ATE281277T1 - Verfahren und vorrichtung zum plattieren und polieren eines halbleiterbauelements - Google Patents

Verfahren und vorrichtung zum plattieren und polieren eines halbleiterbauelements

Info

Publication number
ATE281277T1
ATE281277T1 AT00918491T AT00918491T ATE281277T1 AT E281277 T1 ATE281277 T1 AT E281277T1 AT 00918491 T AT00918491 T AT 00918491T AT 00918491 T AT00918491 T AT 00918491T AT E281277 T1 ATE281277 T1 AT E281277T1
Authority
AT
Austria
Prior art keywords
polishing
conductive material
substrate
plating
present
Prior art date
Application number
AT00918491T
Other languages
English (en)
Inventor
Homayoun Talieh
Cyprian Emeka Uzoh
Original Assignee
Nutool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nutool Inc filed Critical Nutool Inc
Application granted granted Critical
Publication of ATE281277T1 publication Critical patent/ATE281277T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C25D17/14—Electrodes, e.g. composition, counter electrode for pad-plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/04—Electroplating with moving electrodes
    • C25D5/06—Brush or pad plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/22—Electroplating combined with mechanical treatment during the deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT00918491T 1999-04-03 2000-03-29 Verfahren und vorrichtung zum plattieren und polieren eines halbleiterbauelements ATE281277T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/285,621 US6328872B1 (en) 1999-04-03 1999-04-03 Method and apparatus for plating and polishing a semiconductor substrate
PCT/US2000/008336 WO2000059682A1 (en) 1999-04-03 2000-03-29 Method and apparatus for plating and polishing a semiconductor substrate

Publications (1)

Publication Number Publication Date
ATE281277T1 true ATE281277T1 (de) 2004-11-15

Family

ID=23095034

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00918491T ATE281277T1 (de) 1999-04-03 2000-03-29 Verfahren und vorrichtung zum plattieren und polieren eines halbleiterbauelements

Country Status (10)

Country Link
US (3) US6328872B1 (de)
EP (1) EP1169162B1 (de)
JP (1) JP2002541655A (de)
KR (1) KR100778131B1 (de)
CN (1) CN1268470C (de)
AT (1) ATE281277T1 (de)
AU (1) AU3929200A (de)
DE (1) DE60015513T2 (de)
TW (1) TW506022B (de)
WO (1) WO2000059682A1 (de)

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EP1169162A1 (de) 2002-01-09
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US7309406B2 (en) 2007-12-18
KR100778131B1 (ko) 2007-11-21
AU3929200A (en) 2000-10-23
US20050034976A1 (en) 2005-02-17
CN1268470C (zh) 2006-08-09
DE60015513T2 (de) 2006-04-06
WO2000059682A1 (en) 2000-10-12
KR20010111286A (ko) 2001-12-17
EP1169162B1 (de) 2004-11-03
US20020011417A1 (en) 2002-01-31
US6797132B2 (en) 2004-09-28
CN1351531A (zh) 2002-05-29
JP2002541655A (ja) 2002-12-03
DE60015513D1 (de) 2004-12-09

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