ATE324691T1 - Oberflächenemittierendes lichtemittierendes halbleiterbauteil und verfahren zu dessen herstellung, optisches modul und lichtübertragungs-vorrichtung - Google Patents

Oberflächenemittierendes lichtemittierendes halbleiterbauteil und verfahren zu dessen herstellung, optisches modul und lichtübertragungs-vorrichtung

Info

Publication number
ATE324691T1
ATE324691T1 AT03004509T AT03004509T ATE324691T1 AT E324691 T1 ATE324691 T1 AT E324691T1 AT 03004509 T AT03004509 T AT 03004509T AT 03004509 T AT03004509 T AT 03004509T AT E324691 T1 ATE324691 T1 AT E324691T1
Authority
AT
Austria
Prior art keywords
light
emitting
transmission device
optical module
production
Prior art date
Application number
AT03004509T
Other languages
English (en)
Inventor
Tsuyoshi Kaneko
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of ATE324691T1 publication Critical patent/ATE324691T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
AT03004509T 2002-03-01 2003-02-28 Oberflächenemittierendes lichtemittierendes halbleiterbauteil und verfahren zu dessen herstellung, optisches modul und lichtübertragungs-vorrichtung ATE324691T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002055983A JP3767496B2 (ja) 2002-03-01 2002-03-01 面発光型発光素子およびその製造方法、光モジュール、光伝達装置

Publications (1)

Publication Number Publication Date
ATE324691T1 true ATE324691T1 (de) 2006-05-15

Family

ID=27678591

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03004509T ATE324691T1 (de) 2002-03-01 2003-02-28 Oberflächenemittierendes lichtemittierendes halbleiterbauteil und verfahren zu dessen herstellung, optisches modul und lichtübertragungs-vorrichtung

Country Status (5)

Country Link
US (1) US7157743B2 (de)
EP (1) EP1341278B1 (de)
JP (1) JP3767496B2 (de)
AT (1) ATE324691T1 (de)
DE (1) DE60304759T2 (de)

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* Cited by examiner, † Cited by third party
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JP4165244B2 (ja) 2003-02-06 2008-10-15 セイコーエプソン株式会社 受光素子の製造方法
JP2004240361A (ja) 2003-02-10 2004-08-26 Seiko Epson Corp レンズ一体型光ファイバおよびその製造方法、光モジュール、ならびに光伝達装置
JP4120813B2 (ja) 2003-06-12 2008-07-16 セイコーエプソン株式会社 光学部品およびその製造方法
JP3719441B2 (ja) * 2003-08-01 2005-11-24 セイコーエプソン株式会社 光素子およびその製造方法、光モジュール、光伝達装置
JP4586350B2 (ja) * 2003-10-24 2010-11-24 セイコーエプソン株式会社 薄膜デバイス及び電子機器
KR100647278B1 (ko) * 2003-10-27 2006-11-17 삼성전자주식회사 ＩＩＩ - Ｖ 족 ＧａＮ 계 화합물 반도체 및 이에적용되는 ｐ-형 전극
JP3729271B2 (ja) * 2004-01-08 2005-12-21 セイコーエプソン株式会社 光素子およびその製造方法
US7483469B2 (en) 2004-11-01 2009-01-27 Seiko Epson Corporation Surface-emitting type semiconductor laser and its manufacturing method, optical module, and light transmission device
JP2006323147A (ja) 2005-05-19 2006-11-30 Seiko Epson Corp マイクロレンズの製造方法、マイクロレンズ、及び光学膜、プロジェクション用スクリーン、プロジェクターシステム、電気光学装置、電子機器
JP2006339418A (ja) * 2005-06-02 2006-12-14 Seiko Epson Corp 光素子及びその製造方法
US7288798B2 (en) * 2005-06-02 2007-10-30 Lighthouse Technology Co., Ltd Light module
DE102008014122A1 (de) * 2007-11-29 2009-06-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
TWI403003B (zh) * 2009-10-02 2013-07-21 Chi Mei Lighting Tech Corp 發光二極體及其製造方法
CN103219471A (zh) * 2013-04-09 2013-07-24 吉林大学 基于半透明复合阴极的顶发射有机电致发光器件及其制备方法
JP6221540B2 (ja) * 2013-09-13 2017-11-01 富士通株式会社 光デバイス、光モジュール、光デバイスの製造方法及び光モジュールの製造方法
JP6248604B2 (ja) * 2013-12-18 2017-12-20 日亜化学工業株式会社 半導体発光素子及びその電極形成方法
JP6918540B2 (ja) * 2017-03-27 2021-08-11 スタンレー電気株式会社 発光装置
DE102017112235A1 (de) * 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Laserdiode und Verfahren zum Herstellen einer Laserdiode
GB2573576B (en) * 2018-05-11 2020-06-10 Rockley Photonics Ltd Optoelectronic device and method of manufacturing thereof
JP2020108087A (ja) 2018-12-28 2020-07-09 セイコーエプソン株式会社 振動デバイス、電子機器および移動体
JP7531511B2 (ja) 2019-11-06 2024-08-09 ソニーセミコンダクタソリューションズ株式会社 面発光レーザ装置
JP2023117021A (ja) * 2022-02-10 2023-08-23 日亜化学工業株式会社 発光装置の製造方法、光学部材の製造方法及び紫外線照射装置

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Also Published As

Publication number Publication date
US7157743B2 (en) 2007-01-02
EP1341278A1 (de) 2003-09-03
DE60304759D1 (de) 2006-06-01
DE60304759T2 (de) 2006-09-28
JP3767496B2 (ja) 2006-04-19
JP2003258380A (ja) 2003-09-12
US20030197184A1 (en) 2003-10-23
EP1341278B1 (de) 2006-04-26

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