ATE475197T1 - Halbleiterbauelement und verfahren zur herstellung eines solchen bauelements - Google Patents

Halbleiterbauelement und verfahren zur herstellung eines solchen bauelements

Info

Publication number
ATE475197T1
ATE475197T1 AT05718771T AT05718771T ATE475197T1 AT E475197 T1 ATE475197 T1 AT E475197T1 AT 05718771 T AT05718771 T AT 05718771T AT 05718771 T AT05718771 T AT 05718771T AT E475197 T1 ATE475197 T1 AT E475197T1
Authority
AT
Austria
Prior art keywords
region
semi
semiconductor
dielectric layer
component
Prior art date
Application number
AT05718771T
Other languages
English (en)
Inventor
Noort Wibo Van
Petrus Magnee
Lis Nanver
Celine Detcheverry
Ramon Havens
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE475197T1 publication Critical patent/ATE475197T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
AT05718771T 2004-04-27 2005-04-20 Halbleiterbauelement und verfahren zur herstellung eines solchen bauelements ATE475197T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP04101769 2004-04-27
EP04102908 2004-06-23
EP04103676 2004-07-30
PCT/IB2005/051293 WO2005104232A1 (en) 2004-04-27 2005-04-20 Semiconductor device and method of manufacturing such a device

Publications (1)

Publication Number Publication Date
ATE475197T1 true ATE475197T1 (de) 2010-08-15

Family

ID=34965515

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05718771T ATE475197T1 (de) 2004-04-27 2005-04-20 Halbleiterbauelement und verfahren zur herstellung eines solchen bauelements

Country Status (9)

Country Link
US (1) US8084829B2 (de)
EP (1) EP1743372B1 (de)
JP (1) JP2007535162A (de)
KR (1) KR101205115B1 (de)
CN (1) CN1947250B (de)
AT (1) ATE475197T1 (de)
DE (1) DE602005022428D1 (de)
TW (1) TW200539442A (de)
WO (1) WO2005104232A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7768092B2 (en) * 2005-07-20 2010-08-03 Cree Sweden Ab Semiconductor device comprising a junction having a plurality of rings
WO2007125977A1 (en) * 2006-04-27 2007-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic appliance using the same
US7868419B1 (en) * 2007-10-18 2011-01-11 Rf Micro Devices, Inc. Linearity improvements of semiconductor substrate based radio frequency devices
JP2011119512A (ja) * 2009-12-04 2011-06-16 Denso Corp 半導体装置およびその製造方法
US8492868B2 (en) * 2010-08-02 2013-07-23 International Business Machines Corporation Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer
KR101905823B1 (ko) 2011-07-27 2018-10-08 엘지이노텍 주식회사 웨이퍼 제조 장치 및 웨이퍼 제조 방법
FI127794B (en) * 2017-02-15 2019-02-28 Aalto Korkeakoulusaeaetioe Semiconductor structures and manufacturing the same
CN110870067B (zh) * 2017-05-29 2024-04-02 芬兰国家技术研究中心股份公司 半导体装置
EP3518280B1 (de) * 2018-01-25 2020-11-04 Murata Manufacturing Co., Ltd. Elektronisches produkt mit eingebettetem porösem dielektrikum und herstellungsverfahren
EP3789745B1 (de) * 2019-09-09 2024-04-10 Yageo Nexensos GmbH Flexible passive elektronische komponente und verfahren zur herstellung davon
FR3116151A1 (fr) * 2020-11-10 2022-05-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de formation d’une structure de piegeage d’un substrat utile

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3582890B2 (ja) * 1995-05-23 2004-10-27 株式会社日立製作所 半導体装置
US6680489B1 (en) * 1995-12-20 2004-01-20 Advanced Technology Materials, Inc. Amorphous silicon carbide thin film coating
KR100297703B1 (ko) * 1998-02-24 2001-08-07 김덕중 반절연폴리실리콘(sipos)을이용한전력반도체장치및그제조방법
US6356183B1 (en) * 1999-08-17 2002-03-12 United Microelectronics Corp. Method of manufacturing an inductor
US6503838B1 (en) * 1999-12-31 2003-01-07 Texas Instruments Incorporated Integrated circuit isolation of functionally distinct RF circuits
US6674131B2 (en) * 2000-06-27 2004-01-06 Matsushita Electric Industrial Co., Ltd. Semiconductor power device for high-temperature applications
SE520093C2 (sv) 2000-12-13 2003-05-27 Ericsson Telefon Ab L M Skärmad induktor
US6737727B2 (en) 2001-01-12 2004-05-18 International Business Machines Corporation Electronic structures with reduced capacitance
US6593185B1 (en) * 2002-05-17 2003-07-15 United Microelectronics Corp. Method of forming embedded capacitor structure applied to logic integrated circuit
JP4463482B2 (ja) 2002-07-11 2010-05-19 パナソニック株式会社 Ｍｉｓｆｅｔ及びその製造方法
US7316014B2 (en) 2002-07-12 2008-01-01 Bsquare Corporation Application modification system and method

Also Published As

Publication number Publication date
EP1743372A1 (de) 2007-01-17
DE602005022428D1 (de) 2010-09-02
CN1947250A (zh) 2007-04-11
KR101205115B1 (ko) 2012-11-26
KR20070004089A (ko) 2007-01-05
US20080173974A1 (en) 2008-07-24
EP1743372B1 (de) 2010-07-21
CN1947250B (zh) 2012-09-26
JP2007535162A (ja) 2007-11-29
US8084829B2 (en) 2011-12-27
TW200539442A (en) 2005-12-01
WO2005104232A1 (en) 2005-11-03

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Legal Events

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