ATE445830T1 - Verfahren und vorrichtung zur bestimmung der temperatur eines halbleitersubstrats - Google Patents

Verfahren und vorrichtung zur bestimmung der temperatur eines halbleitersubstrats

Info

Publication number
ATE445830T1
ATE445830T1 AT07735544T AT07735544T ATE445830T1 AT E445830 T1 ATE445830 T1 AT E445830T1 AT 07735544 T AT07735544 T AT 07735544T AT 07735544 T AT07735544 T AT 07735544T AT E445830 T1 ATE445830 T1 AT E445830T1
Authority
AT
Austria
Prior art keywords
temperature
semiconductor substrate
resonance circuit
determining
irradiated
Prior art date
Application number
AT07735544T
Other languages
English (en)
Inventor
Srdjan Kordic
Meindert M Lunenborg
Jean-Philippe Jacquemin
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE445830T1 publication Critical patent/ATE445830T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/32—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using change of resonant frequency of a crystal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/34—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using capacitative elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
AT07735544T 2006-04-20 2007-04-19 Verfahren und vorrichtung zur bestimmung der temperatur eines halbleitersubstrats ATE445830T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06300383 2006-04-20
PCT/IB2007/051408 WO2007122560A2 (en) 2006-04-20 2007-04-19 Semiconductor substrate temperature determination

Publications (1)

Publication Number Publication Date
ATE445830T1 true ATE445830T1 (de) 2009-10-15

Family

ID=38529969

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07735544T ATE445830T1 (de) 2006-04-20 2007-04-19 Verfahren und vorrichtung zur bestimmung der temperatur eines halbleitersubstrats

Country Status (7)

Country Link
US (1) US8066430B2 (de)
EP (1) EP2010880B1 (de)
JP (1) JP2009528692A (de)
CN (1) CN101427116B (de)
AT (1) ATE445830T1 (de)
DE (1) DE602007002805D1 (de)
WO (1) WO2007122560A2 (de)

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JP5400560B2 (ja) * 2009-10-16 2014-01-29 アズビル株式会社 静電容量型センサ
US8911145B2 (en) 2009-11-20 2014-12-16 The United States Of America As Represented By The Secretary Of The Navy Method to measure the characteristics in an electrical component
US9121771B2 (en) * 2010-03-16 2015-09-01 The Penn State Research Foundation Methods and apparatus for ultra-sensitive temperature detection using resonant devices
FR2977984B1 (fr) 2011-07-13 2013-07-05 St Microelectronics Rousset Generateur thermoelectrique integre, et circuit integre comprenant un tel generateur
US8987843B2 (en) 2012-11-06 2015-03-24 International Business Machines Corporation Mapping density and temperature of a chip, in situ
CN103090989B (zh) * 2013-01-18 2015-02-18 北京瑞恒超高压电器研究所(普通合伙) 一种接触式转子测温的方法及装置
RU2623684C2 (ru) * 2013-05-03 2017-06-28 3М Инновейтив Пропертиз Компани Система для мониторинга температуры электрического проводника
US10139288B2 (en) 2013-09-25 2018-11-27 3M Innovative Properties Company Compositions, apparatus and methods for capacitive temperature sensing
US20160121452A1 (en) * 2014-10-31 2016-05-05 Ebara Corporation Polishing apparatus and polishing method
CN106017710B (zh) * 2015-03-30 2020-01-07 意法半导体股份有限公司 包含温度传感器的集成电子器件和感测方法
US10318396B2 (en) * 2015-09-26 2019-06-11 Intel Corporation Technologies for temperature measurement of a processor

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145141A (ja) * 1982-02-24 1983-08-29 Fujitsu Ltd ジヨセフソン素子の特性検査方式
DE4322650A1 (de) * 1993-07-07 1995-01-12 Siemens Ag Temperatursensor mit einem p-n-Übergang
RU2122713C1 (ru) * 1995-08-08 1998-11-27 Винницкий государственный технический университет Полупроводниковый датчик температуры
US6092926A (en) * 1998-09-17 2000-07-25 International Business Machines Corporation Thermal monitoring system for semiconductor devices
US6328802B1 (en) * 1999-09-14 2001-12-11 Lsi Logic Corporation Method and apparatus for determining temperature of a semiconductor wafer during fabrication thereof
JP2001242014A (ja) * 2000-02-29 2001-09-07 Tokyo Electron Ltd 基板の温度測定方法および処理方法
US6864108B1 (en) * 2003-10-20 2005-03-08 Texas Instruments Incorporated Measurement of wafer temperature in semiconductor processing chambers
JP4765252B2 (ja) * 2004-01-13 2011-09-07 株式会社豊田自動織機 温度検出機能付き半導体装置
JP3810411B2 (ja) * 2004-01-23 2006-08-16 Ｎｅｃエレクトロニクス株式会社 集積回路装置
US7977609B2 (en) * 2005-12-22 2011-07-12 Tokyo Electron Limited Temperature measuring device using oscillating frequency signals
US20090085031A1 (en) * 2006-03-16 2009-04-02 Tokyo Electron Limited Wafer-Shaped Measuring Apparatus and Method for Manufacturing the Same
US7803644B2 (en) * 2007-09-12 2010-09-28 International Business Machines Corporation Across reticle variation modeling and related reticle
JP2009259960A (ja) * 2008-04-15 2009-11-05 Sumco Corp 半導体基板の重金属検出方法
JP2010192649A (ja) * 2009-02-18 2010-09-02 Philtech Inc 温度検出基板

Also Published As

Publication number Publication date
US8066430B2 (en) 2011-11-29
EP2010880A2 (de) 2009-01-07
WO2007122560A2 (en) 2007-11-01
EP2010880B1 (de) 2009-10-14
CN101427116B (zh) 2011-08-17
DE602007002805D1 (de) 2009-11-26
US20090175313A1 (en) 2009-07-09
JP2009528692A (ja) 2009-08-06
WO2007122560A3 (en) 2008-01-10
CN101427116A (zh) 2009-05-06

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