ATE455160T1 - Schlammzusammensetzung für das sekundärpolieren eines siliziumwafers - Google Patents
Schlammzusammensetzung für das sekundärpolieren eines siliziumwafersInfo
- Publication number
- ATE455160T1 ATE455160T1 AT03812702T AT03812702T ATE455160T1 AT E455160 T1 ATE455160 T1 AT E455160T1 AT 03812702 T AT03812702 T AT 03812702T AT 03812702 T AT03812702 T AT 03812702T AT E455160 T1 ATE455160 T1 AT E455160T1
- Authority
- AT
- Austria
- Prior art keywords
- weight
- secondary polishing
- silicon wafer
- sludge composition
- composition
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2002-0077860A KR100516886B1 (ko) | 2002-12-09 | 2002-12-09 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
| PCT/KR2003/001532 WO2004053968A1 (en) | 2002-12-09 | 2003-07-30 | Slurry composition for secondary polishing of silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE455160T1 true ATE455160T1 (de) | 2010-01-15 |
Family
ID=36165413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03812702T ATE455160T1 (de) | 2002-12-09 | 2003-07-30 | Schlammzusammensetzung für das sekundärpolieren eines siliziumwafers |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7534277B2 (de) |
| EP (1) | EP1570512B1 (de) |
| JP (1) | JP4220966B2 (de) |
| KR (1) | KR100516886B1 (de) |
| CN (1) | CN100490082C (de) |
| AT (1) | ATE455160T1 (de) |
| DE (1) | DE60330994D1 (de) |
| TW (1) | TWI243849B (de) |
| WO (1) | WO2004053968A1 (de) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100516884B1 (ko) * | 2002-12-09 | 2005-09-23 | 제일모직주식회사 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
| KR100497412B1 (ko) * | 2002-12-12 | 2005-06-28 | 제일모직주식회사 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
| US7799141B2 (en) * | 2003-06-27 | 2010-09-21 | Lam Research Corporation | Method and system for using a two-phases substrate cleaning compound |
| KR100645307B1 (ko) * | 2004-12-31 | 2006-11-14 | 제일모직주식회사 | 실리콘 웨이퍼용 경면 연마 슬러리 조성물 |
| TWI324797B (en) * | 2005-04-05 | 2010-05-11 | Lam Res Corp | Method for removing particles from a surface |
| KR100643628B1 (ko) * | 2005-11-04 | 2006-11-10 | 제일모직주식회사 | 다결정 실리콘 연마용 cmp 슬러리 조성물 및 이의 제조방법 |
| KR100754807B1 (ko) | 2005-12-23 | 2007-09-03 | 제일모직주식회사 | 실리콘 웨이퍼 연마용 슬러리 조성물 및 이를 이용한연마방법 |
| JP2007235036A (ja) * | 2006-03-03 | 2007-09-13 | Toshiba Ceramics Co Ltd | シリコンウエハの親水化処理方法及びそれに用いる親水化処理剤 |
| CN100383209C (zh) * | 2006-05-31 | 2008-04-23 | 河北工业大学 | 用于硼酸锂铯晶体的化学机械无水抛光液及平整化方法 |
| JP5335183B2 (ja) * | 2006-08-24 | 2013-11-06 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
| JP5204960B2 (ja) * | 2006-08-24 | 2013-06-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
| KR100827591B1 (ko) * | 2006-11-27 | 2008-05-07 | 제일모직주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물 |
| CN101195729A (zh) * | 2006-12-08 | 2008-06-11 | 安集微电子(上海)有限公司 | 非离子型聚合物在自停止多晶硅抛光液制备及使用中的应用 |
| US20090001339A1 (en) * | 2007-06-29 | 2009-01-01 | Tae Young Lee | Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same |
| JP2009146998A (ja) * | 2007-12-12 | 2009-07-02 | Toshiba Corp | 半導体装置の製造方法 |
| SG10201605686XA (en) * | 2008-02-01 | 2016-08-30 | Fujimi Inc | Polishing Composition And Polishing Method Using The Same |
| JP5220428B2 (ja) * | 2008-02-01 | 2013-06-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物を用いた研磨方法 |
| JP5474400B2 (ja) | 2008-07-03 | 2014-04-16 | 株式会社フジミインコーポレーテッド | 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法 |
| DE112011103185T5 (de) * | 2010-09-24 | 2013-07-18 | Fujimi Incorporated | Polierzusammensetzung und Spülzusammensetzung |
| SG189534A1 (en) * | 2010-11-08 | 2013-06-28 | Fujimi Inc | Composition for polishing and method of polishing semiconductor substrate using same |
| TWI593864B (zh) * | 2011-11-11 | 2017-08-01 | Sumco Corp | Semiconductor manufacturing plant |
| TWI456013B (zh) * | 2012-04-10 | 2014-10-11 | 盟智科技股份有限公司 | 研磨液組成物 |
| CN102766408B (zh) * | 2012-06-28 | 2014-05-28 | 深圳市力合材料有限公司 | 一种适用于低下压力的硅晶片精抛光组合液及其制备方法 |
| JP5460827B2 (ja) * | 2012-11-14 | 2014-04-02 | 株式会社フジミインコーポレーテッド | シリコンウエハの製造方法 |
| US9281210B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
| JP6314019B2 (ja) * | 2014-03-31 | 2018-04-18 | ニッタ・ハース株式会社 | 半導体基板の研磨方法 |
| JP6259723B2 (ja) | 2014-06-18 | 2018-01-10 | 株式会社フジミインコーポレーテッド | シリコンウェーハの研磨方法、研磨用組成物および研磨用組成物セット |
| CN105448689B (zh) * | 2014-08-07 | 2018-09-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法和电子装置 |
| JP6206360B2 (ja) * | 2014-08-29 | 2017-10-04 | 株式会社Sumco | シリコンウェーハの研磨方法 |
| TWI595081B (zh) * | 2016-04-29 | 2017-08-11 | 臺灣永光化學工業股份有限公司 | 用於拋光藍寶石基板之研磨組成物和拋光藍寶石基板之方法 |
| CN107398780B (zh) * | 2016-05-18 | 2020-03-31 | 上海新昇半导体科技有限公司 | 一种晶圆的双面抛光方法 |
| CN109971358A (zh) * | 2017-12-27 | 2019-07-05 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
| US11931855B2 (en) * | 2019-06-17 | 2024-03-19 | Applied Materials, Inc. | Planarization methods for packaging substrates |
| KR20220150964A (ko) * | 2020-03-13 | 2022-11-11 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 연마 방법 |
| CN115662877B (zh) * | 2022-09-08 | 2023-08-04 | 东海县太阳光新能源有限公司 | 一种单晶硅表面清洗方法 |
| CN115851138B (zh) * | 2022-12-23 | 2024-06-28 | 博力思(天津)电子科技有限公司 | 一种可减少硅片表面颗粒沾污的硅精抛液 |
| KR20250050299A (ko) * | 2023-10-06 | 2025-04-15 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 이를 이용한 기판의 연마방법 |
| WO2025079862A1 (ko) * | 2023-10-11 | 2025-04-17 | 주식회사 케이씨텍 | 나노 세리아를 포함하는 슬러리 조성물 |
| CN118895025A (zh) * | 2024-10-09 | 2024-11-05 | 宁波兴立新材料有限公司 | 一种低光泽改性聚丙烯材料及其制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3715842A (en) * | 1970-07-02 | 1973-02-13 | Tizon Chem Corp | Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces |
| US4169337A (en) * | 1978-03-30 | 1979-10-02 | Nalco Chemical Company | Process for polishing semi-conductor materials |
| US4462188A (en) * | 1982-06-21 | 1984-07-31 | Nalco Chemical Company | Silica sol compositions for polishing silicon wafers |
| US4588421A (en) * | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
| US4885565A (en) * | 1988-06-01 | 1989-12-05 | General Motors Corporation | Touchscreen CRT with tactile feedback |
| US5352277A (en) * | 1988-12-12 | 1994-10-04 | E. I. Du Pont De Nemours & Company | Final polishing composition |
| DE4034112A1 (de) * | 1990-10-26 | 1992-04-30 | Bosch Gmbh Robert | Blockiergeschuetzte hydraulische mehrkreis-bremsanlage, insbesondere fuer kraftfahrzeuge |
| WO1996038262A1 (en) | 1995-06-01 | 1996-12-05 | Rodel, Inc. | Compositions for polishing silicon wafers and methods |
| US5887995A (en) * | 1997-09-23 | 1999-03-30 | Compaq Computer Corporation | Touchpad overlay with tactile response |
| JP3810588B2 (ja) * | 1998-06-22 | 2006-08-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2000006327A (ja) | 1998-06-23 | 2000-01-11 | Mitsubishi Chem Mkv Co | 積層体 |
| US6429846B2 (en) * | 1998-06-23 | 2002-08-06 | Immersion Corporation | Haptic feedback for touchpads and other touch controls |
| US6676492B2 (en) * | 1998-12-15 | 2004-01-13 | Chou H. Li | Chemical mechanical polishing |
| US6276996B1 (en) * | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| EP1148538A4 (de) * | 1998-12-25 | 2009-10-21 | Hitachi Chemical Co Ltd | Cmp-schleifmittel, flüssigzusatz für dasselbe und substratpoliermethode |
| KR100289150B1 (ko) * | 1998-12-30 | 2001-05-02 | 이병구 | 실리콘웨이퍼의최종연마용슬러리 |
| WO2001033620A1 (fr) | 1999-11-04 | 2001-05-10 | Seimi Chemical Co., Ltd. | Compose a polir pour semi-conducteur contenant un peptide |
| JP3768401B2 (ja) | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
| KR100363557B1 (ko) * | 2000-12-28 | 2002-12-05 | 제일모직주식회사 | 실리콘 웨이퍼 연마용 슬러리 및 이를 이용한 경면연마 방법 |
| JP4025953B2 (ja) * | 2001-01-05 | 2007-12-26 | 荒川化学工業株式会社 | 洗浄剤組成物 |
| US6685757B2 (en) * | 2002-02-21 | 2004-02-03 | Rodel Holdings, Inc. | Polishing composition |
| TW200401358A (en) * | 2002-06-07 | 2004-01-16 | Showa Denko Kk | Metal polish composition, polishing method using the composition and method for producing wafer using the polishing method |
| KR100516884B1 (ko) * | 2002-12-09 | 2005-09-23 | 제일모직주식회사 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
-
2002
- 2002-12-09 KR KR10-2002-0077860A patent/KR100516886B1/ko not_active Expired - Fee Related
-
2003
- 2003-07-30 JP JP2004558503A patent/JP4220966B2/ja not_active Expired - Lifetime
- 2003-07-30 US US10/531,125 patent/US7534277B2/en not_active Expired - Lifetime
- 2003-07-30 EP EP03812702A patent/EP1570512B1/de not_active Expired - Lifetime
- 2003-07-30 DE DE60330994T patent/DE60330994D1/de not_active Expired - Lifetime
- 2003-07-30 AT AT03812702T patent/ATE455160T1/de not_active IP Right Cessation
- 2003-07-30 CN CNB038255340A patent/CN100490082C/zh not_active Expired - Lifetime
- 2003-07-30 WO PCT/KR2003/001532 patent/WO2004053968A1/en not_active Ceased
- 2003-12-09 TW TW092134627A patent/TWI243849B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004053968A1 (en) | 2004-06-24 |
| EP1570512A1 (de) | 2005-09-07 |
| KR20040050726A (ko) | 2004-06-17 |
| CN1714432A (zh) | 2005-12-28 |
| CN100490082C (zh) | 2009-05-20 |
| TWI243849B (en) | 2005-11-21 |
| JP2006509364A (ja) | 2006-03-16 |
| TW200415233A (en) | 2004-08-16 |
| JP4220966B2 (ja) | 2009-02-04 |
| US20060242912A1 (en) | 2006-11-02 |
| DE60330994D1 (de) | 2010-03-04 |
| EP1570512A4 (de) | 2007-05-09 |
| EP1570512B1 (de) | 2010-01-13 |
| US7534277B2 (en) | 2009-05-19 |
| KR100516886B1 (ko) | 2005-09-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |