ATE455393T1 - Monolithischer duplexer - Google Patents

Monolithischer duplexer

Info

Publication number
ATE455393T1
ATE455393T1 AT05024698T AT05024698T ATE455393T1 AT E455393 T1 ATE455393 T1 AT E455393T1 AT 05024698 T AT05024698 T AT 05024698T AT 05024698 T AT05024698 T AT 05024698T AT E455393 T1 ATE455393 T1 AT E455393T1
Authority
AT
Austria
Prior art keywords
end filter
substrate
transmitting
receiving
area
Prior art date
Application number
AT05024698T
Other languages
English (en)
Inventor
Yun-Kwon Park
In-Sang Song
Seok-Chul Yun
Seog-Woo Hong
Byeoung-Ju Ha
Dong-Ha Shim
Hae-Seok Park
Kuang-Woo Nam
Duck-Hwan Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of ATE455393T1 publication Critical patent/ATE455393T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
    • H03H9/0571—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including bulk acoustic wave [BAW] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/703—Networks using bulk acoustic wave devices
    • H03H9/706—Duplexers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Ceramic Capacitors (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
AT05024698T 2004-11-23 2005-11-11 Monolithischer duplexer ATE455393T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20040096120A KR100666693B1 (ko) 2004-11-23 2004-11-23 모놀리식 듀플렉서

Publications (1)

Publication Number Publication Date
ATE455393T1 true ATE455393T1 (de) 2010-01-15

Family

ID=35759254

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05024698T ATE455393T1 (de) 2004-11-23 2005-11-11 Monolithischer duplexer

Country Status (7)

Country Link
US (2) US7663450B2 (de)
EP (1) EP1659688B1 (de)
JP (1) JP4316557B2 (de)
KR (1) KR100666693B1 (de)
CN (1) CN100474773C (de)
AT (1) ATE455393T1 (de)
DE (1) DE602005018888D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100719123B1 (ko) * 2006-07-27 2007-05-18 삼성전자주식회사 멀피 밴드 필터모듈 및 그 제조방법
JP4997961B2 (ja) * 2006-12-26 2012-08-15 宇部興産株式会社 集積化分波器
KR20110041179A (ko) * 2009-10-15 2011-04-21 한국전자통신연구원 패키지 구조
JP6056905B2 (ja) * 2010-03-11 2017-01-11 セイコーエプソン株式会社 圧電素子、圧電センサー、および電子機器
JP5754129B2 (ja) * 2010-03-11 2015-07-29 セイコーエプソン株式会社 圧電素子、圧電センサー、電子機器、および圧電素子の製造方法
KR101928359B1 (ko) * 2012-09-11 2018-12-12 삼성전자주식회사 전도성 물질을 이용하여 전기적 손실을 처리하는 공진 장치 및 그 제조 방법
KR101959204B1 (ko) * 2013-01-09 2019-07-04 삼성전자주식회사 무선 주파수 필터 및 무선 주파수 필터의 제조방법
US10358340B2 (en) 2016-04-28 2019-07-23 Globalfoundries Singapore Pte. Ltd. Integrated circuits having shielded MEMS devices and methods for fabricating shielded MEMS devices
KR20180003868A (ko) * 2016-07-01 2018-01-10 삼성전기주식회사 벌크 탄성파 필터
DE102016125208A1 (de) * 2016-12-21 2018-06-21 Snaptrack, Inc. Duplexer-Komponente mit hoher Unterdrückung von Signalen zwischen einem Eingangs- und Ausgangsanschluss
KR20200078084A (ko) * 2018-12-21 2020-07-01 삼성전기주식회사 프론트 엔드 모듈
JP6939763B2 (ja) * 2018-12-25 2021-09-22 株式会社村田製作所 マルチプレクサ、高周波フロントエンド回路、および通信装置
CN111786069B (zh) * 2019-04-04 2021-09-21 上海诺基亚贝尔股份有限公司 谐振器和滤波器
CN110830072A (zh) * 2019-12-16 2020-02-21 惠州华芯半导体有限公司 基于pcb的射频双工器及移动终端
CN114244300A (zh) * 2020-09-09 2022-03-25 诺思(天津)微系统有限责任公司 滤波器组件及其制造方法、电子设备
CN113037246B (zh) * 2021-02-08 2023-05-26 苏州汉天下电子有限公司 双工器及其制作方法、多工器

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728223A (en) * 1980-07-26 1982-02-15 New Japan Radio Co Ltd Pyroelectric type radiation wave detector and manufacture thereof
CN85101813B (zh) * 1985-04-01 1987-05-20 株式会社日立制作所 表面声波滤波器
JP2625994B2 (ja) 1987-11-26 1997-07-02 株式会社デンソー 半導体圧力センサの製造方法
JPH06350307A (ja) * 1993-06-03 1994-12-22 Fuji Elelctrochem Co Ltd 分波器
US5506552A (en) * 1993-11-05 1996-04-09 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave filter with multiple ground terminals
JPH08191230A (ja) * 1995-01-09 1996-07-23 Fujitsu Ltd 分波器
JPH08321738A (ja) * 1995-05-24 1996-12-03 Matsushita Electric Ind Co Ltd 二周波数帯域通過フィルタ及び二周波数分波器及び二周波数合成器
JPH09270604A (ja) 1996-03-29 1997-10-14 Oki Electric Ind Co Ltd 分波器パッケ−ジ
US6081171A (en) 1998-04-08 2000-06-27 Nokia Mobile Phones Limited Monolithic filters utilizing thin film bulk acoustic wave devices and minimum passive components for controlling the shape and width of a passband response
US6427954B1 (en) 1998-12-04 2002-08-06 Original Design Group Low profile golf bag stand system
US6262637B1 (en) * 1999-06-02 2001-07-17 Agilent Technologies, Inc. Duplexer incorporating thin-film bulk acoustic resonators (FBARs)
JP2001068965A (ja) 1999-08-26 2001-03-16 Matsushita Electric Ind Co Ltd ラダー型フィルタ
JP2001127588A (ja) 1999-10-28 2001-05-11 Tdk Corp 弾性表面波分波器
DE19962028A1 (de) * 1999-12-22 2001-06-28 Philips Corp Intellectual Pty Filteranordnung
US6407649B1 (en) 2001-01-05 2002-06-18 Nokia Corporation Monolithic FBAR duplexer and method of making the same
WO2002058233A1 (en) * 2001-01-18 2002-07-25 Infineon Technologies Ag Filter devices and method for fabricating filter devices
US6462631B2 (en) 2001-02-14 2002-10-08 Agilent Technologies, Inc. Passband filter having an asymmetrical filter response
US6472954B1 (en) * 2001-04-23 2002-10-29 Agilent Technologies, Inc. Controlled effective coupling coefficients for film bulk acoustic resonators
US6710681B2 (en) * 2001-07-13 2004-03-23 Agilent Technologies, Inc. Thin film bulk acoustic resonator (FBAR) and inductor on a monolithic substrate and method of fabricating the same
FR2833106B1 (fr) * 2001-12-03 2005-02-25 St Microelectronics Sa Circuit integre comportant un composant auxiliaire, par exemple un composant passif ou un microsysteme electromecanique, dispose au-dessus d'une puce electronique, et procede de fabrication correspondant
JP2004048639A (ja) 2002-05-17 2004-02-12 Murata Mfg Co Ltd 圧電共振子及びその製造方法等
EP1535331B1 (de) 2002-03-19 2024-10-02 Murata Integrated Passive Solutions Verfahren zur Herstellung eines abgedichteten Hohlraumes
JP2003298392A (ja) * 2002-03-29 2003-10-17 Fujitsu Media Device Kk フィルタチップ及びフィルタ装置
JP2003318695A (ja) 2002-04-26 2003-11-07 Toko Inc 圧電薄膜共振子およびその製造方法
TW540173B (en) * 2002-05-03 2003-07-01 Asia Pacific Microsystems Inc Bulk acoustic device having integrated fine-tuning and trimming devices
JP2004017171A (ja) 2002-06-12 2004-01-22 Murata Mfg Co Ltd 電子部品およびその製造方法
DE60238001D1 (de) 2002-07-24 2010-11-25 Nisshin Steel Co Ltd Feuerverzinktes galvanisiertes zinkbasis-stahlblech mit ausgezeichneter beibehaltung des glanzes
KR20040011728A (ko) * 2002-07-30 2004-02-11 엘지이노텍 주식회사 듀플렉서 칩 패키지 및 그 제조방법
JP2004129223A (ja) 2002-07-31 2004-04-22 Murata Mfg Co Ltd 圧電部品およびその製造方法
US6713314B2 (en) * 2002-08-14 2004-03-30 Intel Corporation Hermetically packaging a microelectromechanical switch and a film bulk acoustic resonator
JP2004112277A (ja) 2002-09-18 2004-04-08 Murata Mfg Co Ltd 圧電薄膜フィルタ、分波器、通信機
US7152289B2 (en) * 2002-09-25 2006-12-26 Intel Corporation Method for forming bulk resonators silicon <110> substrate
KR100820556B1 (ko) * 2002-11-15 2008-04-07 엘지이노텍 주식회사 듀플렉서 제조방법
KR100486627B1 (ko) 2003-02-21 2005-05-03 엘지전자 주식회사 반도체 패키지
JP2004304622A (ja) * 2003-03-31 2004-10-28 Fujitsu Media Device Kk 弾性表面波デバイス及びその製造方法
KR100498041B1 (ko) 2003-04-18 2005-07-01 삼성전자주식회사 기판 접합을 이용하여 제조된 단일칩 듀플렉서 및 그 제조방법
EP1469599B1 (de) * 2003-04-18 2010-11-03 Samsung Electronics Co., Ltd. Dünnschicht-Resonator von Luftspaltbauart, Duplexer mit dem Resonator und deren Herstellungsverfahren
JP3853303B2 (ja) * 2003-04-28 2006-12-06 富士通メディアデバイス株式会社 分波器
KR100546832B1 (ko) 2003-08-21 2006-01-26 삼성전자주식회사 임베디드 ｐｃｂ 기판을 사용한 듀플렉서 및 그 제조 방법
US7183622B2 (en) * 2004-06-30 2007-02-27 Intel Corporation Module integrating MEMS and passive components
US7615833B2 (en) * 2004-07-13 2009-11-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator package and method of fabricating same

