ATE450055T1 - Solarzelle mit einer integrierten monolitisch gewachsenen bypassdiode - Google Patents

Solarzelle mit einer integrierten monolitisch gewachsenen bypassdiode

Info

Publication number
ATE450055T1
ATE450055T1 AT99925702T AT99925702T ATE450055T1 AT E450055 T1 ATE450055 T1 AT E450055T1 AT 99925702 T AT99925702 T AT 99925702T AT 99925702 T AT99925702 T AT 99925702T AT E450055 T1 ATE450055 T1 AT E450055T1
Authority
AT
Austria
Prior art keywords
solar cell
bypass diode
monolitic
integrated
contact
Prior art date
Application number
AT99925702T
Other languages
English (en)
Inventor
Frank Ho
Milton Yeh
Chaw-Long Chu
Peter Iles
Original Assignee
Emcore Solar Power Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Emcore Solar Power Inc filed Critical Emcore Solar Power Inc
Priority claimed from PCT/US1999/011171 external-priority patent/WO1999062125A1/en
Application granted granted Critical
Publication of ATE450055T1 publication Critical patent/ATE450055T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/20—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/70—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes
    • H10F19/75—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
AT99925702T 1998-05-28 1999-05-19 Solarzelle mit einer integrierten monolitisch gewachsenen bypassdiode ATE450055T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8720698P 1998-05-28 1998-05-28
PCT/US1999/011171 WO1999062125A1 (en) 1998-05-28 1999-05-19 Solar cell having an integral monolithically grown bypass diode

Publications (1)

Publication Number Publication Date
ATE450055T1 true ATE450055T1 (de) 2009-12-15

Family

ID=41396992

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99925702T ATE450055T1 (de) 1998-05-28 1999-05-19 Solarzelle mit einer integrierten monolitisch gewachsenen bypassdiode

Country Status (5)

Country Link
EP (2) EP1443566B1 (de)
JP (1) JP2002517098A (de)
AT (1) ATE450055T1 (de)
AU (1) AU4193899A (de)
DE (1) DE69941667D1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2334526T3 (es) * 1998-05-28 2010-03-11 Emcore Solar Power, Inc. Procedimiento y aparato para aumentar la sensibilidad de un receptor de satelite de posicionamiento global.
US6680432B2 (en) 2001-10-24 2004-01-20 Emcore Corporation Apparatus and method for optimizing the efficiency of a bypass diode in multijunction solar cells
US6864414B2 (en) 2001-10-24 2005-03-08 Emcore Corporation Apparatus and method for integral bypass diode in solar cells
DE102004023856B4 (de) * 2004-05-12 2006-07-13 Rwe Space Solar Power Gmbh Solarzelle mit integrierter Schutzdiode und zusätzlich auf dieser angeordneten Tunneldiode
JP4849786B2 (ja) * 2004-08-30 2012-01-11 シャープ株式会社 多接合型化合物太陽電池およびその製造方法
JP5341297B2 (ja) * 2005-11-17 2013-11-13 シャープ株式会社 化合物単結晶太陽電池および化合物単結晶太陽電池の製造方法
JP4868746B2 (ja) * 2005-02-16 2012-02-01 シャープ株式会社 薄膜化合物太陽電池およびその製造方法
JP5096336B2 (ja) * 2005-09-01 2012-12-12 コナルカ テクノロジーズ インコーポレイテッド バイパスダイオードと一体化した光電池を備えるシステム
US7732705B2 (en) * 2005-10-11 2010-06-08 Emcore Solar Power, Inc. Reliable interconnection of solar cells including integral bypass diode
US7687707B2 (en) * 2005-11-16 2010-03-30 Emcore Solar Power, Inc. Via structures in solar cells with bypass diode
JP4290747B2 (ja) 2006-06-23 2009-07-08 シャープ株式会社 光電変換素子およびインターコネクタ付き光電変換素子
US7842881B2 (en) * 2006-10-19 2010-11-30 Emcore Solar Power, Inc. Solar cell structure with localized doping in cap layer
JP2015188306A (ja) * 2014-03-13 2015-10-29 石川県 太陽電池回路の検査装置及び検査方法
DE102015002513A1 (de) * 2015-03-02 2016-09-08 Azur Space Solar Power Gmbh Solarzellenvorrichtung
US11329177B2 (en) 2018-11-08 2022-05-10 Swift Solar Inc Stable perovskite module interconnects
US11631777B2 (en) 2019-03-11 2023-04-18 Swift Solar Inc. Integration of bypass diodes within thin film photovoltaic module interconnects
JP7059983B2 (ja) * 2019-06-13 2022-04-26 信越半導体株式会社 電子デバイス及びその製造方法
CN112825337B (zh) * 2019-11-21 2023-07-21 江苏宜兴德融科技有限公司 柔性太阳能电池阵
US12094663B2 (en) 2021-09-30 2024-09-17 Swift Solar Inc. Bypass diode interconnect for thin film solar modules
US12154727B2 (en) 2022-12-22 2024-11-26 Swift Solar Inc. Integrated bypass diode schemes for solar modules
KR102882979B1 (ko) 2023-09-14 2025-11-07 씨엔비엠 리서치 인스티튜트 포 어드밴스드 글래스 머터리얼즈 그룹 컴퍼니 리미티드 박막 태양광 모듈 및 그 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60240171A (ja) * 1984-05-15 1985-11-29 Mitsubishi Electric Corp 太陽光発電装置
US4759803A (en) * 1987-08-07 1988-07-26 Applied Solar Energy Corporation Monolithic solar cell and bypass diode system
US5405453A (en) * 1993-11-08 1995-04-11 Applied Solar Energy Corporation High efficiency multi-junction solar cell
JPH0964397A (ja) * 1995-08-29 1997-03-07 Canon Inc 太陽電池および太陽電池モジュール

Also Published As

Publication number Publication date
JP2002517098A (ja) 2002-06-11
DE69941667D1 (de) 2010-01-07
EP1443566A1 (de) 2004-08-04
EP1008188A1 (de) 2000-06-14
EP1443566B1 (de) 2008-10-15
AU4193899A (en) 1999-12-13
EP1008188A4 (de) 2004-04-07
EP1008188B1 (de) 2009-11-25

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Legal Events

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