ATE437441T1 - Selektive anwendung von programmverhinderungsschemata in einem nichtflüchtigen speicher - Google Patents

Selektive anwendung von programmverhinderungsschemata in einem nichtflüchtigen speicher

Info

Publication number
ATE437441T1
ATE437441T1 AT06759594T AT06759594T ATE437441T1 AT E437441 T1 ATE437441 T1 AT E437441T1 AT 06759594 T AT06759594 T AT 06759594T AT 06759594 T AT06759594 T AT 06759594T AT E437441 T1 ATE437441 T1 AT E437441T1
Authority
AT
Austria
Prior art keywords
program
volatile memory
schemes
memory system
program inhibit
Prior art date
Application number
AT06759594T
Other languages
English (en)
Inventor
Jun Wan
Jeffrey Lutze
Masaaki Higashitani
Gerrit Hemink
Ken Oowada
Jian Chen
Geoffrey Gongwer
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE437441T1 publication Critical patent/ATE437441T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Storage Device Security (AREA)
AT06759594T 2005-05-12 2006-05-11 Selektive anwendung von programmverhinderungsschemata in einem nichtflüchtigen speicher ATE437441T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/127,743 US7295478B2 (en) 2005-05-12 2005-05-12 Selective application of program inhibit schemes in non-volatile memory
PCT/US2006/018278 WO2006124525A1 (en) 2005-05-12 2006-05-11 Selective application of program inhibit schemes in non-volatile memory

Publications (1)

Publication Number Publication Date
ATE437441T1 true ATE437441T1 (de) 2009-08-15

Family

ID=36950470

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06759594T ATE437441T1 (de) 2005-05-12 2006-05-11 Selektive anwendung von programmverhinderungsschemata in einem nichtflüchtigen speicher

Country Status (9)

Country Link
US (2) US7295478B2 (de)
EP (1) EP1880391B1 (de)
JP (2) JP4762309B2 (de)
KR (1) KR100952235B1 (de)
CN (1) CN101194323B (de)
AT (1) ATE437441T1 (de)
DE (1) DE602006007981D1 (de)
TW (1) TWI303826B (de)
WO (1) WO2006124525A1 (de)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3935139B2 (ja) * 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
US7161833B2 (en) 2004-02-06 2007-01-09 Sandisk Corporation Self-boosting system for flash memory cells
US7466590B2 (en) 2004-02-06 2008-12-16 Sandisk Corporation Self-boosting method for flash memory cells
US7295478B2 (en) 2005-05-12 2007-11-13 Sandisk Corporation Selective application of program inhibit schemes in non-volatile memory
JP4828901B2 (ja) * 2005-09-22 2011-11-30 株式会社東芝 半導体集積回路装置
JP4989872B2 (ja) * 2005-10-13 2012-08-01 ルネサスエレクトロニクス株式会社 半導体記憶装置および演算処理装置
US7511995B2 (en) 2006-03-30 2009-03-31 Sandisk Corporation Self-boosting system with suppression of high lateral electric fields
WO2007117869A2 (en) * 2006-03-30 2007-10-18 Sandisk Corporation Self-boosting system with suppression of high lateral electric fields
US7428165B2 (en) 2006-03-30 2008-09-23 Sandisk Corporation Self-boosting method with suppression of high lateral electric fields
KR100766241B1 (ko) * 2006-05-10 2007-10-10 주식회사 하이닉스반도체 플래쉬 메모리 소자의 프로그램 방법
US7525841B2 (en) * 2006-06-14 2009-04-28 Micron Technology, Inc. Programming method for NAND flash
JP4997882B2 (ja) * 2006-09-05 2012-08-08 ソニー株式会社 不揮発性半導体記憶装置およびその書き込み方法
US7535763B2 (en) * 2006-11-16 2009-05-19 Sandisk Corporation Controlled boosting in non-volatile memory soft programming
US7697338B2 (en) * 2006-11-16 2010-04-13 Sandisk Corporation Systems for controlled boosting in non-volatile memory soft programming
KR101263823B1 (ko) 2007-04-19 2013-05-13 삼성전자주식회사 비휘발성 메모리 소자 및 그 동작 방법
US7460404B1 (en) * 2007-05-07 2008-12-02 Sandisk Corporation Boosting for non-volatile storage using channel isolation switching
US7463522B2 (en) * 2007-05-07 2008-12-09 Sandisk Corporation Non-volatile storage with boosting using channel isolation switching
US7577026B2 (en) * 2007-05-07 2009-08-18 Sandisk Corporation Source and drain side early boosting using local self boosting for non-volatile storage
KR101274205B1 (ko) * 2007-07-13 2013-06-14 삼성전자주식회사 비휘발성 메모리 소자의 동작 방법
US7701769B2 (en) * 2007-08-13 2010-04-20 Macronix International Co., Ltd. Method and apparatus for programming nonvolatile memory
KR20090035203A (ko) 2007-10-05 2009-04-09 삼성전자주식회사 비휘발성 메모리 장치 및 그 동작 방법
US7808819B2 (en) * 2008-04-29 2010-10-05 Sandisk Il Ltd. Method for adaptive setting of state voltage levels in non-volatile memory
US7808836B2 (en) * 2008-04-29 2010-10-05 Sandisk Il Ltd. Non-volatile memory with adaptive setting of state voltage levels
US7821839B2 (en) * 2008-06-27 2010-10-26 Sandisk Il Ltd. Gain control for read operations in flash memory
US8045384B2 (en) * 2009-06-22 2011-10-25 Sandisk Technologies Inc. Reduced programming pulse width for enhanced channel boosting in non-volatile storage
US7916533B2 (en) * 2009-06-24 2011-03-29 Sandisk Corporation Forecasting program disturb in memory by detecting natural threshold voltage distribution
US8054691B2 (en) 2009-06-26 2011-11-08 Sandisk Technologies Inc. Detecting the completion of programming for non-volatile storage
US8134871B2 (en) * 2009-08-05 2012-03-13 Sandisk Technologies Inc. Programming memory with reduced pass voltage disturb and floating gate-to-control gate leakage
US8358540B2 (en) 2010-01-13 2013-01-22 Micron Technology, Inc. Access line dependent biasing schemes
US8146034B2 (en) 2010-04-30 2012-03-27 International Business Machines Corporation Efficient Redundancy Identification, Redundancy Removal, and Sequential Equivalence Checking within Designs Including Memory Arrays.
US8566764B2 (en) 2010-04-30 2013-10-22 International Business Machines Corporation Enhanced analysis of array-based netlists via phase abstraction
US8478574B2 (en) 2010-04-30 2013-07-02 International Business Machines Corporation Tracking array data contents across three-valued read and write operations
US8181131B2 (en) 2010-04-30 2012-05-15 International Business Machines Corporation Enhanced analysis of array-based netlists via reparameterization
US8291359B2 (en) 2010-05-07 2012-10-16 International Business Machines Corporation Array concatenation in an integrated circuit design
US8336016B2 (en) 2010-05-07 2012-12-18 International Business Machines Corporation Eliminating, coalescing, or bypassing ports in memory array representations
US8307313B2 (en) 2010-05-07 2012-11-06 International Business Machines Corporation Minimizing memory array representations for enhanced synthesis and verification
US8570808B2 (en) 2010-08-09 2013-10-29 Samsung Electronics Co., Ltd. Nonvolatile memory device with 3D memory cell array
JP2012069186A (ja) * 2010-09-22 2012-04-05 Toshiba Corp 不揮発性半導体記憶装置
JP2012119013A (ja) 2010-11-29 2012-06-21 Toshiba Corp 不揮発性半導体記憶装置
US8526233B2 (en) 2011-05-23 2013-09-03 Sandisk Technologies Inc. Ramping pass voltage to enhance channel boost in memory device, with optional temperature compensation
BR102012011617A2 (pt) * 2012-02-15 2013-11-05 Mediatek Inc Métodos para otimizar desempenhos de memórias flash serial
US8638608B2 (en) 2012-03-26 2014-01-28 Sandisk Technologies Inc. Selected word line dependent select gate voltage during program
US8902659B2 (en) 2012-03-26 2014-12-02 SanDisk Technologies, Inc. Shared-bit-line bit line setup scheme
US8804430B2 (en) 2012-03-26 2014-08-12 Sandisk Technologies Inc. Selected word line dependent select gate diffusion region voltage during programming
US8804425B2 (en) 2012-03-26 2014-08-12 Sandisk Technologies Inc. Selected word line dependent programming voltage
US8953362B2 (en) 2012-05-11 2015-02-10 Adesto Technologies Corporation Resistive devices and methods of operation thereof
US9165644B2 (en) 2012-05-11 2015-10-20 Axon Technologies Corporation Method of operating a resistive memory device with a ramp-up/ramp-down program/erase pulse
US9082510B2 (en) * 2012-09-14 2015-07-14 Freescale Semiconductor, Inc. Non-volatile memory (NVM) with adaptive write operations
WO2014063135A2 (en) 2012-10-19 2014-04-24 1Co, Inc. Systems and methods for customizing adjustable intraocular lenses
US9001553B1 (en) 2012-11-06 2015-04-07 Adesto Technologies Corporation Resistive devices and methods of operation thereof
US20140198576A1 (en) * 2013-01-16 2014-07-17 Macronix International Co, Ltd. Programming technique for reducing program disturb in stacked memory structures
JP2014175022A (ja) * 2013-03-06 2014-09-22 Toshiba Corp 半導体記憶装置及びそのデータ書き込み方法
US8879331B2 (en) 2013-03-12 2014-11-04 Sandisk Technologies Inc. Shared bit line string architecture
JP6179206B2 (ja) * 2013-06-11 2017-08-16 株式会社リコー メモリ制御装置
US9082502B2 (en) 2013-10-10 2015-07-14 Sandisk Technologies Inc. Bit line and compare voltage modulation for sensing nonvolatile storage elements
US9396807B2 (en) * 2013-11-11 2016-07-19 Seagate Technology Llc Incremental programming pulse optimization to reduce write errors
US9620238B2 (en) 2014-01-20 2017-04-11 Sandisk Technologies Llc Methods and systems that selectively inhibit and enable programming of non-volatile storage elements
US9213491B2 (en) 2014-03-31 2015-12-15 Intel Corporation Disabling a command associated with a memory device
US9245642B1 (en) 2015-03-30 2016-01-26 Sandisk Technologies Inc. Temperature dependent voltage to unselected drain side select transistor during program of 3D NAND
US9466369B1 (en) * 2015-12-21 2016-10-11 Sandisk Technologies Llc Word line-dependent ramping of pass voltage and program voltage for three-dimensional memory
US10176874B2 (en) 2016-03-16 2019-01-08 Toshiba Memory Corporation Storage device and method of controlling the storage device
US9583198B1 (en) * 2016-04-22 2017-02-28 Sandisk Technologies Llc Word line-dependent and temperature-dependent pass voltage during programming
US10910079B2 (en) * 2016-05-09 2021-02-02 Intrinsic Id B.V. Programming device arranged to obtain and store a random bit string in a memory device
US9891859B1 (en) * 2016-08-09 2018-02-13 Apple Inc. Systems and methods for managing non-volatile memory based on temperature
US10381094B2 (en) 2016-10-11 2019-08-13 Macronix International Co., Ltd. 3D memory with staged-level multibit programming
US9881683B1 (en) 2016-12-13 2018-01-30 Cypress Semiconductor Corporation Suppression of program disturb with bit line and select gate voltage regulation
US10121552B1 (en) 2017-04-24 2018-11-06 Sandisk Technologies Llc Reducing charge loss in data memory cell adjacent to dummy memory cell
US10468111B1 (en) 2018-04-30 2019-11-05 Sandisk Technologies Llc Asymmetric voltage ramp rate control
KR102736207B1 (ko) * 2018-11-23 2024-12-02 에스케이하이닉스 주식회사 메모리 장치 및 이의 동작 방법
US10546641B1 (en) 2018-12-07 2020-01-28 Micron Technology, Inc. Memory devices with controlled wordline ramp rates, and associated systems and methods
US11631462B2 (en) 2020-02-10 2023-04-18 International Business Machines Corporation Temperature assisted programming of flash memory for neuromorphic computing
KR102690420B1 (ko) 2020-04-07 2024-08-01 에스케이하이닉스 주식회사 메모리 장치 및 그것의 동작 방법
TWI733460B (zh) * 2020-05-22 2021-07-11 旺宏電子股份有限公司 記憶體裝置的寫入方法及記憶體系統
CN112435704B (zh) * 2020-12-07 2021-08-27 长江存储科技有限责任公司 非易失性存储器及其读取方法
US11636905B2 (en) * 2020-12-07 2023-04-25 Sandisk Technologies Llc Temperature compensation for unselected sub-block inhibit bias for mitigating erase disturb
KR102762832B1 (ko) 2020-12-07 2025-02-04 양쯔 메모리 테크놀로지스 씨오., 엘티디. 비-휘발성 메모리 및 그 동작 방법
US11961563B2 (en) 2022-05-26 2024-04-16 Sandisk Technologies Llc Balancing peak power with programming speed in non-volatile memory
US12176032B2 (en) * 2022-08-29 2024-12-24 Sandisk Technologies Llc Word line dependent pass voltage ramp rate to improve performance of NAND memory
US12046314B2 (en) 2022-08-29 2024-07-23 SanDisk Technologies, Inc. NAND memory with different pass voltage ramp rates for binary and multi-state memory
US12354664B2 (en) 2023-01-11 2025-07-08 SanDisk Technologies, Inc. Non-volatile memory with loop dependant ramp-up rate
JP2025106722A (ja) * 2024-01-04 2025-07-16 キオクシア株式会社 半導体記憶装置

