ATE453742T1 - Einkristalliner cvd diamant enthaltender verschleissteil - Google Patents

Einkristalliner cvd diamant enthaltender verschleissteil

Info

Publication number
ATE453742T1
ATE453742T1 AT04712623T AT04712623T ATE453742T1 AT E453742 T1 ATE453742 T1 AT E453742T1 AT 04712623 T AT04712623 T AT 04712623T AT 04712623 T AT04712623 T AT 04712623T AT E453742 T1 ATE453742 T1 AT E453742T1
Authority
AT
Austria
Prior art keywords
single crystalline
containing part
cvd diamond
low
diamond containing
Prior art date
Application number
AT04712623T
Other languages
English (en)
Inventor
Jaswinder Gill
Clive Hall
Daniel Twitchen
Geoffrey Scarsbrook
Original Assignee
Element Six Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Element Six Ltd filed Critical Element Six Ltd
Application granted granted Critical
Publication of ATE453742T1 publication Critical patent/ATE453742T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T408/00—Cutting by use of rotating axially moving tool
    • Y10T408/81—Tool having crystalline cutting edge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Metal Extraction Processes (AREA)
  • Knitting Machines (AREA)
  • Scissors And Nippers (AREA)
  • Chemical Vapour Deposition (AREA)
AT04712623T 2003-02-19 2004-02-19 Einkristalliner cvd diamant enthaltender verschleissteil ATE453742T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0303860.1A GB0303860D0 (en) 2003-02-19 2003-02-19 CVD diamond in wear applications
PCT/IB2004/000416 WO2004074557A1 (en) 2003-02-19 2004-02-19 Cvd diamond in wear applications

Publications (1)

Publication Number Publication Date
ATE453742T1 true ATE453742T1 (de) 2010-01-15

Family

ID=9953331

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04712623T ATE453742T1 (de) 2003-02-19 2004-02-19 Einkristalliner cvd diamant enthaltender verschleissteil

Country Status (8)

Country Link
US (1) US7799427B2 (de)
EP (1) EP1599621B1 (de)
JP (1) JP4604021B2 (de)
CN (1) CN1771356B (de)
AT (1) ATE453742T1 (de)
DE (1) DE602004024868D1 (de)
GB (2) GB0303860D0 (de)
WO (1) WO2004074557A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2328563C2 (ru) * 2002-09-06 2008-07-10 Элемент Сикс Лимитед Цветные алмазы
JP5002982B2 (ja) * 2005-04-15 2012-08-15 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
US8242511B2 (en) * 2005-06-20 2012-08-14 Nippon Telegraph And Telephone Corporation Field effect transistor using diamond and process for producing the same
AU2006260656A1 (en) 2005-06-22 2006-12-28 Element Six Limited High colour diamond layer
GB0700984D0 (en) * 2007-01-18 2007-02-28 Element Six Ltd Polycrystalline diamond elements having convex surfaces
KR101273137B1 (ko) * 2007-01-19 2013-06-13 스미토모덴키고교가부시키가이샤 신선 다이스
JP2008229810A (ja) * 2007-03-23 2008-10-02 Allied Material Corp 超精密切削加工用ダイヤモンド工具
ES2816179T3 (es) * 2008-02-06 2021-03-31 Sumitomo Electric Industries Diamante policristalino
US9017633B2 (en) * 2010-01-18 2015-04-28 Element Six Technologies Limited CVD single crystal diamond material
WO2011151414A2 (en) * 2010-06-03 2011-12-08 Element Six Limited Diamond tools
CN101856673A (zh) * 2010-06-18 2010-10-13 北京希波尔科技发展有限公司 一种复合结构的cvd金刚石拉丝模芯及制造方法和应用
JP6360041B2 (ja) * 2013-04-09 2018-07-18 住友電気工業株式会社 単結晶ダイヤモンドおよびダイヤモンド工具
JP6359805B2 (ja) * 2013-04-30 2018-07-18 住友電気工業株式会社 ダイヤモンド複合体、ダイヤモンド複合体の製造方法および単結晶ダイヤモンドの製造方法
KR102392424B1 (ko) * 2014-07-22 2022-05-02 스미토모덴키고교가부시키가이샤 단결정 다이아몬드 및 그 제조 방법, 단결정 다이아몬드를 포함하는 공구, 및 단결정 다이아몬드를 포함하는 부품
SG11201800522PA (en) * 2015-07-22 2018-02-27 Sumitomo Electric Hardmetal Corp Diamond die
CN105150090A (zh) * 2015-08-19 2015-12-16 南京航空航天大学 基于可控织构cvd金刚石膜的蓝宝石球罩研磨工具
GB201620415D0 (en) * 2016-12-01 2017-01-18 Element Six Tech Ltd Single crystal synthetic diamond material via chemical vapour deposition
GB201620413D0 (en) 2016-12-01 2017-01-18 Element Six Tech Ltd Single crystal synthetic diamond material via chemical vapour deposition
CN106582449B (zh) * 2016-12-30 2019-07-19 郑州沃德超硬材料有限公司 多晶金刚石及其制备方法和用途
JP2017186255A (ja) * 2017-07-12 2017-10-12 住友電気工業株式会社 単結晶ダイヤモンドおよびダイヤモンド工具
WO2020004373A1 (ja) * 2018-06-27 2020-01-02 住友電工ハードメタル株式会社 貫通孔付工具、ダイヤモンド部品、及び、ダイヤモンド素材
GB2638116A (en) * 2023-11-01 2025-08-20 Element Six Tech Ltd CVD single crystal diamond material

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL60566A (en) * 1979-08-23 1983-02-23 Gen Electric Supported diamond and improved method for preparing diamond compacts containing single crystal diamonds
JP2571795B2 (ja) 1987-11-17 1997-01-16 住友電気工業株式会社 紫色ダイヤモンドおよびその製造方法
US6007916A (en) * 1989-04-06 1999-12-28 Sumitomo Electric Industries, Ltd. Synthetic single crystal diamond for wiring drawing dies and process for producing the same
JPH06107494A (ja) 1992-09-24 1994-04-19 Sumitomo Electric Ind Ltd ダイヤモンドの気相成長法
US5474021A (en) 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
JP3314444B2 (ja) 1993-03-15 2002-08-12 住友電気工業株式会社 赤色ダイヤモンドおよび桃色ダイヤモンド
JP3484749B2 (ja) * 1994-04-04 2004-01-06 住友電気工業株式会社 ダイヤモンドの合成法
JPH0866900A (ja) * 1994-08-25 1996-03-12 Asahi Daiyamondo Kogyo Kk ウォータージェットノズル
JP4291886B2 (ja) 1994-12-05 2009-07-08 住友電気工業株式会社 低欠陥ダイヤモンド単結晶及びその合成方法
US5634370A (en) * 1995-07-07 1997-06-03 General Electric Company Composite diamond wire die
JP4032482B2 (ja) 1997-04-18 2008-01-16 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
JP4356120B2 (ja) * 1998-02-19 2009-11-04 三菱化学株式会社 高純度ジアリールカーボネート及びその製造方法
EP1290251B8 (de) * 2000-06-15 2006-02-01 Element Six (PTY) Ltd Dicke einkristalline diamantschicht, verfahren zur herstellung der schicht und edelsteine hergestellt durch bearbeitung der schicht

Also Published As

Publication number Publication date
WO2004074557A1 (en) 2004-09-02
GB0303860D0 (en) 2003-03-26
JP2006518699A (ja) 2006-08-17
GB2415189B (en) 2007-09-26
JP4604021B2 (ja) 2010-12-22
EP1599621B1 (de) 2009-12-30
US7799427B2 (en) 2010-09-21
GB0518664D0 (en) 2005-10-19
DE602004024868D1 (de) 2010-02-11
GB2415189A (en) 2005-12-21
US20070054124A1 (en) 2007-03-08
CN1771356B (zh) 2010-04-14
EP1599621A1 (de) 2005-11-30
CN1771356A (zh) 2006-05-10

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