ATE441205T1 - Verfahren zum versiegeln zweier platten mit ausbildung eines ohmschen kontakts dazwischen - Google Patents

Verfahren zum versiegeln zweier platten mit ausbildung eines ohmschen kontakts dazwischen

Info

Publication number
ATE441205T1
ATE441205T1 AT04816589T AT04816589T ATE441205T1 AT E441205 T1 ATE441205 T1 AT E441205T1 AT 04816589 T AT04816589 T AT 04816589T AT 04816589 T AT04816589 T AT 04816589T AT E441205 T1 ATE441205 T1 AT E441205T1
Authority
AT
Austria
Prior art keywords
plates
formation
sealing
ohmic contact
semiconductor materials
Prior art date
Application number
AT04816589T
Other languages
English (en)
Inventor
Stephane Pocas
Hubert Moriceau
Jean-Francois Michaud
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE441205T1 publication Critical patent/ATE441205T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Secondary Cells (AREA)
  • Led Devices (AREA)
AT04816589T 2003-12-23 2004-12-21 Verfahren zum versiegeln zweier platten mit ausbildung eines ohmschen kontakts dazwischen ATE441205T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0351190A FR2864336B1 (fr) 2003-12-23 2003-12-23 Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci
PCT/FR2004/050742 WO2005064657A1 (fr) 2003-12-23 2004-12-21 Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci

Publications (1)

Publication Number Publication Date
ATE441205T1 true ATE441205T1 (de) 2009-09-15

Family

ID=34630635

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04816589T ATE441205T1 (de) 2003-12-23 2004-12-21 Verfahren zum versiegeln zweier platten mit ausbildung eines ohmschen kontakts dazwischen

Country Status (7)

Country Link
US (1) US8975156B2 (de)
EP (1) EP1697975B1 (de)
JP (1) JP4884979B2 (de)
AT (1) ATE441205T1 (de)
DE (1) DE602004022860D1 (de)
FR (1) FR2864336B1 (de)
WO (1) WO2005064657A1 (de)

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DE602004022860D1 (de) 2009-10-08
US20070072391A1 (en) 2007-03-29
WO2005064657A1 (fr) 2005-07-14
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FR2864336B1 (fr) 2006-04-28
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