ATE443913T1 - Magnetisches speicherzellenfeld mit benachbarter gekoppelter weichmagnetischer schicht - Google Patents

Magnetisches speicherzellenfeld mit benachbarter gekoppelter weichmagnetischer schicht

Info

Publication number
ATE443913T1
ATE443913T1 AT05392008T AT05392008T ATE443913T1 AT E443913 T1 ATE443913 T1 AT E443913T1 AT 05392008 T AT05392008 T AT 05392008T AT 05392008 T AT05392008 T AT 05392008T AT E443913 T1 ATE443913 T1 AT E443913T1
Authority
AT
Austria
Prior art keywords
layer
soft magnetic
memory cell
magnetic layer
free layer
Prior art date
Application number
AT05392008T
Other languages
English (en)
Inventor
Guo Yimin
Min Tai
Wang Pokang
Shi Xi-Zeng
Original Assignee
Headway Technologies Inc
Applied Spintronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Headway Technologies Inc, Applied Spintronics Inc filed Critical Headway Technologies Inc
Application granted granted Critical
Publication of ATE443913T1 publication Critical patent/ATE443913T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Magnetic Heads (AREA)
AT05392008T 2004-06-21 2005-06-14 Magnetisches speicherzellenfeld mit benachbarter gekoppelter weichmagnetischer schicht ATE443913T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/872,915 US6979586B2 (en) 2000-10-06 2004-06-21 Magnetic random access memory array with coupled soft adjacent magnetic layer

Publications (1)

Publication Number Publication Date
ATE443913T1 true ATE443913T1 (de) 2009-10-15

Family

ID=34942847

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05392008T ATE443913T1 (de) 2004-06-21 2005-06-14 Magnetisches speicherzellenfeld mit benachbarter gekoppelter weichmagnetischer schicht

Country Status (7)

Country Link
US (2) US6979586B2 (de)
EP (1) EP1610341B1 (de)
JP (1) JP5068939B2 (de)
KR (1) KR100741303B1 (de)
AT (1) ATE443913T1 (de)
DE (1) DE602005016749D1 (de)
TW (1) TWI291696B (de)

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US8659852B2 (en) 2008-04-21 2014-02-25 Seagate Technology Llc Write-once magentic junction memory array
US7852663B2 (en) 2008-05-23 2010-12-14 Seagate Technology Llc Nonvolatile programmable logic gates and adders
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US7826181B2 (en) 2008-11-12 2010-11-02 Seagate Technology Llc Magnetic memory with porous non-conductive current confinement layer
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Also Published As

Publication number Publication date
JP2006013498A (ja) 2006-01-12
EP1610341A3 (de) 2006-06-14
US20050280960A1 (en) 2005-12-22
JP5068939B2 (ja) 2012-11-07
TWI291696B (en) 2007-12-21
EP1610341A2 (de) 2005-12-28
KR20060046496A (ko) 2006-05-17
KR100741303B1 (ko) 2007-07-23
TW200617953A (en) 2006-06-01
DE602005016749D1 (de) 2009-11-05
US7335961B2 (en) 2008-02-26
US20040233760A1 (en) 2004-11-25
US6979586B2 (en) 2005-12-27
EP1610341B1 (de) 2009-09-23

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