ATE457524T1 - Verfahren zur verbesserung der inversionsschicht- beweglichkeit einer metal-oxyd-halbleiter feldeffekttransistor aus siliziumcarbid - Google Patents

Verfahren zur verbesserung der inversionsschicht- beweglichkeit einer metal-oxyd-halbleiter feldeffekttransistor aus siliziumcarbid

Info

Publication number
ATE457524T1
ATE457524T1 AT02735872T AT02735872T ATE457524T1 AT E457524 T1 ATE457524 T1 AT E457524T1 AT 02735872 T AT02735872 T AT 02735872T AT 02735872 T AT02735872 T AT 02735872T AT E457524 T1 ATE457524 T1 AT E457524T1
Authority
AT
Austria
Prior art keywords
silicon carbide
effect transistor
semiconductor field
improving
metal
Prior art date
Application number
AT02735872T
Other languages
English (en)
Inventor
Richard Egloff
Satyendranath Mukherjee
Dev Alok
Emil Arnold
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE457524T1 publication Critical patent/ATE457524T1/de

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01366—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the semiconductor being silicon carbide

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Carbon And Carbon Compounds (AREA)
AT02735872T 2001-06-28 2002-06-14 Verfahren zur verbesserung der inversionsschicht- beweglichkeit einer metal-oxyd-halbleiter feldeffekttransistor aus siliziumcarbid ATE457524T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/894,089 US6559068B2 (en) 2001-06-28 2001-06-28 Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor
PCT/IB2002/002299 WO2003003435A2 (en) 2001-06-28 2002-06-14 Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor

Publications (1)

Publication Number Publication Date
ATE457524T1 true ATE457524T1 (de) 2010-02-15

Family

ID=25402591

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02735872T ATE457524T1 (de) 2001-06-28 2002-06-14 Verfahren zur verbesserung der inversionsschicht- beweglichkeit einer metal-oxyd-halbleiter feldeffekttransistor aus siliziumcarbid

Country Status (8)

Country Link
US (1) US6559068B2 (de)
EP (1) EP1430518B1 (de)
JP (1) JP2004533727A (de)
KR (1) KR20040014978A (de)
CN (1) CN1302521C (de)
AT (1) ATE457524T1 (de)
DE (1) DE60235313D1 (de)
WO (1) WO2003003435A2 (de)

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Publication number Priority date Publication date Assignee Title
US7058941B1 (en) * 2000-11-14 2006-06-06 Microsoft Corporation Minimum delta generator for program binaries
JP4525958B2 (ja) * 2001-08-27 2010-08-18 独立行政法人産業技術総合研究所 半導体装置の製造方法
US6788136B2 (en) * 2001-10-25 2004-09-07 General Electric Company Methods and apparatus for amplification in high temperature environments
DE10336404B3 (de) 2003-08-06 2005-05-04 Adams, Michael Überwachungseinrichtung für Datenverarbeitungsanlagen
JP4437785B2 (ja) * 2003-08-12 2010-03-24 日本碍子株式会社 炭化珪素質触媒体の製造方法
US20050269621A1 (en) * 2004-06-03 2005-12-08 Micron Technology, Inc. Flash memory devices on silicon carbide
CN101361189B (zh) * 2005-01-25 2011-02-16 莫克斯托尼克斯股份有限公司 高性能fet器件和方法
US7727904B2 (en) * 2005-09-16 2010-06-01 Cree, Inc. Methods of forming SiC MOSFETs with high inversion layer mobility
US7572741B2 (en) 2005-09-16 2009-08-11 Cree, Inc. Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
US20070096107A1 (en) * 2005-11-03 2007-05-03 Brown Dale M Semiconductor devices with dielectric layers and methods of fabricating same
CN1862202B (zh) * 2006-05-28 2010-05-12 南昌大学 高纯稀有金属冶炼炉炉衬的制备方法
JP5098295B2 (ja) * 2006-10-30 2012-12-12 株式会社デンソー 炭化珪素半導体装置の製造方法
DE102008042035A1 (de) * 2008-09-12 2010-03-18 Robert Bosch Gmbh Halbleiteranordnung sowie Verfahren zum Herstellen einer Halbleiteranordnung
CN102169104A (zh) * 2010-12-22 2011-08-31 重庆邮电大学 基于SiC的MOSFET的汽车发动机用氧传感器
US9984894B2 (en) 2011-08-03 2018-05-29 Cree, Inc. Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
JP2015177073A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置およびその製造方法
CN104716045A (zh) * 2015-02-28 2015-06-17 上海芯亮电子科技有限公司 改善SiC热氧化后的界面态的制造方法
CN105206513B (zh) * 2015-09-28 2018-01-09 安徽工业大学 用氮和硼改善4H‑SiC MOSFET反型层迁移率的方法
US11345639B2 (en) * 2018-03-22 2022-05-31 Sumitomo Osaka Cement Co., Ltd. Composite sintered body, electrostatic chuck member, electrostatic chuck device, and method for producing composite sintered body
CN111668088B (zh) * 2020-04-27 2025-07-11 全球能源互联网研究院有限公司 一种碳化硅衬底的处理方法

Family Cites Families (4)

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Publication number Priority date Publication date Assignee Title
US4499147A (en) * 1981-12-28 1985-02-12 Ibiden Co., Ltd. Silicon carbide substrates and a method of producing the same
JP2937817B2 (ja) * 1995-08-01 1999-08-23 松下電子工業株式会社 半導体基板表面の酸化膜の形成方法及びｍｏｓ半導体デバイスの製造方法
US5972801A (en) * 1995-11-08 1999-10-26 Cree Research, Inc. Process for reducing defects in oxide layers on silicon carbide
JP3085272B2 (ja) * 1997-12-19 2000-09-04 富士電機株式会社 炭化けい素半導体装置の熱酸化膜形成方法

Also Published As

Publication number Publication date
CN1302521C (zh) 2007-02-28
CN1531744A (zh) 2004-09-22
WO2003003435A2 (en) 2003-01-09
WO2003003435A3 (en) 2004-04-29
US6559068B2 (en) 2003-05-06
EP1430518B1 (de) 2010-02-10
US20030008442A1 (en) 2003-01-09
KR20040014978A (ko) 2004-02-18
EP1430518A2 (de) 2004-06-23
JP2004533727A (ja) 2004-11-04
DE60235313D1 (de) 2010-03-25

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