ATE429036T1 - Verfahren zur herstellung eines dünnfilmtransistors - Google Patents

Verfahren zur herstellung eines dünnfilmtransistors

Info

Publication number
ATE429036T1
ATE429036T1 AT01932269T AT01932269T ATE429036T1 AT E429036 T1 ATE429036 T1 AT E429036T1 AT 01932269 T AT01932269 T AT 01932269T AT 01932269 T AT01932269 T AT 01932269T AT E429036 T1 ATE429036 T1 AT E429036T1
Authority
AT
Austria
Prior art keywords
film transistor
producing
thin film
thin
gate electrode
Prior art date
Application number
AT01932269T
Other languages
English (en)
Inventor
Hiroshi Tanabe
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Application granted granted Critical
Publication of ATE429036T1 publication Critical patent/ATE429036T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
AT01932269T 2000-06-23 2001-05-25 Verfahren zur herstellung eines dünnfilmtransistors ATE429036T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000188727A JP4389359B2 (ja) 2000-06-23 2000-06-23 薄膜トランジスタ及びその製造方法
PCT/JP2001/004402 WO2001099199A1 (en) 2000-06-23 2001-05-25 Thin-film transistor and method of manufacture thereof

Publications (1)

Publication Number Publication Date
ATE429036T1 true ATE429036T1 (de) 2009-05-15

Family

ID=18688467

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01932269T ATE429036T1 (de) 2000-06-23 2001-05-25 Verfahren zur herstellung eines dünnfilmtransistors

Country Status (8)

Country Link
US (1) US7052944B2 (de)
EP (1) EP1304746B1 (de)
JP (1) JP4389359B2 (de)
KR (1) KR100517037B1 (de)
AT (1) ATE429036T1 (de)
DE (1) DE60138387D1 (de)
TW (1) TWI283069B (de)
WO (1) WO2001099199A1 (de)

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US6756643B1 (en) * 2003-06-12 2004-06-29 Advanced Micro Devices, Inc. Dual silicon layer for chemical mechanical polishing planarization
JP4219838B2 (ja) * 2004-03-24 2009-02-04 シャープ株式会社 半導体基板の製造方法、並びに半導体装置の製造方法
TWI247930B (en) * 2004-08-10 2006-01-21 Ind Tech Res Inst Mask reduction of LTPS-TFT array by use of photo-sensitive low-k dielectrics
KR100719555B1 (ko) * 2005-07-20 2007-05-17 삼성에스디아이 주식회사 박막 트랜지스터, 그 박막 트랜지스터를 포함한 유기 발광표시장치 및 그 박막 트랜지스터에 이용되는 다결정 반도체결정화 방법
WO2007046290A1 (en) * 2005-10-18 2007-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8067772B2 (en) * 2006-12-05 2011-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7968884B2 (en) * 2006-12-05 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5337380B2 (ja) * 2007-01-26 2013-11-06 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US7972943B2 (en) * 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5384088B2 (ja) * 2008-11-28 2014-01-08 株式会社ジャパンディスプレイ 表示装置
TWI463658B (zh) * 2009-03-20 2014-12-01 Unimicron Technology Corp 電晶體裝置
JP7233639B2 (ja) * 2019-04-19 2023-03-07 日新電機株式会社 シリコン膜の成膜方法

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Also Published As

Publication number Publication date
DE60138387D1 (de) 2009-05-28
US20030096462A1 (en) 2003-05-22
JP2002009295A (ja) 2002-01-11
TWI283069B (en) 2007-06-21
JP4389359B2 (ja) 2009-12-24
KR100517037B1 (ko) 2005-09-26
US7052944B2 (en) 2006-05-30
WO2001099199A1 (en) 2001-12-27
EP1304746A4 (de) 2006-01-11
EP1304746A1 (de) 2003-04-23
EP1304746B1 (de) 2009-04-15
KR20030028489A (ko) 2003-04-08

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