ATE451722T1 - Verfahren zur herstellung einer lichtemittierenden diode aus einer nitridverbindung der gruppe iii - Google Patents

Verfahren zur herstellung einer lichtemittierenden diode aus einer nitridverbindung der gruppe iii

Info

Publication number
ATE451722T1
ATE451722T1 AT03736594T AT03736594T ATE451722T1 AT E451722 T1 ATE451722 T1 AT E451722T1 AT 03736594 T AT03736594 T AT 03736594T AT 03736594 T AT03736594 T AT 03736594T AT E451722 T1 ATE451722 T1 AT E451722T1
Authority
AT
Austria
Prior art keywords
emitting diode
light emitting
light
contact
producing
Prior art date
Application number
AT03736594T
Other languages
English (en)
Inventor
John Adam Edmond
Brian Thibeaut
David Beardsley Slater Jr
Gerald H Negley
Van Allen Mieczkowski
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE451722T1 publication Critical patent/ATE451722T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
  • Formation Of Insulating Films (AREA)
AT03736594T 2002-05-14 2003-05-14 Verfahren zur herstellung einer lichtemittierenden diode aus einer nitridverbindung der gruppe iii ATE451722T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/145,222 US6825501B2 (en) 1997-08-29 2002-05-14 Robust Group III light emitting diode for high reliability in standard packaging applications
PCT/US2003/014990 WO2003098712A2 (en) 2002-05-14 2003-05-14 High-reliability group iii-nitride light emitting diode

Publications (1)

Publication Number Publication Date
ATE451722T1 true ATE451722T1 (de) 2009-12-15

Family

ID=29548262

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03736594T ATE451722T1 (de) 2002-05-14 2003-05-14 Verfahren zur herstellung einer lichtemittierenden diode aus einer nitridverbindung der gruppe iii

Country Status (11)

Country Link
US (3) US6825501B2 (de)
EP (2) EP2144307B1 (de)
JP (2) JP2005526403A (de)
KR (1) KR20050005479A (de)
CN (1) CN100407449C (de)
AT (1) ATE451722T1 (de)
AU (1) AU2003237835A1 (de)
CA (1) CA2485640A1 (de)
DE (1) DE60330452D1 (de)
TW (1) TWI253185B (de)
WO (1) WO2003098712A2 (de)

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Also Published As

Publication number Publication date
CN1653625A (zh) 2005-08-10
US7473938B2 (en) 2009-01-06
WO2003098712A3 (en) 2004-06-10
EP2144307B1 (de) 2018-10-03
TW200408146A (en) 2004-05-16
US20050095737A1 (en) 2005-05-05
EP1509956B1 (de) 2009-12-09
CN100407449C (zh) 2008-07-30
US20030025121A1 (en) 2003-02-06
CA2485640A1 (en) 2003-11-27
US20030201453A2 (en) 2003-10-30
EP2144307A3 (de) 2015-04-15
AU2003237835A1 (en) 2003-12-02
KR20050005479A (ko) 2005-01-13
TWI253185B (en) 2006-04-11
US20070085104A1 (en) 2007-04-19
DE60330452D1 (de) 2010-01-21
EP2144307A2 (de) 2010-01-13
WO2003098712A2 (en) 2003-11-27
JP2010016409A (ja) 2010-01-21
US7125737B2 (en) 2006-10-24
US6825501B2 (en) 2004-11-30
EP1509956A2 (de) 2005-03-02
JP2005526403A (ja) 2005-09-02

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