ATE458268T1 - Einstufige pendeo- oder laterale epitaxie von gruppe iii-nitridschichten - Google Patents
Einstufige pendeo- oder laterale epitaxie von gruppe iii-nitridschichtenInfo
- Publication number
- ATE458268T1 ATE458268T1 AT00970767T AT00970767T ATE458268T1 AT E458268 T1 ATE458268 T1 AT E458268T1 AT 00970767 T AT00970767 T AT 00970767T AT 00970767 T AT00970767 T AT 00970767T AT E458268 T1 ATE458268 T1 AT E458268T1
- Authority
- AT
- Austria
- Prior art keywords
- mask
- gallium nitride
- substrate
- layer
- pendeo
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
- H10P14/276—Lateral overgrowth
- H10P14/278—Pendeoepitaxy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
- H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
- H10P14/276—Lateral overgrowth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3216—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3416—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15929999P | 1999-10-14 | 1999-10-14 | |
| PCT/US2000/028056 WO2001027980A1 (en) | 1999-10-14 | 2000-10-11 | Single step pendeo- and lateral epitaxial overgrowth of group iii-nitride layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE458268T1 true ATE458268T1 (de) | 2010-03-15 |
Family
ID=22571960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT00970767T ATE458268T1 (de) | 1999-10-14 | 2000-10-11 | Einstufige pendeo- oder laterale epitaxie von gruppe iii-nitridschichten |
Country Status (13)
| Country | Link |
|---|---|
| EP (1) | EP1222685B1 (de) |
| JP (1) | JP4947867B2 (de) |
| KR (1) | KR100751959B1 (de) |
| CN (1) | CN1183577C (de) |
| AT (1) | ATE458268T1 (de) |
| AU (1) | AU8009500A (de) |
| CA (1) | CA2386329A1 (de) |
| DE (1) | DE60043854D1 (de) |
| HK (1) | HK1045760A1 (de) |
| MX (1) | MXPA02003749A (de) |
| MY (5) | MY125503A (de) |
| TW (1) | TW488082B (de) |
| WO (1) | WO2001027980A1 (de) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3441415B2 (ja) | 1999-12-13 | 2003-09-02 | 三菱電線工業株式会社 | 半導体結晶の製造方法 |
| JP3471700B2 (ja) | 1999-03-17 | 2003-12-02 | 三菱電線工業株式会社 | 半導体基材 |
| JP2004007009A (ja) * | 1999-11-15 | 2004-01-08 | Matsushita Electric Ind Co Ltd | 窒化物半導体素子の製造方法 |
| US6403451B1 (en) | 2000-02-09 | 2002-06-11 | Noerh Carolina State University | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts |
| AU2001279163A1 (en) | 2000-08-04 | 2002-02-18 | The Regents Of The University Of California | Method of controlling stress in gallium nitride films deposited on substrates |
| US6649287B2 (en) | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
| KR100425680B1 (ko) * | 2001-07-12 | 2004-04-03 | 엘지전자 주식회사 | 질화물 반도체 박막 형성방법 |
| JP4784012B2 (ja) * | 2001-07-27 | 2011-09-28 | 日亜化学工業株式会社 | 窒化物半導体基板、及びその製造方法 |
| DE10142656A1 (de) * | 2001-08-31 | 2003-03-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterschichten auf III-V-Nitridhalbleiter-Basis |
| KR100437775B1 (ko) * | 2001-10-11 | 2004-06-30 | 엘지전자 주식회사 | 질화물 반도체 기판 제조방법 |
| DE10252060B4 (de) * | 2002-11-08 | 2006-10-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung einer Vielzahl von Halbleiterschichten |
| KR20050077902A (ko) * | 2004-01-29 | 2005-08-04 | 엘지전자 주식회사 | 질화물 반도체 박막의 성장 방법 |
| CN100433261C (zh) * | 2005-03-18 | 2008-11-12 | 夏普株式会社 | 氮化物半导体器件制造方法 |
| TW200703463A (en) | 2005-05-31 | 2007-01-16 | Univ California | Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) |
| US9331192B2 (en) | 2005-06-29 | 2016-05-03 | Cree, Inc. | Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same |
| JP4772565B2 (ja) * | 2006-04-03 | 2011-09-14 | 三菱電機株式会社 | 半導体装置の製造方法 |
| TW200828624A (en) * | 2006-12-27 | 2008-07-01 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
| KR100901822B1 (ko) * | 2007-09-11 | 2009-06-09 | 주식회사 실트론 | 질화갈륨 성장용 기판 및 질화갈륨 기판 제조 방법 |
| US8680581B2 (en) | 2008-12-26 | 2014-03-25 | Toyoda Gosei Co., Ltd. | Method for producing group III nitride semiconductor and template substrate |
| KR101810609B1 (ko) | 2011-02-14 | 2017-12-20 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
| CN102169287B (zh) * | 2011-05-31 | 2012-08-22 | 北京大学 | 一种光刻掩膜版及其制备方法 |
| KR20130035024A (ko) | 2011-09-29 | 2013-04-08 | 삼성전자주식회사 | 고 전자 이동도 트랜지스터 및 그 제조방법 |
| EP2837021A4 (de) * | 2012-04-13 | 2016-03-23 | Tandem Sun Ab | Verfahren und vorrichtung zur herstellung eines halbleiters auf basis eines epitaxialwachstums |
| WO2014126055A1 (ja) * | 2013-02-15 | 2014-08-21 | 国立大学法人東京大学 | 半導体集積回路基板およびその製造方法 |
| US20150059640A1 (en) * | 2013-08-27 | 2015-03-05 | Raytheon Company | Method for reducing growth of non-uniformities and autodoping during column iii-v growth into dielectric windows |
| CN106910805B (zh) * | 2017-03-31 | 2019-05-03 | 西安电子科技大学 | 基于m面LiAlO2衬底的m面Ⅲ族氮化物的发光二极管 |
| CN107146831B (zh) * | 2017-03-31 | 2019-05-07 | 西安电子科技大学 | 基于r面Al2O3衬底的a面Ⅲ族氮化物的发光二极管 |
| US12051765B2 (en) * | 2019-01-16 | 2024-07-30 | The Regents Of The Univerity Of California | Method for removal of devices using a trench |
| CN114597118A (zh) * | 2022-02-22 | 2022-06-07 | 上海华虹宏力半导体制造有限公司 | 一种GaN衬底及其制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4971928A (en) * | 1990-01-16 | 1990-11-20 | General Motors Corporation | Method of making a light emitting semiconductor having a rear reflecting surface |
| JP3139445B2 (ja) * | 1997-03-13 | 2001-02-26 | 日本電気株式会社 | ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜 |
| JPH11135832A (ja) * | 1997-10-26 | 1999-05-21 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体及びその製造方法 |
| EP1041610B1 (de) * | 1997-10-30 | 2010-12-15 | Sumitomo Electric Industries, Ltd. | Gan einkristall-substrat und herstellungsmethode |
| JPH11145515A (ja) * | 1997-11-10 | 1999-05-28 | Mitsubishi Cable Ind Ltd | ＧａＮ系半導体発光素子およびその製造方法 |
| JP3620269B2 (ja) * | 1998-02-27 | 2005-02-16 | 豊田合成株式会社 | ＧａＮ系半導体素子の製造方法 |
| JP3988245B2 (ja) * | 1998-03-12 | 2007-10-10 | ソニー株式会社 | 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法および半導体装置の製造方法 |
-
2000
- 2000-10-11 CN CNB008141894A patent/CN1183577C/zh not_active Expired - Lifetime
- 2000-10-11 AU AU80095/00A patent/AU8009500A/en not_active Abandoned
- 2000-10-11 EP EP00970767A patent/EP1222685B1/de not_active Expired - Lifetime
- 2000-10-11 JP JP2001530903A patent/JP4947867B2/ja not_active Expired - Lifetime
- 2000-10-11 DE DE60043854T patent/DE60043854D1/de not_active Expired - Lifetime
- 2000-10-11 CA CA002386329A patent/CA2386329A1/en not_active Abandoned
- 2000-10-11 KR KR1020027004609A patent/KR100751959B1/ko not_active Expired - Lifetime
- 2000-10-11 WO PCT/US2000/028056 patent/WO2001027980A1/en not_active Ceased
- 2000-10-11 HK HK02107245.6A patent/HK1045760A1/zh unknown
- 2000-10-11 MX MXPA02003749A patent/MXPA02003749A/es active IP Right Grant
- 2000-10-11 AT AT00970767T patent/ATE458268T1/de not_active IP Right Cessation
- 2000-10-13 MY MYPI20004807A patent/MY125503A/en unknown
- 2000-10-13 MY MYPI20052805A patent/MY142266A/en unknown
- 2000-10-13 MY MYPI20052804A patent/MY142275A/en unknown
- 2000-10-13 TW TW089121473A patent/TW488082B/zh not_active IP Right Cessation
- 2000-10-13 MY MYPI20052807A patent/MY142276A/en unknown
- 2000-10-13 MY MYPI20052806A patent/MY145233A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP4947867B2 (ja) | 2012-06-06 |
| MY142266A (en) | 2010-11-15 |
| MXPA02003749A (es) | 2002-08-30 |
| MY125503A (en) | 2006-08-30 |
| AU8009500A (en) | 2001-04-23 |
| HK1045760A1 (zh) | 2002-12-06 |
| EP1222685B1 (de) | 2010-02-17 |
| DE60043854D1 (de) | 2010-04-01 |
| KR20020047225A (ko) | 2002-06-21 |
| KR100751959B1 (ko) | 2007-09-03 |
| WO2001027980A1 (en) | 2001-04-19 |
| CN1378702A (zh) | 2002-11-06 |
| MY142276A (en) | 2010-11-15 |
| CA2386329A1 (en) | 2001-04-19 |
| MY142275A (en) | 2010-11-15 |
| MY145233A (en) | 2012-01-13 |
| CN1183577C (zh) | 2005-01-05 |
| TW488082B (en) | 2002-05-21 |
| JP2003511871A (ja) | 2003-03-25 |
| WO2001027980A9 (en) | 2002-09-26 |
| EP1222685A1 (de) | 2002-07-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |