ATE455367T1 - Halbleiterschleif prozess zu seiner herstellung und polierverfahren - Google Patents

Halbleiterschleif prozess zu seiner herstellung und polierverfahren

Info

Publication number
ATE455367T1
ATE455367T1 AT03741526T AT03741526T ATE455367T1 AT E455367 T1 ATE455367 T1 AT E455367T1 AT 03741526 T AT03741526 T AT 03741526T AT 03741526 T AT03741526 T AT 03741526T AT E455367 T1 ATE455367 T1 AT E455367T1
Authority
AT
Austria
Prior art keywords
polishing
additive
polishing compound
compound
semiconductor
Prior art date
Application number
AT03741526T
Other languages
English (en)
Inventor
Yoshinori Kon
Norihito Nakazawa
Chie Ishida
Original Assignee
Seimi Chem Kk
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seimi Chem Kk, Asahi Glass Co Ltd filed Critical Seimi Chem Kk
Application granted granted Critical
Publication of ATE455367T1 publication Critical patent/ATE455367T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT03741526T 2002-07-22 2003-07-22 Halbleiterschleif prozess zu seiner herstellung und polierverfahren ATE455367T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002212679 2002-07-22
PCT/JP2003/009259 WO2004010487A1 (ja) 2002-07-22 2003-07-22 半導体用研磨剤、その製造方法及び研磨方法

Publications (1)

Publication Number Publication Date
ATE455367T1 true ATE455367T1 (de) 2010-01-15

Family

ID=30767815

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03741526T ATE455367T1 (de) 2002-07-22 2003-07-22 Halbleiterschleif prozess zu seiner herstellung und polierverfahren

Country Status (11)

Country Link
US (2) US20050126080A1 (de)
EP (1) EP1542266B1 (de)
JP (1) JP4554363B2 (de)
KR (2) KR101068068B1 (de)
CN (1) CN100369211C (de)
AT (1) ATE455367T1 (de)
AU (1) AU2003281655A1 (de)
DE (1) DE60330971D1 (de)
SG (1) SG155045A1 (de)
TW (1) TWI285668B (de)
WO (1) WO2004010487A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI256971B (en) * 2002-08-09 2006-06-21 Hitachi Chemical Co Ltd CMP abrasive and method for polishing substrate
KR100582771B1 (ko) * 2004-03-29 2006-05-22 한화석유화학 주식회사 반도체 얕은 트렌치 소자 분리 공정용 화학적 기계적 연마슬러리
EP1747849A1 (de) * 2004-05-19 2007-01-31 Nissan Chemical Industries, Ltd. Polierzusammensetzung
JPWO2006009160A1 (ja) 2004-07-23 2008-05-01 日立化成工業株式会社 Ｃｍｐ研磨剤及び基板の研磨方法
US20070218811A1 (en) * 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
JP4852302B2 (ja) * 2004-12-01 2012-01-11 信越半導体株式会社 研磨剤の製造方法及びそれにより製造された研磨剤並びにシリコンウエーハの製造方法
JP2006179678A (ja) * 2004-12-22 2006-07-06 Hitachi Chem Co Ltd 半導体絶縁膜用ｃｍｐ研磨剤及び基板の研磨方法
JP2006303348A (ja) * 2005-04-25 2006-11-02 Asahi Glass Co Ltd 化学的機械的研磨用研磨剤、研磨方法および半導体集積回路装置の製造方法
JP2006339594A (ja) * 2005-06-06 2006-12-14 Seimi Chem Co Ltd 半導体用研磨剤
KR20080042043A (ko) * 2005-09-09 2008-05-14 아사히 가라스 가부시키가이샤 연마제, 피연마면의 연마 방법 및 반도체 집적 회로 장치의제조 방법
JP2007103515A (ja) * 2005-09-30 2007-04-19 Fujimi Inc 研磨方法
KR100734305B1 (ko) * 2006-01-17 2007-07-02 삼성전자주식회사 디싱 현상 없이 평탄화된 막을 구비하는 반도체 소자의제조방법 및 그에 의해 제조된 반도체 소자
US7721415B2 (en) * 2006-04-19 2010-05-25 Headway Technologies, Inc Method of manufacturing a thin-film magnetic head
SG136886A1 (en) * 2006-04-28 2007-11-29 Asahi Glass Co Ltd Method for producing glass substrate for magnetic disk, and magnetic disk
JP2008010835A (ja) * 2006-05-31 2008-01-17 Sumitomo Electric Ind Ltd 窒化物結晶の表面処理方法、窒化物結晶基板、エピタキシャル層付窒化物結晶基板および半導体デバイス、ならびにエピタキシャル層付窒化物結晶基板および半導体デバイスの製造方法
JP4836731B2 (ja) * 2006-07-18 2011-12-14 旭硝子株式会社 磁気ディスク用ガラス基板の製造方法
EP2061070A4 (de) * 2006-09-11 2010-06-02 Asahi Glass Co Ltd Poliermittel für ein integriertes halbleiterschaltungsbauelement, polierverfahren und verfahren zum herstellen eines integrierten halbleiterschaltungsbauelements
EP2063461A4 (de) * 2006-09-13 2010-06-02 Asahi Glass Co Ltd Poliermittel für ein integriertes halbleiterschaltungsbauelement, polierverfahren und verfahren zum herstellen eines integrierten halbleiterschaltungsbauelements
JP5186707B2 (ja) * 2006-09-15 2013-04-24 日立化成株式会社 Ｃｍｐ研磨剤、ｃｍｐ研磨剤用添加液及びこれらを用いた基板の研磨方法
KR101388956B1 (ko) 2006-12-28 2014-04-24 가오 가부시키가이샤 연마액 조성물
JP4489108B2 (ja) * 2007-09-13 2010-06-23 株式会社東芝 半導体装置の製造方法
CN101608097B (zh) * 2009-07-14 2011-12-21 上海华明高纳稀土新材料有限公司 化学机械抛光用纳米氧化铈浆液及其制备方法
JPWO2013099595A1 (ja) * 2011-12-27 2015-04-30 旭硝子株式会社 研磨剤用添加剤および研磨方法
JP5957292B2 (ja) 2012-05-18 2016-07-27 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
EP2914675A4 (de) * 2012-11-02 2016-10-05 L Livermore Nat Security Llc Verfahren zur verhinderung der agglomeration von geladenen kolloiden ohne verlust der oberflächenaktivität
JP6191433B2 (ja) * 2013-12-11 2017-09-06 旭硝子株式会社 研磨剤および研磨方法
EP3121239A4 (de) 2014-03-20 2017-03-15 Fujimi Incorporated Polierzusammensetzung, polierverfahren und verfahren zur herstellung eines substrats
KR102594932B1 (ko) * 2015-05-08 2023-10-27 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
US10421890B2 (en) * 2016-03-31 2019-09-24 Versum Materials Us, Llc Composite particles, method of refining and use thereof
JP7187770B2 (ja) 2017-11-08 2022-12-13 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
JP7467188B2 (ja) 2020-03-24 2024-04-15 キオクシア株式会社 Ｃｍｐ方法及びｃｍｐ用洗浄剤
CN111673607B (zh) * 2020-04-28 2021-11-26 北京烁科精微电子装备有限公司 一种化学机械平坦化设备
CN114434318B (zh) 2020-11-06 2024-06-14 Sk恩普士有限公司 抛光垫及其制备方法以及使用其的半导体器件的制造方法
CN117247738A (zh) * 2023-09-27 2023-12-19 博力思(天津)电子科技有限公司 一种可降低晶圆表面缺陷的sti抛光液

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3278532B2 (ja) * 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
JPH10125638A (ja) * 1996-08-29 1998-05-15 Sumitomo Chem Co Ltd 研磨用組成物及びそれを使用した半導体基板上の金属膜の平坦化方法
KR19980019046A (ko) * 1996-08-29 1998-06-05 고사이 아키오 연마용 조성물 및 이의 용도(Abrasive composition and use of the same)
EP1610367B1 (de) * 1996-09-30 2010-03-17 Hitachi Chemical Co., Ltd. Schleifmittel auf Basis von Ceroxid und Verfahren zum Polieren von Oberflächen
JPH10102040A (ja) * 1996-09-30 1998-04-21 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
SG72802A1 (en) * 1997-04-28 2000-05-23 Seimi Chem Kk Polishing agent for semiconductor and method for its production
DE69917010T2 (de) * 1998-02-24 2005-04-07 Showa Denko K.K. Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben
JP3480323B2 (ja) * 1998-06-30 2003-12-15 日立化成工業株式会社 酸化セリウム研磨剤、基板の研磨法及び半導体装置
JP2000158341A (ja) * 1998-11-27 2000-06-13 Sumitomo Metal Ind Ltd 研磨方法及び研磨システム
EP1148538A4 (de) * 1998-12-25 2009-10-21 Hitachi Chemical Co Ltd Cmp-schleifmittel, flüssigzusatz für dasselbe und substratpoliermethode
JP2000357795A (ja) * 1999-06-17 2000-12-26 Nec Kansai Ltd ディプレッション型半導体装置の製造方法
JP3957924B2 (ja) * 1999-06-28 2007-08-15 株式会社東芝 Ｃｍｐ研磨方法
JP4555936B2 (ja) * 1999-07-21 2010-10-06 日立化成工業株式会社 Ｃｍｐ研磨液
JP2001031951A (ja) * 1999-07-22 2001-02-06 Hitachi Chem Co Ltd 研磨剤及び基板の研磨方法
JP2001284296A (ja) * 2000-03-02 2001-10-12 Eternal Chemical Co Ltd 研磨性スラリー及びその使用
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP4123730B2 (ja) * 2001-03-15 2008-07-23 日立化成工業株式会社 酸化セリウム研磨剤及びこれを用いた基板の研磨方法
US6540935B2 (en) * 2001-04-05 2003-04-01 Samsung Electronics Co., Ltd. Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same
JP5017574B2 (ja) * 2001-05-25 2012-09-05 エア プロダクツ アンド ケミカルズ インコーポレイテッド 酸化セリウム研磨剤及び基板の製造方法
KR100457743B1 (ko) * 2002-05-17 2004-11-18 주식회사 하이닉스반도체 산화막용 ｃｍｐ 슬러리 및 이를 이용한 반도체 소자의형성 방법
EP1860688A4 (de) * 2005-03-16 2010-08-18 Asahi Glass Co Ltd Scheuermittel für eine integrierte halbleiterschaltungseinrichtung, verfahren zum polieren einer integrierten halbleiterschaltungseinrichtung und herstellungsverfahren für eine integrierte halbleiterschaltungseinrichtung
JP2006278522A (ja) * 2005-03-28 2006-10-12 Seimi Chem Co Ltd 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
JP2006339594A (ja) * 2005-06-06 2006-12-14 Seimi Chem Co Ltd 半導体用研磨剤
EP2061070A4 (de) * 2006-09-11 2010-06-02 Asahi Glass Co Ltd Poliermittel für ein integriertes halbleiterschaltungsbauelement, polierverfahren und verfahren zum herstellen eines integrierten halbleiterschaltungsbauelements
EP2063461A4 (de) * 2006-09-13 2010-06-02 Asahi Glass Co Ltd Poliermittel für ein integriertes halbleiterschaltungsbauelement, polierverfahren und verfahren zum herstellen eines integrierten halbleiterschaltungsbauelements

Also Published As

Publication number Publication date
CN1672246A (zh) 2005-09-21
KR20050021533A (ko) 2005-03-07
KR101068068B1 (ko) 2011-09-28
EP1542266A1 (de) 2005-06-15
AU2003281655A8 (en) 2004-02-09
EP1542266A4 (de) 2005-09-14
US20100055909A1 (en) 2010-03-04
KR100988749B1 (ko) 2010-10-20
DE60330971D1 (de) 2010-03-04
US20050126080A1 (en) 2005-06-16
EP1542266B1 (de) 2010-01-13
JPWO2004010487A1 (ja) 2005-11-17
WO2004010487A1 (ja) 2004-01-29
TW200403317A (en) 2004-03-01
TWI285668B (en) 2007-08-21
JP4554363B2 (ja) 2010-09-29
AU2003281655A1 (en) 2004-02-09
SG155045A1 (en) 2009-09-30
KR20100088629A (ko) 2010-08-09
CN100369211C (zh) 2008-02-13

Similar Documents

Publication Publication Date Title
ATE455367T1 (de) Halbleiterschleif prozess zu seiner herstellung und polierverfahren
US7678700B2 (en) Silicon carbide polishing method utilizing water-soluble oxidizers
US8741009B2 (en) Polishing composition containing polyether amine
TW510917B (en) Abrasive composition for polishing semiconductor device and method for manufacturing semiconductor device using same
US6491843B1 (en) Slurry for chemical mechanical polishing silicon dioxide
US6468910B1 (en) Slurry for chemical mechanical polishing silicon dioxide
CN103261358B (zh) 用于抛光多晶硅的组合物及方法
EP1160300A3 (de) Wässrige Dispersionsaufschlämmung für chemisch-mechanisches Polierverfahren
DE602005018586D1 (de) Methode zum selektiven Polieren einer Siliziumnitridschicht
US20060021972A1 (en) Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
US20070007248A1 (en) Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20110269312A1 (en) Chemical mechanical polishing (cmp) polishing solution with enhanced performance
CN102939643B (zh) 用于抛光大体积硅的组合物及方法
JP2001035820A (ja) Ｃｍｐ研磨液
TWI263672B (en) Aqueous dispersion for chemical/mechanical polishing
WO2013077369A1 (ja) 研磨用組成物
TW200609336A (en) Polishing composition and substrate polishing method
JPH10106988A (ja) 酸化セリウム研磨剤及び基板の研磨法
KR100636994B1 (ko) 표면이하 결함을 개선하는 실리콘 웨이퍼 경면연마용슬러리 조성물
US20220017781A1 (en) Silicon wafer polishing composition and method
JP2004282092A5 (de)

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties