ATE445034T1 - Integriertes metallabscheidungs- und planarisierungsverfahren und vorrichtung dafür - Google Patents

Integriertes metallabscheidungs- und planarisierungsverfahren und vorrichtung dafür

Info

Publication number
ATE445034T1
ATE445034T1 AT03783387T AT03783387T ATE445034T1 AT E445034 T1 ATE445034 T1 AT E445034T1 AT 03783387 T AT03783387 T AT 03783387T AT 03783387 T AT03783387 T AT 03783387T AT E445034 T1 ATE445034 T1 AT E445034T1
Authority
AT
Austria
Prior art keywords
electroplating
substrate
electroetching
pad
metal deposition
Prior art date
Application number
AT03783387T
Other languages
English (en)
Inventor
Laertis Economikos
Hariklia Deligianni
John Cotte
Henry Grabarz
Bomy Chen
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE445034T1 publication Critical patent/ATE445034T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S205/00—Electrolysis: processes, compositions used therein, and methods of preparing the compositions
    • Y10S205/917—Treatment of workpiece between coating steps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
AT03783387T 2002-11-14 2003-11-14 Integriertes metallabscheidungs- und planarisierungsverfahren und vorrichtung dafür ATE445034T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/294,200 US6773570B2 (en) 2002-11-14 2002-11-14 Integrated plating and planarization process and apparatus therefor
PCT/US2003/036208 WO2004046426A1 (en) 2002-11-14 2003-11-14 Integrated plating and planarization process and apparatus therefor

Publications (1)

Publication Number Publication Date
ATE445034T1 true ATE445034T1 (de) 2009-10-15

Family

ID=32296926

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03783387T ATE445034T1 (de) 2002-11-14 2003-11-14 Integriertes metallabscheidungs- und planarisierungsverfahren und vorrichtung dafür

Country Status (9)

Country Link
US (1) US6773570B2 (de)
EP (1) EP1560949B1 (de)
JP (1) JP4398376B2 (de)
KR (1) KR100687129B1 (de)
CN (1) CN100465352C (de)
AT (1) ATE445034T1 (de)
AU (1) AU2003290804A1 (de)
DE (1) DE60329621D1 (de)
WO (1) WO2004046426A1 (de)

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US8475636B2 (en) 2008-11-07 2013-07-02 Novellus Systems, Inc. Method and apparatus for electroplating
US20060113192A1 (en) * 2003-01-23 2006-06-01 Keiichi Kurashina Plating device and planting method
US20060003566A1 (en) * 2004-06-30 2006-01-05 Ismail Emesh Methods and apparatuses for semiconductor fabrication utilizing through-wafer interconnects
US9822461B2 (en) 2006-08-16 2017-11-21 Novellus Systems, Inc. Dynamic current distribution control apparatus and method for wafer electroplating
US8323460B2 (en) * 2007-06-20 2012-12-04 Lam Research Corporation Methods and systems for three-dimensional integrated circuit through hole via gapfill and overburden removal
CN100582314C (zh) * 2007-09-10 2010-01-20 厦门致力金刚石工具有限公司 抛镀机
US8858774B2 (en) 2008-11-07 2014-10-14 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile
DE102009003072A1 (de) * 2009-05-13 2010-11-18 Robert Bosch Gmbh Vorrichtung und Verfahren zum gleichzeitigen Be- oder Entschichten einer Mehrzahl von Werkstücken und Werkstück
KR20130075765A (ko) * 2010-06-15 2013-07-05 도쿄엘렉트론가부시키가이샤 반도체 장치의 제조 방법 및 반도체 장치
US8518817B2 (en) 2010-09-22 2013-08-27 International Business Machines Corporation Method of electrolytic plating and semiconductor device fabrication
US9909228B2 (en) 2012-11-27 2018-03-06 Lam Research Corporation Method and apparatus for dynamic current distribution control during electroplating
US9670588B2 (en) 2013-05-01 2017-06-06 Lam Research Corporation Anisotropic high resistance ionic current source (AHRICS)
JP6198456B2 (ja) * 2013-05-20 2017-09-20 東京エレクトロン株式会社 基板の処理方法及びテンプレート
CN104742007B (zh) * 2013-12-30 2017-08-25 中芯国际集成电路制造(北京)有限公司 化学机械研磨装置和化学机械研磨方法
US9752248B2 (en) 2014-12-19 2017-09-05 Lam Research Corporation Methods and apparatuses for dynamically tunable wafer-edge electroplating
US9567685B2 (en) 2015-01-22 2017-02-14 Lam Research Corporation Apparatus and method for dynamic control of plated uniformity with the use of remote electric current
US9816194B2 (en) 2015-03-19 2017-11-14 Lam Research Corporation Control of electrolyte flow dynamics for uniform electroplating
US10014170B2 (en) 2015-05-14 2018-07-03 Lam Research Corporation Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity
US9988733B2 (en) 2015-06-09 2018-06-05 Lam Research Corporation Apparatus and method for modulating azimuthal uniformity in electroplating
TWI663294B (zh) * 2017-12-15 2019-06-21 Chipbond Technology Corporation 電鍍裝置及其壓力艙
JP7768883B2 (ja) * 2020-01-09 2025-11-12 ラム リサーチ コーポレーション 半導体金属配線の高速３ｄ金属印刷
US12116689B2 (en) * 2021-01-26 2024-10-15 Seagate Technology Llc Selective screen electroplating
KR102967771B1 (ko) * 2024-10-14 2026-05-20 (재)한국나노기술원 반도체 제조 공정에서 화학적 기계적 평탄화 방법 및 그 장치

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US5911619A (en) 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US6004880A (en) 1998-02-20 1999-12-21 Lsi Logic Corporation Method of single step damascene process for deposition and global planarization
US6328872B1 (en) 1999-04-03 2001-12-11 Nutool, Inc. Method and apparatus for plating and polishing a semiconductor substrate
US6413388B1 (en) * 2000-02-23 2002-07-02 Nutool Inc. Pad designs and structures for a versatile materials processing apparatus
US6270646B1 (en) 1999-12-28 2001-08-07 International Business Machines Corporation Electroplating apparatus and method using a compressible contact
US6454916B1 (en) * 2000-01-05 2002-09-24 Advanced Micro Devices, Inc. Selective electroplating with direct contact chemical polishing
US6478936B1 (en) * 2000-05-11 2002-11-12 Nutool Inc. Anode assembly for plating and planarizing a conductive layer
US6793797B2 (en) * 2002-03-26 2004-09-21 Taiwan Semiconductor Manufacturing Co., Ltd Method for integrating an electrodeposition and electro-mechanical polishing process

Also Published As

Publication number Publication date
WO2004046426A1 (en) 2004-06-03
EP1560949A1 (de) 2005-08-10
JP4398376B2 (ja) 2010-01-13
CN1705774A (zh) 2005-12-07
US20040094427A1 (en) 2004-05-20
KR100687129B1 (ko) 2007-02-27
JP2006506523A (ja) 2006-02-23
EP1560949A4 (de) 2007-02-28
EP1560949B1 (de) 2009-10-07
AU2003290804A1 (en) 2004-06-15
CN100465352C (zh) 2009-03-04
US6773570B2 (en) 2004-08-10
KR20050067180A (ko) 2005-06-30
DE60329621D1 (de) 2009-11-19

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