ATE531076T1 - Verfahren zur verbesserung der mobilität einer inversionsschicht in einem siliciumcarbid-mosfet - Google Patents

Verfahren zur verbesserung der mobilität einer inversionsschicht in einem siliciumcarbid-mosfet

Info

Publication number
ATE531076T1
ATE531076T1 AT07826201T AT07826201T ATE531076T1 AT E531076 T1 ATE531076 T1 AT E531076T1 AT 07826201 T AT07826201 T AT 07826201T AT 07826201 T AT07826201 T AT 07826201T AT E531076 T1 ATE531076 T1 AT E531076T1
Authority
AT
Austria
Prior art keywords
sic substrate
oxide
density
mobility
inversion layer
Prior art date
Application number
AT07826201T
Other languages
English (en)
Inventor
Thomas Roedle
Einar O Sveinbjornsson
Halldor O Olafsson
Gudjon I Gudjonsson
Carl F Allerstam
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE531076T1 publication Critical patent/ATE531076T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AT07826201T 2006-09-01 2007-08-29 Verfahren zur verbesserung der mobilität einer inversionsschicht in einem siliciumcarbid-mosfet ATE531076T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06119975 2006-09-01
PCT/IB2007/053484 WO2008026181A1 (en) 2006-09-01 2007-08-29 Method for improving inversion layer mobility in a silicon carbide mosfet

Publications (1)

Publication Number Publication Date
ATE531076T1 true ATE531076T1 (de) 2011-11-15

Family

ID=38858969

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07826201T ATE531076T1 (de) 2006-09-01 2007-08-29 Verfahren zur verbesserung der mobilität einer inversionsschicht in einem siliciumcarbid-mosfet

Country Status (6)

Country Link
US (1) US8012818B2 (de)
EP (1) EP2062289B1 (de)
JP (1) JP2010502031A (de)
CN (1) CN101512727B (de)
AT (1) ATE531076T1 (de)
WO (1) WO2008026181A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8217398B2 (en) 2008-10-15 2012-07-10 General Electric Company Method for the formation of a gate oxide on a SiC substrate and SiC substrates and devices prepared thereby
US20100123140A1 (en) * 2008-11-20 2010-05-20 General Electric Company SiC SUBSTRATES, SEMICONDUCTOR DEVICES BASED UPON THE SAME AND METHODS FOR THEIR MANUFACTURE
JP2011119512A (ja) * 2009-12-04 2011-06-16 Denso Corp 半導体装置およびその製造方法
US8603348B2 (en) 2011-01-14 2013-12-10 Headway Technologies, Inc. Method of reducing main pole corrosion during aluminum oxide etch
JP5455973B2 (ja) 2011-05-27 2014-03-26 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP6015745B2 (ja) * 2012-03-19 2016-10-26 富士電機株式会社 半導体装置の製造方法
JP5939626B2 (ja) * 2012-04-27 2016-06-22 国立研究開発法人産業技術総合研究所 炭化珪素半導体素子の製造方法
JP6237046B2 (ja) * 2013-09-25 2017-11-29 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6292926B2 (ja) * 2013-11-08 2018-03-14 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6535773B2 (ja) * 2013-11-08 2019-06-26 住友電気工業株式会社 炭化珪素半導体装置
WO2015137420A1 (ja) * 2014-03-11 2015-09-17 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
CN104716045A (zh) * 2015-02-28 2015-06-17 上海芯亮电子科技有限公司 改善SiC热氧化后的界面态的制造方法
JP6667809B2 (ja) * 2016-05-30 2020-03-18 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
JP6863479B2 (ja) * 2017-12-14 2021-04-21 富士電機株式会社 半導体装置およびその製造方法
KR20210117005A (ko) 2020-03-18 2021-09-28 삼성전자주식회사 수소가 함유된 산화물층을 포함하는 반도체 소자 및 커패시터
CN115036222B (zh) * 2022-05-20 2025-10-14 浙江超晶晟锐光电有限公司 SiC/SiO2界面结构、SiC MOS器件及其制备方法
CN114678441B (zh) * 2022-05-30 2022-09-13 陕西半导体先导技术中心有限公司 基于预氧化处理技术的4H-SiC场效应光电晶体管及制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648282A (en) * 1992-06-26 1997-07-15 Matsushita Electronics Corporation Autodoping prevention and oxide layer formation apparatus
US5972801A (en) * 1995-11-08 1999-10-26 Cree Research, Inc. Process for reducing defects in oxide layers on silicon carbide
DE19829309B4 (de) * 1997-07-04 2008-02-07 Fuji Electric Co., Ltd., Kawasaki Verfahren zur Herstellung eines thermischen Oxidfilms auf Siliciumcarbid
US7067176B2 (en) * 2000-10-03 2006-06-27 Cree, Inc. Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
EP1323185B1 (de) 2000-10-03 2011-07-27 Cree, Inc. Verfahren zur herstellung von einer oxydschicht auf einem siliziumkarbidschicht mittels n2o
DE10394374B4 (de) * 2002-06-28 2013-02-21 National Institute Of Advanced Industrial Science And Technology Halbleitervorrichtung und Verfahren zur Herstellung derselben
US8188538B2 (en) * 2008-12-25 2012-05-29 Rohm Co., Ltd. Semiconductor device and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
CN101512727A (zh) 2009-08-19
EP2062289A1 (de) 2009-05-27
US8012818B2 (en) 2011-09-06
EP2062289B1 (de) 2011-10-26
JP2010502031A (ja) 2010-01-21
US20100006860A1 (en) 2010-01-14
CN101512727B (zh) 2011-04-20
WO2008026181A1 (en) 2008-03-06

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