ATE434269T1 - Herstellungsverfahren für source/drain elektrode für flachbildschirm - Google Patents

Herstellungsverfahren für source/drain elektrode für flachbildschirm

Info

Publication number
ATE434269T1
ATE434269T1 AT04090492T AT04090492T ATE434269T1 AT E434269 T1 ATE434269 T1 AT E434269T1 AT 04090492 T AT04090492 T AT 04090492T AT 04090492 T AT04090492 T AT 04090492T AT E434269 T1 ATE434269 T1 AT E434269T1
Authority
AT
Austria
Prior art keywords
source
drain electrode
production process
metal layer
flat screen
Prior art date
Application number
AT04090492T
Other languages
English (en)
Inventor
Tae-Sung Kim
Original Assignee
Samsung Mobile Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Mobile Display Co Ltd filed Critical Samsung Mobile Display Co Ltd
Application granted granted Critical
Publication of ATE434269T1 publication Critical patent/ATE434269T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT04090492T 2003-12-22 2004-12-14 Herstellungsverfahren für source/drain elektrode für flachbildschirm ATE434269T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030094815A KR100623247B1 (ko) 2003-12-22 2003-12-22 평판표시장치 및 그의 제조방법

Publications (1)

Publication Number Publication Date
ATE434269T1 true ATE434269T1 (de) 2009-07-15

Family

ID=34545889

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04090492T ATE434269T1 (de) 2003-12-22 2004-12-14 Herstellungsverfahren für source/drain elektrode für flachbildschirm

Country Status (7)

Country Link
US (1) US7294924B2 (de)
EP (1) EP1548838B1 (de)
JP (2) JP2005181973A (de)
KR (1) KR100623247B1 (de)
CN (1) CN1637566B (de)
AT (1) ATE434269T1 (de)
DE (1) DE602004021553D1 (de)

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WO2007011061A1 (en) 2005-07-22 2007-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100667087B1 (ko) 2005-09-30 2007-01-11 삼성에스디아이 주식회사 박막 트랜지스터 및 그의 제조방법
TWI267213B (en) * 2006-01-27 2006-11-21 Ind Tech Res Inst Organic light emitting device with integrated color filter and method of manufacturing the same
WO2007101120A1 (en) * 2006-02-23 2007-09-07 Acorn Technologies, Inc. Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source (s) and/or drain (s)
JP4713433B2 (ja) * 2006-05-15 2011-06-29 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ
KR101198218B1 (ko) * 2006-06-19 2012-11-07 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조 방법
KR100875432B1 (ko) 2007-05-31 2008-12-22 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
KR100889626B1 (ko) 2007-08-22 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법
KR100889627B1 (ko) 2007-08-23 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치
KR100965260B1 (ko) * 2008-01-25 2010-06-22 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치
KR100982310B1 (ko) 2008-03-27 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100989136B1 (ko) 2008-04-11 2010-10-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101002666B1 (ko) 2008-07-14 2010-12-21 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101147428B1 (ko) * 2009-02-09 2012-05-23 삼성모바일디스플레이주식회사 유기 발광 표시 장치
JP5604855B2 (ja) * 2009-11-17 2014-10-15 富士通株式会社 半導体装置及びその製造方法
KR101056431B1 (ko) * 2010-06-04 2011-08-11 삼성모바일디스플레이주식회사 박막 트랜지스터, 이를 구비한 표시 장치 및 그 제조 방법
JP5527225B2 (ja) * 2011-01-14 2014-06-18 ソニー株式会社 薄膜トランジスタおよび表示装置
JP2012252829A (ja) * 2011-06-01 2012-12-20 Seiko Epson Corp 発光装置の製造方法
JP2013080159A (ja) * 2011-10-05 2013-05-02 Japan Display East Co Ltd 液晶表示装置およびその製造方法
KR101957524B1 (ko) * 2012-12-31 2019-06-19 동우 화인켐 주식회사 포토레지스트 박리액 조성물
KR101957525B1 (ko) * 2012-12-31 2019-06-19 동우 화인켐 주식회사 포토레지스트 박리액 조성물
KR102322763B1 (ko) * 2014-12-19 2021-11-08 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
KR102396299B1 (ko) * 2015-07-06 2022-05-11 삼성디스플레이 주식회사 유기 발광 표시 장치
KR101916936B1 (ko) * 2016-12-01 2018-11-08 현대오트론 주식회사 전력 반도체 소자의 제조방법
CN107393828A (zh) * 2017-07-12 2017-11-24 武汉华星光电技术有限公司 薄膜晶体管的制作方法及薄膜晶体管
CN107221610B (zh) * 2017-07-25 2019-03-12 南京迈智芯微光电科技有限公司 一种提高性能的硅基有机发光器件及其制造方法
WO2023279808A1 (zh) * 2021-07-05 2023-01-12 长鑫存储技术有限公司 半导体结构及其制备方法
CN120076628A (zh) * 2021-07-29 2025-05-30 京东方科技集团股份有限公司 显示面板和显示装置
WO2024116264A1 (ja) * 2022-11-29 2024-06-06 日清紡マイクロデバイス株式会社 半導体装置

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JP4316896B2 (ja) 2003-01-09 2009-08-19 株式会社 日立ディスプレイズ 表示装置とその製造方法

Also Published As

Publication number Publication date
JP2007311809A (ja) 2007-11-29
KR20050063412A (ko) 2005-06-28
KR100623247B1 (ko) 2006-09-18
JP2005181973A (ja) 2005-07-07
EP1548838B1 (de) 2009-06-17
US20050133793A1 (en) 2005-06-23
CN1637566A (zh) 2005-07-13
US7294924B2 (en) 2007-11-13
EP1548838A1 (de) 2005-06-29
CN1637566B (zh) 2010-05-05
DE602004021553D1 (de) 2009-07-30
JP4886600B2 (ja) 2012-02-29

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