ATE457096T1 - Dünnschicht-volumenwellen-resonator (fbar) mit luftspalt und herstellungsmethode dafür - Google Patents

Dünnschicht-volumenwellen-resonator (fbar) mit luftspalt und herstellungsmethode dafür

Info

Publication number
ATE457096T1
ATE457096T1 AT04251965T AT04251965T ATE457096T1 AT E457096 T1 ATE457096 T1 AT E457096T1 AT 04251965 T AT04251965 T AT 04251965T AT 04251965 T AT04251965 T AT 04251965T AT E457096 T1 ATE457096 T1 AT E457096T1
Authority
AT
Austria
Prior art keywords
air gap
fbar
thin film
production method
wave resonator
Prior art date
Application number
AT04251965T
Other languages
English (en)
Inventor
Chan-Bong Jun
O-Gweon Seo
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of ATE457096T1 publication Critical patent/ATE457096T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Audible-Bandwidth Dynamoelectric Transducers Other Than Pickups (AREA)
AT04251965T 2003-04-21 2004-04-01 Dünnschicht-volumenwellen-resonator (fbar) mit luftspalt und herstellungsmethode dafür ATE457096T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2003-0025231A KR100485703B1 (ko) 2003-04-21 2003-04-21 기판으로부터 부양된 에어갭을 갖는 박막 벌크 음향공진기 및 그 제조방법

Publications (1)

Publication Number Publication Date
ATE457096T1 true ATE457096T1 (de) 2010-02-15

Family

ID=32960249

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04251965T ATE457096T1 (de) 2003-04-21 2004-04-01 Dünnschicht-volumenwellen-resonator (fbar) mit luftspalt und herstellungsmethode dafür

Country Status (6)

Country Link
US (1) US7119638B2 (de)
EP (1) EP1471636B1 (de)
JP (1) JP4327009B2 (de)
KR (1) KR100485703B1 (de)
AT (1) ATE457096T1 (de)
DE (1) DE602004025399D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100622955B1 (ko) * 2004-04-06 2006-09-18 삼성전자주식회사 박막 벌크 음향 공진기 및 그 제조방법
KR100609508B1 (ko) * 2004-12-24 2006-08-08 학교법인 성균관대학 에어갭 타입 에프비에이알장치 및 그 제조방법
US7248131B2 (en) * 2005-03-14 2007-07-24 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Monolithic vertical integration of an acoustic resonator and electronic circuitry
US7732241B2 (en) * 2005-11-30 2010-06-08 Semiconductor Energy Labortory Co., Ltd. Microstructure and manufacturing method thereof and microelectromechanical system
KR100718095B1 (ko) 2005-12-19 2007-05-16 삼성전자주식회사 결합 공진 필터 및 그 제작 방법
JP4315174B2 (ja) 2006-02-16 2009-08-19 セイコーエプソン株式会社 ラム波型高周波デバイスの製造方法
KR100719123B1 (ko) * 2006-07-27 2007-05-18 삼성전자주식회사 멀피 밴드 필터모듈 및 그 제조방법
JP4943787B2 (ja) * 2006-09-13 2012-05-30 太陽誘電株式会社 弾性波デバイス、共振器およびフィルタ
JP4997961B2 (ja) * 2006-12-26 2012-08-15 宇部興産株式会社 集積化分波器
JP2010123840A (ja) * 2008-11-21 2010-06-03 Fuji Electric Holdings Co Ltd 可動ゲート型電界効果トランジスタの製造方法
US8692631B2 (en) * 2009-10-12 2014-04-08 Hao Zhang Bulk acoustic wave resonator and method of fabricating same
US10658998B2 (en) 2013-07-31 2020-05-19 Oepic Semiconductors, Inc. Piezoelectric film transfer for acoustic resonators and filters
CN104202010B (zh) * 2014-08-28 2017-05-03 中国工程物理研究院电子工程研究所 一种镂空空腔型薄膜体声波谐振器及其制作方法
CN111262542B (zh) * 2020-02-27 2022-03-25 见闻录(浙江)半导体有限公司 一种具有散热结构的体声波谐振器及制造工艺
TWI721934B (zh) * 2020-10-22 2021-03-11 台灣奈米碳素股份有限公司 製造具特定共振頻率之薄膜體聲波共振裝置的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0618314B2 (ja) * 1987-10-09 1994-03-09 株式会社村田製作所 集積型共振子の製造方法
US6162367A (en) * 1997-01-22 2000-12-19 California Institute Of Technology Gas-phase silicon etching with bromine trifluoride
JP4326151B2 (ja) * 1998-05-08 2009-09-02 アバゴ・テクノロジーズ・ワイヤレス・アイピー（シンガポール）プライベート・リミテッド 薄膜圧電振動子
US6355498B1 (en) * 2000-08-11 2002-03-12 Agere Systems Guartian Corp. Thin film resonators fabricated on membranes created by front side releasing
US6486751B1 (en) * 2000-09-26 2002-11-26 Agere Systems Inc. Increased bandwidth thin film resonator having a columnar structure
KR100398363B1 (ko) * 2000-12-05 2003-09-19 삼성전기주식회사 Ｆｂａｒ 소자 및 그 제조방법
JP2005236337A (ja) * 2001-05-11 2005-09-02 Ube Ind Ltd 薄膜音響共振器及びその製造方法
JP3939939B2 (ja) * 2001-07-17 2007-07-04 富士通株式会社 圧電薄膜共振素子の製造方法
KR100616508B1 (ko) * 2002-04-11 2006-08-29 삼성전기주식회사 Ｆｂａｒ 소자 및 그 제조방법
KR100506729B1 (ko) * 2002-05-21 2005-08-08 삼성전기주식회사 박막 벌크 어코스틱 공진기（ＦＢＡＲｓ）소자 및 그제조방법

Also Published As

Publication number Publication date
KR20040091407A (ko) 2004-10-28
JP4327009B2 (ja) 2009-09-09
KR100485703B1 (ko) 2005-04-28
US7119638B2 (en) 2006-10-10
EP1471636A1 (de) 2004-10-27
DE602004025399D1 (de) 2010-03-25
JP2004328739A (ja) 2004-11-18
EP1471636B1 (de) 2010-02-03
US20040207490A1 (en) 2004-10-21

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