ATE426916T1 - Verfahren zur herstellung von halb-isolierenden hochreinen siliciumcarbid-kristallen - Google Patents

Verfahren zur herstellung von halb-isolierenden hochreinen siliciumcarbid-kristallen

Info

Publication number
ATE426916T1
ATE426916T1 AT03736939T AT03736939T ATE426916T1 AT E426916 T1 ATE426916 T1 AT E426916T1 AT 03736939 T AT03736939 T AT 03736939T AT 03736939 T AT03736939 T AT 03736939T AT E426916 T1 ATE426916 T1 AT E426916T1
Authority
AT
Austria
Prior art keywords
silicon carbide
crystal
carbide crystals
point defects
purity silicon
Prior art date
Application number
AT03736939T
Other languages
English (en)
Inventor
Jason Jenny
David Malta
Hudson Hobgood
Stephan Mueller
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE426916T1 publication Critical patent/ATE426916T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Ceramic Products (AREA)
AT03736939T 2002-06-24 2003-06-10 Verfahren zur herstellung von halb-isolierenden hochreinen siliciumcarbid-kristallen ATE426916T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/064,232 US6814801B2 (en) 2002-06-24 2002-06-24 Method for producing semi-insulating resistivity in high purity silicon carbide crystals

Publications (1)

Publication Number Publication Date
ATE426916T1 true ATE426916T1 (de) 2009-04-15

Family

ID=29731606

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03736939T ATE426916T1 (de) 2002-06-24 2003-06-10 Verfahren zur herstellung von halb-isolierenden hochreinen siliciumcarbid-kristallen

Country Status (11)

Country Link
US (3) US6814801B2 (de)
EP (1) EP1516361B1 (de)
JP (1) JP4670006B2 (de)
KR (1) KR101024328B1 (de)
CN (1) CN100356524C (de)
AT (1) ATE426916T1 (de)
AU (1) AU2003237489A1 (de)
CA (1) CA2485594A1 (de)
DE (1) DE60326843D1 (de)
TW (1) TWI285404B (de)
WO (1) WO2004001836A1 (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7316747B2 (en) * 2002-06-24 2008-01-08 Cree, Inc. Seeded single crystal silicon carbide growth and resulting crystals
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US6814801B2 (en) * 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
SE525574C2 (sv) * 2002-08-30 2005-03-15 Okmetic Oyj Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter
US6974720B2 (en) * 2003-10-16 2005-12-13 Cree, Inc. Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
US7055807B2 (en) * 2004-06-25 2006-06-06 Pool Cover Corporation Expandable pole socket with twist and lock insert
US7192482B2 (en) * 2004-08-10 2007-03-20 Cree, Inc. Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
JP4470690B2 (ja) * 2004-10-29 2010-06-02 住友電気工業株式会社 炭化珪素単結晶、炭化珪素基板および炭化珪素単結晶の製造方法
US7563321B2 (en) * 2004-12-08 2009-07-21 Cree, Inc. Process for producing high quality large size silicon carbide crystals
US7811943B2 (en) * 2004-12-22 2010-10-12 Cree, Inc. Process for producing silicon carbide crystals having increased minority carrier lifetimes
WO2006070480A1 (ja) * 2004-12-27 2006-07-06 Nippon Steel Corporation 炭化珪素単結晶、炭化珪素単結晶ウェハ及びその製造方法
US7772601B2 (en) * 2005-02-04 2010-08-10 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and method of fabricating the same
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
US20060267043A1 (en) 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US7404858B2 (en) * 2005-09-16 2008-07-29 Mississippi State University Method for epitaxial growth of silicon carbide
KR100775983B1 (ko) * 2005-09-29 2007-11-15 네오세미테크 주식회사 반절연 탄화규소 단결정 성장방법
US8858709B1 (en) 2006-04-11 2014-10-14 Ii-Vi Incorporated Silicon carbide with low nitrogen content and method for preparation
US8361227B2 (en) * 2006-09-26 2013-01-29 Ii-Vi Incorporated Silicon carbide single crystals with low boron content
CN101536168A (zh) * 2006-09-14 2009-09-16 科锐有限公司 无微管碳化硅及其相关制备方法
KR100765240B1 (ko) * 2006-09-30 2007-10-09 서울옵토디바이스주식회사 서로 다른 크기의 발광셀을 가지는 발광 다이오드 패키지및 이를 채용한 발광 소자
CN101724893B (zh) * 2009-11-18 2013-09-04 中国科学院物理研究所 一种制备高纯半绝缘碳化硅晶体的方法
US8377806B2 (en) * 2010-04-28 2013-02-19 Cree, Inc. Method for controlled growth of silicon carbide and structures produced by same
JP2011243640A (ja) * 2010-05-14 2011-12-01 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置
KR101905823B1 (ko) 2011-07-27 2018-10-08 엘지이노텍 주식회사 웨이퍼 제조 장치 및 웨이퍼 제조 방법
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
JP6107450B2 (ja) * 2013-06-12 2017-04-05 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US9245944B2 (en) * 2013-07-02 2016-01-26 Infineon Technologies Ag Silicon carbide device and a method for manufacturing a silicon carbide device
KR101537385B1 (ko) * 2013-12-05 2015-07-17 재단법인 포항산업과학연구원 탄화규소(SiC) 단결정 성장 방법
CN105821471B (zh) * 2016-05-10 2018-10-30 山东大学 一种低应力高纯半绝缘SiC单晶的制备方法
CN106757357B (zh) * 2017-01-10 2019-04-09 山东天岳先进材料科技有限公司 一种高纯半绝缘碳化硅衬底的制备方法
WO2018183585A1 (en) 2017-03-29 2018-10-04 Pallidus, Inc. Sic volumetric shapes and methods of forming boules
JP7239182B2 (ja) * 2018-10-16 2023-03-14 山▲東▼天岳先▲進▼科技股▲フン▼有限公司 高純度炭化ケイ素単結晶基板及びその製造方法、応用
CN109338463B (zh) * 2018-10-16 2020-08-11 山东天岳先进材料科技有限公司 一种高纯碳化硅单晶衬底
CN109280965B (zh) * 2018-10-16 2020-03-24 山东天岳先进材料科技有限公司 一种掺杂少量钒的高质量半绝缘碳化硅单晶及衬底
WO2020255343A1 (ja) 2019-06-20 2020-12-24 三菱電機株式会社 炭化ケイ素単結晶、半導体素子
TWI698397B (zh) 2019-11-11 2020-07-11 財團法人工業技術研究院 碳化矽粉體的純化方法
CN115279956A (zh) 2019-12-27 2022-11-01 沃孚半导体公司 大直径碳化硅晶片
CN113990752B (zh) * 2020-07-27 2025-08-19 环球晶圆股份有限公司 碳化硅材料的制备方法
US12125701B2 (en) 2020-12-15 2024-10-22 Wolfspeed, Inc. Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
CN113073392A (zh) * 2021-03-31 2021-07-06 哈尔滨科友半导体产业装备与技术研究院有限公司 一种减少晶体热应力的处理方法
US12024794B2 (en) 2021-06-17 2024-07-02 Wolfspeed, Inc. Reduced optical absorption for silicon carbide crystalline materials
KR102780049B1 (ko) * 2023-11-10 2025-03-12 한국세라믹기술원 화학기상증착법을 이용하여 제조된 세라믹 기물을 원료로 하여 승화법으로 제조된 단결정 및 그 제조방법

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6615060A (de) * 1966-10-25 1968-04-26
JPS6473000A (en) 1987-09-16 1989-03-17 Hitachi Metals Ltd Heat treatment of gallium arsenide single crystal
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
GB8816632D0 (en) * 1988-07-13 1988-08-17 Raychem Ltd Electrical device
US5119540A (en) * 1990-07-24 1992-06-09 Cree Research, Inc. Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
GB9206086D0 (en) 1992-03-20 1992-05-06 Philips Electronics Uk Ltd Manufacturing electronic devices comprising,e.g.tfts and mims
US5709745A (en) * 1993-01-25 1998-01-20 Ohio Aerospace Institute Compound semi-conductors and controlled doping thereof
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
US5679153A (en) * 1994-11-30 1997-10-21 Cree Research, Inc. Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
JPH08208380A (ja) 1995-01-25 1996-08-13 Nippon Steel Corp 単結晶炭化珪素の製造方法
DE59607635D1 (de) * 1995-08-16 2001-10-11 Siemens Ag KEIMKRISTALL ZUM HERSTELLEN VON EINKRISTALLEN, VERWENDUNG DES KEIMKRISTALLS UND VERFAHREN ZUM HERSTELLEN VON SiC-EINKRISTALLEN ODER EINKRISTALLINEN SiC-SCHICHTEN
JPH09110584A (ja) 1995-10-25 1997-04-28 Sanyo Electric Co Ltd 単結晶成長方法
US5718760A (en) * 1996-02-05 1998-02-17 Cree Research, Inc. Growth of colorless silicon carbide crystals
JP2001509768A (ja) * 1997-01-31 2001-07-24 ノースロップ グラマン コーポレーション 高出力マイクロ波装置用高抵抗炭化珪素基板
US5873937A (en) * 1997-05-05 1999-02-23 Northrop Grumman Corporation Method of growing 4H silicon carbide crystal
JP3003027B2 (ja) * 1997-06-25 2000-01-24 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
US6201342B1 (en) * 1997-06-30 2001-03-13 The United States Of America As Represented By The Secretary Of The Navy Automatically sharp field emission cathodes
JPH1160391A (ja) 1997-08-08 1999-03-02 Denso Corp 炭化珪素単結晶の製造方法
WO1999017345A1 (de) 1997-09-30 1999-04-08 Infineon Technologies Ag Verfahren zum thermischen ausheilen von durch implantation dotierten siliziumcarbid-halbleitern
JP3680531B2 (ja) 1997-12-11 2005-08-10 株式会社豊田中央研究所 種結晶固定剤及びそれを用いた単結晶の製造方法
JP4036531B2 (ja) * 1998-05-27 2008-01-23 富士通株式会社 半導体集積回路
DE59901313D1 (de) * 1998-07-13 2002-05-29 Siemens Ag VERFAHREN ZUR ZÜCHTUNG VON SiC-EINKRISTALLEN
US6086672A (en) * 1998-10-09 2000-07-11 Cree, Inc. Growth of bulk single crystals of aluminum nitride: silicon carbide alloys
US6218680B1 (en) * 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6396080B2 (en) * 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
EP1200651B1 (de) * 1999-07-07 2004-04-07 Siemens Aktiengesellschaft Keimkristallhalter mit seitlicher einfassung eines sic-keimkristalls
US6446180B2 (en) * 1999-07-19 2002-09-03 Micron Technology, Inc. Memory device with synchronized output path
US6824611B1 (en) * 1999-10-08 2004-11-30 Cree, Inc. Method and apparatus for growing silicon carbide crystals
US6451112B1 (en) * 1999-10-15 2002-09-17 Denso Corporation Method and apparatus for fabricating high quality single crystal
JP4258921B2 (ja) 1999-11-10 2009-04-30 株式会社豊田中央研究所 種結晶固定剤、種結晶固定方法およびそれらを用いた単結晶の製造方法
JP4253974B2 (ja) 1999-12-22 2009-04-15 住友電気工業株式会社 ＳｉＣ単結晶およびその成長方法
AU2001245270A1 (en) * 2000-02-15 2001-09-03 The Fox Group, Inc. Method and apparatus for growing low defect density silicon carbide and resulting material
JP3707726B2 (ja) 2000-05-31 2005-10-19 Ｈｏｙａ株式会社 炭化珪素の製造方法、複合材料の製造方法
JP3961750B2 (ja) 2000-08-21 2007-08-22 独立行政法人産業技術総合研究所 単結晶の成長装置および成長方法
JP4903946B2 (ja) * 2000-12-28 2012-03-28 株式会社ブリヂストン 炭化ケイ素単結晶の製造方法及び製造装置
JP4275308B2 (ja) * 2000-12-28 2009-06-10 株式会社デンソー 炭化珪素単結晶の製造方法およびその製造装置
JP4619567B2 (ja) 2001-04-10 2011-01-26 株式会社ブリヂストン 炭化ケイ素単結晶及びその製造方法
US6507046B2 (en) * 2001-05-11 2003-01-14 Cree, Inc. High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
JP4986342B2 (ja) 2001-06-15 2012-07-25 株式会社ブリヂストン 炭化ケイ素単結晶及びその製造方法
US20020189536A1 (en) * 2001-06-15 2002-12-19 Bridgestone Corporation Silicon carbide single crystal and production thereof
US6801989B2 (en) * 2001-06-28 2004-10-05 Micron Technology, Inc. Method and system for adjusting the timing offset between a clock signal and respective digital signals transmitted along with that clock signal, and memory device and computer system using same
KR100422572B1 (ko) 2001-06-30 2004-03-12 주식회사 하이닉스반도체 레지스터 제어 지연고정루프 및 그를 구비한 반도체 소자
JP4224755B2 (ja) 2001-10-16 2009-02-18 株式会社デンソー 種結晶の固定方法
JP2003137694A (ja) 2001-10-26 2003-05-14 Nippon Steel Corp 炭化珪素単結晶育成用種結晶と炭化珪素単結晶インゴット及びその製造方法
US6759911B2 (en) * 2001-11-19 2004-07-06 Mcron Technology, Inc. Delay-locked loop circuit and method using a ring oscillator and counter-based delay
JP4054197B2 (ja) 2002-02-05 2008-02-27 新日本製鐵株式会社 炭化珪素単結晶育成用種結晶及びその製造方法並びに炭化珪素単結晶インゴットの製造方法
US7147715B2 (en) * 2003-07-28 2006-12-12 Cree, Inc. Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
US7316747B2 (en) * 2002-06-24 2008-01-08 Cree, Inc. Seeded single crystal silicon carbide growth and resulting crystals
US7220313B2 (en) * 2003-07-28 2007-05-22 Cree, Inc. Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US6814801B2 (en) * 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US7175704B2 (en) 2002-06-27 2007-02-13 Diamond Innovations, Inc. Method for reducing defect concentrations in crystals
JP2004103061A (ja) 2002-09-05 2004-04-02 Renesas Technology Corp 半導体記憶装置
JP4434568B2 (ja) 2002-11-14 2010-03-17 株式会社ルネサステクノロジ 半導体記憶装置
US7115896B2 (en) * 2002-12-04 2006-10-03 Emcore Corporation Semiconductor structures for gallium nitride-based devices
US6964917B2 (en) * 2003-04-08 2005-11-15 Cree, Inc. Semi-insulating silicon carbide produced by Neutron transmutation doping
JP3764462B2 (ja) * 2003-04-10 2006-04-05 株式会社豊田中央研究所 炭化ケイ素単結晶の製造方法
US7023010B2 (en) * 2003-04-21 2006-04-04 Nanodynamics, Inc. Si/C superlattice useful for semiconductor devices
DE602004001802T3 (de) * 2003-04-24 2012-01-26 Norstel Ab Vorrichtung und Verfahren zur Herstellung von Einkristallen durch Dampfphasenabscheidung
US7314520B2 (en) 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US7300519B2 (en) * 2004-11-17 2007-11-27 Cree, Inc. Reduction of subsurface damage in the production of bulk SiC crystals

Also Published As

Publication number Publication date
US9059118B2 (en) 2015-06-16
KR101024328B1 (ko) 2011-03-23
JP4670006B2 (ja) 2011-04-13
WO2004001836A1 (en) 2003-12-31
US20030233975A1 (en) 2003-12-25
US20090256162A1 (en) 2009-10-15
EP1516361A1 (de) 2005-03-23
AU2003237489A1 (en) 2004-01-06
CN1663033A (zh) 2005-08-31
US6814801B2 (en) 2004-11-09
TW200409245A (en) 2004-06-01
JP2005531145A (ja) 2005-10-13
EP1516361B1 (de) 2009-03-25
DE60326843D1 (de) 2009-05-07
US20040206298A1 (en) 2004-10-21
CA2485594A1 (en) 2003-12-31
KR20050013113A (ko) 2005-02-02
TWI285404B (en) 2007-08-11
CN100356524C (zh) 2007-12-19

Similar Documents

Publication Publication Date Title
ATE426916T1 (de) Verfahren zur herstellung von halb-isolierenden hochreinen siliciumcarbid-kristallen
DE60335616D1 (de) Verfahren zur herstellung von siliciumeinkristallen, und dadurch hergestellte siliciumeinkristallwafer und siliciumeinkristallstab
ATE453000T1 (de) Züchten von ultrahochreinen siliciumcarbidkristallen in wasserstoffhaltiger umgebung
DE60125689D1 (de) Verfahren und Vorrichtung zur Herstellung von Siliziumkarbidkristallen unter Verwendung von Quellegasen
DE60326792D1 (de) Verfahren zur Eliminierung von Defekten in Kristallen
MY115099A (en) Process for producing silicon semiconductor wafers with low defect density
DE60105941D1 (de) Verfahren und Vorrichtung zur Herstellung von Siliziumkarbidkristallen unter Verwendung von Quellgasen
ATE460512T1 (de) Verfahren zur herstellung hochqualitativer, grossformatiger siliciumcarbidkristalle
DE60115435D1 (de) Dicke einkristalline diamantschicht, verfahren zur herstellung der schicht und edelsteine hergestellt durch bearbeitung der schicht
EP1659198A4 (de) Siliciumcarbideinkristall und verfahren und vorrichtung zu seiner herstellung
DE60142386D1 (de) Verfahren und Vorrichtung zur Herstellung eines III-V-Nitridfilms
ATE440376T1 (de) Verarbeitungssystem und verfahren zum thermischen behandeln eines substrats
ATE350519T1 (de) Tiegel für eine vorrichtung zur herstellung eines kristallinen blockes, und verfahren zu seiner herstellung
DE69906812T2 (de) Verfahren zum stapeln und schmelzen von polykristallinem silizium zur herstellung von hochqualitäts-einkristallen
TW200614378A (en) Nitrogen-doped silicon wafer and its manufacturing method
TW200704834A (en) Silicon wafer and manufacturing method for same
ATE509147T1 (de) Vorrichtung zum axial-gradient-transport und verfahren zur herstellung von grossformatigen siliziumkarbid-einkristallen
ATE437996T1 (de) Verfahren und system zur erwärmung von schienen und schienen zu dieser verwendung
WO2002010486A1 (fr) Procede pour detecter la derniere phase de fusion d'un silicium polycristallin, procede de reglage de la temperature de contact du cristal germe avec la matiere en fusion, et appareil de production d'un silicium monocristallin
EP4056739C0 (de) Verfahren zur züchtung von hochwertigem einkristallinem siliziumcarbid
ATE375236T2 (de) Verfahren zur herstellung von gehärteten produkten
DE60204272D1 (de) Verfahren zur Herstellung von Molybdäncarbid
DE60100110D1 (de) Verfahren zur thermischen Behandlung eines ZnSe-Kristallsubstrats, danach hergestelltes Substrat und lichtemittierende Vorrichtung
TW200508416A (en) Composition for forming silicon-aluminum film, silicon-aluminum film and method for forming the same
JPWO2005007943A1 (ja) フッ化物結晶の製造方法

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties