ATE441188T1 - Mehrstufige programmierung bei einer nichtflüchtigen speichervorrichtung - Google Patents

Mehrstufige programmierung bei einer nichtflüchtigen speichervorrichtung

Info

Publication number
ATE441188T1
ATE441188T1 AT06736241T AT06736241T ATE441188T1 AT E441188 T1 ATE441188 T1 AT E441188T1 AT 06736241 T AT06736241 T AT 06736241T AT 06736241 T AT06736241 T AT 06736241T AT E441188 T1 ATE441188 T1 AT E441188T1
Authority
AT
Austria
Prior art keywords
memory device
volatile memory
stage programming
programming
memory block
Prior art date
Application number
AT06736241T
Other languages
English (en)
Inventor
Di Li
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE441188T1 publication Critical patent/ATE441188T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5648—Multilevel memory programming, reading or erasing operations wherein the order or sequence of the operations is relevant
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
AT06736241T 2005-02-28 2006-02-28 Mehrstufige programmierung bei einer nichtflüchtigen speichervorrichtung ATE441188T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/067,977 US7212436B2 (en) 2005-02-28 2005-02-28 Multiple level programming in a non-volatile memory device
PCT/US2006/006882 WO2006093886A1 (en) 2005-02-28 2006-02-28 Multiple level programming in a non-volatile memory device

Publications (1)

Publication Number Publication Date
ATE441188T1 true ATE441188T1 (de) 2009-09-15

Family

ID=36660742

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06736241T ATE441188T1 (de) 2005-02-28 2006-02-28 Mehrstufige programmierung bei einer nichtflüchtigen speichervorrichtung

Country Status (8)

Country Link
US (2) US7212436B2 (de)
EP (1) EP1854102B1 (de)
JP (1) JP4806814B2 (de)
KR (1) KR100904352B1 (de)
CN (1) CN101128883B (de)
AT (1) ATE441188T1 (de)
DE (1) DE602006008748D1 (de)
WO (1) WO2006093886A1 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7212447B2 (en) * 2005-08-04 2007-05-01 Micron Technology, Inc. NAND flash memory cell programming
US8521945B2 (en) * 2005-09-29 2013-08-27 Trek 2000 International Ltd. Portable data storage using SLC and MLC flash memory
US7366013B2 (en) * 2005-12-09 2008-04-29 Micron Technology, Inc. Single level cell programming in a multiple level cell non-volatile memory device
ATE515771T1 (de) * 2006-06-22 2011-07-15 Sandisk Corp Verfahren zur nichtrealen zeitprogrammierung eines nichtflüchtigen speichers zum erreichen einer festeren verteilung von schwellenspannungen
US7474560B2 (en) * 2006-08-21 2009-01-06 Micron Technology, Inc. Non-volatile memory with both single and multiple level cells
KR100769776B1 (ko) * 2006-09-29 2007-10-24 주식회사 하이닉스반도체 낸드 플래시 메모리 소자의 프로그램 방법
US7738291B2 (en) * 2007-03-12 2010-06-15 Micron Technology, Inc. Memory page boosting method, device and system
KR100877104B1 (ko) * 2007-06-26 2009-01-07 주식회사 하이닉스반도체 멀티 레벨 셀 플래시 메모리소자의 프로그램 방법
US7869273B2 (en) 2007-09-04 2011-01-11 Sandisk Corporation Reducing the impact of interference during programming
US7742335B2 (en) 2007-10-31 2010-06-22 Micron Technology, Inc. Non-volatile multilevel memory cells
US7848142B2 (en) 2007-10-31 2010-12-07 Micron Technology, Inc. Fractional bits in memory cells
US7668012B2 (en) * 2007-10-31 2010-02-23 Micron Technology, Inc. Memory cell programming
KR101227368B1 (ko) * 2007-11-05 2013-01-29 삼성전자주식회사 낸드 플래시 메모리 소자의 프로그래밍 방법 및 데이터읽기 방법.
US7826262B2 (en) * 2008-01-10 2010-11-02 Macronix International Co., Ltd Operation method of nitride-based flash memory and method of reducing coupling interference
KR101386489B1 (ko) * 2008-01-14 2014-04-21 삼성전자주식회사 메모리 장치 및 멀티 비트 프로그래밍 방법
US7817472B2 (en) * 2008-02-14 2010-10-19 Macronix International Co., Ltd. Operating method of memory device
KR101378602B1 (ko) * 2008-05-13 2014-03-25 삼성전자주식회사 메모리 장치 및 메모리 프로그래밍 방법
US7949821B2 (en) * 2008-06-12 2011-05-24 Micron Technology, Inc. Method of storing data on a flash memory device
KR101490421B1 (ko) 2008-07-11 2015-02-06 삼성전자주식회사 메모리 셀 사이의 간섭을 억제할 수 있는 불휘발성 메모리장치, 컴퓨팅 시스템 및 그것의 프로그램 방법
KR101518039B1 (ko) * 2008-12-08 2015-05-07 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
KR101586047B1 (ko) * 2009-03-25 2016-01-18 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
JP5259481B2 (ja) * 2009-04-14 2013-08-07 株式会社東芝 不揮発性半導体記憶装置
US8402203B2 (en) * 2009-12-31 2013-03-19 Seagate Technology Llc Systems and methods for storing data in a multi-level cell solid state storage device
US8549214B2 (en) * 2010-02-17 2013-10-01 Marvell World Trade Ltd. Protection against data corruption for multi-level memory cell (MLC) flash memory
US8218366B2 (en) 2010-04-18 2012-07-10 Sandisk Technologies Inc. Programming non-volatile storage including reducing impact from other memory cells
US8767459B1 (en) * 2010-07-31 2014-07-01 Apple Inc. Data storage in analog memory cells across word lines using a non-integer number of bits per cell
KR101807539B1 (ko) 2010-08-20 2017-12-12 삼성전자주식회사 3차원 비휘발성 메모리 장치의 메모리 셀 어레이의 어드레스 스케쥴링 방법
US10671529B2 (en) 2010-08-20 2020-06-02 Samsung Electronics Co., Ltd. Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arrays
US9026757B2 (en) * 2013-01-25 2015-05-05 Sandisk Technologies Inc. Non-volatile memory programming data preservation
US8913428B2 (en) 2013-01-25 2014-12-16 Sandisk Technologies Inc. Programming non-volatile storage system with multiple memory die
TWI514141B (zh) * 2013-08-08 2015-12-21 Phison Electronics Corp 記憶體位址管理方法、記憶體控制器與記憶體儲存裝置
TWI588843B (zh) * 2013-08-23 2017-06-21 慧榮科技股份有限公司 存取快閃記憶體中儲存單元的方法以及使用該方法的裝置
CN110175088B (zh) 2013-08-23 2022-11-11 慧荣科技股份有限公司 存取快闪存储器中储存单元的方法以及使用该方法的装置
CN108447516B (zh) 2013-08-23 2020-04-24 慧荣科技股份有限公司 存取快闪存储器中存储单元的方法以及使用该方法的装置
CN104424127A (zh) 2013-08-23 2015-03-18 慧荣科技股份有限公司 存取快闪存储器中储存单元的方法以及使用该方法的装置
CN107193684B (zh) 2013-08-23 2020-10-16 慧荣科技股份有限公司 存取快闪存储器中储存单元的方法以及使用该方法的装置
KR102070667B1 (ko) 2013-08-26 2020-01-29 삼성전자주식회사 비휘발성 메모리 장치의 구동 방법
US9734912B2 (en) * 2015-11-25 2017-08-15 Macronix International Co., Ltd. Reprogramming single bit memory cells without intervening erasure
CN110827904B (zh) * 2018-08-09 2023-04-14 旺宏电子股份有限公司 存储器装置及其编程方法
KR102850056B1 (ko) * 2021-11-29 2025-08-25 삼성전자주식회사 메모리 어레이의 프로그램 방법 및 이를 수행하는 메모리 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5903495A (en) * 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
JP3200006B2 (ja) * 1996-03-18 2001-08-20 株式会社東芝 不揮発性半導体記憶装置
US5764568A (en) * 1996-10-24 1998-06-09 Micron Quantum Devices, Inc. Method for performing analog over-program and under-program detection for a multistate memory cell
JP2001093288A (ja) * 1999-09-20 2001-04-06 Toshiba Corp 不揮発性半導体記憶装置
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6967872B2 (en) * 2001-12-18 2005-11-22 Sandisk Corporation Method and system for programming and inhibiting multi-level, non-volatile memory cells
DE10164415A1 (de) * 2001-12-29 2003-07-17 Philips Intellectual Property Verfahren und Anordnung zur Programmierung und Verifizierung von EEPROM-Pages sowie ein entsprechendes Computerprogrammprodukt und ein entsprechendes computerlesbares Speichermedium
JP3935139B2 (ja) * 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
US6657891B1 (en) * 2002-11-29 2003-12-02 Kabushiki Kaisha Toshiba Semiconductor memory device for storing multivalued data

Also Published As

Publication number Publication date
EP1854102B1 (de) 2009-08-26
US20060209596A1 (en) 2006-09-21
CN101128883B (zh) 2010-06-16
EP1854102A1 (de) 2007-11-14
CN101128883A (zh) 2008-02-20
WO2006093886A1 (en) 2006-09-08
KR100904352B1 (ko) 2009-06-23
JP2008532199A (ja) 2008-08-14
US7212436B2 (en) 2007-05-01
DE602006008748D1 (de) 2009-10-08
US7221589B2 (en) 2007-05-22
JP4806814B2 (ja) 2011-11-02
US20060193176A1 (en) 2006-08-31
KR20070112224A (ko) 2007-11-22

Similar Documents

Publication Publication Date Title
ATE441188T1 (de) Mehrstufige programmierung bei einer nichtflüchtigen speichervorrichtung
DE60235951D1 (de) Pipeline-programmierung für einen NAND-typ Flash-Speicher
GB2446355B (en) A controller for non-volatile memories, and methods of operating the memory controller
TWI371041B (en) Non-volatile memory and method for predictive programming
DE602004025783D1 (de) Flash-Speicher und sein Programmierungsverfahren
DE602005023125D1 (de) Vertikaler MOSFET Transistor als Auswahltransistor für nichtflüchtige Speichereinrichtung betrieben
DE602004007173D1 (de) Nichtflüchtiger Halbleiterspeicher
ATE496900T1 (de) Isoxazoline für die bekämpfung von wirbellosen schädlingen
DE602004020504D1 (de) Speichersteuerung
DE602004024278D1 (de) Aktualisierung des Computerprogramms eines Netzwerkgeräts durch ein entferntes Steuergerät
DE602007002041D1 (de) Nichtflüchtige Speichervorrichtung und Verfahren zum Betreiben derselben
DE602007005717D1 (de) Halbleiterspeicher und Steuerungsverfahren für den Auffrischungszyklus
DE602006019639D1 (de) Nichtflüchtige halbleiterspeicheranordnung
DE602004010239D1 (de) Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung
EP1889215A4 (de) Ermöglichung einer automatisierten besprechungs-ablaufplanung
DE602005017951D1 (de) Fluidströmungs-steuerregler
DE602004028481D1 (de) Automatisches programmierverfahren und einrichtung
DE602005012080D1 (de) Verfahren und vorrichtung für eine doppelte stromversorgung für eingebetteten, nicht-flüchtigen speicher
DK2251351T4 (da) Sclerostinepitoper
ATE478422T1 (de) Speicherblocklöschung in einer flash-speicher- vorrichtung
DE60317930D1 (de) Verbessertes system zum programmieren einer nichtflüchtigen speicherzelle
IL309863A (en) Automatic data entry for form data structures using application programming interfaces
DE602006011684D1 (de) Nichtflüchtiger Halbleiterspeicher mit drei Zuständen und dessen Betriebsverfahren
ATE479681T1 (de) Substituierte piperidine
DE50312843D1 (de) Automatische prozesskontrolle

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties