ATE361960T1 - Schleifmittelzusammensetzung und dieses gebrauchendes polierverfahren - Google Patents
Schleifmittelzusammensetzung und dieses gebrauchendes polierverfahrenInfo
- Publication number
- ATE361960T1 ATE361960T1 AT01307117T AT01307117T ATE361960T1 AT E361960 T1 ATE361960 T1 AT E361960T1 AT 01307117 T AT01307117 T AT 01307117T AT 01307117 T AT01307117 T AT 01307117T AT E361960 T1 ATE361960 T1 AT E361960T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- method used
- polishing method
- abrasive composition
- abrasive
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title 1
- 150000001875 compounds Chemical class 0.000 abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 abstract 1
- 239000013522 chelant Substances 0.000 abstract 1
- 229910001431 copper ion Inorganic materials 0.000 abstract 1
- 239000011164 primary particle Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000253349A JP2002075927A (ja) | 2000-08-24 | 2000-08-24 | 研磨用組成物およびそれを用いた研磨方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE361960T1 true ATE361960T1 (de) | 2007-06-15 |
Family
ID=18742455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01307117T ATE361960T1 (de) | 2000-08-24 | 2001-08-21 | Schleifmittelzusammensetzung und dieses gebrauchendes polierverfahren |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6440186B1 (de) |
| EP (1) | EP1182242B1 (de) |
| JP (1) | JP2002075927A (de) |
| KR (1) | KR20020016596A (de) |
| CN (1) | CN1216112C (de) |
| AT (1) | ATE361960T1 (de) |
| DE (1) | DE60128301T2 (de) |
| TW (1) | TW539735B (de) |
Families Citing this family (72)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002164307A (ja) * | 2000-11-24 | 2002-06-07 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| US6896776B2 (en) | 2000-12-18 | 2005-05-24 | Applied Materials Inc. | Method and apparatus for electro-chemical processing |
| JP2002231666A (ja) | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| US7128825B2 (en) | 2001-03-14 | 2006-10-31 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US7323416B2 (en) | 2001-03-14 | 2008-01-29 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US7582564B2 (en) | 2001-03-14 | 2009-09-01 | Applied Materials, Inc. | Process and composition for conductive material removal by electrochemical mechanical polishing |
| US6899804B2 (en) * | 2001-04-10 | 2005-05-31 | Applied Materials, Inc. | Electrolyte composition and treatment for electrolytic chemical mechanical polishing |
| US7232514B2 (en) | 2001-03-14 | 2007-06-19 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US6811680B2 (en) | 2001-03-14 | 2004-11-02 | Applied Materials Inc. | Planarization of substrates using electrochemical mechanical polishing |
| US7160432B2 (en) | 2001-03-14 | 2007-01-09 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| WO2003005431A1 (en) * | 2001-07-04 | 2003-01-16 | Seimi Chemical Co., Ltd. | Chemical mechanical polishing slurry for semiconductor integrated circuit, polishing method and semiconductor integrated circuit |
| SG144688A1 (en) | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
| JP4954398B2 (ja) | 2001-08-09 | 2012-06-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
| JP3692067B2 (ja) * | 2001-11-30 | 2005-09-07 | 株式会社東芝 | 銅のcmp用研磨スラリーおよびそれを用いた半導体装置の製造方法 |
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| TWI282360B (en) * | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
| JP2004071673A (ja) * | 2002-08-02 | 2004-03-04 | Nec Electronics Corp | 銅系金属研磨スラリー |
| JP4083502B2 (ja) * | 2002-08-19 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨方法及びそれに用いられる研磨用組成物 |
| JP3981616B2 (ja) * | 2002-10-02 | 2007-09-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
| US7390429B2 (en) | 2003-06-06 | 2008-06-24 | Applied Materials, Inc. | Method and composition for electrochemical mechanical polishing processing |
| JP2004363524A (ja) * | 2003-06-09 | 2004-12-24 | Matsushita Electric Ind Co Ltd | 埋め込み配線の形成方法および半導体装置 |
| KR101123210B1 (ko) * | 2003-07-09 | 2012-03-19 | 다이니아 케미컬스 오이 | 화학적 기계적 평탄화용 비-중합성 유기 입자 |
| US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
| US7186653B2 (en) * | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
| JP4608196B2 (ja) * | 2003-09-30 | 2011-01-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US7485162B2 (en) | 2003-09-30 | 2009-02-03 | Fujimi Incorporated | Polishing composition |
| EP1670047B1 (de) * | 2003-09-30 | 2010-04-07 | Fujimi Incorporated | Polierzusammensetzung und polierverfahren |
| US20050092620A1 (en) * | 2003-10-01 | 2005-05-05 | Applied Materials, Inc. | Methods and apparatus for polishing a substrate |
| US7153335B2 (en) * | 2003-10-10 | 2006-12-26 | Dupont Air Products Nanomaterials Llc | Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole |
| KR20060126520A (ko) | 2003-11-27 | 2006-12-07 | 스마트 인터넷 테크놀로지 씨알씨 피티와이 엘티디 | 통신 시스템 및 통신 방법 |
| JP2005203729A (ja) * | 2003-12-19 | 2005-07-28 | Ebara Corp | 基板研磨装置 |
| US7390744B2 (en) | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| KR100588404B1 (ko) * | 2004-03-16 | 2006-06-12 | 삼성코닝 주식회사 | 반도체 박막 연마용 산화세륨 슬러리 |
| JP2005268666A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| JP2005268664A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| JP4316406B2 (ja) * | 2004-03-22 | 2009-08-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP4644434B2 (ja) * | 2004-03-24 | 2011-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP4814502B2 (ja) | 2004-09-09 | 2011-11-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| US7084064B2 (en) | 2004-09-14 | 2006-08-01 | Applied Materials, Inc. | Full sequence metal and barrier layer electrochemical mechanical processing |
| JP2006086462A (ja) * | 2004-09-17 | 2006-03-30 | Fujimi Inc | 研磨用組成物およびそれを用いた配線構造体の製造法 |
| US7524347B2 (en) * | 2004-10-28 | 2009-04-28 | Cabot Microelectronics Corporation | CMP composition comprising surfactant |
| JP2006135072A (ja) * | 2004-11-05 | 2006-05-25 | Fujimi Inc | 研磨方法 |
| US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US7504044B2 (en) | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| CN100375770C (zh) * | 2005-01-17 | 2008-03-19 | 上海大学 | 核/壳型纳米粒子研磨剂抛光液组合物及其制备方法 |
| CN1854236B (zh) * | 2005-04-21 | 2011-08-03 | 安集微电子(上海)有限公司 | 抛光浆料及其用途 |
| JP2008546214A (ja) * | 2005-06-06 | 2008-12-18 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 集積された化学機械研磨組成物および単一プラテン処理のためのプロセス |
| JP5026710B2 (ja) * | 2005-09-02 | 2012-09-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JPWO2007026862A1 (ja) * | 2005-09-02 | 2009-03-12 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US20070068902A1 (en) * | 2005-09-29 | 2007-03-29 | Yasushi Matsunami | Polishing composition and polishing method |
| US20070209287A1 (en) * | 2006-03-13 | 2007-09-13 | Cabot Microelectronics Corporation | Composition and method to polish silicon nitride |
| US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
| SG139699A1 (en) | 2006-08-02 | 2008-02-29 | Fujimi Inc | Polishing composition and polishing process |
| WO2008095078A1 (en) * | 2007-01-31 | 2008-08-07 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
| DE102007035833B3 (de) * | 2007-07-31 | 2009-03-12 | Advanced Micro Devices, Inc., Sunnyvale | Fortgeschrittene automatische Abscheideprofilzielsteuerung und Kontrolle durch Anwendung von fortgeschrittener Polierendpunktsystemrückkopplung |
| JP2009164186A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
| JP2009164188A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
| US7922926B2 (en) | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
| US8523968B2 (en) * | 2008-12-23 | 2013-09-03 | Saint-Gobain Abrasives, Inc. | Abrasive article with improved packing density and mechanical properties and method of making |
| JP5587620B2 (ja) * | 2010-01-25 | 2014-09-10 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| CN102373014A (zh) * | 2010-08-24 | 2012-03-14 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
| CN102199400A (zh) * | 2011-03-25 | 2011-09-28 | 江南大学 | 适用于精细雾化cmp的铜抛光液 |
| KR101238773B1 (ko) * | 2011-04-15 | 2013-03-11 | 서울대학교산학협력단 | 구리 화학적 기계적 연마용 슬러리 조성물 |
| KR20140019372A (ko) | 2011-06-03 | 2014-02-14 | 아사히 가라스 가부시키가이샤 | 연마제 및 연마 방법 |
| US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
| TWI608089B (zh) * | 2012-11-02 | 2017-12-11 | 福吉米股份有限公司 | Grinding composition |
| US8974692B2 (en) | 2013-06-27 | 2015-03-10 | Air Products And Chemicals, Inc. | Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications |
| CN103409757B (zh) * | 2013-08-26 | 2016-01-20 | 中核(天津)科技发展有限公司 | 一种环保型铜制品用化学抛光液及其制备方法 |
| JP6817186B6 (ja) * | 2014-07-15 | 2021-02-10 | ビーエイエスエフ・ソシエタス・エウロパエアBasf Se | 化学機械研磨(cmp)組成物 |
| CN115056131A (zh) * | 2022-03-21 | 2022-09-16 | 康劲 | 多层铜布线cmp中通过螯合剂修复d坑和蚀坑的方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3397501B2 (ja) * | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
| US6309560B1 (en) | 1996-12-09 | 2001-10-30 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US5954997A (en) * | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
| US6063306A (en) * | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
| CN1126152C (zh) * | 1998-08-31 | 2003-10-29 | 长兴化学工业股份有限公司 | 半导体制程用的化学机械研磨组合物 |
| JP4053165B2 (ja) * | 1998-12-01 | 2008-02-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
| EP1833085A1 (de) * | 1998-12-28 | 2007-09-12 | Hitachi Chemical Company, Ltd. | Materialien für eine Reinigungsflüssigkeit für Metall, Reinigungsflüssigkeit für Metall, Herstellungsverfahren dafür und Reinigungsverfahren damit |
| KR100447551B1 (ko) | 1999-01-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법 |
| TW499471B (en) * | 1999-09-01 | 2002-08-21 | Eternal Chemical Co Ltd | Chemical mechanical/abrasive composition for semiconductor processing |
-
2000
- 2000-08-24 JP JP2000253349A patent/JP2002075927A/ja active Pending
-
2001
- 2001-08-15 US US09/928,996 patent/US6440186B1/en not_active Expired - Lifetime
- 2001-08-15 TW TW090120020A patent/TW539735B/zh not_active IP Right Cessation
- 2001-08-21 DE DE60128301T patent/DE60128301T2/de not_active Expired - Fee Related
- 2001-08-21 EP EP01307117A patent/EP1182242B1/de not_active Expired - Lifetime
- 2001-08-21 AT AT01307117T patent/ATE361960T1/de not_active IP Right Cessation
- 2001-08-22 CN CN011222980A patent/CN1216112C/zh not_active Expired - Fee Related
- 2001-08-24 KR KR1020010051445A patent/KR20020016596A/ko not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN1216112C (zh) | 2005-08-24 |
| TW539735B (en) | 2003-07-01 |
| EP1182242B1 (de) | 2007-05-09 |
| CN1340583A (zh) | 2002-03-20 |
| DE60128301T2 (de) | 2008-01-10 |
| EP1182242A1 (de) | 2002-02-27 |
| JP2002075927A (ja) | 2002-03-15 |
| US6440186B1 (en) | 2002-08-27 |
| DE60128301D1 (de) | 2007-06-21 |
| US20020043027A1 (en) | 2002-04-18 |
| KR20020016596A (ko) | 2002-03-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |