ATE421905T1 - Lactam-zusammensetzungen zum entfernen von organischen und plasma-geätzten rückständen auf halbleitern - Google Patents

Lactam-zusammensetzungen zum entfernen von organischen und plasma-geätzten rückständen auf halbleitern

Info

Publication number
ATE421905T1
ATE421905T1 AT00950373T AT00950373T ATE421905T1 AT E421905 T1 ATE421905 T1 AT E421905T1 AT 00950373 T AT00950373 T AT 00950373T AT 00950373 T AT00950373 T AT 00950373T AT E421905 T1 ATE421905 T1 AT E421905T1
Authority
AT
Austria
Prior art keywords
percent
weight
composition
organic
semiconductors
Prior art date
Application number
AT00950373T
Other languages
English (en)
Inventor
Jun Cheng
Robert Small
Bakul Patel
Original Assignee
Ekc Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ekc Technology Inc filed Critical Ekc Technology Inc
Application granted granted Critical
Publication of ATE421905T1 publication Critical patent/ATE421905T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT00950373T 1999-07-16 2000-07-17 Lactam-zusammensetzungen zum entfernen von organischen und plasma-geätzten rückständen auf halbleitern ATE421905T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/354,834 US6235693B1 (en) 1999-07-16 1999-07-16 Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices

Publications (1)

Publication Number Publication Date
ATE421905T1 true ATE421905T1 (de) 2009-02-15

Family

ID=23395085

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00950373T ATE421905T1 (de) 1999-07-16 2000-07-17 Lactam-zusammensetzungen zum entfernen von organischen und plasma-geätzten rückständen auf halbleitern

Country Status (10)

Country Link
US (1) US6235693B1 (de)
EP (1) EP1212150B1 (de)
JP (1) JP2003507901A (de)
KR (1) KR20020031159A (de)
AT (1) ATE421905T1 (de)
AU (1) AU6348600A (de)
DE (1) DE60041497D1 (de)
HK (1) HK1047063A1 (de)
TW (2) TWI283705B (de)
WO (1) WO2001005524A1 (de)

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US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
US6755989B2 (en) * 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6896826B2 (en) 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US7135445B2 (en) * 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
US6472335B1 (en) * 1998-10-19 2002-10-29 Taiwan Semiconductor Manufacturing Company Methods of adhesion promoter between low-K layer and underlying insulating layer
JP4516176B2 (ja) * 1999-04-20 2010-08-04 関東化学株式会社 電子材料用基板洗浄液
US7427529B2 (en) * 2000-06-06 2008-09-23 Simon Fraser University Deposition of permanent polymer structures for OLED fabrication
JP4959095B2 (ja) * 2000-07-10 2012-06-20 イーケイシー テクノロジー インコーポレーテッド 半導体デバイスの有機及びプラズマエッチング残さの洗浄用組成物
US7456140B2 (en) 2000-07-10 2008-11-25 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US6762132B1 (en) 2000-08-31 2004-07-13 Micron Technology, Inc. Compositions for dissolution of low-K dielectric films, and methods of use
US6656894B2 (en) * 2000-12-07 2003-12-02 Ashland Inc. Method for cleaning etcher parts
MY143399A (en) 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
US7077880B2 (en) * 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
WO2003064581A1 (en) * 2002-01-28 2003-08-07 Ekc Technology, Inc. Methods and compositions for chemically treating a substrate using foam technology
US20030171239A1 (en) * 2002-01-28 2003-09-11 Patel Bakul P. Methods and compositions for chemically treating a substrate using foam technology
US7513920B2 (en) * 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US6773873B2 (en) 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
JP4314320B2 (ja) * 2002-04-10 2009-08-12 三菱電機株式会社 化合物半導体装置の製造方法
JP2003332465A (ja) * 2002-05-14 2003-11-21 Mitsubishi Electric Corp 半導体メモリデバイスの製造方法
US7320942B2 (en) * 2002-05-21 2008-01-22 Applied Materials, Inc. Method for removal of metallic residue after plasma etching of a metal layer
US7252718B2 (en) * 2002-05-31 2007-08-07 Ekc Technology, Inc. Forming a passivating aluminum fluoride layer and removing same for use in semiconductor manufacture
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US6677286B1 (en) * 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
US6849200B2 (en) * 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
US20040217006A1 (en) * 2003-03-18 2004-11-04 Small Robert J. Residue removers for electrohydrodynamic cleaning of semiconductors
US7344988B2 (en) * 2003-10-27 2008-03-18 Dupont Air Products Nanomaterials Llc Alumina abrasive for chemical mechanical polishing
US20050126588A1 (en) * 2003-11-04 2005-06-16 Carter Melvin K. Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor
US7419911B2 (en) * 2003-11-10 2008-09-02 Ekc Technology, Inc. Compositions and methods for rapidly removing overfilled substrates
US7862662B2 (en) * 2005-12-30 2011-01-04 Lam Research Corporation Method and material for cleaning a substrate
KR100795364B1 (ko) * 2004-02-10 2008-01-17 삼성전자주식회사 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법
KR20050110470A (ko) * 2004-05-19 2005-11-23 테크노세미켐 주식회사 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법
US20060094612A1 (en) * 2004-11-04 2006-05-04 Mayumi Kimura Post etch cleaning composition for use with substrates having aluminum
CN101228481B (zh) * 2005-02-25 2012-12-05 Ekc技术公司 从包括铜和低k电介体的基片上除去抗蚀剂、蚀刻残余物和氧化铜的方法
JP2008546036A (ja) 2005-06-07 2008-12-18 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 金属および誘電体相溶性の犠牲反射防止コーティング浄化および除去組成物
TWI339780B (en) * 2005-07-28 2011-04-01 Rohm & Haas Elect Mat Stripper
JP4734090B2 (ja) * 2005-10-31 2011-07-27 株式会社東芝 半導体装置の製造方法
EP1946358A4 (de) * 2005-11-09 2009-03-04 Advanced Tech Materials Zusammensetzung und verfahren zum recycling von halbleiterwafern mit materialien mit niedriger dielektrizitätskonstante
US7534753B2 (en) 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
KR100823714B1 (ko) * 2006-08-24 2008-04-21 삼성전자주식회사 폴리머 제거용 세정액 및 이를 이용한 폴리머 제거방법
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
US7879783B2 (en) * 2007-01-11 2011-02-01 Air Products And Chemicals, Inc. Cleaning composition for semiconductor substrates
EP2175480A4 (de) 2007-07-19 2012-12-19 Mitsubishi Chem Corp Gruppe iii-nitrid-halbleitersubstrat und verfahren zu seiner reinigung
TW200927998A (en) * 2007-09-06 2009-07-01 Ekc Technology Inc Compositions and method for treating a copper surface
JP2011503899A (ja) * 2007-11-16 2011-01-27 イー．ケー．シー．テクノロジー．インコーポレーテッド 半導体基板から金属ハードマスクエッチング残留物を除去するための組成物
US8101525B2 (en) * 2009-02-13 2012-01-24 Applied Materials, Inc. Method for fabricating a semiconductor device having a lanthanum-family-based oxide layer
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US8951950B2 (en) * 2012-03-12 2015-02-10 Ekc Technology Aluminum post-etch residue removal with simultaneous surface passivation
EP3480288A1 (de) * 2017-11-07 2019-05-08 Henkel AG & Co. KGaA Reinigungszusammensetzung auf fluoridbasis
KR102891758B1 (ko) * 2019-07-04 2025-12-01 주식회사 이엔에프테크놀로지 금속 잔사 제거용 세정제 조성물 및 이를 이용한 반도체 소자의 제조방법

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Also Published As

Publication number Publication date
EP1212150B1 (de) 2009-01-28
DE60041497D1 (de) 2009-03-19
WO2001005524A1 (en) 2001-01-25
AU6348600A (en) 2001-02-05
US6235693B1 (en) 2001-05-22
TW200521222A (en) 2005-07-01
EP1212150A4 (de) 2003-04-02
EP1212150A1 (de) 2002-06-12
HK1047063A1 (zh) 2003-02-07
JP2003507901A (ja) 2003-02-25
KR20020031159A (ko) 2002-04-26
TWI233942B (en) 2005-06-11
TWI283705B (en) 2007-07-11

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