ATE444846T1 - Flache reflektierende rückwand eines lichtventils und verfahren zu dessen herstellung - Google Patents

Flache reflektierende rückwand eines lichtventils und verfahren zu dessen herstellung

Info

Publication number
ATE444846T1
ATE444846T1 AT99967562T AT99967562T ATE444846T1 AT E444846 T1 ATE444846 T1 AT E444846T1 AT 99967562 T AT99967562 T AT 99967562T AT 99967562 T AT99967562 T AT 99967562T AT E444846 T1 ATE444846 T1 AT E444846T1
Authority
AT
Austria
Prior art keywords
etch
light valve
substrate
layer
fill
Prior art date
Application number
AT99967562T
Other languages
English (en)
Inventor
Jacob Haskell
Rong Hsu
Original Assignee
Aurora Sys Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/219,617 external-priority patent/US6252999B1/en
Priority claimed from US09/219,579 external-priority patent/US6277748B1/en
Application filed by Aurora Sys Inc filed Critical Aurora Sys Inc
Application granted granted Critical
Publication of ATE444846T1 publication Critical patent/ATE444846T1/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Electroluminescent Light Sources (AREA)
AT99967562T 1998-12-23 1999-12-23 Flache reflektierende rückwand eines lichtventils und verfahren zu dessen herstellung ATE444846T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/219,617 US6252999B1 (en) 1998-12-23 1998-12-23 Planar reflective light valve backplane
US09/219,579 US6277748B1 (en) 1998-12-23 1998-12-23 Method for manufacturing a planar reflective light valve backplane
PCT/US1999/030754 WO2000037248A1 (en) 1998-12-23 1999-12-23 Planar reflective light valve backplane and method for manufacturing the same

Publications (1)

Publication Number Publication Date
ATE444846T1 true ATE444846T1 (de) 2009-10-15

Family

ID=26914033

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99967562T ATE444846T1 (de) 1998-12-23 1999-12-23 Flache reflektierende rückwand eines lichtventils und verfahren zu dessen herstellung

Country Status (8)

Country Link
EP (1) EP1152886B1 (de)
JP (1) JP2002532768A (de)
CN (2) CN1515931A (de)
AT (1) ATE444846T1 (de)
AU (1) AU2382400A (de)
CA (1) CA2355626C (de)
DE (1) DE69941519D1 (de)
WO (1) WO2000037248A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011133603A (ja) 2009-12-24 2011-07-07 Seiko Epson Corp 電気光学装置、電気光学装置の製造方法および電子機器
JP5621531B2 (ja) * 2010-11-15 2014-11-12 セイコーエプソン株式会社 電気光学装置及び投射型表示装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2860226B2 (ja) * 1993-06-07 1999-02-24 シャープ株式会社 液晶表示装置およびその製造方法
JPH0745616A (ja) * 1993-07-29 1995-02-14 Nec Corp 半導体装置の製造方法
JPH07209665A (ja) * 1993-11-30 1995-08-11 Victor Co Of Japan Ltd 空間光変調装置
US5486485A (en) * 1994-02-18 1996-01-23 Philip Electronics North America Corporation Method of manufacturing a reflective display
US5560802A (en) 1995-03-03 1996-10-01 Texas Instruments Incorporated Selective CMP of in-situ deposited multilayer films to enhance nonplanar step height reduction
JP3028754B2 (ja) * 1995-06-30 2000-04-04 日本ビクター株式会社 液晶表示装置、液晶表示装置の電極構造及びその形成方法
JP3108861B2 (ja) * 1995-06-30 2000-11-13 キヤノン株式会社 アクティブマトリクス基板、該基板を用いた表示装置、及びこれらの製造方法
JP3224012B2 (ja) * 1995-07-28 2001-10-29 日本ビクター株式会社 反射型画像表示装置
JPH0968718A (ja) * 1995-09-01 1997-03-11 Pioneer Video Corp 反射型液晶表示装置
JP3934201B2 (ja) * 1997-03-24 2007-06-20 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその作製方法
JP4302194B2 (ja) * 1997-04-25 2009-07-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3980118B2 (ja) * 1997-04-26 2007-09-26 株式会社半導体エネルギー研究所 液晶表示装置および電子デバイス
US5868951A (en) * 1997-05-09 1999-02-09 University Technology Corporation Electro-optical device and method
US6124912A (en) * 1997-06-09 2000-09-26 National Semiconductor Corporation Reflectance enhancing thin film stack in which pairs of dielectric layers are on a reflector and liquid crystal is on the dielectric layers

Also Published As

Publication number Publication date
DE69941519D1 (de) 2009-11-19
EP1152886A1 (de) 2001-11-14
CN1331629A (zh) 2002-01-16
WO2000037248A1 (en) 2000-06-29
AU2382400A (en) 2000-07-12
EP1152886A4 (de) 2004-05-12
JP2002532768A (ja) 2002-10-02
CN1132736C (zh) 2003-12-31
CN1515931A (zh) 2004-07-28
CA2355626C (en) 2008-07-15
CA2355626A1 (en) 2000-06-29
EP1152886B1 (de) 2009-10-07

Similar Documents

Publication Publication Date Title
US5550088A (en) Fabrication process for a self-aligned optical subassembly
DE60144278D1 (de) Herstellungsprozesse für substrate mit mehreren tiefen
WO1998030913A3 (en) A fiducial for aligning an integrated circuit die
EP1069458A3 (de) Verfahren zur Herstellung einer reflektiven Flüssigkristall-Anzeigevorrichtung
TW337593B (en) Forming of holes in semiconductor components
ATE444846T1 (de) Flache reflektierende rückwand eines lichtventils und verfahren zu dessen herstellung
TW343364B (en) Process for producing twin gate oxide elements
JPH01292829A (ja) 半導体装置の製造方法
TW346661B (en) A method for manufacturing a semiconductor device
JPH02262338A (ja) 半導体装置の製造方法
KR970053590A (ko) 반도체 장치의 제조 방법
WO2003005411A3 (de) Verfahren zur erzeugung einer stufenförmigen struktur auf einem substrat
TW350988B (en) Manufacturing method of forming metal layout by means of hard mask
KR970009613B1 (en) Multi-level metalizing method of semiconductor device
FR3142601B1 (fr) Fabrication d'une tranchée isolante
KR20030092569A (ko) 반도체 소자의 제조 방법
KR970052786A (ko) 금속배선의 절연막 형성방법
TW263599B (en) Method for preventing etching conductive layer from forming notching
KR980005295A (ko) 정렬 마크(mark) 및 그 제조방법
TW290708B (en) The manufacturing method of phase-shifted photo-mask
TW358170B (en) Semi-transparent phase shift mask structure and the manufacturing method
TW353785B (en) Method of producing different gate oxides
JPH0314257A (ja) 半導体装置の製造方法
KR960008525B1 (en) Manufacturing method of metal wiring layer pattern
KR970077196A (ko) 반도체장치의 금속 배선 형성방법

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties