ATE441211T1 - Nichtflüchtige integrierte mehrzustands- speichersysteme, die dielektrische speicherelemente verwenden - Google Patents

Nichtflüchtige integrierte mehrzustands- speichersysteme, die dielektrische speicherelemente verwenden

Info

Publication number
ATE441211T1
ATE441211T1 AT07002288T AT07002288T ATE441211T1 AT E441211 T1 ATE441211 T1 AT E441211T1 AT 07002288 T AT07002288 T AT 07002288T AT 07002288 T AT07002288 T AT 07002288T AT E441211 T1 ATE441211 T1 AT E441211T1
Authority
AT
Austria
Prior art keywords
integrated multi
volatile integrated
dielectric
memory elements
state memory
Prior art date
Application number
AT07002288T
Other languages
English (en)
Inventor
Eliyahou Harari
George Samachisa
Jack H Yuan
Daniel C Guterman
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/280,352 external-priority patent/US6925007B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE441211T1 publication Critical patent/ATE441211T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/06—Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
AT07002288T 2001-10-31 2002-10-31 Nichtflüchtige integrierte mehrzustands- speichersysteme, die dielektrische speicherelemente verwenden ATE441211T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/002,696 US6897522B2 (en) 2001-10-31 2001-10-31 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US10/161,235 US20030080370A1 (en) 2001-10-31 2002-05-31 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US10/280,352 US6925007B2 (en) 2001-10-31 2002-10-25 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements

Publications (1)

Publication Number Publication Date
ATE441211T1 true ATE441211T1 (de) 2009-09-15

Family

ID=21702020

Family Applications (2)

Application Number Title Priority Date Filing Date
AT07002289T ATE493763T1 (de) 2001-10-31 2002-10-31 Nichtflüchtige integrierte mehrzustands- speichersysteme, die dielektrische speicherelemente verwenden
AT07002288T ATE441211T1 (de) 2001-10-31 2002-10-31 Nichtflüchtige integrierte mehrzustands- speichersysteme, die dielektrische speicherelemente verwenden

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT07002289T ATE493763T1 (de) 2001-10-31 2002-10-31 Nichtflüchtige integrierte mehrzustands- speichersysteme, die dielektrische speicherelemente verwenden

Country Status (7)

Country Link
US (2) US6897522B2 (de)
JP (1) JP4846979B2 (de)
KR (1) KR101124259B1 (de)
CN (1) CN101140799B (de)
AT (2) ATE493763T1 (de)
DE (2) DE60233533D1 (de)
TW (3) TWI344195B (de)

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US20030082871A1 (en) 2003-05-01
JP4846979B2 (ja) 2011-12-28
DE60238796D1 (de) 2011-02-10
TWI351699B (en) 2011-11-01
TW200923943A (en) 2009-06-01
TWI344195B (en) 2011-06-21
CN101140799B (zh) 2011-06-08
CN101140799A (zh) 2008-03-12
TWI318786B (en) 2009-12-21
ATE493763T1 (de) 2011-01-15
US6897522B2 (en) 2005-05-24
US20030080370A1 (en) 2003-05-01
KR20100006170A (ko) 2010-01-18
TW200406887A (en) 2004-05-01
JP2005508094A (ja) 2005-03-24
KR101124259B1 (ko) 2012-04-24

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