Also Published As

Publication number Publication date
JP4316557B2 (ja) 2009-08-19
KR100666693B1 (ko) 2007-01-11
US20060109065A1 (en) 2006-05-25
EP1659688A3 (de) 2007-09-12
KR20060057070A (ko) 2006-05-26
EP1659688B1 (de) 2010-01-13
EP1659688A2 (de) 2006-05-24
US20100095497A1 (en) 2010-04-22
DE602005018888D1 (de) 2010-03-04
US7663450B2 (en) 2010-02-16
JP2006148941A (ja) 2006-06-08
CN1783712A (zh) 2006-06-07
US8720023B2 (en) 2014-05-13
CN100474773C (zh) 2009-04-01

Similar Documents

Publication Publication Date Title
ATE455393T1 (de) Monolithischer duplexer
WO2006014247A3 (en) Interferometric modulators with thin film transistors and manufacturing method thereof
TW200620575A (en) Hollow type semiconductor apparatus and its manufacture
TW200603418A (en) A film bulk acoustic resonator package and method of fabricating same
TW516141B (en) Semiconductor device
EP1233446A3 (de) Thermisch aushärtbare Harzverbindung und Halbleitervorrichtung, die dieselbe verwendet
ATE427582T1 (de) Piezoelektrisches filter
TW200601561A (en) High-performance cmos soi devices on hybrid crystal-oriented substrates
TW200513678A (en) Joined multi functional optical device
WO2006055476A3 (en) Method of integrating optical devices and electronic devices on an integrated circuit
EP1620583A4 (de) Halbleitersubstrat, halbleitervorrichtung, leuchtdiode und herstellungsverfahren dafür
CA2299252A1 (en) Solid state microanemometer
DK0405393T3 (da) Anordning til pakning af hæfteklæbende substratstykker og anvendelse af anordningen
WO2002067425A3 (en) High performance double-gate latch
TW200709162A (en) Structure for circuit assembly
WO2002084782A3 (en) Antenna interface unit
DE602005012385D1 (de) Herstellung integrierter, akustischer Dünnschichtresonatoren (FBAR) mit unterschiedlichen Frequenzen
WO2005104231A3 (en) Multi-substrate circuit assembly
TW200510727A (en) Acceleration sensor
TW200633375A (en) Micro-resonator, frequency filter and communication apparatus
ATE283544T1 (de) Druckempfindlicher schalter
TW200610072A (en) Flip chip packaging manufacturing method and the device thereof
WO2005034179A3 (en) Integrated circuit suitable for use in radio receivers
WO2002060810A3 (en) Micro-element substrate interconnection
WO2003012842A3 (en) Semiconductor structure for monolithic switch matrix

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties