ATE440383T1 - Schaltungssubstrat und verfahren - Google Patents
Schaltungssubstrat und verfahrenInfo
- Publication number
- ATE440383T1 ATE440383T1 AT03809375T AT03809375T ATE440383T1 AT E440383 T1 ATE440383 T1 AT E440383T1 AT 03809375 T AT03809375 T AT 03809375T AT 03809375 T AT03809375 T AT 03809375T AT E440383 T1 ATE440383 T1 AT E440383T1
- Authority
- AT
- Austria
- Prior art keywords
- cell
- circuit substrate
- semiconductor circuit
- detector
- electrical contact
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Stereo-Broadcasting Methods (AREA)
- Vehicle Body Suspensions (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0224903A GB0224903D0 (en) | 2002-10-25 | 2002-10-25 | Circuit substrate and method |
| GB0224902A GB0224902D0 (en) | 2002-10-25 | 2002-10-25 | Circuit substrate and method |
| PCT/GB2003/004635 WO2004038810A2 (en) | 2002-10-25 | 2003-10-27 | Circuit substrate and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE440383T1 true ATE440383T1 (de) | 2009-09-15 |
Family
ID=32178880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03809375T ATE440383T1 (de) | 2002-10-25 | 2003-10-27 | Schaltungssubstrat und verfahren |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7872237B2 (de) |
| EP (1) | EP1554760B1 (de) |
| JP (1) | JP2006504258A (de) |
| AT (1) | ATE440383T1 (de) |
| AU (1) | AU2003276401A1 (de) |
| DE (1) | DE60328904D1 (de) |
| WO (1) | WO2004038810A2 (de) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1554760B1 (de) * | 2002-10-25 | 2009-08-19 | Ipl Intellectual Property Licensing Limited | Schaltungssubstrat und verfahren |
| US7865850B1 (en) | 2007-02-28 | 2011-01-04 | Cadence Design Systems, Inc. | Method and apparatus for substrate noise aware floor planning for integrated circuit design |
| US7877713B2 (en) * | 2007-06-27 | 2011-01-25 | Cadence Design Systems, Inc. | Method and apparatus for substrate noise analysis using substrate tile model and tile grid |
| US7900166B2 (en) * | 2007-06-27 | 2011-03-01 | Cadence Design Systems, Inc. | Method to produce an electrical model of an integrated circuit substrate and related system and article of manufacture |
| KR100882261B1 (ko) * | 2007-07-25 | 2009-02-06 | 삼성전기주식회사 | 인쇄회로기판의 제조 방법 및 장치 |
| US9350976B2 (en) | 2007-11-26 | 2016-05-24 | First Sensor Mobility Gmbh | Imaging unit of a camera for recording the surroundings with optics uncoupled from a circuit board |
| US7965329B2 (en) | 2008-09-09 | 2011-06-21 | Omnivision Technologies, Inc. | High gain read circuit for 3D integrated pixel |
| US8957992B2 (en) * | 2010-01-06 | 2015-02-17 | Gary Edwin Sutton | Curved sensor camera with moving optical train |
| US8117741B2 (en) | 2009-04-07 | 2012-02-21 | Oy Ajat Ltd | Method for manufacturing a radiation imaging panel comprising imaging tiles |
| US8829453B2 (en) * | 2009-06-05 | 2014-09-09 | Rti Electronics Ab | X-ray detection device |
| KR101654140B1 (ko) | 2010-03-30 | 2016-09-09 | 삼성전자주식회사 | 산화물 반도체 트랜지스터를 구비한 엑스선 검출기 |
| KR101678671B1 (ko) | 2010-04-01 | 2016-11-22 | 삼성전자주식회사 | 이중 포토컨덕터를 구비한 엑스선 검출기 |
| TWI441119B (zh) | 2010-04-02 | 2014-06-11 | Arolltech Co Ltd | 具內嵌觸控裝置之顯示器 |
| US20120061789A1 (en) * | 2010-09-13 | 2012-03-15 | Omnivision Technologies, Inc. | Image sensor with improved noise shielding |
| US8575558B2 (en) * | 2010-11-30 | 2013-11-05 | General Electric Company | Detector array with a through-via interposer |
| KR101634252B1 (ko) * | 2010-12-10 | 2016-07-08 | 삼성전자주식회사 | 웨이퍼 스케일의 엑스선 검출기 및 제조방법 |
| KR101820843B1 (ko) * | 2011-02-18 | 2018-01-22 | 삼성전자주식회사 | 확산방지막을 구비한 엑스선 검출기 |
| KR101761817B1 (ko) | 2011-03-04 | 2017-07-26 | 삼성전자주식회사 | 대면적 엑스선 검출기 |
| US8798229B2 (en) * | 2011-09-30 | 2014-08-05 | General Electric Company | Detector modules and methods of manufacturing |
| RU2665125C2 (ru) * | 2013-10-22 | 2018-08-28 | Конинклейке Филипс Н.В. | Рентгеновская система, в частности система томосинтеза, и способ получения изображения объекта |
| WO2017059573A1 (en) | 2015-10-09 | 2017-04-13 | Shenzhen Xpectvision Technology Co., Ltd. | Packaging methods of semiconductor x-ray detectors |
| US9769398B2 (en) | 2016-01-06 | 2017-09-19 | Microsoft Technology Licensing, Llc | Image sensor with large-area global shutter contact |
| WO2017145816A1 (ja) * | 2016-02-24 | 2017-08-31 | ソニー株式会社 | 光学測定器、フローサイトメータ、および放射線計数器 |
| US9664802B1 (en) * | 2016-06-23 | 2017-05-30 | Institute of Nuclear Energy Research, Atomic Energy Council, Executive Yuan, R.O.C. | Simplified radiation spectrum analyzer |
| FR3053838B1 (fr) * | 2016-07-08 | 2018-08-17 | Thales | Procede de fabrication de photodetecteur comprenant un empilement de couches superposees |
| EP3355082B1 (de) * | 2017-01-27 | 2020-04-15 | Detection Technology Oy | Strahlungsdetektor-plattenanordnungsstruktur |
| WO2019144324A1 (en) * | 2018-01-24 | 2019-08-01 | Shenzhen Xpectvision Technology Co., Ltd. | Packaging of radiation detectors in an image sensor |
| EP3872533B1 (de) * | 2018-10-25 | 2025-12-17 | Kabushiki Kaisha Toshiba | Photonenzählender strahlungsdetektor und strahlenuntersuchungsvorrichtung damit |
| US11277559B2 (en) * | 2019-04-26 | 2022-03-15 | Qualcomm Incorporated | Image sensor system |
| CN114126225B (zh) * | 2020-08-31 | 2024-12-17 | 庆鼎精密电子(淮安)有限公司 | 电路基板的制造方法、电路板及其制造方法 |
| US12560728B2 (en) * | 2022-11-10 | 2026-02-24 | Redlen Technologies, Inc. | Radiation detector having improved equalization of pixel response |
| CN120419317A (zh) * | 2022-12-30 | 2025-08-01 | 上海联影医疗科技股份有限公司 | 用于探测辐射射线的光子计数探测器 |
| WO2026035248A1 (en) * | 2024-08-05 | 2026-02-12 | Analogic Corporation | Detectors for computed tomography scanners and related assemblies and systems |
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| FR2820243B1 (fr) | 2001-01-31 | 2003-06-13 | Univ Paris Curie | Procede et dispositif de fabrication d'un detecteur electronique en gaas pour la detection de rayons x pour l'imagerie |
| JP4653336B2 (ja) | 2001-04-18 | 2011-03-16 | 浜松ホトニクス株式会社 | エネルギー線検出器及び装置 |
| US7385286B2 (en) * | 2001-06-05 | 2008-06-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor module |
| AU2002333693A1 (en) * | 2001-08-24 | 2003-04-01 | Schott Glas | Method for producing micro-electromechanical components |
| US6645787B2 (en) * | 2002-01-22 | 2003-11-11 | Technion Research And Development Foundation Ltd. | Gamma ray detector |
| JP4012743B2 (ja) * | 2002-02-12 | 2007-11-21 | 浜松ホトニクス株式会社 | 光検出装置 |
| US7189971B2 (en) * | 2002-02-15 | 2007-03-13 | Oy Ajat Ltd | Radiation imaging device and system |
| US6952042B2 (en) * | 2002-06-17 | 2005-10-04 | Honeywell International, Inc. | Microelectromechanical device with integrated conductive shield |
| US7038288B2 (en) * | 2002-09-25 | 2006-05-02 | Microsemi Corporation | Front side illuminated photodiode with backside bump |
| EP1554760B1 (de) * | 2002-10-25 | 2009-08-19 | Ipl Intellectual Property Licensing Limited | Schaltungssubstrat und verfahren |
| JP2006073586A (ja) * | 2004-08-31 | 2006-03-16 | Renesas Technology Corp | 半導体装置の製造方法 |
| TWI353667B (en) * | 2007-07-13 | 2011-12-01 | Xintec Inc | Image sensor package and fabrication method thereo |
-
2003
- 2003-10-27 EP EP03809375A patent/EP1554760B1/de not_active Expired - Lifetime
- 2003-10-27 JP JP2004546198A patent/JP2006504258A/ja active Pending
- 2003-10-27 WO PCT/GB2003/004635 patent/WO2004038810A2/en not_active Ceased
- 2003-10-27 AU AU2003276401A patent/AU2003276401A1/en not_active Abandoned
- 2003-10-27 US US10/532,119 patent/US7872237B2/en not_active Expired - Lifetime
- 2003-10-27 AT AT03809375T patent/ATE440383T1/de not_active IP Right Cessation
- 2003-10-27 DE DE60328904T patent/DE60328904D1/de not_active Expired - Lifetime
-
2010
- 2010-12-31 US US12/983,004 patent/US8497483B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US8497483B2 (en) | 2013-07-30 |
| AU2003276401A8 (en) | 2004-05-13 |
| EP1554760B1 (de) | 2009-08-19 |
| US20110156273A1 (en) | 2011-06-30 |
| EP1554760A2 (de) | 2005-07-20 |
| DE60328904D1 (de) | 2009-10-01 |
| JP2006504258A (ja) | 2006-02-02 |
| WO2004038810A2 (en) | 2004-05-06 |
| US20080093560A1 (en) | 2008-04-24 |
| WO2004038810A3 (en) | 2004-06-17 |
| AU2003276401A1 (en) | 2004-05-13 |
| US7872237B2 (en) | 2011-01-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |