ATE361960T1 - Schleifmittelzusammensetzung und dieses gebrauchendes polierverfahren - Google Patents

Schleifmittelzusammensetzung und dieses gebrauchendes polierverfahren

Info

Publication number
ATE361960T1
ATE361960T1 AT01307117T AT01307117T ATE361960T1 AT E361960 T1 ATE361960 T1 AT E361960T1 AT 01307117 T AT01307117 T AT 01307117T AT 01307117 T AT01307117 T AT 01307117T AT E361960 T1 ATE361960 T1 AT E361960T1
Authority
AT
Austria
Prior art keywords
layer
method used
polishing method
abrasive composition
abrasive
Prior art date
Application number
AT01307117T
Other languages
English (en)
Inventor
Kenji Sakai
Hiroshi Asano
Tadahiro Kitamura
Katsuyoshi Ina
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Application granted granted Critical
Publication of ATE361960T1 publication Critical patent/ATE361960T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
AT01307117T 2000-08-24 2001-08-21 Schleifmittelzusammensetzung und dieses gebrauchendes polierverfahren ATE361960T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000253349A JP2002075927A (ja) 2000-08-24 2000-08-24 研磨用組成物およびそれを用いた研磨方法

Publications (1)

Publication Number Publication Date
ATE361960T1 true ATE361960T1 (de) 2007-06-15

Family

ID=18742455

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01307117T ATE361960T1 (de) 2000-08-24 2001-08-21 Schleifmittelzusammensetzung und dieses gebrauchendes polierverfahren

Country Status (8)

Country Link
US (1) US6440186B1 (de)
EP (1) EP1182242B1 (de)
JP (1) JP2002075927A (de)
KR (1) KR20020016596A (de)
CN (1) CN1216112C (de)
AT (1) ATE361960T1 (de)
DE (1) DE60128301T2 (de)
TW (1) TW539735B (de)

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JP4954398B2 (ja) 2001-08-09 2012-06-13 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
JP3692067B2 (ja) * 2001-11-30 2005-09-07 株式会社東芝 銅のｃｍｐ用研磨スラリーおよびそれを用いた半導体装置の製造方法
JP2003257910A (ja) * 2001-12-28 2003-09-12 Fujikoshi Mach Corp 基板における銅層の研磨方法
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JP3981616B2 (ja) * 2002-10-02 2007-09-26 株式会社フジミインコーポレーテッド 研磨用組成物
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7390429B2 (en) 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
JP2004363524A (ja) * 2003-06-09 2004-12-24 Matsushita Electric Ind Co Ltd 埋め込み配線の形成方法および半導体装置
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ATE463838T1 (de) * 2003-09-30 2010-04-15 Fujimi Inc Polierzusammensetzung und polierverfahren
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JP4608196B2 (ja) * 2003-09-30 2011-01-05 株式会社フジミインコーポレーテッド 研磨用組成物
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US7153335B2 (en) * 2003-10-10 2006-12-26 Dupont Air Products Nanomaterials Llc Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
EP1695291A4 (de) 2003-11-27 2009-03-25 Smart Internet Technology Crc Kommunikationssysteme und -methode
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US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
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JP4316406B2 (ja) * 2004-03-22 2009-08-19 株式会社フジミインコーポレーテッド 研磨用組成物
JP4644434B2 (ja) * 2004-03-24 2011-03-02 株式会社フジミインコーポレーテッド 研磨用組成物
JP4814502B2 (ja) 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
JP2006086462A (ja) * 2004-09-17 2006-03-30 Fujimi Inc 研磨用組成物およびそれを用いた配線構造体の製造法
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
US7504044B2 (en) 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
JP2006135072A (ja) * 2004-11-05 2006-05-25 Fujimi Inc 研磨方法
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
CN100375770C (zh) * 2005-01-17 2008-03-19 上海大学 核/壳型纳米粒子研磨剂抛光液组合物及其制备方法
CN1854236B (zh) * 2005-04-21 2011-08-03 安集微电子（上海）有限公司 抛光浆料及其用途
JP2008546214A (ja) * 2005-06-06 2008-12-18 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 集積された化学機械研磨組成物および単一プラテン処理のためのプロセス
JP5026710B2 (ja) * 2005-09-02 2012-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
CN100536081C (zh) * 2005-09-02 2009-09-02 福吉米株式会社 抛光组合物
US20070068902A1 (en) * 2005-09-29 2007-03-29 Yasushi Matsunami Polishing composition and polishing method
US20070209287A1 (en) * 2006-03-13 2007-09-13 Cabot Microelectronics Corporation Composition and method to polish silicon nitride
US8759216B2 (en) * 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
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WO2008095078A1 (en) * 2007-01-31 2008-08-07 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
DE102007035833B3 (de) * 2007-07-31 2009-03-12 Advanced Micro Devices, Inc., Sunnyvale Fortgeschrittene automatische Abscheideprofilzielsteuerung und Kontrolle durch Anwendung von fortgeschrittener Polierendpunktsystemrückkopplung
JP2009164188A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
JP2009164186A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
US7922926B2 (en) 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
US8523968B2 (en) * 2008-12-23 2013-09-03 Saint-Gobain Abrasives, Inc. Abrasive article with improved packing density and mechanical properties and method of making
JP5587620B2 (ja) * 2010-01-25 2014-09-10 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
CN102373014A (zh) * 2010-08-24 2012-03-14 安集微电子（上海）有限公司 一种化学机械抛光液
CN102199400A (zh) * 2011-03-25 2011-09-28 江南大学 适用于精细雾化cmp的铜抛光液
KR101238773B1 (ko) * 2011-04-15 2013-03-11 서울대학교산학협력단 구리 화학적 기계적 연마용 슬러리 조성물
DE112012002344T5 (de) * 2011-06-03 2014-02-27 Asahi Glass Co., Ltd. Poliermittel und Polierverfahren
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KR102501836B1 (ko) * 2014-07-15 2023-02-20 바스프 에스이 화학 기계적 연마 (cmp) 조성물
CN115056131A (zh) * 2022-03-21 2022-09-16 康劲 多层铜布线cmp中通过螯合剂修复d坑和蚀坑的方法

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Also Published As

Publication number Publication date
US20020043027A1 (en) 2002-04-18
CN1340583A (zh) 2002-03-20
DE60128301D1 (de) 2007-06-21
TW539735B (en) 2003-07-01
CN1216112C (zh) 2005-08-24
DE60128301T2 (de) 2008-01-10
EP1182242A1 (de) 2002-02-27
US6440186B1 (en) 2002-08-27
JP2002075927A (ja) 2002-03-15
KR20020016596A (ko) 2002-03-04
EP1182242B1 (de) 2007-05-09

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