ATE452426T1 - Leistungshalbleiteranordnung mit halbisolierendem substrat - Google Patents

Leistungshalbleiteranordnung mit halbisolierendem substrat

Info

Publication number
ATE452426T1
ATE452426T1 AT98932812T AT98932812T ATE452426T1 AT E452426 T1 ATE452426 T1 AT E452426T1 AT 98932812 T AT98932812 T AT 98932812T AT 98932812 T AT98932812 T AT 98932812T AT E452426 T1 ATE452426 T1 AT E452426T1
Authority
AT
Austria
Prior art keywords
semi
epitaxial layer
source
conductivity type
insulating
Prior art date
Application number
AT98932812T
Other languages
English (en)
Inventor
James Cooper
Michael R Melloch
Jayarama Shenoy
Jan Spitz
Original Assignee
Cooper James Albert Jr
Michael R Melloch
Jayarama Shenoy
Jan Spitz
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cooper James Albert Jr, Michael R Melloch, Jayarama Shenoy, Jan Spitz filed Critical Cooper James Albert Jr
Application granted granted Critical
Publication of ATE452426T1 publication Critical patent/ATE452426T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
AT98932812T 1997-06-23 1998-06-23 Leistungshalbleiteranordnung mit halbisolierendem substrat ATE452426T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5056297P 1997-06-23 1997-06-23
PCT/US1998/013003 WO1998059374A2 (en) 1997-06-23 1998-06-23 Insulated gate power semiconductor device having a semi-insulating semiconductor substrate

Publications (1)

Publication Number Publication Date
ATE452426T1 true ATE452426T1 (de) 2010-01-15

Family

ID=21965975

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98932812T ATE452426T1 (de) 1997-06-23 1998-06-23 Leistungshalbleiteranordnung mit halbisolierendem substrat

Country Status (10)

Country Link
US (1) US6515302B1 (de)
EP (1) EP0993688B1 (de)
JP (1) JP2002506569A (de)
KR (1) KR100553650B1 (de)
CN (1) CN1156017C (de)
AT (1) ATE452426T1 (de)
AU (1) AU8261498A (de)
CA (1) CA2295248C (de)
DE (1) DE69841384D1 (de)
WO (1) WO1998059374A2 (de)

Families Citing this family (15)

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Publication number Priority date Publication date Assignee Title
JP3428459B2 (ja) * 1998-09-01 2003-07-22 富士電機株式会社 炭化けい素ｎチャネルＭＯＳ半導体素子およびその製造方法
EP1177576A2 (de) * 1999-03-31 2002-02-06 SiCED Electronics Development GmbH & Co KG Integrierte halbleitervorrichtung mit einem lateralen leistungselement
US6396080B2 (en) * 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
JP4653704B2 (ja) * 1999-05-21 2011-03-16 関西電力株式会社 半導体装置
US6323506B1 (en) * 1999-12-21 2001-11-27 Philips Electronics North America Corporation Self-aligned silicon carbide LMOSFET
EP1358681A4 (de) * 2001-01-03 2008-04-30 Univ Mississippi Siliciumcarbid- und verwandte transistoren mit grosser bandlücke zur halbisolierenden epitaxie für schnelle hochleistungsanwendungen
CN100403549C (zh) * 2002-12-19 2008-07-16 松下电器产业株式会社 半导体器件及保持电路
US7053718B2 (en) * 2003-09-25 2006-05-30 Silicon Laboratories Inc. Stacked RF power amplifier
US20080038890A1 (en) * 2006-08-10 2008-02-14 General Electric Company Method for improved trench protection in vertical umosfet devices
CN102569350A (zh) * 2012-02-10 2012-07-11 上海先进半导体制造股份有限公司 具有背封的igbt器件结构及其制造方法
RU2719569C1 (ru) 2017-02-14 2020-04-21 Ниссан Мотор Ко., Лтд. Полупроводниковое устройство и способ его изготовления
WO2019202350A1 (ja) 2018-04-19 2019-10-24 日産自動車株式会社 半導体装置及び半導体装置の製造方法
JP7579687B2 (ja) * 2020-12-01 2024-11-08 日産自動車株式会社 半導体装置及びその製造方法
KR102625172B1 (ko) * 2022-09-08 2024-01-15 주식회사 현성그린 자동차용 접이식 주차금지장치
CN116053303A (zh) * 2023-03-17 2023-05-02 泰科天润半导体科技（北京）有限公司 一种抑制热纵向扩散的横向功率碳化硅mosfet的制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device
US3883372A (en) * 1973-07-11 1975-05-13 Westinghouse Electric Corp Method of making a planar graded channel MOS transistor
US3863330A (en) * 1973-08-02 1975-02-04 Motorola Inc Self-aligned double-diffused MOS devices
US3846822A (en) * 1973-10-05 1974-11-05 Bell Telephone Labor Inc Methods for making field effect transistors
DE4325804C3 (de) * 1993-07-31 2001-08-09 Daimler Chrysler Ag Verfahren zum Herstellen von hochohmigem Siliziumkarbid
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
US5378912A (en) * 1993-11-10 1995-01-03 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region
TW286435B (de) * 1994-07-27 1996-09-21 Siemens Ag
JPH08213606A (ja) * 1995-02-06 1996-08-20 Fuji Electric Co Ltd 炭化ケイ素横形高耐圧ｍｏｓｆｅｔ
US5828101A (en) * 1995-03-30 1998-10-27 Kabushiki Kaisha Toshiba Three-terminal semiconductor device and related semiconductor devices
US5877515A (en) * 1995-10-10 1999-03-02 International Rectifier Corporation SiC semiconductor device
US6011278A (en) * 1997-10-28 2000-01-04 Philips Electronics North America Corporation Lateral silicon carbide semiconductor device having a drift region with a varying doping level

Also Published As

Publication number Publication date
CA2295248C (en) 2006-08-29
EP0993688B1 (de) 2009-12-16
CA2295248A1 (en) 1998-12-30
CN1156017C (zh) 2004-06-30
WO1998059374A3 (en) 1999-03-25
JP2002506569A (ja) 2002-02-26
WO1998059374A2 (en) 1998-12-30
AU8261498A (en) 1999-01-04
KR100553650B1 (ko) 2006-02-24
KR20010020486A (ko) 2001-03-15
EP0993688A1 (de) 2000-04-19
CN1286806A (zh) 2001-03-07
US6515302B1 (en) 2003-02-04
DE69841384D1 (de) 2010-01-28

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