ATE426921T1 - Komplementar-mis-bauelement - Google Patents

Komplementar-mis-bauelement

Info

Publication number
ATE426921T1
ATE426921T1 AT02786074T AT02786074T ATE426921T1 AT E426921 T1 ATE426921 T1 AT E426921T1 AT 02786074 T AT02786074 T AT 02786074T AT 02786074 T AT02786074 T AT 02786074T AT E426921 T1 ATE426921 T1 AT E426921T1
Authority
AT
Austria
Prior art keywords
gate electrode
semiconductor substrate
crystal orientation
type diffusion
mis transistor
Prior art date
Application number
AT02786074T
Other languages
English (en)
Inventor
Tadahiro Ohmi
Koji Kotani
Shigetoshi Sugawa
Original Assignee
Tadahiro Ohmi
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadahiro Ohmi, Tokyo Electron Ltd filed Critical Tadahiro Ohmi
Application granted granted Critical
Publication of ATE426921T1 publication Critical patent/ATE426921T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0193—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Amplifiers (AREA)
AT02786074T 2001-12-13 2002-12-10 Komplementar-mis-bauelement ATE426921T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001380534A JP4265882B2 (ja) 2001-12-13 2001-12-13 相補型ｍｉｓ装置

Publications (1)

Publication Number Publication Date
ATE426921T1 true ATE426921T1 (de) 2009-04-15

Family

ID=19187189

Family Applications (2)

Application Number Title Priority Date Filing Date
AT07015129T ATE463048T1 (de) 2001-12-13 2002-12-10 Komplementäre mis-vorrichtung
AT02786074T ATE426921T1 (de) 2001-12-13 2002-12-10 Komplementar-mis-bauelement

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT07015129T ATE463048T1 (de) 2001-12-13 2002-12-10 Komplementäre mis-vorrichtung

Country Status (12)

Country Link
US (2) US7202534B2 (de)
EP (2) EP1848039B1 (de)
JP (1) JP4265882B2 (de)
KR (1) KR100557849B1 (de)
CN (1) CN1242480C (de)
AT (2) ATE463048T1 (de)
AU (1) AU2002354136A1 (de)
CA (1) CA2438214A1 (de)
DE (2) DE60235850D1 (de)
IL (2) IL157355A0 (de)
TW (1) TW587337B (de)
WO (1) WO2003054962A1 (de)

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JP2005354023A (ja) * 2004-05-14 2005-12-22 Seiko Epson Corp 半導体装置および半導体装置の製造方法
US7291886B2 (en) * 2004-06-21 2007-11-06 International Business Machines Corporation Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETs
US7042009B2 (en) * 2004-06-30 2006-05-09 Intel Corporation High mobility tri-gate devices and methods of fabrication
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US8188551B2 (en) 2005-09-30 2012-05-29 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
JP2007149942A (ja) * 2005-11-28 2007-06-14 Nec Electronics Corp 半導体装置およびその製造方法
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US7573104B2 (en) * 2006-03-06 2009-08-11 International Business Machines Corporation CMOS device on hybrid orientation substrate comprising equal mobility for perpendicular devices of each type
US20080283910A1 (en) * 2007-05-15 2008-11-20 Qimonda Ag Integrated circuit and method of forming an integrated circuit
JP4461154B2 (ja) 2007-05-15 2010-05-12 株式会社東芝 半導体装置
US20090057846A1 (en) * 2007-08-30 2009-03-05 Doyle Brian S Method to fabricate adjacent silicon fins of differing heights
FR2935539B1 (fr) * 2008-08-26 2010-12-10 Commissariat Energie Atomique Circuit cmos tridimensionnel sur deux substrats desalignes et procede de realisation
US7906802B2 (en) * 2009-01-28 2011-03-15 Infineon Technologies Ag Semiconductor element and a method for producing the same
KR101823105B1 (ko) * 2012-03-19 2018-01-30 삼성전자주식회사 전계 효과 트랜지스터의 형성 방법
JP5304974B1 (ja) 2012-03-27 2013-10-02 千住金属工業株式会社 摺動部材
CN103378152B (zh) * 2012-04-24 2016-02-17 中芯国际集成电路制造(上海)有限公司 鳍式场效应管及其形成方法
US9728464B2 (en) * 2012-07-27 2017-08-08 Intel Corporation Self-aligned 3-D epitaxial structures for MOS device fabrication
CN103579234A (zh) * 2012-08-03 2014-02-12 中国科学院微电子研究所 一种半导体结构及其制造方法
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Also Published As

Publication number Publication date
IL157355A0 (en) 2004-02-19
EP1455393A1 (de) 2004-09-08
JP2003188273A (ja) 2003-07-04
CN1242480C (zh) 2006-02-15
KR100557849B1 (ko) 2006-03-10
EP1455393B1 (de) 2009-03-25
CN1500291A (zh) 2004-05-26
US20070096175A1 (en) 2007-05-03
CA2438214A1 (en) 2003-07-03
IL157355A (en) 2009-07-20
EP1848039A3 (de) 2007-11-07
ATE463048T1 (de) 2010-04-15
TW587337B (en) 2004-05-11
TW200307371A (en) 2003-12-01
AU2002354136A1 (en) 2003-07-09
US7566936B2 (en) 2009-07-28
KR20040065262A (ko) 2004-07-21
WO2003054962A1 (en) 2003-07-03
DE60235850D1 (de) 2010-05-12
DE60231743D1 (de) 2009-05-07
JP4265882B2 (ja) 2009-05-20
US7202534B2 (en) 2007-04-10
US20040245579A1 (en) 2004-12-09
EP1455393A4 (de) 2006-01-25
EP1848039B1 (de) 2010-03-31
EP1848039A2 (de) 2007-10-24

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