ATE447538T1 - Soi/glas-verfahren zur herstellung von dünnen mikrobearbeiteten strukturen - Google Patents

Soi/glas-verfahren zur herstellung von dünnen mikrobearbeiteten strukturen

Info

Publication number
ATE447538T1
ATE447538T1 AT01993334T AT01993334T ATE447538T1 AT E447538 T1 ATE447538 T1 AT E447538T1 AT 01993334 T AT01993334 T AT 01993334T AT 01993334 T AT01993334 T AT 01993334T AT E447538 T1 ATE447538 T1 AT E447538T1
Authority
AT
Austria
Prior art keywords
layer
silicon
soi
wafer
recesses
Prior art date
Application number
AT01993334T
Other languages
English (en)
Inventor
Cleopatra Cabuz
Jeffrey Ridley
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Application granted granted Critical
Publication of ATE447538T1 publication Critical patent/ATE447538T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/019—Bonding or gluing multiple substrate layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Glass Compositions (AREA)
AT01993334T 2000-12-27 2001-12-20 Soi/glas-verfahren zur herstellung von dünnen mikrobearbeiteten strukturen ATE447538T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/748,488 US6582985B2 (en) 2000-12-27 2000-12-27 SOI/glass process for forming thin silicon micromachined structures
PCT/US2001/050089 WO2002057180A2 (en) 2000-12-27 2001-12-20 Soi/glass process for forming thin silicon micromachined structures

Publications (1)

Publication Number Publication Date
ATE447538T1 true ATE447538T1 (de) 2009-11-15

Family

ID=25009658

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01993334T ATE447538T1 (de) 2000-12-27 2001-12-20 Soi/glas-verfahren zur herstellung von dünnen mikrobearbeiteten strukturen

Country Status (6)

Country Link
US (1) US6582985B2 (de)
EP (1) EP1345844B1 (de)
AT (1) ATE447538T1 (de)
DE (1) DE60140379D1 (de)
TW (1) TW521060B (de)
WO (1) WO2002057180A2 (de)

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US7012322B2 (en) * 2003-12-22 2006-03-14 Honeywell International Inc. Method for reducing harmonic distortion in comb drive devices
US7632361B2 (en) * 2004-05-06 2009-12-15 Tini Alloy Company Single crystal shape memory alloy devices and methods
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US7763342B2 (en) * 2005-03-31 2010-07-27 Tini Alloy Company Tear-resistant thin film methods of fabrication
US7527997B2 (en) * 2005-04-08 2009-05-05 The Research Foundation Of State University Of New York MEMS structure with anodically bonded silicon-on-insulator substrate
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US8584767B2 (en) 2007-01-25 2013-11-19 Tini Alloy Company Sprinkler valve with active actuation
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JP4455618B2 (ja) * 2007-06-26 2010-04-21 株式会社東芝 半導体装置の製造方法
US7690254B2 (en) * 2007-07-26 2010-04-06 Honeywell International Inc. Sensor with position-independent drive electrodes in multi-layer silicon on insulator substrate
US8007674B2 (en) 2007-07-30 2011-08-30 Tini Alloy Company Method and devices for preventing restenosis in cardiovascular stents
WO2009073609A1 (en) 2007-11-30 2009-06-11 Tini Alloy Company Biocompatible copper-based single-crystal shape memory alloys
US7842143B2 (en) * 2007-12-03 2010-11-30 Tini Alloy Company Hyperelastic shape setting devices and fabrication methods
US8382917B2 (en) 2007-12-03 2013-02-26 Ormco Corporation Hyperelastic shape setting devices and fabrication methods
US8187902B2 (en) 2008-07-09 2012-05-29 The Charles Stark Draper Laboratory, Inc. High performance sensors and methods for forming the same
CN101447369B (zh) * 2008-12-25 2011-11-09 北京大学 一种基于金属钛的mems机械继电器的制备方法
US11040230B2 (en) 2012-08-31 2021-06-22 Tini Alloy Company Fire sprinkler valve actuator
US10124197B2 (en) 2012-08-31 2018-11-13 TiNi Allot Company Fire sprinkler valve actuator
KR101942967B1 (ko) * 2012-12-12 2019-01-28 삼성전자주식회사 실록산계 단량체를 이용한 접합 기판 구조체 및 그 제조방법
US9837935B2 (en) * 2013-10-29 2017-12-05 Honeywell International Inc. All-silicon electrode capacitive transducer on a glass substrate
CN105645347B (zh) * 2014-11-18 2017-08-08 无锡华润上华半导体有限公司 体硅微加工工艺的定位方法
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US11056382B2 (en) * 2018-03-19 2021-07-06 Globalfoundries U.S. Inc. Cavity formation within and under semiconductor devices
CN115480387A (zh) * 2022-09-26 2022-12-16 欧梯恩智能科技(苏州)有限公司 可调滤波器及可调滤波器的制备方法

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Also Published As

Publication number Publication date
WO2002057180A2 (en) 2002-07-25
DE60140379D1 (de) 2009-12-17
US20020081821A1 (en) 2002-06-27
WO2002057180A3 (en) 2003-03-13
EP1345844A2 (de) 2003-09-24
TW521060B (en) 2003-02-21
EP1345844B1 (de) 2009-11-04
US6582985B2 (en) 2003-06-24

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