ATE426695T1 - Verfahren zur eliminierung von defekten in kristallen - Google Patents

Verfahren zur eliminierung von defekten in kristallen

Info

Publication number
ATE426695T1
ATE426695T1 AT03254007T AT03254007T ATE426695T1 AT E426695 T1 ATE426695 T1 AT E426695T1 AT 03254007 T AT03254007 T AT 03254007T AT 03254007 T AT03254007 T AT 03254007T AT E426695 T1 ATE426695 T1 AT E426695T1
Authority
AT
Austria
Prior art keywords
crystal
high pressure
crystals
defects
eliminating defects
Prior art date
Application number
AT03254007T
Other languages
English (en)
Inventor
Evelyn Mark Philip D
Larry Burton Rowland
John William Lucek
Suresh Shankarappa Vagaralli
Thomas Richard Anthony
Lionel Monty Levinson
Stephen Daley Arthur
Original Assignee
Diamond Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Diamond Innovations Inc filed Critical Diamond Innovations Inc
Application granted granted Critical
Publication of ATE426695T1 publication Critical patent/ATE426695T1/de

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/065Presses for the formation of diamonds or boronitrides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/0605Composition of the material to be processed
    • B01J2203/063Carbides
    • B01J2203/0635Silicon carbide
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/0605Composition of the material to be processed
    • B01J2203/0645Boronitrides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/065Composition of the material produced
    • B01J2203/066Boronitrides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/065Composition of the material produced
    • B01J2203/0665Gallium nitrides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/065Composition of the material produced
    • B01J2203/067Aluminium nitrides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/0675Structural or physico-chemical features of the materials processed
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/0675Structural or physico-chemical features of the materials processed
    • B01J2203/069Recrystallisation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1004Apparatus with means for measuring, testing, or sensing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1004Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Lasers (AREA)
AT03254007T 2002-06-27 2003-06-25 Verfahren zur eliminierung von defekten in kristallen ATE426695T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US39274102P 2002-06-27 2002-06-27

Publications (1)

Publication Number Publication Date
ATE426695T1 true ATE426695T1 (de) 2009-04-15

Family

ID=29720445

Family Applications (2)

Application Number Title Priority Date Filing Date
AT03254007T ATE426695T1 (de) 2002-06-27 2003-06-25 Verfahren zur eliminierung von defekten in kristallen
AT06013705T ATE549440T1 (de) 2002-06-27 2003-06-25 Verfahren zur verminderung von defektkonzentrationen in kristallen

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT06013705T ATE549440T1 (de) 2002-06-27 2003-06-25 Verfahren zur verminderung von defektkonzentrationen in kristallen

Country Status (8)

Country Link
US (2) US7175704B2 (de)
EP (1) EP1378591B1 (de)
JP (2) JP4620940B2 (de)
KR (2) KR100987831B1 (de)
CN (2) CN1920124A (de)
AT (2) ATE426695T1 (de)
DE (1) DE60326792D1 (de)
ZA (1) ZA200304563B (de)

