ATE488622T1 - Verringerung von karottendefekten bei der siliciumcarbid-epitaxie - Google Patents

Verringerung von karottendefekten bei der siliciumcarbid-epitaxie

Info

Publication number
ATE488622T1
ATE488622T1 AT04811590T AT04811590T ATE488622T1 AT E488622 T1 ATE488622 T1 AT E488622T1 AT 04811590 T AT04811590 T AT 04811590T AT 04811590 T AT04811590 T AT 04811590T AT E488622 T1 ATE488622 T1 AT E488622T1
Authority
AT
Austria
Prior art keywords
layer
silicon carbide
epitaxial
substrate
growth
Prior art date
Application number
AT04811590T
Other languages
English (en)
Inventor
Michael John O'loughlin
Joseph John Sumakeris
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE488622T1 publication Critical patent/ATE488622T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B23/00—Re-forming shaped glass
    • C03B23/02—Re-forming glass sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
AT04811590T 2004-03-01 2004-11-18 Verringerung von karottendefekten bei der siliciumcarbid-epitaxie ATE488622T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/790,406 US7230274B2 (en) 2004-03-01 2004-03-01 Reduction of carrot defects in silicon carbide epitaxy
PCT/US2004/038895 WO2005093137A1 (en) 2004-03-01 2004-11-18 Reduction of carrot defects in silicon carbide epitaxy

Publications (1)

Publication Number Publication Date
ATE488622T1 true ATE488622T1 (de) 2010-12-15

Family

ID=34959915

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04811590T ATE488622T1 (de) 2004-03-01 2004-11-18 Verringerung von karottendefekten bei der siliciumcarbid-epitaxie

Country Status (10)

Country Link
US (2) US7230274B2 (de)
EP (1) EP1721031B1 (de)
JP (1) JP5268354B2 (de)
KR (1) KR20070008577A (de)
CN (1) CN100472002C (de)
AT (1) ATE488622T1 (de)
CA (1) CA2555431A1 (de)
DE (1) DE602004030161D1 (de)
TW (1) TW200534360A (de)
WO (1) WO2005093137A1 (de)

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CN104851781B (zh) * 2015-06-08 2020-04-14 国网智能电网研究院 一种n型低偏角碳化硅外延片的制备方法
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CN108138360B (zh) * 2015-10-07 2020-12-08 住友电气工业株式会社 碳化硅外延基板及用于制造碳化硅半导体装置的方法
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CN113745094A (zh) * 2021-08-31 2021-12-03 顾赢速科技(合肥)有限公司 多层外延工艺制作薄碳化硅晶片圆的方法
CN113654866B (zh) * 2021-09-22 2024-03-01 河北光兴半导体技术有限公司 一种含有微米级一维铂铑缺陷的薄玻璃样品的制备及缺陷测试方法
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Also Published As

Publication number Publication date
TW200534360A (en) 2005-10-16
JP5268354B2 (ja) 2013-08-21
US20070108450A1 (en) 2007-05-17
DE602004030161D1 (de) 2010-12-30
CN1926266A (zh) 2007-03-07
EP1721031B1 (de) 2010-11-17
US7230274B2 (en) 2007-06-12
EP1721031A1 (de) 2006-11-15
US9903046B2 (en) 2018-02-27
CN100472002C (zh) 2009-03-25
WO2005093137A1 (en) 2005-10-06
CA2555431A1 (en) 2005-10-06
US20080054412A1 (en) 2008-03-06
JP2007525402A (ja) 2007-09-06
KR20070008577A (ko) 2007-01-17

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