ATE400900T1 - Verfahren zum herstellen einer fotovoltaischen zelle auf der basis von dünnfilm-silizium - Google Patents

Verfahren zum herstellen einer fotovoltaischen zelle auf der basis von dünnfilm-silizium

Info

Publication number
ATE400900T1
ATE400900T1 AT06726258T AT06726258T ATE400900T1 AT E400900 T1 ATE400900 T1 AT E400900T1 AT 06726258 T AT06726258 T AT 06726258T AT 06726258 T AT06726258 T AT 06726258T AT E400900 T1 ATE400900 T1 AT E400900T1
Authority
AT
Austria
Prior art keywords
thin film
photovoltaic cell
cell based
producing
film silicon
Prior art date
Application number
AT06726258T
Other languages
English (en)
Inventor
Stephanie Huet
Pierre Juliet
Cedric Ducros
Frederic Sanchette
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE400900T1 publication Critical patent/ATE400900T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/131—Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
AT06726258T 2005-03-22 2006-03-20 Verfahren zum herstellen einer fotovoltaischen zelle auf der basis von dünnfilm-silizium ATE400900T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0550739A FR2883663B1 (fr) 2005-03-22 2005-03-22 Procede de fabrication d'une cellule photovoltaique a base de silicium en couche mince.

Publications (1)

Publication Number Publication Date
ATE400900T1 true ATE400900T1 (de) 2008-07-15

Family

ID=35457249

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06726258T ATE400900T1 (de) 2005-03-22 2006-03-20 Verfahren zum herstellen einer fotovoltaischen zelle auf der basis von dünnfilm-silizium

Country Status (8)

Country Link
US (1) US7592198B2 (de)
EP (1) EP1861882B1 (de)
JP (1) JP4814307B2 (de)
AT (1) ATE400900T1 (de)
DE (1) DE602006001741D1 (de)
ES (1) ES2310405T3 (de)
FR (1) FR2883663B1 (de)
WO (1) WO2006100403A1 (de)

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KR100803186B1 (ko) * 2000-12-15 2008-02-14 디 아리조나 보드 오브 리전츠 나노입자 함유 전구체를 사용한 금속의 패턴형성 방법
JP2008123814A (ja) * 2006-11-10 2008-05-29 Sanyo Electric Co Ltd リチウム二次電池及びその製造方法
JP2010518609A (ja) * 2007-02-08 2010-05-27 ウーシー・サンテック・パワー・カンパニー・リミテッド ハイブリッドシリコン太陽電池及び該ハイブリッドシリコン太陽電池の製造方法
WO2008150769A2 (en) * 2007-05-31 2008-12-11 Thinsilicon Corporation Photovoltaic device and method of manufacturing photovoltaic devices
US20090211622A1 (en) * 2008-02-21 2009-08-27 Sunlight Photonics Inc. Multi-layered electro-optic devices
FR2930680B1 (fr) * 2008-04-23 2010-08-27 Commissariat Energie Atomique Procede de fabrication d'une cellule photovoltaique a base de silicium en couches minces.
US20100078064A1 (en) * 2008-09-29 2010-04-01 Thinsilicion Corporation Monolithically-integrated solar module
TW201041158A (en) * 2009-05-12 2010-11-16 Chin-Yao Tsai Thin film solar cell and manufacturing method thereof
US8148192B2 (en) * 2010-02-22 2012-04-03 James P Campbell Transparent solar cell method of fabrication via float glass process
US8168467B2 (en) * 2010-03-17 2012-05-01 James P Campbell Solar cell method of fabrication via float glass process
DE112010005921T5 (de) * 2010-10-05 2013-09-26 Mitsubishi Electric Corporation Photovoltaische Vorrichtung und Herstellungsverfahren derselben
KR101208055B1 (ko) * 2011-03-15 2012-12-04 주식회사 큐닉스 태양 전지용 기판 구조체 제조방법
US8129215B1 (en) 2011-04-01 2012-03-06 James P Campbell Method for producing high temperature thin film silicon layer on glass
WO2013006420A2 (en) * 2011-07-01 2013-01-10 United Solar Ovonic Llc Improved back reflector with nanocrystalline photovoltaic device
KR101194057B1 (ko) 2011-09-22 2012-10-24 한국생산기술연구원 전자빔 조사를 이용한 태양 전지의 제조 방법 및 이에 따른 태양 전지
US8853524B2 (en) 2011-10-05 2014-10-07 International Business Machines Corporation Silicon solar cell with back surface field
CN104755652B (zh) 2012-10-25 2018-01-12 韩国生产技术研究院 基于利用线性电子束使大面积非晶硅薄膜结晶化的方法的多晶硅薄膜太阳能电池的制造方法
US8987583B2 (en) 2012-12-01 2015-03-24 Ann B Campbell Variable optical density solar collector
US20140159182A1 (en) * 2012-12-06 2014-06-12 ThinSillicon Corporation Semiconductor device and method for manufacturing a semiconductor device having an undulating reflective surface of an electrode
DE102013109143A1 (de) * 2013-08-23 2015-02-26 Nts Nanotechnologysolar Photozelle, insbesondere Solarzelle sowie Verfahren zum Herstellen einer Photozelle
CN110416336B (zh) * 2019-08-05 2021-08-20 扬州工业职业技术学院 新型纳米结构薄膜太阳能电池及其制备方法
KR20220033596A (ko) * 2020-09-08 2022-03-17 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 표시 장치 및 이의 제조 방법
CN114759106B (zh) * 2021-01-12 2024-03-08 宝山钢铁股份有限公司 一种适用于内联式薄膜光伏组件的涂镀钢板及其制造方法
CN117230418A (zh) * 2023-09-15 2023-12-15 江苏杰太光电技术有限公司 一种硼掺杂发射极的制备方法、发射极以及太阳能电池

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US5714404A (en) * 1993-11-18 1998-02-03 Regents Of The University Of California Fabrication of polycrystalline thin films by pulsed laser processing
US5501745A (en) * 1994-05-31 1996-03-26 Southwest Research Institute Low temperature method for making a photovoltaic material
JPH10335684A (ja) * 1997-05-30 1998-12-18 Canon Inc 光電気変換体の製造方法
US6103138A (en) * 1998-01-21 2000-08-15 Canon Kabushiki Kaisha Silicon-system thin film, photovoltaic device, method for forming silicon-system thin film, and method for producing photovoltaic device
EP1100130B3 (de) * 1998-06-01 2008-10-29 Kaneka Corporation Silizium dünnschicht photoelektrische vorrichtung
JP2000058892A (ja) * 1998-06-01 2000-02-25 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置
AUPP699798A0 (en) * 1998-11-06 1998-12-03 Pacific Solar Pty Limited Thin films with light trapping
KR20020005815A (ko) * 2000-07-10 2002-01-18 이순종 전자 빔을 이용한 액정표시기용 비정질 실리콘 박막의결정화 방법
DE102004013833B4 (de) * 2003-03-17 2010-12-02 Kyocera Corp. Verfahren zur Herstellung eines Solarzellenmoduls

Also Published As

Publication number Publication date
US7592198B2 (en) 2009-09-22
JP4814307B2 (ja) 2011-11-16
EP1861882A1 (de) 2007-12-05
WO2006100403A1 (fr) 2006-09-28
ES2310405T3 (es) 2009-01-01
FR2883663B1 (fr) 2007-05-11
DE602006001741D1 (de) 2008-08-21
JP2008535210A (ja) 2008-08-28
US20080176357A1 (en) 2008-07-24
EP1861882B1 (de) 2008-07-09
FR2883663A1 (fr) 2006-09-29

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