ATE443937T1 - Schutzvorrichtung für integrierte schaltungsanordnung - Google Patents

Schutzvorrichtung für integrierte schaltungsanordnung

Info

Publication number
ATE443937T1
ATE443937T1 AT04744381T AT04744381T ATE443937T1 AT E443937 T1 ATE443937 T1 AT E443937T1 AT 04744381 T AT04744381 T AT 04744381T AT 04744381 T AT04744381 T AT 04744381T AT E443937 T1 ATE443937 T1 AT E443937T1
Authority
AT
Austria
Prior art keywords
transistor
pad
integrated circuit
circuit arrangement
protective device
Prior art date
Application number
AT04744381T
Other languages
English (en)
Inventor
Wolfgang Kemper
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE443937T1 publication Critical patent/ATE443937T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT04744381T 2003-06-30 2004-06-23 Schutzvorrichtung für integrierte schaltungsanordnung ATE443937T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP03101950 2003-06-30
PCT/IB2004/050973 WO2005002019A1 (en) 2003-06-30 2004-06-23 Protection circuit for an integrated circuit device

Publications (1)

Publication Number Publication Date
ATE443937T1 true ATE443937T1 (de) 2009-10-15

Family

ID=33547775

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04744381T ATE443937T1 (de) 2003-06-30 2004-06-23 Schutzvorrichtung für integrierte schaltungsanordnung

Country Status (7)

Country Link
US (1) US7787224B2 (de)
EP (1) EP1642370B1 (de)
JP (1) JP2007527188A (de)
CN (1) CN100508322C (de)
AT (1) ATE443937T1 (de)
DE (1) DE602004023293D1 (de)
WO (1) WO2005002019A1 (de)

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KR101173273B1 (ko) * 2005-07-20 2012-08-10 페어차일드코리아반도체 주식회사 쿨링 장치 제어기 및 쿨링 시스템
US7672102B2 (en) 2006-12-31 2010-03-02 Texas Instruments Incorporated Electrical overstress protection
US7710695B2 (en) * 2007-06-04 2010-05-04 Via Technologies, Inc. Integrated circuit and electrostatic discharge protection circuit
TWI358181B (en) * 2007-12-24 2012-02-11 Princeton Technology Corp Esd protecting circuit
US7813093B2 (en) * 2008-02-15 2010-10-12 Analog Devices, Inc. Output driver with overvoltage protection
US20100149884A1 (en) * 2008-11-11 2010-06-17 Stmicroelectronics Pvt. Ltd. Reduction of power consumption in a memory device during sleep mode of operation
JP5486962B2 (ja) * 2009-04-28 2014-05-07 株式会社メガチップス 半導体集積回路
JP5452155B2 (ja) * 2009-10-06 2014-03-26 東芝シュネデール・インバータ株式会社 サージ電圧抑制装置およびモータ制御装置
KR20140129159A (ko) * 2012-02-15 2014-11-06 퀄컴 인코포레이티드 차동 입력/출력 인터페이스들에 대한 서지 보호
US8724271B2 (en) * 2012-03-08 2014-05-13 Globalfoundries Singapore Pte. Ltd. ESD-robust I/O driver circuits
CN103969544B (zh) * 2014-03-04 2018-02-16 深圳博用科技有限公司 一种集成电路高压引脚连通性测试方法
CN104821312B (zh) * 2015-05-19 2017-12-15 中国兵器工业集团第二一四研究所苏州研发中心 一种开漏输出端口的esd保护电路
EP3357090B1 (de) * 2015-09-29 2020-06-17 TDK Corporation Vorrichtung zum schutz vor elektrostatischer entladung und schaltvorrichtung
US10067554B2 (en) 2016-05-26 2018-09-04 Silicon Laboratories Inc. VCONN pull-down circuits and related methods for USB type-C connections
US9800233B1 (en) * 2016-05-26 2017-10-24 Silicon Laboratories Inc. Voltage clamp circuits and related methods
TWI658668B (zh) * 2018-07-06 2019-05-01 世界先進積體電路股份有限公司 靜電放電保護電路
US10784252B2 (en) 2018-09-20 2020-09-22 Vanguard International Semiconductor Corporation Electrostatic discharge protection circuit
TWI828638B (zh) * 2018-11-06 2024-01-11 聯華電子股份有限公司 靜電防護結構
KR102161796B1 (ko) * 2020-03-02 2020-10-05 주식회사 아나패스 전기적 스트레스 보호회로 및 이를 포함하는 전자 장치
US11563319B1 (en) * 2021-09-30 2023-01-24 Stmicroelectronics S.R.L. Stand-alone safety isolated area with integrated protection for supply and signal lines

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US4612497A (en) * 1985-09-13 1986-09-16 Motorola, Inc. MOS current limiting output circuit
US4802054A (en) * 1987-03-13 1989-01-31 Motorola, Inc. Input protection for an integrated circuit
KR950007572B1 (ko) * 1992-03-31 1995-07-12 삼성전자주식회사 Esd 보호장치
US6078487A (en) * 1992-03-31 2000-06-20 Digital Equipment Corporation Electro-static discharge protection device having a modulated control input terminal
EP0624844A2 (de) * 1993-05-11 1994-11-17 International Business Machines Corporation Völlig integrierte Cache-Speicherarchitektur
US5617283A (en) * 1994-07-01 1997-04-01 Digital Equipment Corporation Self-referencing modulation circuit for CMOS integrated circuit electrostatic discharge protection clamps
US5581199A (en) * 1995-01-04 1996-12-03 Xilinx, Inc. Interconnect architecture for field programmable gate array using variable length conductors
JPH09162713A (ja) * 1995-12-11 1997-06-20 Mitsubishi Electric Corp 半導体集積回路
JP3144308B2 (ja) * 1996-08-01 2001-03-12 日本電気株式会社 半導体装置
TW359025B (en) * 1997-10-07 1999-05-21 Winbond Electronics Corp Static discharge protection circuit having silicon control rectifier
TW359887B (en) * 1997-11-28 1999-06-01 Winbond Electronics Corp IC interline protective circuit
US6501632B1 (en) * 1999-08-06 2002-12-31 Sarnoff Corporation Apparatus for providing high performance electrostatic discharge protection
US6522511B1 (en) * 2000-06-15 2003-02-18 Sigmatel, Inc. High speed electrostatic discharge protection circuit
US6912109B1 (en) * 2000-06-26 2005-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Power-rail ESD clamp circuits with well-triggered PMOS
TW473977B (en) * 2000-10-27 2002-01-21 Vanguard Int Semiconduct Corp Low-voltage triggering electrostatic discharge protection device and the associated circuit
CN1153291C (zh) * 2001-03-28 2004-06-09 华邦电子股份有限公司 集成电路的静电保护电路
TW518736B (en) 2001-09-06 2003-01-21 Faraday Tech Corp Gate-driven or gate-coupled electrostatic discharge protection circuit
US6704180B2 (en) * 2002-04-25 2004-03-09 Medtronic, Inc. Low input capacitance electrostatic discharge protection circuit utilizing feedback
TW536803B (en) * 2002-06-19 2003-06-11 Macronix Int Co Ltd Gate equivalent potential circuit and method for input/output electrostatic discharge protection

Also Published As

Publication number Publication date
US20060268473A1 (en) 2006-11-30
JP2007527188A (ja) 2007-09-20
CN1816955A (zh) 2006-08-09
WO2005002019A1 (en) 2005-01-06
US7787224B2 (en) 2010-08-31
EP1642370A1 (de) 2006-04-05
EP1642370B1 (de) 2009-09-23
DE602004023293D1 (de) 2009-11-05
CN100508322C (zh) 2009-07-01

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