Families Citing this family (128)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2828214B1 (fr) * 2001-08-06 2003-12-12 Centre Nat Rech Scient PROCEDE D'OBTENTION D'UN MONOCRISTAL DE CdTd OU DE CdZnTe, ET MONOCRISTAL OBTENU PAR CE PROCEDE
US6814801B2 (en) 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US7601441B2 (en) 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7175704B2 (en) * 2002-06-27 2007-02-13 Diamond Innovations, Inc. Method for reducing defect concentrations in crystals
EP2253746B1 (de) * 2002-09-06 2015-07-22 Element Six Technologies Limited Gefärbter diamant
US7018909B2 (en) 2003-02-28 2006-03-28 S.O.I.Tec Silicon On Insulator Technologies S.A. Forming structures that include a relaxed or pseudo-relaxed layer on a substrate
EP1734158B1 (de) * 2004-03-31 2012-01-04 NGK Insulators, Ltd. Verfahren zum ziehen von galliumnitrid-einkristallen
US7348076B2 (en) 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
CN1304629C (zh) * 2004-08-20 2007-03-14 南京大学 制备纳米带和星形纳米材料的方法
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
JP4925463B2 (ja) * 2005-02-16 2012-04-25 日本碍子株式会社 六方晶窒化ホウ素単結晶の製造方法
US7316746B2 (en) * 2005-03-18 2008-01-08 General Electric Company Crystals for a semiconductor radiation detector and method for making the crystals
CN100539210C (zh) * 2006-10-27 2009-09-09 中国科学院物理研究所 一种具有全波长的光探测器及其制备方法
CN100536173C (zh) * 2006-10-27 2009-09-02 中国科学院物理研究所 一种从深紫外至远红外光的探测器及制备方法
KR101356374B1 (ko) * 2006-10-31 2014-01-27 미츠비시 마테리알 가부시키가이샤 양도전성 다이아몬드 소결체 및 그 제조 방법
US8458262B2 (en) * 2006-12-22 2013-06-04 At&T Mobility Ii Llc Filtering spam messages across a communication network
US20080191138A1 (en) * 2007-02-08 2008-08-14 Alexander Kastalsky High-energy radiation scintillation detector comprising multiple semiconductor slabs
JP2009256159A (ja) * 2008-04-14 2009-11-05 Incubation Alliance Inc 結晶炭化珪素基板の製造方法
US8871024B2 (en) 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20090301388A1 (en) * 2008-06-05 2009-12-10 Soraa Inc. Capsule for high pressure processing and method of use for supercritical fluids
US8303710B2 (en) * 2008-06-18 2012-11-06 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20090320745A1 (en) * 2008-06-25 2009-12-31 Soraa, Inc. Heater device and method for high pressure processing of crystalline materials
US20100006873A1 (en) * 2008-06-25 2010-01-14 Soraa, Inc. HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
WO2011044554A1 (en) 2009-10-09 2011-04-14 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US20100003492A1 (en) * 2008-07-07 2010-01-07 Soraa, Inc. High quality large area bulk non-polar or semipolar gallium based substrates and methods
US9404197B2 (en) 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
US8124996B2 (en) * 2008-08-04 2012-02-28 Soraa, Inc. White light devices using non-polar or semipolar gallium containing materials and phosphors
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
EP2151852B1 (de) 2008-08-06 2020-01-15 Soitec Relaxation und Übertragung von Spannungsschichten
EP2151856A1 (de) 2008-08-06 2010-02-10 S.O.I. TEC Silicon Relaxation von Spannungsschichten
TWI457984B (zh) 2008-08-06 2014-10-21 S O I Tec絕緣層上矽科技公司 應變層的鬆弛方法
US8323405B2 (en) * 2008-08-07 2012-12-04 Soraa, Inc. Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
US8430958B2 (en) * 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US8021481B2 (en) 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8979999B2 (en) * 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8148801B2 (en) 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
EP2159836B1 (de) 2008-08-25 2017-05-31 Soitec Versteifungsschichten zur Relaxation von verspannten Schichten
US7976630B2 (en) 2008-09-11 2011-07-12 Soraa, Inc. Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
US20100295088A1 (en) * 2008-10-02 2010-11-25 Soraa, Inc. Textured-surface light emitting diode and method of manufacture
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US8878230B2 (en) * 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
US8461071B2 (en) * 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
US9589792B2 (en) 2012-11-26 2017-03-07 Soraa, Inc. High quality group-III metal nitride crystals, methods of making, and methods of use
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US20110100291A1 (en) * 2009-01-29 2011-05-05 Soraa, Inc. Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8306081B1 (en) 2009-05-27 2012-11-06 Soraa, Inc. High indium containing InGaN substrates for long wavelength optical devices
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US8377806B2 (en) * 2010-04-28 2013-02-19 Cree, Inc. Method for controlled growth of silicon carbide and structures produced by same
US8451876B1 (en) 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
GB201105957D0 (en) * 2011-04-08 2011-05-18 Element Six Ltd Containment element
US8399367B2 (en) * 2011-06-28 2013-03-19 Nitride Solutions, Inc. Process for high-pressure nitrogen annealing of metal nitrides
US8492185B1 (en) 2011-07-14 2013-07-23 Soraa, Inc. Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
TW201310537A (zh) * 2011-08-30 2013-03-01 錸鑽科技股份有限公司 降低磊晶薄膜之缺陷的退火方法及以該方法得到的磊晶薄膜
US9694158B2 (en) 2011-10-21 2017-07-04 Ahmad Mohamad Slim Torque for incrementally advancing a catheter during right heart catheterization
US10029955B1 (en) 2011-10-24 2018-07-24 Slt Technologies, Inc. Capsule for high pressure, high temperature processing of materials and methods of use
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
CN103361735B (zh) * 2012-03-26 2017-07-28 北京通美晶体技术有限公司 一种iiia‑va族半导体单晶衬底及其制备方法
US10145026B2 (en) 2012-06-04 2018-12-04 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
CN102709398A (zh) * 2012-06-20 2012-10-03 山东大学 一种碲化锌/砷化镓异质外延层的制备方法
US9275912B1 (en) 2012-08-30 2016-03-01 Soraa, Inc. Method for quantification of extended defects in gallium-containing nitride crystals
CN102832304B (zh) * 2012-09-20 2015-05-13 江苏威纳德照明科技有限公司 一种GaN基半导体发光二极管的制造方法
US9299555B1 (en) 2012-09-28 2016-03-29 Soraa, Inc. Ultrapure mineralizers and methods for nitride crystal growth
CN103073303B (zh) * 2012-12-26 2014-02-19 哈尔滨理工大学 一种低晶化温度下制备高度(100)取向无铅压电薄膜的方法
WO2014121187A2 (en) 2013-02-01 2014-08-07 First Solar, Inc. Photovoltaic device including a p-n junction and method of manufacturing
US11876140B2 (en) 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
CN103341340B (zh) * 2013-06-25 2015-12-23 河南飞孟金刚石工业有限公司 一种叶腊石配方的生产工艺
CN103590112B (zh) * 2013-11-18 2016-03-30 北京雷生强式科技有限责任公司 一种掺铁硒化锌激光晶体的后处理方法
US20150206765A1 (en) * 2014-01-17 2015-07-23 Sandia Corporation Mechanical Compression-Based Method for the Reduction of Defects in Semiconductors
CN103746049A (zh) * 2014-01-26 2014-04-23 南通明芯微电子有限公司 一种P型GaAs基半导体发光二极管的制造方法
WO2015133443A1 (ja) * 2014-03-03 2015-09-11 国立大学法人大阪大学 Iii族窒化物結晶の製造方法およびiii族窒化物結晶製造装置
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
JP6451563B2 (ja) * 2015-09-08 2019-01-16 株式会社豊田中央研究所 窒化ガリウム結晶及びその製造方法、並びに、結晶成長装置
CN105696081B (zh) * 2016-03-23 2018-03-30 西北工业大学 锑化铝材料的制备方法
CN105833799A (zh) * 2016-05-11 2016-08-10 河南工业大学 一种利用铰链式六面顶压机实现液体高温高压反应的装置
US10979191B2 (en) * 2016-08-05 2021-04-13 Samsung Electronics Co., Ltd. Method and apparatus for reference signal signaling for advanced wireless communications
TWI674629B (zh) * 2017-01-12 2019-10-11 國立中山大學 以超臨界流體處理電子元件之方法
US11101141B2 (en) 2017-01-12 2021-08-24 National Sun Yat-Sen University Kz Method for reducing defects of electronic components by a supercritical fluid
US10174438B2 (en) 2017-03-30 2019-01-08 Slt Technologies, Inc. Apparatus for high pressure reaction
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure
CN111557082B (zh) * 2018-01-07 2023-06-23 Lg电子株式会社 无线通信系统中终端基站间pt-rs的收发方法和装置
CN108148596B (zh) * 2018-01-15 2021-06-29 天津科技大学 一种利用上转换荧光材料荧光熄灭鉴别红葡萄酒的方法
CN108452326B (zh) * 2018-04-08 2020-10-16 中国科学院高能物理研究所 一种具有核壳结构的纳米颗粒、制备方法及用途
US11088049B2 (en) 2018-10-23 2021-08-10 Nlight Inc. Heat sink formed from a high pipe density silicon carbide substrate
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
US12152742B2 (en) 2019-01-18 2024-11-26 Kyocera Sld Laser, Inc. Laser-based light guide-coupled wide-spectrum light system
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
JP7218708B2 (ja) * 2019-10-29 2023-02-07 株式会社Sumco 点欠陥シミュレーター、点欠陥シミュレーションプログラム、点欠陥シミュレーション方法、シリコン単結晶の製造方法および単結晶引き上げ装置
CN110981409A (zh) * 2020-01-20 2020-04-10 成都新柯力化工科技有限公司 一种低热辐射的二氧化硅气凝胶及其制备方法
EP4104201A1 (de) 2020-02-11 2022-12-21 SLT Technologies, Inc. Verbessertes gruppe-iii-nitrid-substrat, verfahren zu seiner herstellung und verwendungsverfahren
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
WO2022015780A1 (en) * 2020-07-14 2022-01-20 Schlumberger Technology Corporation Luminescent diamond
CN111948235B (zh) * 2020-08-07 2022-09-20 广西大学 测量半极性面ⅲ族氮化物薄膜缺陷密度的方法及其应用
JP7483669B2 (ja) 2020-11-02 2024-05-15 エスエルティー テクノロジーズ インコーポレイテッド 窒化物結晶成長のための超高純度鉱化剤及び改良された方法
CN112420511A (zh) * 2020-11-23 2021-02-26 陕西科技大学 一种GaAs衬底的退火处理方法
CN113437187B (zh) * 2021-08-26 2022-01-25 北京大学深圳研究生院 一种发光二极管超临界处理方法
CN113694830A (zh) * 2021-09-07 2021-11-26 南方科技大学 一种氮掺杂金刚石及其合成方法
CN114456627B (zh) * 2021-12-14 2022-11-15 深圳大学 一种水泥基自清洁涂料及其制备方法
CN114524417B (zh) * 2022-03-07 2023-07-28 先导薄膜材料(广东)有限公司 一种高收率碲化铅的制备方法
CN114744062B (zh) * 2022-03-29 2024-02-13 黄淮学院 基于二维材料InSe/GaAs异质结的三维沟槽硅电极探测器
CN117265669A (zh) * 2022-06-14 2023-12-22 宁波杭州湾新材料研究院 金刚石及其制造方法、应用、太赫兹源
CN115201241A (zh) * 2022-07-18 2022-10-18 吉林大学 一种利用高压技术调控SnBi2Te4中Sn原子缺陷的方法
CN115180650B (zh) * 2022-08-09 2023-08-29 天津大学浙江绍兴研究院 二硫化钼纳米片组装的二硫化钼纳米棒及制备方法和用途
CN115928210A (zh) * 2022-11-09 2023-04-07 福建北电新材料科技有限公司 金刚石的制备方法
CN116282057B (zh) * 2022-12-06 2024-06-11 中国科学院新疆理化技术研究所 化合物钠锶硼硫和钠锶硼硫中远红外非线性光学晶体及制备方法和应用
CN116493025B (zh) * 2023-04-12 2024-11-22 常州大学 一种Ⅱ型异质结ReS2/CdIn2S4复合催化剂的制备方法以及光催化产氢的应用
CN118329947B (zh) * 2024-02-27 2024-10-01 中国科学院近代物理研究所 一种晶体空位缺陷类型识别方法及装置
CN120394043B (zh) * 2025-05-28 2026-04-17 辽宁工业大学 一种具有S型能带结构的核壳纳米花BaTiO3/In2S3异质结及其制备方法和应用
CN121517211B (zh) * 2026-01-15 2026-05-12 太原理工大学 一种铌酸锂微晶粉体的制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2737191B2 (ja) 1987-12-28 1998-04-08 東ソー株式会社 均質な石英ガラス塊の製造方法
SU1682416A1 (ru) 1989-07-24 1991-10-07 Научно-исследовательский институт материаловедения им.А.Ю.Малинина Способ термообработки монокристаллов фосфида галли
JPH06305900A (ja) 1993-04-23 1994-11-01 Japan Energy Corp 化合物半導体の熱処理方法
US5679153A (en) * 1994-11-30 1997-10-21 Cree Research, Inc. Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
JP3876473B2 (ja) * 1996-06-04 2007-01-31 住友電気工業株式会社 窒化物単結晶及びその製造方法
JP3988211B2 (ja) 1996-06-18 2007-10-10 東ソー株式会社 高純度透明シリカガラスの製造方法
US6013591A (en) * 1997-01-16 2000-01-11 Massachusetts Institute Of Technology Nanocrystalline apatites and composites, prostheses incorporating them, and method for their production
US6562130B2 (en) * 1997-01-22 2003-05-13 The Fox Group, Inc. Low defect axially grown single crystal silicon carbide
JP3003027B2 (ja) * 1997-06-25 2000-01-24 日本ピラー工業株式会社 単結晶SiCおよびその製造方法
US6214108B1 (en) * 1998-05-19 2001-04-10 Kabushiki Kaisha Toyota Chuo Kenkyusho Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same
JP4103184B2 (ja) 1998-07-17 2008-06-18 株式会社デンソー 炭化珪素単結晶の製造方法
JP3899725B2 (ja) * 1998-09-30 2007-03-28 株式会社Sumco 単結晶体の欠陥除去方法
JP2001158696A (ja) 1999-11-29 2001-06-12 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶の製造方法
KR100812112B1 (ko) 2000-08-11 2008-03-12 벨라타이레 인터내셔날 엘엘씨. 다이아몬드의 고압 및 고온 제조방법
JP4716558B2 (ja) * 2000-12-12 2011-07-06 株式会社デンソー 炭化珪素基板
US7175704B2 (en) * 2002-06-27 2007-02-13 Diamond Innovations, Inc. Method for reducing defect concentrations in crystals

Also Published As

Publication number Publication date
CN1480569A (zh) 2004-03-10
EP1378591B1 (de) 2009-03-25
ATE549440T1 (de) 2012-03-15
KR20060092180A (ko) 2006-08-22
EP1378591A1 (de) 2004-01-07
KR20040002684A (ko) 2004-01-07
US20040000266A1 (en) 2004-01-01
CN1920124A (zh) 2007-02-28
DE60326792D1 (de) 2009-05-07
US8216370B2 (en) 2012-07-10
KR100987831B1 (ko) 2010-10-13
CN100342065C (zh) 2007-10-10
US20060096521A1 (en) 2006-05-11
ZA200304563B (en) 2004-04-29
JP2007015918A (ja) 2007-01-25
US7175704B2 (en) 2007-02-13
JP2004161604A (ja) 2004-06-10
JP4620940B2 (ja) 2011-01-26

Similar Documents

Publication Publication Date Title
DE60326792D1 (de) Verfahren zur Eliminierung von Defekten in Kristallen
DK0613288T3 (da) Billedbehandlingsapparat, billeddannelsesapparat og fremgangsmåde til billedbehandling
ATE426916T1 (de) Verfahren zur herstellung von halb-isolierenden hochreinen siliciumcarbid-kristallen
SG148015A1 (en) Lithographic apparatus and device manufacturing method
BR0214084A (pt) Dispositivo e processo para separação de purificação de cristais de sua suspensão no banho cristalino impuro, uso de um dispositivo
DE60125993D1 (de) Optisches Aufzeichnungsmedium, Verfahren zu dessen Herstellung und Verfahren und Vorrichtung zum Aufzeichnen auf oder Lesen von diesem Medium
DK1597564T3 (da) Fremgangsmåde og system til undersögelse af emballager
DK0906333T3 (da) Substrater og inhibitorer for proteolytiske enzymer
EP1873588A3 (de) Abbildungselement mit photolumineszentem Etikett, diesen Abbildungselement beinhaltende Vorrichtung und Prozess zur Erzeugung eines Aufzeichnnungselements
MXPA03006017A (es) Metodos y aparatos de remocion de pelicula adhesiva.
ATE394896T1 (de) Verfahren zum betrieb eines hörhilfegerätes oder hörgerätesystem sowie hörhilfegerät oder hörgerätesystem
WO2004105581A3 (en) Removable cartridge for a microdermabrasion unit
BR0306737A (pt) Uso de um agente deionizante lìquido, processo para deionização de um meio de resfriamento de uma célula de combustìvel, e, aparelho de célula de combustìvel
NO20040918L (no) Fremgangsmate og anordning for lagdelt modulasjon.
BR0314384A (pt) Processo a aparelho para separar diluente de sólidos poliméricos
ATE373229T1 (de) Verfahren zur feststellung ob ein natürlicher diamant unter hohem druck und bei hoher temperatur behandelt worden ist
NO20053262D0 (no) Anordning og fremgangsmate for hoyttrykks vannjet overflateskjaering.
DE602004014110D1 (de) Bildlöschverfahren, vorrichtung dafür und recyclingverfahren für aufzeichnungsmedium
DE60331102D1 (de) Hochdruckverfahren
TW200715066A (en) Lithographic method
ATE300501T1 (de) Verfahren zur entfernung von verunreinigungen in harnstoffhydrolysereaktoren
WO2003034649A3 (de) Verfahren und vorrichtung zum absichern einer berechnung in einem kryptographischen algorithmus
ATE440347T1 (de) Verfahren und vorrichtung zur bildverarbeitung in einer in der hand gehaltenen einrichtung
ATE323173T1 (de) Nährboden zum nachweis und/oder zur unterscheidung von enterokokken
ATE389450T1 (de) Verfahren und vorrichtung zum behandeln und zum bedrucken von substraten

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties