ATE429036T1 - METHOD FOR PRODUCING A THIN FILM TRANSISTOR - Google Patents

METHOD FOR PRODUCING A THIN FILM TRANSISTOR

Info

Publication number
ATE429036T1
ATE429036T1 AT01932269T AT01932269T ATE429036T1 AT E429036 T1 ATE429036 T1 AT E429036T1 AT 01932269 T AT01932269 T AT 01932269T AT 01932269 T AT01932269 T AT 01932269T AT E429036 T1 ATE429036 T1 AT E429036T1
Authority
AT
Austria
Prior art keywords
film transistor
producing
thin film
thin
gate electrode
Prior art date
Application number
AT01932269T
Other languages
German (de)
Inventor
Hiroshi Tanabe
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Application granted granted Critical
Publication of ATE429036T1 publication Critical patent/ATE429036T1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

A thin-film transistor is provided which prevents the degradation of transistor characteristics due to ion channeling. A thin-film transistor (10) comprises thin crystalline silicon (2) including source and drain regions (2a) and a channel region (2b), which are formed on a substrate (1); a gate insulator (3) formed on the crystalline silicon (2); and a gate electrode (4) formed on the gate insulator (3). The gate electrode (4) includes an amorphous layer (5) and a crystalline layer (6). <IMAGE>
AT01932269T 2000-06-23 2001-05-25 METHOD FOR PRODUCING A THIN FILM TRANSISTOR ATE429036T1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000188727A JP4389359B2 (en) 2000-06-23 2000-06-23 Thin film transistor and manufacturing method thereof
PCT/JP2001/004402 WO2001099199A1 (en) 2000-06-23 2001-05-25 Thin-film transistor and method of manufacture thereof

Publications (1)

Publication Number Publication Date
ATE429036T1 true ATE429036T1 (en) 2009-05-15

Family

ID=18688467

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01932269T ATE429036T1 (en) 2000-06-23 2001-05-25 METHOD FOR PRODUCING A THIN FILM TRANSISTOR

Country Status (8)

Country Link
US (1) US7052944B2 (en)
EP (1) EP1304746B1 (en)
JP (1) JP4389359B2 (en)
KR (1) KR100517037B1 (en)
AT (1) ATE429036T1 (en)
DE (1) DE60138387D1 (en)
TW (1) TWI283069B (en)
WO (1) WO2001099199A1 (en)

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US7300829B2 (en) * 2003-06-02 2007-11-27 Applied Materials, Inc. Low temperature process for TFT fabrication
US6756643B1 (en) * 2003-06-12 2004-06-29 Advanced Micro Devices, Inc. Dual silicon layer for chemical mechanical polishing planarization
JP4219838B2 (en) * 2004-03-24 2009-02-04 シャープ株式会社 Semiconductor substrate manufacturing method and semiconductor device manufacturing method
TWI247930B (en) * 2004-08-10 2006-01-21 Ind Tech Res Inst Mask reduction of LTPS-TFT array by use of photo-sensitive low-k dielectrics
KR100719555B1 (en) * 2005-07-20 2007-05-17 삼성에스디아이 주식회사 A thin film transistor, an organic light emitting display device including the thin film transistor, and a polycrystalline semiconductor crystallization method used for the thin film transistor
WO2007046290A1 (en) * 2005-10-18 2007-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8067772B2 (en) * 2006-12-05 2011-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7968884B2 (en) * 2006-12-05 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5337380B2 (en) * 2007-01-26 2013-11-06 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
US7972943B2 (en) * 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5384088B2 (en) * 2008-11-28 2014-01-08 株式会社ジャパンディスプレイ Display device
TWI463658B (en) * 2009-03-20 2014-12-01 Unimicron Technology Corp Transistor device
JP7233639B2 (en) * 2019-04-19 2023-03-07 日新電機株式会社 Silicon film deposition method

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Also Published As

Publication number Publication date
DE60138387D1 (en) 2009-05-28
US20030096462A1 (en) 2003-05-22
JP2002009295A (en) 2002-01-11
TWI283069B (en) 2007-06-21
JP4389359B2 (en) 2009-12-24
KR100517037B1 (en) 2005-09-26
US7052944B2 (en) 2006-05-30
WO2001099199A1 (en) 2001-12-27
EP1304746A4 (en) 2006-01-11
EP1304746A1 (en) 2003-04-23
EP1304746B1 (en) 2009-04-15
KR20030028489A (en) 2003-04-08

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