ATE456187T1 - Halbbrückentreiber und stromwandlersystem mit einem solchen treiber - Google Patents

Halbbrückentreiber und stromwandlersystem mit einem solchen treiber

Info

Publication number
ATE456187T1
ATE456187T1 AT02779847T AT02779847T ATE456187T1 AT E456187 T1 ATE456187 T1 AT E456187T1 AT 02779847 T AT02779847 T AT 02779847T AT 02779847 T AT02779847 T AT 02779847T AT E456187 T1 ATE456187 T1 AT E456187T1
Authority
AT
Austria
Prior art keywords
current
driver
generating
generator
voltage pulse
Prior art date
Application number
AT02779847T
Other languages
English (en)
Inventor
Ole Nielsen
Original Assignee
Bang & Olufsen Icepower As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bang & Olufsen Icepower As filed Critical Bang & Olufsen Icepower As
Application granted granted Critical
Publication of ATE456187T1 publication Critical patent/ATE456187T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/125—Discriminating pulses
    • H03K5/1252—Suppression or limitation of noise or interference
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
  • Power Conversion In General (AREA)
  • Automatic Cycles, And Cycles In General (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
  • Coils Or Transformers For Communication (AREA)
AT02779847T 2001-12-21 2002-12-05 Halbbrückentreiber und stromwandlersystem mit einem solchen treiber ATE456187T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0104400A SE0104400D0 (sv) 2001-12-21 2001-12-21 Half-bridge driver and power conversion system with such driver
PCT/IB2002/005152 WO2003055072A1 (en) 2001-12-21 2002-12-05 Half-bridge driver and power conversion system with such driver

Publications (1)

Publication Number Publication Date
ATE456187T1 true ATE456187T1 (de) 2010-02-15

Family

ID=20286496

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02779847T ATE456187T1 (de) 2001-12-21 2002-12-05 Halbbrückentreiber und stromwandlersystem mit einem solchen treiber

Country Status (11)

Country Link
US (1) US7323912B2 (de)
EP (1) EP1456951B1 (de)
JP (1) JP4235561B2 (de)
KR (1) KR100933651B1 (de)
CN (1) CN1248415C (de)
AT (1) ATE456187T1 (de)
AU (1) AU2002343177A1 (de)
DE (1) DE60235197D1 (de)
ES (1) ES2338304T3 (de)
SE (1) SE0104400D0 (de)
WO (1) WO2003055072A1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050085461A (ko) * 2002-12-10 2005-08-29 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 다운 컨버터 및 전기 부하 스위칭 방법
KR100568107B1 (ko) * 2003-10-24 2006-04-05 삼성전자주식회사 고속 및 저전력 전압 레벨 변환 회로
KR100600452B1 (ko) * 2004-12-29 2006-07-13 한국전기연구원 펄스 발생기를 위한 반도체 스위치 구동회로
WO2007003967A2 (en) 2005-07-06 2007-01-11 Cambridge Semiconductor Limited Switch mode power supply control systems
EP1770862B1 (de) * 2005-09-29 2008-04-02 Infineon Technologies AG Schaltkreis und adaptives Verfahren zum Antrieb einer Halbbrückenschaltung
US7710098B2 (en) 2005-12-16 2010-05-04 Cambridge Semiconductor Limited Power supply driver circuit
GB2433363A (en) * 2005-12-16 2007-06-20 Cambridge Semiconductor Ltd A high side transistor drive circuit
US7733098B2 (en) 2005-12-22 2010-06-08 Cambridge Semiconductor Limited Saturation detection circuits
US20070223154A1 (en) * 2006-03-21 2007-09-27 Christian Locatelli High side reset logic for gate driver
US7986926B2 (en) * 2006-09-27 2011-07-26 Silicon Laboratories Inc. Integrating an FM transmitter into a cellular telephone
KR100750734B1 (ko) * 2006-10-26 2007-08-22 삼성전자주식회사 광원구동회로 및 구동방법
JP5082574B2 (ja) * 2007-05-07 2012-11-28 三菱電機株式会社 半導体装置
US8044699B1 (en) * 2010-07-19 2011-10-25 Polar Semiconductor, Inc. Differential high voltage level shifter
US8405422B2 (en) * 2010-09-30 2013-03-26 Fuji Electric Co., Ltd. Level shift circuit
CN102468828B (zh) * 2010-11-03 2017-11-28 北京普源精电科技有限公司 一种波形发生器的脉冲边沿调控装置
KR101350545B1 (ko) * 2012-05-31 2014-01-13 삼성전기주식회사 레벨 변환 회로 및 그를 포함하는 게이트 드라이버 회로
US8633745B1 (en) * 2012-08-30 2014-01-21 Allegro Microsystems, Llc Circuits and related techniques for driving a high side of a half bridge circuit
US9509300B2 (en) 2013-05-24 2016-11-29 Dialog Semiconductor Gmbh Anti-shoot-through automatic multiple feedback gate drive control circuit
US9960620B2 (en) 2014-09-16 2018-05-01 Navitas Semiconductor, Inc. Bootstrap capacitor charging circuit for GaN devices
US9780639B2 (en) * 2015-01-19 2017-10-03 Infineon Technologies Austria Ag Protection from hard commutation events at power switches
US10116301B2 (en) * 2016-07-12 2018-10-30 Infineon Technologies Americas Corp. Cross-coupled, narrow pulse, high voltage level shifting circuit with voltage domain common mode rejection
US10230356B2 (en) 2017-02-27 2019-03-12 Allegro Microsystems, Llc High-side output transistor circuit
US10498212B2 (en) * 2017-05-26 2019-12-03 Dialog Semiconductor (Uk) Limited Gate driver
US10355674B2 (en) * 2017-07-24 2019-07-16 Arm Limited Clock gating circuit
US10164618B1 (en) * 2017-12-28 2018-12-25 Micron Technology, Inc. Jitter cancellation with automatic performance adjustment
US10833672B2 (en) * 2018-11-15 2020-11-10 Rohm Co., Ltd. Driving circuit for high-side transistor, switching circuit, and controller for DC/DC converter
CN112118003B (zh) * 2020-08-19 2025-03-07 苏州锴威特半导体股份有限公司 一种电平位移电路
JP2022144130A (ja) * 2021-03-18 2022-10-03 ローム株式会社 ハイサイドトランジスタの駆動回路、スイッチング回路、ｄｃ／ｄｃコンバータのコントローラ
CN115632553B (zh) * 2022-10-31 2025-12-16 西安微电子技术研究所 一种快速导通的高压驱动半桥电路
US12580570B2 (en) 2023-11-29 2026-03-17 Infineon Technologies Austria Ag Level shifter having a cross-coupled current mirror circuit for reducing or cancelling common mode slew current
US12597928B2 (en) * 2024-03-11 2026-04-07 Infineon Technologies Austria Ag Level shifter for power electronics circuits

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5283477A (en) * 1989-08-31 1994-02-01 Sharp Kabushiki Kaisha Common driver circuit
US4994955A (en) 1989-12-29 1991-02-19 North American Philips Corporation Half-bridge driver which is insensitive to common mode currents
US5105099A (en) 1991-03-01 1992-04-14 Harris Corporation Level shift circuit with common mode rejection
US5666280A (en) * 1993-05-07 1997-09-09 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a jet to emulate a bootstrap diode
US5418495A (en) 1994-05-18 1995-05-23 Elantec Input stage improvement for current feedback amplifiers
US5514981A (en) 1994-07-12 1996-05-07 International Rectifier Corporation Reset dominant level-shift circuit for noise immunity
US6353345B1 (en) * 2000-04-04 2002-03-05 Philips Electronics North America Corporation Low cost half bridge driver integrated circuit with capability of using high threshold voltage DMOS
JP3838083B2 (ja) * 2001-12-10 2006-10-25 サンケン電気株式会社 レベルシフト回路

Also Published As

Publication number Publication date
EP1456951A1 (de) 2004-09-15
US20050122754A1 (en) 2005-06-09
ES2338304T3 (es) 2010-05-06
SE0104400D0 (sv) 2001-12-21
AU2002343177A1 (en) 2003-07-09
CN1248415C (zh) 2006-03-29
EP1456951B1 (de) 2010-01-20
DE60235197D1 (de) 2010-03-11
WO2003055072A1 (en) 2003-07-03
JP2005513994A (ja) 2005-05-12
US7323912B2 (en) 2008-01-29
KR100933651B1 (ko) 2009-12-23
JP4235561B2 (ja) 2009-03-11
KR20040075024A (ko) 2004-08-26
CN1606831A (zh) 2005-04-13

Similar Documents

Publication Publication Date Title
ATE456187T1 (de) Halbbrückentreiber und stromwandlersystem mit einem solchen treiber
US7800924B2 (en) Power converter apparatus and methods using neutral coupling circuits with interleaved operation
Jena et al. A 6X-voltage-gain 13-level inverter with self-balanced switched-capacitors
Elgenedy et al. A high-gain, high-voltage pulse generator using sequentially charged modular multilevel converter submodules, for water disinfection applications
WO2003007464A3 (en) Trasformerless static voltage inverter for battery systems
EP1463188A3 (de) Schaltungsanordnung, Zusatzmodul und Photovoltaik-System
Mohamad et al. A new cascaded multilevel inverter topology with minimum number of conducting switches
ATE498940T1 (de) Differenztreiberstufe mit spannungssteuerung und verfahren
DE60117129T8 (de) Leistungsversorgung mit zweifachem eingangsbereich, welche zwei in reihe oder parallel geschaltete wandlerelemente mit automatischer leistungsverteilung verwendet
ES8305984A1 (es) Un inversor electronico de corriente continua en corriente alterna.
KR950002184A (ko) 전력변환장치
BR9811764A (pt) Inversor de energia de cc para ca trifásico com pólos de três nìveis
Ram et al. Development of high voltage pulse power supply for microwave tube applications
Ponkumar et al. Realization of cascaded multilevel inverter
Nguyen et al. A low-cost battery charger usable with sinusoidal ripple-current and pulse charging algorithms for e-bike applications
CN113381740A (zh) 一种用于等离子体放电的紧凑型混合式隔离Marx脉冲发生器
Hua et al. A novel dc voltage charge balance control for cascaded inverters
TW200603547A (en) D/A converter and driving circuit using the same
Menaka et al. Novel symmetric and asymmetric multilevel inverter topologies with minimum number of switches for high voltage of electric ship propulsion system
Thiyagarajan et al. Simulation of new symmetric and asymmetric multilevel inverter topology with reduced number of switches
Lee et al. Solid-state bipolar pulsed-power modulator based on a half-bridge power cell structure
Elgenedy et al. Low-voltage dc input, high-voltage pulse generator using nano-crystalline transformer and sequentially charged mmc sub-modules, for water treatment applications
Thamizharasan et al. A modular multilevel inverter with cascaded half bridge cells
JP2013090002A (ja) パルス発生装置及びパルス発生方法
EP1215809A3 (de) Stromrichtersystem zur Erhöhung einer Gleichspannung

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties