ATE459981T1 - Halbleiterbauelement und dessen herstellungsverfahren - Google Patents

Halbleiterbauelement und dessen herstellungsverfahren

Info

Publication number
ATE459981T1
ATE459981T1 AT01927755T AT01927755T ATE459981T1 AT E459981 T1 ATE459981 T1 AT E459981T1 AT 01927755 T AT01927755 T AT 01927755T AT 01927755 T AT01927755 T AT 01927755T AT E459981 T1 ATE459981 T1 AT E459981T1
Authority
AT
Austria
Prior art keywords
region
collector
semiconductor
transistor
bipolar
Prior art date
Application number
AT01927755T
Other languages
English (en)
Inventor
Ronald Dekker
Henricus Maas
Jan Slotboom
Rijs Freerk Van
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE459981T1 publication Critical patent/ATE459981T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/837—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT01927755T 2000-03-30 2001-03-20 Halbleiterbauelement und dessen herstellungsverfahren ATE459981T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00201141 2000-03-30
PCT/EP2001/003132 WO2001075974A1 (en) 2000-03-30 2001-03-20 Semiconductor device and method of manufacturing same

Publications (1)

Publication Number Publication Date
ATE459981T1 true ATE459981T1 (de) 2010-03-15

Family

ID=8171271

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01927755T ATE459981T1 (de) 2000-03-30 2001-03-20 Halbleiterbauelement und dessen herstellungsverfahren

Country Status (6)

Country Link
US (1) US6593628B2 (de)
EP (1) EP1273042B1 (de)
JP (1) JP2003529937A (de)
AT (1) ATE459981T1 (de)
DE (1) DE60141459D1 (de)
WO (1) WO2001075974A1 (de)

Families Citing this family (13)

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JP4362682B2 (ja) * 2002-09-02 2009-11-11 富士ゼロックス株式会社 面発光型半導体レーザおよびその製造方法ならびにその製造装置
DE10250204B8 (de) * 2002-10-28 2008-09-11 Infineon Technologies Ag Verfahren zur Herstellung von Kollektorbereichen einer Transistorstruktur
EP1443554A1 (de) * 2003-01-27 2004-08-04 STMicroelectronics S.r.l. Gehäuse für Halbleitervorrichtungen
DE102004038699A1 (de) * 2004-08-10 2006-02-23 Atmel Germany Gmbh Kaskode, Kaskodenschaltung und Verfahren zur vertikalen Integration von zwei Bipolartransistoren zu einer Kaskodenanordnung
DE102004055213B4 (de) * 2004-11-16 2009-04-09 Atmel Germany Gmbh Verfahren zur Herstellung einer integrierten Schaltung auf einem Halbleiterplättchen
DE102004055183B3 (de) * 2004-11-16 2006-07-13 Atmel Germany Gmbh Integrierte Schaltung und Verfahren zur Herstellung einer integrierten Schaltung auf einem Halbleiterplättchen
KR100574498B1 (ko) * 2004-12-28 2006-04-27 주식회사 하이닉스반도체 반도체 장치의 초기화 회로
US8212291B2 (en) * 2008-03-12 2012-07-03 Georgia Tech Research Corporation Inverse mode SiGe HBT cascode device and fabrication method
US8710665B2 (en) * 2008-10-06 2014-04-29 Infineon Technologies Ag Electronic component, a semiconductor wafer and a method for producing an electronic component
DE102009032486A1 (de) * 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010027679A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US8890247B2 (en) * 2012-10-15 2014-11-18 International Business Machines Corporation Extremely thin semiconductor-on-insulator with back gate contact
JP5907480B2 (ja) 2013-07-31 2016-04-26 株式会社村田製作所 バイポーラトランジスタ及び半導体装置並びにバイポーラトランジスタの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3566218A (en) * 1968-10-02 1971-02-23 Nat Semiconductor Corp The Multiple base width integrated circuit
JPS6020559A (ja) * 1983-07-15 1985-02-01 Hitachi Ltd 複合半導体装置
JPS63313860A (ja) * 1987-06-17 1988-12-21 Seiko Epson Corp 半導体装置
JPH0263155A (ja) * 1988-08-29 1990-03-02 Mitsubishi Electric Corp 半導体集積回路装置
JPH0817179B2 (ja) * 1989-03-14 1996-02-21 株式会社東芝 半導体装置およびその製造方法
DE69315813T2 (de) 1992-12-28 1998-06-10 Koninkl Philips Electronics Nv Kaskodenschaltungsstruktur mit bipolaren Epitoxial-Transistoren und niedrig gelegenem Basisanschluss
BE1007589A3 (nl) * 1993-10-01 1995-08-16 Philips Electronics Nv Halfgeleiderinrichting met in mesa-structuur aangebracht halfgeleiderelement.
KR100380701B1 (ko) * 1994-07-26 2003-07-22 코닌클리케 필립스 일렉트로닉스 엔.브이. 표면장착용반도체장치제조방법및표면장착용반도체장치
WO1997017726A1 (en) * 1995-11-07 1997-05-15 National Semiconductor Corporation Low collector resistance bipolar transistor compatible with high voltage integrated circuits
JP3709668B2 (ja) * 1997-09-02 2005-10-26 ソニー株式会社 半導体装置とその製造方法
JP3164076B2 (ja) * 1998-08-28 2001-05-08 日本電気株式会社 半導体装置の製造方法
US6221706B1 (en) * 1999-03-17 2001-04-24 Advanced Micro Devices, Inc. Aluminum disposable spacer to reduce mask count in CMOS transistor formation
US6171911B1 (en) * 1999-09-13 2001-01-09 Taiwan Semiconductor Manufacturing Company Method for forming dual gate oxides on integrated circuits with advanced logic devices

Also Published As

Publication number Publication date
US6593628B2 (en) 2003-07-15
EP1273042A1 (de) 2003-01-08
DE60141459D1 (de) 2010-04-15
WO2001075974A1 (en) 2001-10-11
US20010045619A1 (en) 2001-11-29
JP2003529937A (ja) 2003-10-07
EP1273042B1 (de) 2010-03-03

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