ATE426695T1 - Verfahren zur eliminierung von defekten in kristallen - Google Patents
Verfahren zur eliminierung von defekten in kristallenInfo
- Publication number
- ATE426695T1 ATE426695T1 AT03254007T AT03254007T ATE426695T1 AT E426695 T1 ATE426695 T1 AT E426695T1 AT 03254007 T AT03254007 T AT 03254007T AT 03254007 T AT03254007 T AT 03254007T AT E426695 T1 ATE426695 T1 AT E426695T1
- Authority
- AT
- Austria
- Prior art keywords
- crystal
- high pressure
- crystals
- defects
- eliminating defects
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 2
- 230000007547 defect Effects 0.000 abstract 3
- 229910003460 diamond Inorganic materials 0.000 abstract 1
- 239000010432 diamond Substances 0.000 abstract 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/065—Presses for the formation of diamonds or boronitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/063—Carbides
- B01J2203/0635—Silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/0645—Boronitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/066—Boronitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0665—Gallium nitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/067—Aluminium nitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/069—Recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US39274102P | 2002-06-27 | 2002-06-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE426695T1 true ATE426695T1 (de) | 2009-04-15 |
Family
ID=29720445
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03254007T ATE426695T1 (de) | 2002-06-27 | 2003-06-25 | Verfahren zur eliminierung von defekten in kristallen |
| AT06013705T ATE549440T1 (de) | 2002-06-27 | 2003-06-25 | Verfahren zur verminderung von defektkonzentrationen in kristallen |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06013705T ATE549440T1 (de) | 2002-06-27 | 2003-06-25 | Verfahren zur verminderung von defektkonzentrationen in kristallen |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US7175704B2 (de) |
| EP (1) | EP1378591B1 (de) |
| JP (2) | JP4620940B2 (de) |
| KR (2) | KR100987831B1 (de) |
| CN (2) | CN1920124A (de) |
| AT (2) | ATE426695T1 (de) |
| DE (1) | DE60326792D1 (de) |
| ZA (1) | ZA200304563B (de) |
Families Citing this family (128)
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| US6814801B2 (en) | 2002-06-24 | 2004-11-09 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
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| US7175704B2 (en) * | 2002-06-27 | 2007-02-13 | Diamond Innovations, Inc. | Method for reducing defect concentrations in crystals |
| EP2253746B1 (de) * | 2002-09-06 | 2015-07-22 | Element Six Technologies Limited | Gefärbter diamant |
| US7018909B2 (en) | 2003-02-28 | 2006-03-28 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Forming structures that include a relaxed or pseudo-relaxed layer on a substrate |
| EP1734158B1 (de) * | 2004-03-31 | 2012-01-04 | NGK Insulators, Ltd. | Verfahren zum ziehen von galliumnitrid-einkristallen |
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| CN1304629C (zh) * | 2004-08-20 | 2007-03-14 | 南京大学 | 制备纳米带和星形纳米材料的方法 |
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| JPH06305900A (ja) | 1993-04-23 | 1994-11-01 | Japan Energy Corp | 化合物半導体の熱処理方法 |
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| US6013591A (en) * | 1997-01-16 | 2000-01-11 | Massachusetts Institute Of Technology | Nanocrystalline apatites and composites, prostheses incorporating them, and method for their production |
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| US6214108B1 (en) * | 1998-05-19 | 2001-04-10 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same |
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| JP3899725B2 (ja) * | 1998-09-30 | 2007-03-28 | 株式会社Sumco | 単結晶体の欠陥除去方法 |
| JP2001158696A (ja) | 1999-11-29 | 2001-06-12 | Toyota Central Res & Dev Lab Inc | 炭化珪素単結晶の製造方法 |
| KR100812112B1 (ko) | 2000-08-11 | 2008-03-12 | 벨라타이레 인터내셔날 엘엘씨. | 다이아몬드의 고압 및 고온 제조방법 |
| JP4716558B2 (ja) * | 2000-12-12 | 2011-07-06 | 株式会社デンソー | 炭化珪素基板 |
| US7175704B2 (en) * | 2002-06-27 | 2007-02-13 | Diamond Innovations, Inc. | Method for reducing defect concentrations in crystals |
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- 2003-06-11 ZA ZA200304563A patent/ZA200304563B/xx unknown
- 2003-06-25 AT AT03254007T patent/ATE426695T1/de not_active IP Right Cessation
- 2003-06-25 DE DE60326792T patent/DE60326792D1/de not_active Expired - Lifetime
- 2003-06-25 EP EP03254007A patent/EP1378591B1/de not_active Expired - Lifetime
- 2003-06-25 AT AT06013705T patent/ATE549440T1/de active
- 2003-06-25 KR KR1020030041418A patent/KR100987831B1/ko not_active Expired - Fee Related
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| CN1480569A (zh) | 2004-03-10 |
| EP1378591B1 (de) | 2009-03-25 |
| ATE549440T1 (de) | 2012-03-15 |
| KR20060092180A (ko) | 2006-08-22 |
| EP1378591A1 (de) | 2004-01-07 |
| KR20040002684A (ko) | 2004-01-07 |
| US20040000266A1 (en) | 2004-01-01 |
| CN1920124A (zh) | 2007-02-28 |
| DE60326792D1 (de) | 2009-05-07 |
| US8216370B2 (en) | 2012-07-10 |
| KR100987831B1 (ko) | 2010-10-13 |
| CN100342065C (zh) | 2007-10-10 |
| US20060096521A1 (en) | 2006-05-11 |
| ZA200304563B (en) | 2004-04-29 |
| JP2007015918A (ja) | 2007-01-25 |
| US7175704B2 (en) | 2007-02-13 |
| JP2004161604A (ja) | 2004-06-10 |
| JP4620940B2 (ja) | 2011-01-26 |
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