ATE459961T1 - Speichersteuerung mit selektiver retention - Google Patents

Speichersteuerung mit selektiver retention

Info

Publication number
ATE459961T1
ATE459961T1 AT05783548T AT05783548T ATE459961T1 AT E459961 T1 ATE459961 T1 AT E459961T1 AT 05783548 T AT05783548 T AT 05783548T AT 05783548 T AT05783548 T AT 05783548T AT E459961 T1 ATE459961 T1 AT E459961T1
Authority
AT
Austria
Prior art keywords
memory circuit
data retention
memory cells
state
memory
Prior art date
Application number
AT05783548T
Other languages
English (en)
Inventor
Berkel Cornelis Van
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE459961T1 publication Critical patent/ATE459961T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Power Sources (AREA)
  • Food Preservation Except Freezing, Refrigeration, And Drying (AREA)
AT05783548T 2004-09-22 2005-09-19 Speichersteuerung mit selektiver retention ATE459961T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04104588 2004-09-22
PCT/IB2005/053062 WO2006033070A1 (en) 2004-09-22 2005-09-19 Memory control with selective retention

Publications (1)

Publication Number Publication Date
ATE459961T1 true ATE459961T1 (de) 2010-03-15

Family

ID=35431547

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05783548T ATE459961T1 (de) 2004-09-22 2005-09-19 Speichersteuerung mit selektiver retention

Country Status (8)

Country Link
US (2) US7804732B2 (de)
EP (1) EP1794756B1 (de)
JP (1) JP4774526B2 (de)
KR (1) KR101158154B1 (de)
CN (1) CN100568377C (de)
AT (1) ATE459961T1 (de)
DE (1) DE602005019758D1 (de)
WO (1) WO2006033070A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7226857B2 (en) 2004-07-30 2007-06-05 Micron Technology, Inc. Front-end processing of nickel plated bond pads
EP1794756B1 (de) * 2004-09-22 2010-03-03 Nxp B.V. Speichersteuerung mit selektiver retention
US7675806B2 (en) * 2006-05-17 2010-03-09 Freescale Semiconductor, Inc. Low voltage memory device and method thereof
ITVA20060081A1 (it) * 2006-12-22 2008-06-23 St Microelectronics Srl Riduzione del consumo da parte di un sistema elettronico integrato comprendente distinte risorse statiche ad accesso casuale di memorizzazione dati
US20080285367A1 (en) * 2007-05-18 2008-11-20 Chang Ho Jung Method and apparatus for reducing leakage current in memory arrays
KR101488166B1 (ko) 2008-03-26 2015-02-02 삼성전자주식회사 정적 메모리 장치 및 라이트 어시시트 기능을 구비하는에스램
US8230239B2 (en) * 2009-04-02 2012-07-24 Qualcomm Incorporated Multiple power mode system and method for memory
DE102009020731A1 (de) * 2009-05-11 2010-11-25 Continental Automotive Gmbh Verfahren und Steuereinheit zum Betreiben eines flüchtigen Speichers, Schaltungsanordnung und Fahrtenschreiber
JP2011123970A (ja) * 2009-12-14 2011-06-23 Renesas Electronics Corp 半導体記憶装置
EP2580657B1 (de) 2010-06-11 2018-10-31 NXP USA, Inc. Informationsverarbeitungsvorrichtung und -verfahren
US9116701B2 (en) * 2010-06-11 2015-08-25 Freescale Semiconductor, Inc. Memory unit, information processing device, and method
US8804449B2 (en) 2012-09-06 2014-08-12 Micron Technology, Inc. Apparatus and methods to provide power management for memory devices
JP6030987B2 (ja) * 2013-04-02 2016-11-24 ルネサスエレクトロニクス株式会社 メモリ制御回路
US10586795B1 (en) * 2018-04-30 2020-03-10 Micron Technology, Inc. Semiconductor devices, and related memory devices and electronic systems
US11152046B1 (en) 2020-07-17 2021-10-19 Apple Inc. Sram bit cell retention
CN112711548B (zh) * 2021-01-11 2023-05-16 星宸科技股份有限公司 内存装置、图像处理芯片以及内存控制方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04133117A (ja) * 1990-09-26 1992-05-07 Canon Inc 情報処理装置
US5615162A (en) * 1995-01-04 1997-03-25 Texas Instruments Incorporated Selective power to memory
JPH09212416A (ja) * 1995-11-30 1997-08-15 Toshiba Corp 計算機システムおよび計算機システムの電力管理方法
US5928365A (en) * 1995-11-30 1999-07-27 Kabushiki Kaisha Toshiba Computer system using software controlled power management method with respect to the main memory according to a program's main memory utilization states
JP2951302B2 (ja) * 1997-01-31 1999-09-20 松下電器産業株式会社 半導体装置および半導体装置を制御する方法
JP2003132683A (ja) * 2001-10-23 2003-05-09 Hitachi Ltd 半導体装置
US6512705B1 (en) * 2001-11-21 2003-01-28 Micron Technology, Inc. Method and apparatus for standby power reduction in semiconductor devices
US6839299B1 (en) * 2003-07-24 2005-01-04 International Business Machines Corporation Method and structure for reducing gate leakage and threshold voltage fluctuation in memory cells
US7061820B2 (en) * 2003-08-27 2006-06-13 Texas Instruments Incorporated Voltage keeping scheme for low-leakage memory devices
US6925025B2 (en) * 2003-11-05 2005-08-02 Texas Instruments Incorporated SRAM device and a method of powering-down the same
US7227804B1 (en) * 2004-04-19 2007-06-05 Cypress Semiconductor Corporation Current source architecture for memory device standby current reduction
EP1794756B1 (de) * 2004-09-22 2010-03-03 Nxp B.V. Speichersteuerung mit selektiver retention
JP2006146998A (ja) * 2004-11-17 2006-06-08 Kawasaki Microelectronics Kk メモリ

Also Published As

Publication number Publication date
US20080259699A1 (en) 2008-10-23
US20110051501A1 (en) 2011-03-03
US7804732B2 (en) 2010-09-28
JP4774526B2 (ja) 2011-09-14
DE602005019758D1 (de) 2010-04-15
US8305828B2 (en) 2012-11-06
KR20070058514A (ko) 2007-06-08
WO2006033070A1 (en) 2006-03-30
EP1794756A1 (de) 2007-06-13
JP2008513923A (ja) 2008-05-01
EP1794756B1 (de) 2010-03-03
CN100568377C (zh) 2009-12-09
KR101158154B1 (ko) 2012-06-19
CN101061547A (zh) 2007-10-24

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Legal Events

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