ATE430378T1 - Elektromechanische elektronentransfereinrichtungen - Google Patents
Elektromechanische elektronentransfereinrichtungenInfo
- Publication number
- ATE430378T1 ATE430378T1 AT05724461T AT05724461T ATE430378T1 AT E430378 T1 ATE430378 T1 AT E430378T1 AT 05724461 T AT05724461 T AT 05724461T AT 05724461 T AT05724461 T AT 05724461T AT E430378 T1 ATE430378 T1 AT E430378T1
- Authority
- AT
- Austria
- Prior art keywords
- substrate
- pillar
- respect
- horizontal extent
- electron transfer
- Prior art date
Links
- 230000027756 respiratory electron transport chain Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 6
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02259—Driving or detection means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/402—Single electron transistors; Coulomb blockade transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02259—Driving or detection means
- H03H2009/02267—Driving or detection means having dimensions of atomic scale, e.g. involving electron transfer across vibration gap
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02283—Vibrating means
- H03H2009/02291—Beams
- H03H2009/02314—Beams forming part of a transistor structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Lasers (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/833,344 US6946693B1 (en) | 2004-04-27 | 2004-04-27 | Electromechanical electron transfer devices |
| PCT/US2005/006921 WO2005109520A2 (en) | 2004-04-27 | 2005-03-04 | Electromechanical electron transfer devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE430378T1 true ATE430378T1 (de) | 2009-05-15 |
Family
ID=34991954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05724461T ATE430378T1 (de) | 2004-04-27 | 2005-03-04 | Elektromechanische elektronentransfereinrichtungen |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6946693B1 (de) |
| EP (1) | EP1743381B1 (de) |
| AT (1) | ATE430378T1 (de) |
| DE (1) | DE602005014222D1 (de) |
| WO (1) | WO2005109520A2 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6946693B1 (en) * | 2004-04-27 | 2005-09-20 | Wisconsin Alumni Research Foundation | Electromechanical electron transfer devices |
| US7597788B2 (en) * | 2004-07-20 | 2009-10-06 | Applied Nanotech Holdings, Inc. | Oxygen-chemical agent sensor |
| US7736210B2 (en) * | 2006-09-12 | 2010-06-15 | Wisconsin Alumni Research Foundation | Microscale high-frequency vacuum electrical device |
| EP2082481B1 (de) * | 2006-10-09 | 2010-05-05 | Nxp B.V. | Resonator |
| US7414437B1 (en) | 2007-05-16 | 2008-08-19 | Wisconsin Alumni Research Foundation | Nanomechanical computer |
| US7776661B2 (en) * | 2007-07-11 | 2010-08-17 | Wisconsin Alumni Research Foundation | Nano-electromechanical circuit using co-planar transmission line |
| DE102007034072B3 (de) * | 2007-07-20 | 2009-03-19 | Ludwig-Maximilians-Universität München | Vorrichtung und Verfahren zum Ladungstransfer |
| US8080839B2 (en) * | 2009-08-28 | 2011-12-20 | Samsung Electronics Co. Ltd. | Electro-mechanical transistor |
| US8378895B2 (en) | 2010-04-08 | 2013-02-19 | Wisconsin Alumni Research Foundation | Coupled electron shuttle providing electrical rectification |
| US8605499B2 (en) * | 2011-04-22 | 2013-12-10 | International Business Machines Corporation | Resonance nanoelectromechanical systems |
| KR101724488B1 (ko) * | 2015-12-11 | 2017-04-07 | 현대자동차 주식회사 | Mems 공진기 |
| KR20200102828A (ko) | 2019-02-22 | 2020-09-01 | 한국과학기술연구원 | 전자 셔틀을 이용한 스위칭 소자 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3231742B2 (ja) | 1999-07-13 | 2001-11-26 | 科学技術振興事業団 | 積層構造を用いる単電子トンネルトランジスタ |
| US6355532B1 (en) * | 1999-10-06 | 2002-03-12 | Lsi Logic Corporation | Subtractive oxidation method of fabricating a short-length and vertically-oriented channel, dual-gate, CMOS FET |
| US6700693B2 (en) | 1999-12-03 | 2004-03-02 | Gentex Corporation | Electrochromic devices having an electron shuttle |
| DE19961811A1 (de) | 1999-12-21 | 2001-07-05 | Robert Blick | Einzelelektronentransferstruktur |
| WO2002093738A2 (en) * | 2001-01-19 | 2002-11-21 | California Institute Of Technology | Carbon nanobimorph actuator and sensor |
| US6653653B2 (en) | 2001-07-13 | 2003-11-25 | Quantum Logic Devices, Inc. | Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes |
| US6946693B1 (en) * | 2004-04-27 | 2005-09-20 | Wisconsin Alumni Research Foundation | Electromechanical electron transfer devices |
-
2004
- 2004-04-27 US US10/833,344 patent/US6946693B1/en not_active Expired - Lifetime
-
2005
- 2005-03-04 EP EP05724461A patent/EP1743381B1/de not_active Expired - Lifetime
- 2005-03-04 WO PCT/US2005/006921 patent/WO2005109520A2/en not_active Ceased
- 2005-03-04 DE DE602005014222T patent/DE602005014222D1/de not_active Expired - Lifetime
- 2005-03-04 AT AT05724461T patent/ATE430378T1/de not_active IP Right Cessation
- 2005-09-15 US US11/227,336 patent/US7214571B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1743381B1 (de) | 2009-04-29 |
| WO2005109520A2 (en) | 2005-11-17 |
| DE602005014222D1 (de) | 2009-06-10 |
| US7214571B2 (en) | 2007-05-08 |
| EP1743381A4 (de) | 2008-04-16 |
| WO2005109520A3 (en) | 2005-12-15 |
| US6946693B1 (en) | 2005-09-20 |
| US20060011998A1 (en) | 2006-01-19 |
| EP1743381A2 (de) | 2007-01-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |