ATE422094T1 - Auffrischen von speicherzellen eines phasenwechselmaterialspeicherbausteins - Google Patents

Auffrischen von speicherzellen eines phasenwechselmaterialspeicherbausteins

Info

Publication number
ATE422094T1
ATE422094T1 AT03734480T AT03734480T ATE422094T1 AT E422094 T1 ATE422094 T1 AT E422094T1 AT 03734480 T AT03734480 T AT 03734480T AT 03734480 T AT03734480 T AT 03734480T AT E422094 T1 ATE422094 T1 AT E422094T1
Authority
AT
Austria
Prior art keywords
phase change
change material
refreshing
memory cells
memory component
Prior art date
Application number
AT03734480T
Other languages
English (en)
Inventor
Ward Parkinson
Tyler Lowrey
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE422094T1 publication Critical patent/ATE422094T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0076—Write operation performed depending on read result
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
AT03734480T 2002-08-05 2003-06-09 Auffrischen von speicherzellen eines phasenwechselmaterialspeicherbausteins ATE422094T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/212,630 US6768665B2 (en) 2002-08-05 2002-08-05 Refreshing memory cells of a phase change material memory device

Publications (1)

Publication Number Publication Date
ATE422094T1 true ATE422094T1 (de) 2009-02-15

Family

ID=31187813

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03734480T ATE422094T1 (de) 2002-08-05 2003-06-09 Auffrischen von speicherzellen eines phasenwechselmaterialspeicherbausteins

Country Status (10)

Country Link
US (1) US6768665B2 (de)
EP (1) EP1527456B1 (de)
KR (1) KR100545032B1 (de)
CN (1) CN1487529B (de)
AT (1) ATE422094T1 (de)
AU (1) AU2003238958A1 (de)
DE (2) DE60326046D1 (de)
SG (2) SG135045A1 (de)
TW (1) TWI261752B (de)
WO (1) WO2004013862A2 (de)

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US20040022085A1 (en) 2004-02-05
WO2004013862A2 (en) 2004-02-12
CN1487529A (zh) 2004-04-07
WO2004013862A3 (en) 2004-03-18
KR100545032B1 (ko) 2006-01-24
DE60326046D1 (de) 2009-03-19
EP1527456B1 (de) 2009-01-28
KR20040014198A (ko) 2004-02-14
US6768665B2 (en) 2004-07-27
SG113466A1 (en) 2005-08-29
DE10331627A1 (de) 2005-04-28
CN1487529B (zh) 2012-12-05
AU2003238958A1 (en) 2004-02-23
EP1527456A2 (de) 2005-05-04
TW200408943A (en) 2004-06-01
TWI261752B (en) 2006-09-11
SG135045A1 (en) 2007-09-28
AU2003238958A8 (en) 2004-02-23

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