ATE457372T1 - Substrat für epitaxie und verfahren zu seiner herstellung - Google Patents

Substrat für epitaxie und verfahren zu seiner herstellung

Info

Publication number
ATE457372T1
ATE457372T1 AT03778843T AT03778843T ATE457372T1 AT E457372 T1 ATE457372 T1 AT E457372T1 AT 03778843 T AT03778843 T AT 03778843T AT 03778843 T AT03778843 T AT 03778843T AT E457372 T1 ATE457372 T1 AT E457372T1
Authority
AT
Austria
Prior art keywords
substrate
good
epitaxy
opto
dislocation density
Prior art date
Application number
AT03778843T
Other languages
English (en)
Inventor
Robert Dwilinski
Roman Doradzinski
Jerzy Garczynski
Leszek Sierzputowski
Yasuo Kanbara
Original Assignee
Ammono Sp Zoo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PL357696A external-priority patent/PL225423B1/pl
Priority claimed from PL357707A external-priority patent/PL225424B1/pl
Priority claimed from PL357709A external-priority patent/PL225425B1/pl
Priority claimed from PL02357708A external-priority patent/PL357708A1/xx
Application filed by Ammono Sp Zoo filed Critical Ammono Sp Zoo
Application granted granted Critical
Publication of ATE457372T1 publication Critical patent/ATE457372T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3258—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Semiconductor Lasers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adornments (AREA)
AT03778843T 2002-12-11 2003-12-11 Substrat für epitaxie und verfahren zu seiner herstellung ATE457372T1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
PL357696A PL225423B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania podłoża standaryzowanego warstwą epitaksjalną ( podłoża typu template), z objętościowego monokrystalicznego azotku zawierającego gal
PL357707A PL225424B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania podłoża typu template z objętościowego monokrystalicznego azotku zawierającego gal
PL357709A PL225425B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania złożonego podłoża standaryzowanego warstwą epitaksjalną (podłoża typu template) z objętościowego monokrystalicznego azotku zawierającego gal
PL02357708A PL357708A1 (en) 2002-12-11 2002-12-11 Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction
PCT/JP2003/015906 WO2004053210A1 (en) 2002-12-11 2003-12-11 A substrate for epitaxy and a method of preparing the same

Publications (1)

Publication Number Publication Date
ATE457372T1 true ATE457372T1 (de) 2010-02-15

Family

ID=32512483

Family Applications (2)

Application Number Title Priority Date Filing Date
AT03778842T ATE445722T1 (de) 2002-12-11 2003-12-11 Schabloneartiges substrat und verfahren zu seiner herstellung
AT03778843T ATE457372T1 (de) 2002-12-11 2003-12-11 Substrat für epitaxie und verfahren zu seiner herstellung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT03778842T ATE445722T1 (de) 2002-12-11 2003-12-11 Schabloneartiges substrat und verfahren zu seiner herstellung

Country Status (10)

Country Link
US (3) US7387677B2 (de)
EP (2) EP1576210B1 (de)
JP (2) JP4860927B2 (de)
KR (2) KR100789889B1 (de)
AT (2) ATE445722T1 (de)
AU (2) AU2003285768A1 (de)
DE (2) DE60329713D1 (de)
PL (2) PL224992B1 (de)
TW (2) TWI334229B (de)
WO (2) WO2004053210A1 (de)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6656615B2 (en) * 2001-06-06 2003-12-02 Nichia Corporation Bulk monocrystalline gallium nitride
WO2003043150A1 (en) * 2001-10-26 2003-05-22 Ammono Sp.Zo.O. Light emitting element structure using nitride bulk single crystal layer
US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
PL225427B1 (pl) * 2002-05-17 2017-04-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Struktura urządzenia emitującego światło, zwłaszcza do półprzewodnikowego urządzenia laserowego
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
TWI334890B (en) * 2002-12-11 2010-12-21 Ammono Sp Zoo Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
JP4860927B2 (ja) * 2002-12-11 2012-01-25 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン エピタキシ用基板及びその製造方法
US7351994B2 (en) * 2004-01-21 2008-04-01 Taiwan Semiconductor Manufacturing Company Noble high-k device
US8398767B2 (en) 2004-06-11 2013-03-19 Ammono S.A. Bulk mono-crystalline gallium-containing nitride and its application
PL371405A1 (pl) * 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US7772601B2 (en) * 2005-02-04 2010-08-10 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and method of fabricating the same
JP4563230B2 (ja) 2005-03-28 2010-10-13 昭和電工株式会社 ＡｌＧａＮ基板の製造方法
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
JP4277826B2 (ja) * 2005-06-23 2009-06-10 住友電気工業株式会社 窒化物結晶、窒化物結晶基板、エピ層付窒化物結晶基板、ならびに半導体デバイスおよびその製造方法
WO2007006001A2 (en) 2005-07-06 2007-01-11 International Rectifier Corporation Iii-nitride enhancement mode devices
US20070069225A1 (en) * 2005-09-27 2007-03-29 Lumileds Lighting U.S., Llc III-V light emitting device
US8101020B2 (en) * 2005-10-14 2012-01-24 Ricoh Company, Ltd. Crystal growth apparatus and manufacturing method of group III nitride crystal
US8349077B2 (en) * 2005-11-28 2013-01-08 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
EP1954857B1 (de) * 2005-12-02 2018-09-26 Crystal Is, Inc. Dotierte aluminiumnitridkristalle und herstellungsverfahren dafür
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
JP2007277074A (ja) * 2006-01-10 2007-10-25 Ngk Insulators Ltd 窒化アルミニウム単結晶の製造方法及び窒化アルミニウム単結晶
KR100714629B1 (ko) * 2006-03-17 2007-05-07 삼성전기주식회사 질화물 반도체 단결정 기판, 그 제조방법 및 이를 이용한수직구조 질화물 발광소자 제조방법
KR101155061B1 (ko) * 2006-03-22 2012-06-11 삼성코닝정밀소재 주식회사 질화물 반도체 기판 및 이의 제조방법
US9034103B2 (en) * 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
CN101454487B (zh) * 2006-03-30 2013-01-23 晶体公司 氮化铝块状晶体的可控掺杂方法
US8764903B2 (en) 2009-05-05 2014-07-01 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
US20100095882A1 (en) * 2008-10-16 2010-04-22 Tadao Hashimoto Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals
US8728234B2 (en) * 2008-06-04 2014-05-20 Sixpoint Materials, Inc. Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
US20070234946A1 (en) * 2006-04-07 2007-10-11 Tadao Hashimoto Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals
WO2007149487A2 (en) * 2006-06-21 2007-12-27 The Regents Of The University Of California Opto-electronic and electronic devices using n-face or m-plane gan substrate prepared with ammonothermal growth
WO2008042351A2 (en) 2006-10-02 2008-04-10 Illumitex, Inc. Led system and method
EP2100990A1 (de) 2006-10-16 2009-09-16 Mitsubishi Chemical Corporation Verfahren zur herstellung eines nitridhalbleiters, mittel zur erhöhung der kristallwachstumsrate, nitrideinkristall, wafer und vorrichtung
JP5125098B2 (ja) * 2006-12-26 2013-01-23 信越半導体株式会社 窒化物半導体自立基板の製造方法
JP2008160025A (ja) * 2006-12-26 2008-07-10 Sharp Corp 窒化物半導体発光素子
CN107059116B (zh) 2007-01-17 2019-12-31 晶体公司 引晶的氮化铝晶体生长中的缺陷减少
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
WO2008094464A2 (en) * 2007-01-26 2008-08-07 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
KR101488545B1 (ko) 2007-05-17 2015-02-02 미쓰비시 가가꾸 가부시키가이샤 Ｉｉｉ 족 질화물 반도체 결정의 제조 방법, ｉｉｉ 족 질화물 반도체 기판 및 반도체 발광 디바이스
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
TWI480435B (zh) * 2007-09-19 2015-04-11 Univ California 氮化鎵塊狀晶體（ｂｕｌｋ ｃｒｙｓｔａｌｓ）及其生長方法
US7829358B2 (en) 2008-02-08 2010-11-09 Illumitex, Inc. System and method for emitter layer shaping
EP2245218B1 (de) * 2008-02-25 2019-06-19 SixPoint Materials, Inc. Verfahren zur herstellung von gruppe-iii-nitridwafer und gruppe-iii-nitridwafer
JP2011523931A (ja) * 2008-05-28 2011-08-25 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 低濃度アルカリ金属保有の六方晶系ウルツ鉱型エピタキシャル層およびその生成方法
JP5631746B2 (ja) * 2008-06-04 2014-11-26 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物結晶を成長させるための高圧ベッセル、ならびに高圧ベッセルおよびｉｉｉ族窒化物結晶を用いてｉｉｉ族窒化物結晶を成長させる方法
JP5377521B2 (ja) 2008-06-12 2013-12-25 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物ウェハーを試験する方法および試験データを伴うｉｉｉ族窒化物ウェハー
JP5177084B2 (ja) * 2008-08-06 2013-04-03 住友電気工業株式会社 波長変換素子および波長変換素子の製造方法
WO2010053964A1 (en) * 2008-11-07 2010-05-14 The Regents Of The University Of California Novel vessel designs and relative placements of the source material and seed crystals with respect to the vessel for the ammonothermal growth of group-iii nitride crystals
WO2010060034A1 (en) * 2008-11-24 2010-05-27 Sixpoint Materials, Inc. METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH
JP4867981B2 (ja) * 2008-12-04 2012-02-01 住友電気工業株式会社 ＧａＮ結晶の成長方法
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US20100314551A1 (en) * 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
JP5310534B2 (ja) 2009-12-25 2013-10-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
US20120251428A1 (en) * 2010-03-04 2012-10-04 Satoru Morioka Crystal growing apparatus, method for manufacturing nitride compound semiconductor crystal, and nitride compound semiconductor crystal
PL224995B1 (pl) 2010-04-06 2017-02-28 Inst Wysokich Ciśnień Polskiej Akademii Nauk Podłoże do wzrostu epitaksjalnego
CN105951177B (zh) 2010-06-30 2018-11-02 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
US9142412B2 (en) 2011-02-03 2015-09-22 Soitec Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methods
US9082948B2 (en) 2011-02-03 2015-07-14 Soitec Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
US8436363B2 (en) 2011-02-03 2013-05-07 Soitec Metallic carrier for layer transfer and methods for forming the same
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
US8960657B2 (en) 2011-10-05 2015-02-24 Sunedison, Inc. Systems and methods for connecting an ingot to a wire saw
JP5888208B2 (ja) * 2011-11-18 2016-03-16 三菱化学株式会社 窒化物結晶の製造方法
JP5754391B2 (ja) * 2012-02-08 2015-07-29 豊田合成株式会社 Ｉｉｉ族窒化物半導体結晶の製造方法
CN103243389B (zh) * 2012-02-08 2016-06-08 丰田合成株式会社 制造第III族氮化物半导体单晶的方法及制造GaN衬底的方法
JP2014027092A (ja) * 2012-07-26 2014-02-06 Sharp Corp 半導体発光素子
JP6137197B2 (ja) 2012-12-17 2017-05-31 三菱化学株式会社 窒化ガリウム基板、および、窒化物半導体結晶の製造方法
JP6275817B2 (ja) 2013-03-15 2018-02-07 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 仮像電子及び光学電子装置に対する平面コンタクト
JP5999443B2 (ja) 2013-06-07 2016-09-28 豊田合成株式会社 ＩＩＩ 族窒化物半導体結晶の製造方法およびＧａＮ基板の製造方法
JP6015566B2 (ja) 2013-06-11 2016-10-26 豊田合成株式会社 ＩＩＩ 族窒化物半導体のエッチング方法およびＩＩＩ 族窒化物半導体結晶の製造方法およびＧａＮ基板の製造方法
JP6516738B2 (ja) 2013-07-11 2019-05-22 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物半導体を用いた電子デバイスおよびその製造方法、および該電子デバイスを製作するためのエピタキシャル多層ウエハ
JP2015115343A (ja) * 2013-12-09 2015-06-22 シャープ株式会社 窒化物半導体素子の製造方法
JP6264990B2 (ja) * 2014-03-26 2018-01-24 日亜化学工業株式会社 窒化物半導体基板の製造方法
CN108023001B (zh) * 2017-11-30 2020-03-10 武汉大学 蚀刻阻挡层结构、含其的外延片及该外延片的制作方法
US11087975B1 (en) * 2018-07-02 2021-08-10 United States Of America As Represented By The Secretary Of The Air Force Method for fabrication of orientation-patterned templates on common substrates
EP3915132A4 (de) * 2019-01-24 2022-03-23 The Regents of the University of California Verfahren zur verarbeitung von halbleiterfilmen mit reduzierter verdampfung und reduziertem abbau
CN113454272B (zh) * 2019-02-22 2024-03-08 三菱化学株式会社 GaN结晶和基板

Family Cites Families (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922703A (en) * 1974-04-03 1975-11-25 Rca Corp Electroluminescent semiconductor device
FR2514566A1 (fr) * 1982-02-02 1983-04-15 Bagratishvili Givi Dispositif emetteur de lumiere semi-conducteur a base de nitrure de gallium et procede de fabrication dudit dispositif
JPS6065798A (ja) 1983-09-19 1985-04-15 Toyota Central Res & Dev Lab Inc 窒化ガリウム単結晶の成長方法
CN1014535B (zh) 1988-12-30 1991-10-30 中国科学院物理研究所 利用改进的矿化剂生长磷酸钛氧钾单晶的方法
US5096860A (en) 1990-05-25 1992-03-17 Alcan International Limited Process for producing unagglomerated single crystals of aluminum nitride
KR920004181B1 (ko) 1990-09-13 1992-05-30 한국과학기술연구원 입방정질화붕소의 제조방법
US5190738A (en) 1991-06-17 1993-03-02 Alcan International Limited Process for producing unagglomerated single crystals of aluminum nitride
US5306662A (en) 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
US5456204A (en) 1993-05-28 1995-10-10 Alfa Quartz, C.A. Filtering flow guide for hydrothermal crystal growth
GB9412849D0 (en) * 1993-08-02 1994-08-17 Marketing Store Ltd Package
PL173917B1 (pl) * 1993-08-10 1998-05-29 Ct Badan Wysokocisnieniowych P Sposób wytwarzania krystalicznej struktury wielowarstwowej
CA2169927A1 (en) 1993-09-17 1995-03-23 Kevin Brown Pre-rinse for phosphating metal surfaces
US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US5599520A (en) 1994-11-03 1997-02-04 Garces; Juan M. Synthesis of crystalline porous solids in ammonia
US5777350A (en) 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5679965A (en) 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
JP3728332B2 (ja) 1995-04-24 2005-12-21 シャープ株式会社 化合物半導体発光素子
KR100326101B1 (ko) 1995-08-31 2002-10-09 가부시끼가이샤 도시바 반도체장치의제조방법및질화갈륨계반도체의성장방법
EP1081818B1 (de) 1995-09-18 2004-08-18 Hitachi, Ltd. Halbleiterlaser-Vorrichtungen
AU7346396A (en) * 1995-10-13 1997-04-30 Centrum Badan Wysokocisnieniowych Method of manufacturing epitaxial layers of gan or ga(a1,in)n on single crystal gan and mixed ga(a1,in)n substrates
JP3563869B2 (ja) * 1996-03-25 2004-09-08 トヨタ自動車株式会社 エンジン出力制御装置
CN1065289C (zh) 1996-07-22 2001-05-02 中国科学院物理研究所 一种制备掺杂钒酸盐单晶的水热生长方法
JP3179346B2 (ja) 1996-08-27 2001-06-25 松下電子工業株式会社 窒化ガリウム結晶の製造方法
JPH1084161A (ja) 1996-09-06 1998-03-31 Sumitomo Electric Ind Ltd 半導体レーザ及びその製造方法
US6031858A (en) 1996-09-09 2000-02-29 Kabushiki Kaisha Toshiba Semiconductor laser and method of fabricating same
US6542526B1 (en) 1996-10-30 2003-04-01 Hitachi, Ltd. Optical information processor and semiconductor light emitting device suitable for the same
JPH111399A (ja) 1996-12-05 1999-01-06 Lg Electron Inc 窒化ガリウム半導体単結晶基板の製造方法並びにその基板を用いた窒化ガリウムダイオード
CN100530719C (zh) 1997-01-09 2009-08-19 日亚化学工业株式会社 氮化物半导体元器件
US6677619B1 (en) 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US5868837A (en) 1997-01-17 1999-02-09 Cornell Research Foundation, Inc. Low temperature method of preparing GaN single crystals
PL184902B1 (pl) 1997-04-04 2003-01-31 Centrum Badan Wysokocisnieniowych Pan Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N
JP3491492B2 (ja) 1997-04-09 2004-01-26 松下電器産業株式会社 窒化ガリウム結晶の製造方法
CN1159750C (zh) 1997-04-11 2004-07-28 日亚化学工业株式会社 氮化物半导体的生长方法
US5888389A (en) 1997-04-24 1999-03-30 Hydroprocessing, L.L.C. Apparatus for oxidizing undigested wastewater sludges
PL183687B1 (pl) 1997-06-06 2002-06-28 Ct Badan Sposób wytwarzania półprzewodnikowych związków grupy A-B o przewodnictwie elektrycznym typu p i typu n
US6270569B1 (en) 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
GB2333520B (en) 1997-06-11 2000-04-26 Hitachi Cable GaN crystal growth method
TW519551B (en) 1997-06-11 2003-02-01 Hitachi Cable Methods of fabricating nitride crystals and nitride crystals obtained therefrom
US6593589B1 (en) 1998-01-30 2003-07-15 The University Of New Mexico Semiconductor nitride structures
US6249534B1 (en) 1998-04-06 2001-06-19 Matsushita Electronics Corporation Nitride semiconductor laser device
JPH11340576A (ja) 1998-05-28 1999-12-10 Sumitomo Electric Ind Ltd 窒化ガリウム系半導体デバイス
TW428331B (en) 1998-05-28 2001-04-01 Sumitomo Electric Industries Gallium nitride single crystal substrate and method of producing the same
JP4005701B2 (ja) * 1998-06-24 2007-11-14 シャープ株式会社 窒素化合物半導体膜の形成方法および窒素化合物半導体素子
TW413956B (en) 1998-07-28 2000-12-01 Sumitomo Electric Industries Fluorescent substrate LED
US6335546B1 (en) * 1998-07-31 2002-01-01 Sharp Kabushiki Kaisha Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device
JP2000091637A (ja) 1998-09-07 2000-03-31 Rohm Co Ltd 半導体発光素子の製法
US6423984B1 (en) 1998-09-10 2002-07-23 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride compound semiconductor
US6252261B1 (en) 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
JP3592553B2 (ja) * 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
EP1003227B1 (de) * 1998-11-06 2010-01-13 Panasonic Corporation Halbleitervorrichtung
TW498102B (en) 1998-12-28 2002-08-11 Futaba Denshi Kogyo Kk A process for preparing GaN fluorescent substance
US20020096674A1 (en) * 1999-01-08 2002-07-25 Cho Hak Dong Nucleation layer growth and lift-up of process for GaN wafer
US6372041B1 (en) 1999-01-08 2002-04-16 Gan Semiconductor Inc. Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis
JP2000216494A (ja) 1999-01-20 2000-08-04 Sanyo Electric Co Ltd 半導体発光素子およびその製造方法
EP1024524A2 (de) 1999-01-27 2000-08-02 Matsushita Electric Industrial Co., Ltd. Abscheidung von dielektrischen Schichten unter Verwendung von überkritischem CO2
US6177057B1 (en) 1999-02-09 2001-01-23 The United States Of America As Represented By The Secretary Of The Navy Process for preparing bulk cubic gallium nitride
JP3399392B2 (ja) * 1999-02-19 2003-04-21 株式会社村田製作所 半導体発光素子、およびその製造方法
KR100683875B1 (ko) 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저소자
JP3957918B2 (ja) 1999-05-17 2007-08-15 独立行政法人科学技術振興機構 窒化ガリウム単結晶の育成方法
US6592663B1 (en) 1999-06-09 2003-07-15 Ricoh Company Ltd. Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
KR100381742B1 (ko) 1999-06-30 2003-04-26 스미토모덴키고교가부시키가이샤 Ⅲ-ⅴ족 질화물반도체의 성장방법 및 기상성장장치
JP4329229B2 (ja) 1999-06-30 2009-09-09 住友電気工業株式会社 Ｉｉｉ−ｖ族窒化物半導体の成長方法および気相成長装置
FR2796657B1 (fr) 1999-07-20 2001-10-26 Thomson Csf Procede de synthese de materiaux massifs monocristallins en nitrures d'elements de la colonne iii du tableau de la classification periodique
JP3968920B2 (ja) 1999-08-10 2007-08-29 双葉電子工業株式会社 蛍光体
JP4646359B2 (ja) 1999-09-09 2011-03-09 シャープ株式会社 窒化物半導体発光素子の製造方法
JP2001085737A (ja) 1999-09-10 2001-03-30 Sharp Corp 窒化物半導体発光素子
US6265322B1 (en) 1999-09-21 2001-07-24 Agere Systems Guardian Corp. Selective growth process for group III-nitride-based semiconductors
CN1113988C (zh) 1999-09-29 2003-07-09 中国科学院物理研究所 一种氮化镓单晶的热液生长方法
US6398867B1 (en) 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride
EP1104031B1 (de) 1999-11-15 2012-04-11 Panasonic Corporation Nitrid-Halbleiterlaserdiode und deren Herstellungsverfahren
JP2001168385A (ja) 1999-12-06 2001-06-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体発光素子
US6653663B2 (en) 1999-12-06 2003-11-25 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor device
JP2001185718A (ja) * 1999-12-24 2001-07-06 Hitachi Cable Ltd 窒化ガリウム系化合物半導体を用いた高電子移動度トランジスタ用エピタキシャルウェハの製造方法
US7315599B1 (en) 1999-12-29 2008-01-01 Intel Corporation Skew correction circuit
US6355497B1 (en) 2000-01-18 2002-03-12 Xerox Corporation Removable large area, low defect density films for led and laser diode growth
JP3335974B2 (ja) 2000-01-24 2002-10-21 星和電機株式会社 窒化ガリウム系半導体発光素子及びその製造方法
US20010015437A1 (en) 2000-01-25 2001-08-23 Hirotatsu Ishii GaN field-effect transistor, inverter device, and production processes therefor
JP4429459B2 (ja) 2000-03-03 2010-03-10 古河電気工業株式会社 高抵抗ＧａＮ結晶層の製造方法
US6447604B1 (en) 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
US6596079B1 (en) 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
JP3946427B2 (ja) 2000-03-29 2007-07-18 株式会社東芝 エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法
WO2001080311A1 (en) * 2000-04-17 2001-10-25 Virginia Commonwealth University Defect reduction in gan and related materials
JP2001339121A (ja) 2000-05-29 2001-12-07 Sharp Corp 窒化物半導体発光素子とそれを含む光学装置
GB2363518A (en) 2000-06-17 2001-12-19 Sharp Kk A method of growing a nitride layer on a GaN substrate
US6693935B2 (en) 2000-06-20 2004-02-17 Sony Corporation Semiconductor laser
JP2002016285A (ja) 2000-06-27 2002-01-18 National Institute Of Advanced Industrial & Technology 半導体発光素子
US6586762B2 (en) 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP3968968B2 (ja) * 2000-07-10 2007-08-29 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法
US6749819B2 (en) 2000-07-28 2004-06-15 Japan Pionics Co., Ltd. Process for purifying ammonia
JP4190711B2 (ja) 2000-08-31 2008-12-03 株式会社リコー Ｉｉｉ族窒化物結晶の結晶製造方法および結晶製造装置
JP4154558B2 (ja) 2000-09-01 2008-09-24 日本電気株式会社 半導体装置
WO2002021604A1 (en) 2000-09-08 2002-03-14 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device and optical device including the same
JP4416297B2 (ja) 2000-09-08 2010-02-17 シャープ株式会社 窒化物半導体発光素子、ならびにそれを使用した発光装置および光ピックアップ装置
JP2002094189A (ja) 2000-09-14 2002-03-29 Sharp Corp 窒化物半導体レーザ素子およびそれを用いた光学装置
JP2002134416A (ja) 2000-10-19 2002-05-10 Ricoh Co Ltd ｐ型３族窒化物の結晶成長方法および製造方法、並びに半導体素子
US7053413B2 (en) 2000-10-23 2006-05-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
US6936488B2 (en) 2000-10-23 2005-08-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
JP4063520B2 (ja) 2000-11-30 2008-03-19 日本碍子株式会社 半導体発光素子
AU2002219978A1 (en) 2000-11-30 2002-06-11 Kyma Technologies, Inc. Method and apparatus for producing miiin columns and miiin materials grown thereon
JP4003413B2 (ja) 2000-12-11 2007-11-07 日亜化学工業株式会社 １３族窒化物結晶の製造方法
JP3785566B2 (ja) 2001-03-19 2006-06-14 株式会社日鉱マテリアルズ ＧａＮ系化合物半導体結晶の製造方法
US6806508B2 (en) 2001-04-20 2004-10-19 General Electic Company Homoepitaxial gallium nitride based photodetector and method of producing
JP4633962B2 (ja) 2001-05-18 2011-02-16 日亜化学工業株式会社 窒化物半導体基板の製造方法
PL207400B1 (pl) 2001-06-06 2010-12-31 Ammono Społka Z Ograniczoną Odpowiedzialnością Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal
US6734530B2 (en) 2001-06-06 2004-05-11 Matsushita Electric Industries Co., Ltd. GaN-based compound semiconductor EPI-wafer and semiconductor element using the same
US6656615B2 (en) 2001-06-06 2003-12-02 Nichia Corporation Bulk monocrystalline gallium nitride
US6488767B1 (en) 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
JP2002009392A (ja) 2001-06-22 2002-01-11 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
US6562466B2 (en) 2001-07-02 2003-05-13 Essilor International Compagnie Generale D'optique Process for transferring a coating onto a surface of a lens blank
ATE452999T1 (de) * 2001-10-26 2010-01-15 Ammono Sp Zoo Substrat für epitaxie
WO2003043150A1 (en) * 2001-10-26 2003-05-22 Ammono Sp.Zo.O. Light emitting element structure using nitride bulk single crystal layer
US6949140B2 (en) 2001-12-05 2005-09-27 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US7097707B2 (en) 2001-12-31 2006-08-29 Cree, Inc. GaN boule grown from liquid melt using GaN seed wafers
US20030209191A1 (en) 2002-05-13 2003-11-13 Purdy Andrew P. Ammonothermal process for bulk synthesis and growth of cubic GaN
PL225427B1 (pl) 2002-05-17 2017-04-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Struktura urządzenia emitującego światło, zwłaszcza do półprzewodnikowego urządzenia laserowego
JP4403067B2 (ja) 2002-05-17 2010-01-20 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 超臨界アンモニアを用いるバルク単結晶生産設備
US20060138431A1 (en) 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
AU2003238980A1 (en) 2002-06-26 2004-01-19 Ammono Sp. Z O.O. Process for obtaining of bulk monocrystallline gallium-containing nitride
KR20050054482A (ko) 2002-06-26 2005-06-10 암모노 에스피. 제트오. 오. 질화물 반도체 레이저 디바이스 및 그의 성능을향상시키기 위한 방법
US7099073B2 (en) * 2002-09-27 2006-08-29 Lucent Technologies Inc. Optical frequency-converters based on group III-nitrides
JP4860927B2 (ja) * 2002-12-11 2012-01-25 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン エピタキシ用基板及びその製造方法
WO2004053208A1 (en) 2002-12-11 2004-06-24 Ammono Sp. Z O.O. Process for obtaining bulk-crystalline gallium-containing nitride
TWI334890B (en) 2002-12-11 2010-12-21 Ammono Sp Zoo Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
CN100390329C (zh) 2003-04-03 2008-05-28 三菱化学株式会社 氧化锌单晶
EP1759408A1 (de) 2004-06-11 2007-03-07 AMMONO Sp.z o.o. Aus schichten von gruppe-xiii-element-nitriden bestehender transistor mit hoher elektronenmobilität (hemt) und herstellungsverfahren dafür
US8398767B2 (en) 2004-06-11 2013-03-19 Ammono S.A. Bulk mono-crystalline gallium-containing nitride and its application
PL371405A1 (pl) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US7704324B2 (en) 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
US20070234946A1 (en) 2006-04-07 2007-10-11 Tadao Hashimoto Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals
JP5883552B2 (ja) 2006-10-25 2016-03-15 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Ｉｉｉ族窒化物結晶を安熱法成長させる方法
TWI480435B (zh) 2007-09-19 2015-04-11 Univ California 氮化鎵塊狀晶體（ｂｕｌｋ ｃｒｙｓｔａｌｓ）及其生長方法

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US7410539B2 (en) 2008-08-12
PL224992B1 (pl) 2017-02-28
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DE60329713D1 (de) 2009-11-26
AU2003285769A1 (en) 2004-06-30
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