ATE455367T1 - Halbleiterschleif prozess zu seiner herstellung und polierverfahren - Google Patents

Halbleiterschleif prozess zu seiner herstellung und polierverfahren

Info

Publication number
ATE455367T1
ATE455367T1 AT03741526T AT03741526T ATE455367T1 AT E455367 T1 ATE455367 T1 AT E455367T1 AT 03741526 T AT03741526 T AT 03741526T AT 03741526 T AT03741526 T AT 03741526T AT E455367 T1 ATE455367 T1 AT E455367T1
Authority
AT
Austria
Prior art keywords
polishing
additive
polishing compound
compound
semiconductor
Prior art date
Application number
AT03741526T
Other languages
English (en)
Inventor
Yoshinori Kon
Norihito Nakazawa
Chie Ishida
Original Assignee
Seimi Chem Kk
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seimi Chem Kk, Asahi Glass Co Ltd filed Critical Seimi Chem Kk
Application granted granted Critical
Publication of ATE455367T1 publication Critical patent/ATE455367T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT03741526T 2002-07-22 2003-07-22 Halbleiterschleif prozess zu seiner herstellung und polierverfahren ATE455367T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002212679 2002-07-22
PCT/JP2003/009259 WO2004010487A1 (ja) 2002-07-22 2003-07-22 半導体用研磨剤、その製造方法及び研磨方法

Publications (1)

Publication Number Publication Date
ATE455367T1 true ATE455367T1 (de) 2010-01-15

Family

ID=30767815

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03741526T ATE455367T1 (de) 2002-07-22 2003-07-22 Halbleiterschleif prozess zu seiner herstellung und polierverfahren

Country Status (11)

Country Link
US (2) US20050126080A1 (de)
EP (1) EP1542266B1 (de)
JP (1) JP4554363B2 (de)
KR (2) KR101068068B1 (de)
CN (1) CN100369211C (de)
AT (1) ATE455367T1 (de)
AU (1) AU2003281655A1 (de)
DE (1) DE60330971D1 (de)
SG (1) SG155045A1 (de)
TW (1) TWI285668B (de)
WO (1) WO2004010487A1 (de)

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US9293344B2 (en) 2004-07-23 2016-03-22 Hitachi Chemical Company, Ltd. Cmp polishing slurry and method of polishing substrate
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JP4836731B2 (ja) * 2006-07-18 2011-12-14 旭硝子株式会社 磁気ディスク用ガラス基板の製造方法
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KR20090057249A (ko) * 2006-09-15 2009-06-04 히다치 가세고교 가부시끼가이샤 Ｃｍｐ 연마제, ｃｍｐ 연마제용 첨가액 및 이들을 이용한 기판의 연마방법
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JP4489108B2 (ja) * 2007-09-13 2010-06-23 株式会社東芝 半導体装置の製造方法
CN101608097B (zh) * 2009-07-14 2011-12-21 上海华明高纳稀土新材料有限公司 化学机械抛光用纳米氧化铈浆液及其制备方法
CN104024366A (zh) * 2011-12-27 2014-09-03 旭硝子株式会社 研磨剂用添加剂及研磨方法
JP5957292B2 (ja) 2012-05-18 2016-07-27 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
JP6321022B2 (ja) * 2012-11-02 2018-05-09 ローレンス リバモア ナショナル セキュリティー， エルエルシー 表面活性を失うことなく荷電コロイドの凝集を阻止する方法
JP6191433B2 (ja) * 2013-12-11 2017-09-06 旭硝子株式会社 研磨剤および研磨方法
KR102298256B1 (ko) 2014-03-20 2021-09-07 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 연마 방법 및 기판의 제조 방법
JP6829191B2 (ja) * 2015-05-08 2021-02-10 株式会社フジミインコーポレーテッド 研磨方法
US10421890B2 (en) * 2016-03-31 2019-09-24 Versum Materials Us, Llc Composite particles, method of refining and use thereof
JP7187770B2 (ja) 2017-11-08 2022-12-13 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
JP7467188B2 (ja) 2020-03-24 2024-04-15 キオクシア株式会社 Ｃｍｐ方法及びｃｍｐ用洗浄剤
CN111673607B (zh) * 2020-04-28 2021-11-26 北京烁科精微电子装备有限公司 一种化学机械平坦化设备
CN114434318B (zh) * 2020-11-06 2024-06-14 Sk恩普士有限公司 抛光垫及其制备方法以及使用其的半导体器件的制造方法
CN117247738A (zh) * 2023-09-27 2023-12-19 博力思(天津)电子科技有限公司 一种可降低晶圆表面缺陷的sti抛光液

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JP4123730B2 (ja) * 2001-03-15 2008-07-23 日立化成工業株式会社 酸化セリウム研磨剤及びこれを用いた基板の研磨方法
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JP5017574B2 (ja) * 2001-05-25 2012-09-05 エア プロダクツ アンド ケミカルズ インコーポレイテッド 酸化セリウム研磨剤及び基板の製造方法
KR100457743B1 (ko) * 2002-05-17 2004-11-18 주식회사 하이닉스반도체 산화막용 ｃｍｐ 슬러리 및 이를 이용한 반도체 소자의형성 방법
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JP2006278522A (ja) * 2005-03-28 2006-10-12 Seimi Chem Co Ltd 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
JP2006339594A (ja) * 2005-06-06 2006-12-14 Seimi Chem Co Ltd 半導体用研磨剤
KR20090049067A (ko) * 2006-09-11 2009-05-15 아사히 가라스 가부시키가이샤 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체 집적 회로 장치의 제조 방법
CN101517709B (zh) * 2006-09-13 2011-05-25 旭硝子株式会社 半导体集成电路装置用抛光剂、抛光方法、以及制造半导体集成电路装置的方法

Also Published As

Publication number Publication date
JP4554363B2 (ja) 2010-09-29
TWI285668B (en) 2007-08-21
EP1542266A4 (de) 2005-09-14
EP1542266A1 (de) 2005-06-15
US20100055909A1 (en) 2010-03-04
AU2003281655A8 (en) 2004-02-09
JPWO2004010487A1 (ja) 2005-11-17
SG155045A1 (en) 2009-09-30
AU2003281655A1 (en) 2004-02-09
EP1542266B1 (de) 2010-01-13
KR100988749B1 (ko) 2010-10-20
TW200403317A (en) 2004-03-01
CN1672246A (zh) 2005-09-21
DE60330971D1 (de) 2010-03-04
KR20100088629A (ko) 2010-08-09
US20050126080A1 (en) 2005-06-16
CN100369211C (zh) 2008-02-13
WO2004010487A1 (ja) 2004-01-29
KR20050021533A (ko) 2005-03-07
KR101068068B1 (ko) 2011-09-28

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