ATE453247T1 - Integrierte nitridbasierte akustikwellenbauelemente und verfahren zu deren herstellung - Google Patents

Integrierte nitridbasierte akustikwellenbauelemente und verfahren zu deren herstellung

Info

Publication number
ATE453247T1
ATE453247T1 AT04716159T AT04716159T ATE453247T1 AT E453247 T1 ATE453247 T1 AT E453247T1 AT 04716159 T AT04716159 T AT 04716159T AT 04716159 T AT04716159 T AT 04716159T AT E453247 T1 ATE453247 T1 AT E453247T1
Authority
AT
Austria
Prior art keywords
nitride
nitride epitaxial
electronic device
production
acoustic wave
Prior art date
Application number
AT04716159T
Other languages
English (en)
Inventor
Adam William Saxler
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE453247T1 publication Critical patent/ATE453247T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/0296—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties
    • H03H9/02976—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties with semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Magnetic Ceramics (AREA)
AT04716159T 2003-03-03 2004-03-01 Integrierte nitridbasierte akustikwellenbauelemente und verfahren zu deren herstellung ATE453247T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/378,331 US7112860B2 (en) 2003-03-03 2003-03-03 Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
PCT/US2004/006232 WO2004079904A2 (en) 2003-03-03 2004-03-01 Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices

Publications (1)

Publication Number Publication Date
ATE453247T1 true ATE453247T1 (de) 2010-01-15

Family

ID=32926467

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04716159T ATE453247T1 (de) 2003-03-03 2004-03-01 Integrierte nitridbasierte akustikwellenbauelemente und verfahren zu deren herstellung

Country Status (9)

Country Link
US (3) US7112860B2 (de)
EP (1) EP1599938B1 (de)
JP (1) JP4740836B2 (de)
KR (1) KR101065096B1 (de)
CN (1) CN100557966C (de)
AT (1) ATE453247T1 (de)
CA (1) CA2516916C (de)
DE (1) DE602004024764D1 (de)
WO (1) WO2004079904A2 (de)

Families Citing this family (178)

* Cited by examiner, † Cited by third party
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