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4933904A (en) 1985-11-29 1990-06-12 General Electric Company Dense EPROM having serially coupled floating gate transistors
FR2640798B1 (fr) 1988-12-20 1993-01-08 Bull Cp8 Dispositif de traitement de donnees comportant une memoire non volatile electriquement effacable et reprogrammable
KR960000616B1 (ko) 1993-01-13 1996-01-10 삼성전자주식회사 불휘발성 반도체 메모리 장치
JP3252306B2 (ja) * 1993-08-10 2002-02-04 株式会社日立製作所 半導体不揮発性記憶装置
EP0661636B1 (de) 1993-12-29 1998-09-23 STMicroelectronics S.r.l. Integrierte Programmierschaltung für eine elektrisch programmierbare Halbleiterspeicheranordnung mit Redundanz
KR0145475B1 (ko) 1995-03-31 1998-08-17 김광호 낸드구조를 가지는 불휘발성 반도체 메모리의 프로그램장치 및 방법
KR0172441B1 (ko) 1995-09-19 1999-03-30 김광호 불휘발성 반도체 메모리의 프로그램 방법
KR0170296B1 (ko) 1995-09-19 1999-03-30 김광호 비휘발성 메모리소자
US5763912A (en) 1995-09-25 1998-06-09 Intel Corporation Depletion and enhancement MOSFETs with electrically trimmable threshold voltages
US5712815A (en) 1996-04-22 1998-01-27 Advanced Micro Devices, Inc. Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells
US5748538A (en) 1996-06-17 1998-05-05 Aplus Integrated Circuits, Inc. OR-plane memory cell array for flash memory with bit-based write capability, and methods for programming and erasing the memory cell array
US5912489A (en) 1996-06-18 1999-06-15 Advanced Micro Devices, Inc. Dual source side polysilicon select gate structure utilizing single tunnel oxide for NAND array flash memory
TW338165B (en) 1996-09-09 1998-08-11 Sony Co Ltd Semiconductor nand type flash memory with incremental step pulse programming
JPH10320988A (ja) 1997-05-23 1998-12-04 Sony Corp 半導体不揮発性記憶装置、そのデータプログラム方法、およびその製造方法
JP3951443B2 (ja) 1997-09-02 2007-08-01 ソニー株式会社 不揮発性半導体記憶装置及びその書き込み方法
KR100297602B1 (ko) 1997-12-31 2001-08-07 윤종용 비휘발성메모리장치의프로그램방법
US5991202A (en) 1998-09-24 1999-11-23 Advanced Micro Devices, Inc. Method for reducing program disturb during self-boosting in a NAND flash memory
US6058060A (en) 1998-12-31 2000-05-02 Invox Technology Multi-bit-per-cell and analog/multi-level non-volatile memories with improved resolution and signal-to noise ratio
US6282145B1 (en) 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
US6229733B1 (en) 1999-03-24 2001-05-08 Texas Instruments Incorporated Non-volatile memory cell for linear mos integrated circuits utilizing fused mosfet gate oxide
US6181599B1 (en) 1999-04-13 2001-01-30 Sandisk Corporation Method for applying variable row BIAS to reduce program disturb in a flash memory storage array
US6175519B1 (en) 1999-07-22 2001-01-16 Macronix International Co., Ltd. Virtual ground EPROM structure
KR100319559B1 (ko) 1999-11-01 2002-01-05 윤종용 문턱 전압 분포들 사이의 마진을 일정하게 유지할 수 있는멀티-스테이트 불휘발성 반도체 메모리 장치
US6269026B1 (en) 2000-02-29 2001-07-31 Advanced Micro Devices, Inc. Charge sharing to help boost the wordlines during APDE verify
KR100338772B1 (ko) * 2000-03-10 2002-05-31 윤종용 바이어스 라인이 분리된 비휘발성 메모리 장치의 워드라인 드라이버 및 워드 라인 드라이빙 방법
KR100385226B1 (ko) 2000-11-22 2003-05-27 삼성전자주식회사 프로그램 디스터브를 방지할 수 있는 플래시 메모리 장치및 그것을 프로그램하는 방법
US6567314B1 (en) 2000-12-04 2003-05-20 Halo Lsi, Inc. Data programming implementation for high efficiency CHE injection
KR100385229B1 (ko) 2000-12-14 2003-05-27 삼성전자주식회사 스트링 선택 라인에 유도되는 노이즈 전압으로 인한프로그램 디스터브를 방지할 수 있는 불휘발성 반도체메모리 장치 및 그것의 프로그램 방법
US6512694B2 (en) 2001-03-16 2003-01-28 Simtek Corporation NAND stack EEPROM with random programming capability
DE60139670D1 (de) * 2001-04-10 2009-10-08 St Microelectronics Srl Verfahren zur Programmierung nichtflüchtiger Speicherzellen mit Programmier- und Prüfalgorithmus unter Verwendung treppenförmiger Spannungsimpulse mit variablem Stufenabstand
US6597609B2 (en) 2001-08-30 2003-07-22 Micron Technology, Inc. Non-volatile memory with test rows for disturb detection
KR100453854B1 (ko) * 2001-09-07 2004-10-20 삼성전자주식회사 향상된 프로그램 방지 특성을 갖는 불휘발성 반도체메모리 장치 및 그것의 프로그램 방법
US6661711B2 (en) 2002-02-06 2003-12-09 Sandisk Corporation Implementation of an inhibit during soft programming to tighten an erase voltage distribution
US6771536B2 (en) 2002-02-27 2004-08-03 Sandisk Corporation Operating techniques for reducing program and read disturbs of a non-volatile memory
KR100476888B1 (ko) * 2002-04-04 2005-03-17 삼성전자주식회사 온도보상기능을 가진 멀티비트 플래쉬메모리
US6639842B1 (en) 2002-05-15 2003-10-28 Silicon Storage Technology, Inc. Method and apparatus for programming non-volatile memory cells
US6859392B2 (en) 2002-08-26 2005-02-22 Micron Technology, Inc. Preconditioning global bitlines
US6798694B2 (en) 2002-08-29 2004-09-28 Micron Technology, Inc. Method for reducing drain disturb in programming
KR100502412B1 (ko) 2002-10-23 2005-07-19 삼성전자주식회사 불 휘발성 반도체 메모리 장치 및 그것의 프로그램 방법
JP3863485B2 (ja) * 2002-11-29 2006-12-27 株式会社東芝 不揮発性半導体記憶装置
US6859397B2 (en) 2003-03-05 2005-02-22 Sandisk Corporation Source side self boosting technique for non-volatile memory
US7259478B2 (en) * 2003-03-19 2007-08-21 Trigon Electronics, Inc. Backup power supply for telephone set
US6956770B2 (en) 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
US7170793B2 (en) 2004-04-13 2007-01-30 Sandisk Corporation Programming inhibit for non-volatile memory
US7023733B2 (en) 2004-05-05 2006-04-04 Sandisk Corporation Boosting to control programming of non-volatile memory
JP2006065945A (ja) * 2004-08-26 2006-03-09 Renesas Technology Corp 不揮発性半導体記憶装置および半導体集積回路装置
US7295478B2 (en) 2005-05-12 2007-11-13 Sandisk Corporation Selective application of program inhibit schemes in non-volatile memory

Also Published As

Publication number Publication date
TWI303826B (en) 2008-12-01
DE602006007981D1 (de) 2009-09-03
JP2008541331A (ja) 2008-11-20
TW200703346A (en) 2007-01-16
JP5334954B2 (ja) 2013-11-06
CN101194323A (zh) 2008-06-04
US20080019180A1 (en) 2008-01-24
US7295478B2 (en) 2007-11-13
EP1880391A1 (de) 2008-01-23
CN101194323B (zh) 2010-06-16
JP4762309B2 (ja) 2011-08-31
KR20080025052A (ko) 2008-03-19
EP1880391B1 (de) 2009-07-22
US7447086B2 (en) 2008-11-04
JP2011100540A (ja) 2011-05-19
WO2006124525A1 (en) 2006-11-23
US20060279990A1 (en) 2006-12-14
KR100952235B1 (ko) 2010-04-09

Similar Documents

Publication Publication Date Title
ATE437441T1 (de) Selektive anwendung von programmverhinderungsschemata in einem nichtflüchtigen speicher
ATE496373T1 (de) Programmierungsverfahren auf der basis des verhaltens nichtflüchtiger speicherzellen
ATE486349T1 (de) Gleichzeitige programmierung von nichtflüchtigem speicher
DE602004021493D1 (de) Nichtflüchtiger speicher und verfahren mit von bitleitung zu bitleitung gekoppelter kompensation
WO2011005401A4 (en) Reduced programming pulse width for enhanced channel boosting in non-volatile storage
TW200612433A (en) Programming inhibit for non-volatile memory
ATE381762T1 (de) Programmierung von nichtflüchtigem speicher
ATE512441T1 (de) Bereitstellung von energiereduktion bei der datenspeicherung in einem speicher
MY149576A (en) Method and device for reduced read latency of non-volatile memory
JP2009541909A5 (de)
WO2007089370A3 (en) Self-boosting method for flash memory cells
GB2474592A (en) Fractional program commands for memory devices
ATE478422T1 (de) Speicherblocklöschung in einer flash-speicher- vorrichtung
WO2015053919A4 (en) Bit line and compare voltage modulation for sensing nonvolatile storage elements
ATE493735T1 (de) Nand-flash-speicher, der programmstörungen mit einer selbstverstärkenden technik vermeidet
WO2012044635A3 (en) Sensing for nand memory based on word line position
ATE387716T1 (de) Nichtflüchtiger speicher und verfahren mit von benachbarten betriebsarten abhängiger bitleitungskompensation
WO2010141304A3 (en) Memory erase methods and devices
WO2008033693A3 (en) Non-volatile memory and method for linear estimation of initial programming voltage
TW200634838A (en) Page buffer of flash memory device with improved program operation performance and program operation control method
DE60317930D1 (de) Verbessertes system zum programmieren einer nichtflüchtigen speicherzelle
GB2492701A (en) Programming at least one multi-level phase change memory cell
ATE489708T1 (de) Reduktion von programmstörungen in einem nichtflüchtigen speicher mit frühem quellenseitigem boosting
TW200617967A (en) Method and apparatus for programming nonvolatile memory
ATE518229T1 (de) Verfahren zur programmierung eines nichtflüchtigen mehrzustandsspeichers unter verwendung einer intelligenten verifizierung

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties