfselementen - Google Patents

Verfahren zum ätzen einer schicht mittels hilfselementen

Info

Publication number
ATE421167T1
ATE421167T1 AT00962032T AT00962032T ATE421167T1 AT E421167 T1 ATE421167 T1 AT E421167T1 AT 00962032 T AT00962032 T AT 00962032T AT 00962032 T AT00962032 T AT 00962032T AT E421167 T1 ATE421167 T1 AT E421167T1
Authority
AT
Austria
Prior art keywords
raised structure
layer
wafer
adjacent
patterned masking
Prior art date
Application number
AT00962032T
Other languages
English (en)
Inventor
Nan Zhang
Original Assignee
Adc Telecommunications Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adc Telecommunications Inc filed Critical Adc Telecommunications Inc
Application granted granted Critical
Publication of ATE421167T1 publication Critical patent/ATE421167T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B81C1/00404—Mask characterised by its size, orientation or shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B81C1/00412—Mask characterised by its behaviour during the etching process, e.g. soluble masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/694—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks or redeposited masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • Weting (AREA)
AT00962032T 1999-08-11 2000-08-01 Verfahren zum ätzen einer schicht mittels hilfselementen ATE421167T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/372,700 US6242363B1 (en) 1999-08-11 1999-08-11 Method of etching a wafer layer using a sacrificial wall to form vertical sidewall

Publications (1)

Publication Number Publication Date
ATE421167T1 true ATE421167T1 (de) 2009-01-15

Family

ID=23469272

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00962032T ATE421167T1 (de) 1999-08-11 2000-08-01 Verfahren zum ätzen einer schicht mittels hilfselementen

Country Status (7)

Country Link
US (2) US6242363B1 (de)
EP (1) EP1221176B1 (de)
AT (1) ATE421167T1 (de)
AU (1) AU7390000A (de)
DE (1) DE60041410D1 (de)
TW (1) TW529057B (de)
WO (1) WO2001011672A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6316282B1 (en) * 1999-08-11 2001-11-13 Adc Telecommunications, Inc. Method of etching a wafer layer using multiple layers of the same photoresistant material
US6544898B2 (en) * 2001-06-25 2003-04-08 Adc Telecommunications, Inc. Method for improved die release of a semiconductor device from a wafer
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US7906058B2 (en) * 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
US7803308B2 (en) 2005-12-01 2010-09-28 Molecular Imprints, Inc. Technique for separating a mold from solidified imprinting material
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
MY144847A (en) 2005-12-08 2011-11-30 Molecular Imprints Inc Method and system for double-sided patterning of substrates
US8142850B2 (en) 2006-04-03 2012-03-27 Molecular Imprints, Inc. Patterning a plurality of fields on a substrate to compensate for differing evaporation times
JP5306989B2 (ja) * 2006-04-03 2013-10-02 モレキュラー・インプリンツ・インコーポレーテッド 複数のフィールド及びアライメント・マークを有する基板を同時にパターニングする方法
US8850980B2 (en) 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
US7802978B2 (en) 2006-04-03 2010-09-28 Molecular Imprints, Inc. Imprinting of partial fields at the edge of the wafer
US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
US7547398B2 (en) 2006-04-18 2009-06-16 Molecular Imprints, Inc. Self-aligned process for fabricating imprint templates containing variously etched features
CN113582130B (zh) * 2021-07-27 2024-01-05 绍兴中芯集成电路制造股份有限公司 基于晶圆制备mems器件的方法

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JP2657378B2 (ja) 1987-05-20 1997-09-24 日本テキサス・インスツルメンツ株式会社 光スイッチング装置
US5420067A (en) * 1990-09-28 1995-05-30 The United States Of America As Represented By The Secretary Of The Navy Method of fabricatring sub-half-micron trenches and holes
US5110760A (en) * 1990-09-28 1992-05-05 The United States Of America As Represented By The Secretary Of The Navy Method of nanometer lithography
JPH0543399A (ja) 1991-03-08 1993-02-23 Ricoh Co Ltd 薄膜機能部材
US5148506A (en) 1991-04-26 1992-09-15 Texas Instruments Incorporated Optical crossbar switch
US5155778A (en) 1991-06-28 1992-10-13 Texas Instruments Incorporated Optical switch using spatial light modulators
US5232866A (en) * 1991-10-23 1993-08-03 International Business Machines Corporation Isolated films using an air dielectric
US5199088A (en) 1991-12-31 1993-03-30 Texas Instruments Incorporated Fiber optic switch with spatial light modulator device
JPH0621701A (ja) 1992-06-30 1994-01-28 Taiyo Yuden Co Ltd 誘電体共振器を含むフィルタ装置
US5239599A (en) 1992-08-13 1993-08-24 Jds Fitel Inc. Moving fiber optical fiber switch
EP0683921B1 (de) 1993-02-04 2004-06-16 Cornell Research Foundation, Inc. Mikrostrukturen und einzelmask, einkristall-herstellungsverfahren
US5616514A (en) * 1993-06-03 1997-04-01 Robert Bosch Gmbh Method of fabricating a micromechanical sensor
US5345521A (en) 1993-07-12 1994-09-06 Texas Instrument Incorporated Architecture for optical switch
JPH07106327A (ja) 1993-10-06 1995-04-21 Toshiba Corp 半導体装置及びその製造方法
US5618383A (en) * 1994-03-30 1997-04-08 Texas Instruments Incorporated Narrow lateral dimensioned microelectronic structures and method of forming the same
WO1996016435A2 (en) 1994-11-23 1996-05-30 Philips Electronics N.V. Semiconductor device provided with a microcomponent having a fixed and a movable electrode
US5594820A (en) 1995-02-08 1997-01-14 Jds Fitel Inc. Opto-mechanical device having optical element movable by twin flexures
US5594818A (en) 1995-03-08 1997-01-14 Lucent Technologies Inc. Digital optical switch and modulator and a method for digital optical switching and modulation
US5623564A (en) 1995-06-07 1997-04-22 Lucent Technologies Inc. Self-aligned mechanical optical switch
FR2736934B1 (fr) * 1995-07-21 1997-08-22 Commissariat Energie Atomique Procede de fabrication d'une structure avec une couche utile maintenue a distance d'un substrat par des butees, et de desolidarisation d'une telle couche
CA2156029C (en) 1995-08-14 2000-02-29 John O. Smiley Optical switching device
US5705433A (en) * 1995-08-24 1998-01-06 Applied Materials, Inc. Etching silicon-containing materials by use of silicon-containing compounds
US5623568A (en) 1995-09-15 1997-04-22 Lucent Technologies Inc. Compact and fabrication tolerant high speed digital optical Y-switches
US5661591A (en) 1995-09-29 1997-08-26 Texas Instruments Incorporated Optical switch having an analog beam for steering light
US5627924A (en) 1996-01-18 1997-05-06 Lucent Technologies Inc. Article comprising a non-mechanical optical fiber switch
US5778513A (en) 1996-02-09 1998-07-14 Denny K. Miu Bulk fabricated electromagnetic micro-relays/micro-switches and method of making same
US5684631A (en) 1996-05-13 1997-11-04 Lucent Technologies Inc. Optical modulator/switch including reflective zone plate and related method of use
US5706123A (en) 1996-09-27 1998-01-06 Texas Instruments Incorporated Switched control signals for digital micro-mirror device with split reset
US5774604A (en) 1996-10-23 1998-06-30 Texas Instruments Incorporated Using an asymmetric element to create a 1XN optical switch
US5761350A (en) 1997-01-22 1998-06-02 Koh; Seungug Method and apparatus for providing a seamless electrical/optical multi-layer micro-opto-electro-mechanical system assembly
US5790720A (en) 1997-05-06 1998-08-04 Lucent Technologies, Inc. Acoustic-optic silica optical circuit switch
US5808780A (en) 1997-06-09 1998-09-15 Texas Instruments Incorporated Non-contacting micromechanical optical switch

Also Published As

Publication number Publication date
EP1221176B1 (de) 2009-01-14
TW529057B (en) 2003-04-21
AU7390000A (en) 2001-03-05
US20010009777A1 (en) 2001-07-26
DE60041410D1 (de) 2009-03-05
EP1221176A2 (de) 2002-07-10
WO2001011672A1 (en) 2001-02-15
WO2001011672A8 (en) 2001-06-14
US6242363B1 (en) 2001-06-05

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